Class 438/253 - Stacked capacitor

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Process for making an insulated gate field effect transistor
No. of patents: 2936
Last issue date: 05/29/2012

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Number	Title	Issue Date
8187934	Reverse construction memory cell A method of fabricating a memory cell comprises forming a plurality of doped semiconductor layers on a carrier substrate. The method further comprises forming a plurality of digit lines separated by an insulating material. The digit lines are arrayed over the doped ...	05/29/2012
8183109	Semiconductor device and method of manufacturing the same Disclosed is a method of manufacturing a semiconductor device, which comprises the steps of: forming a hydrogen diffusion preventing insulating film covering capacitors; forming a capacitor protecting insulating film on the hydrogen diffusion preventing insulating f...	05/22/2012
8163613	Methods of forming a plurality of capacitors A method of forming a plurality of capacitors includes forming a plurality of individual capacitor electrodes using two masking steps. An earlier of the two masking steps is used to form an array of first openings over a plurality of storage node contacts. A later o...	04/24/2012
8158477	Method for forming a pixel of an electroluminescence device having storage capacitors A method for forming a pixel of an electroluminescence device includes providing a substrate; defining at least a first area for capacitors and a second area for a transistor on the substrate; forming a first conductive layer over the first area; forming a first die...	04/17/2012
8148223	1T MIM memory for embedded ram application in soc Embedded memories. The devices include a substrate, a first dielectric layer, a second dielectric layer, a third dielectric layer, and a plurality of capacitors. The substrate comprises transistors. The first dielectric layer, embedding first and second conductive p...	04/03/2012
8138042	Capacitor, method of increasing a capacitance area of same, and system containing same A capacitor includes a substrate (110, 210), a first electrically insulating layer (120, 220) over the substrate, and a fin (130, 231) including a semiconducting material (135) over the first electrically insulating layer. A first electri...	03/20/2012
8129240	Methods of forming a plurality of capacitors A method of forming a plurality of capacitors includes an insulative material received over a capacitor array area and a circuitry area. The array area comprises a plurality of capacitor electrode openings within the insulative material received over individual capa...	03/06/2012
8124476	Semiconductor device and method of manufacturing the same Provided is a semiconductor device, including a silicon substrate, a first insulating film formed on the silicon substrate, a first conductive plug formed in an inside of a first contact hole of the first insulating film, an underlying conductive film having a flat ...	02/28/2012
8084323	Stack capacitor of memory device and fabrication method thereof The invention provides a method for forming a stack capacitor of a memory device, including providing a substrate, forming a patterned sacrificial layer with a plurality of first openings over the substrate, conformally forming a first conductive layer on the patter...	12/27/2011
8071441	Methods of forming DRAM arrays Some embodiments include methods of forming transistor gates. A gate stack is placed within a reaction chamber and subjected to at least two etches, and to one or more depositions to form a transistor gate. The transistor gate may comprise at least one electrically ...	12/06/2011
8058126	Semiconductor devices and structures including at least partially formed container capacitors and methods of forming the same Methods of forming semiconductor devices that include one or more container capacitors include anchoring an end of a conductive member to a surrounding lattice material using an anchor material, which may be a dielectric. The anchor material may extend over at least...	11/15/2011
8053310	Method for defect reduction for memory cell capacitors A method for forming a cylindrical stack capacitor structure. A semiconductor substrate is provided. Storage node structures are formed in a memory cell region. A dielectric layer is formed overlying the storage node structures. A patterning and a first etching proc...	11/08/2011
8053311	Dielectric film and semiconductor device using dielectric film including hafnium, aluminum or silicon, nitrogen, and oxygen The present invention provides a dielectric film having a high permittivity and a high heat resistance. An embodiment of the present invention is a dielectric film (103) including a composite oxynitride containing an element A made of Hf, an element B made of...	11/08/2011
8048737	Semiconductor device and method of fabricating the same The invention relates to a semiconductor device and a method of fabricating the same, wherein a storage node contact hole is made large to solve any problem caused during etching a storage node contact hole with a small CD, a landing plug is formed to lower plug res...	11/01/2011
8048736	Semiconductor device comprising a capacitor in the metallization system and a method of forming the capacitor By forming metal capacitors in the metallization structures of semiconductor devices, complex manufacturing sequences in the device level may be avoided. The process of manufacturing the metal capacitors may be performed on the basis of well-established patterning r...	11/01/2011
8034683	Method of forming a phase change material layer, method of forming a phase change memory device using the same, and a phase change memory device so formed A method of forming a phase change material layer includes preparing a substrate having an insulator and a conductor, loading the substrate into a process housing, injecting a deposition gas into the process housing to selectively form a phase change material layer ...	10/11/2011
7985645	Semiconductor device having a high aspect cylindrical capacitor and method for fabricating the same A semiconductor device having a high aspect cylindrical capacitor and a method for fabricating the same is presented. The high aspect cylindrical type capacitor is a stable structure which is not prone to causing bunker defects and losses in a guard ring. The semico...	07/26/2011
7977184	Method for fabricating MIM structure capacitor A method for fabricating a metal/insulator/metal (MIM) structure capacitor includes forming a nitride film that is an insulating layer on a bottom electrode metal layer; forming titanium/titanium nitride (Ti/TiN) that is a top electrode metal layer on the nitride fi...	07/12/2011
7968403	Method of fabricating a sleeve insulator for a contact structure A method and structure are disclosed that are advantageous for aligning a contact plug within a bit line contact corridor (BLCC) to an active area of a DRAM that utilizes an insulated sleeve structure. A sleeve insulator layer is deposited in an opening to protect o...	06/28/2011
7960227	Manufacturing method of semiconductor device After a first via hole leading to a ferroelectric capacitor structure are formed in an interlayer insulating film by dry etching, a second via hole to expose part of the ferroelectric capacitor structure is formed in a hydrogen diffusion preventing film so as to be ...	06/14/2011
7951667	Method for fabricating semiconductor device A method of fabricating a vertical transistor in a semiconductor device improves integration of the semiconductor device according to a design rule. After a semiconductor substrate is etched to form a buried bit line, a gate electrode pattern that surrounds a cylind...	05/31/2011
7951668	Process for fabricating crown capacitors of dram and capacitor structure A process for fabricating crown capacitors is described. A substrate having a template layer thereon is provided. A patterned support layer is formed over the template layer. A sacrifice layer is formed over the substrate covering the patterned support layer. Holes ...	05/31/2011
7947554	Method of fabricating semiconductor device having semiconductor elements According to an aspect of the invention, there is provided a semiconductor device including a first semiconductor element formed on a semiconductor substrate and using electrons as carriers, and a second semiconductor element formed on the semiconductor substrate an...	05/24/2011
7939404	Manufacturing method of capacitor in semiconductor A manufacturing method of a capacitor of a semiconductor device includes a first step of forming a graphene seed film over a substrate; a second step of increasing surface energy of the graphene seed film and performing a first plasma process to the graphene seed fi...	05/10/2011
7927947	Methods for depositing high-K dielectrics Methods for depositing high-K dielectrics are described, including depositing a first electrode on a substrate, wherein the first electrode is chosen from the group consisting of platinum and ruthenium, applying an oxygen plasma treatment to the exposed metal to red...	04/19/2011
7915117	Method for forming a pixel of an electroluminescence device having storage capacitors An electroluminescence (EL) device includes a substrate and a plurality of pixels formed on the substrate. Each pixel includes a first area including at least a first capacitor and a second capacitor, the first capacitor including a first conductive layer, a first d...	03/29/2011
7897454	Metal-insulator-metal capacitor and fabrication method thereof The present invention provides a metal-insulator-metal capacitor, which comprises a semiconductor substrate; an interlayer dielectric layer disposed on the semiconductor substrate; and an insulation trench and two metal trenches all running through the interlayer di...	03/01/2011
7892918	Method of fabricating a semiconductor device including formation of contact holes A wiring structure in a semiconductor device includes a first insulation layer formed on a substrate having first and second contact regions, and first and second pads extending through the first insulation layer and contacting the first and the second contact regio...	02/22/2011
7888202	Method and apparatus for reducing parasitic capacitance A method and apparatus for reducing parasitic capacitance. A P-well blocked layer is formed directly beneath a parasitic device. The P-well blocked layer significantly increases the resistance underneath the parasitic device. The resistance of the P-well blocked lay...	02/15/2011
7867842	Method and apparatus for forming planar alloy deposits on a substrate A method for forming alloy deposits at selected areas on a receiving substrate includes the steps of: providing an alloy carrier including at least a first decal including a first plurality of openings and a second decal including a second plurality of openings, the...	01/11/2011
7851303	Semiconductor device and manufacturing method thereof A semiconductor device includes: a transistor having source and drain regions; first and second contact electrodes embedded in a first interlayer insulating film, and electrically connected to the source region and the drain region, respectively; a third electrode e...	12/14/2010
7851302	Capacitors and methods of manufacture thereof Capacitors are formed in metallization layers of semiconductor device in regions where functional conductive features are not formed, more efficiently using real estate of integrated circuits. The capacitors may be stacked and connected in parallel to provide increa...	12/14/2010
7820508	Semiconductor device having capacitor and method of fabricating the same A semiconductor device having a capacitor and a method of fabricating the same may be provided. A method of fabricating a semiconductor device may include forming an etch stop layer and a mold layer sequentially on a substrate, patterning the mold layer to form a mo...	10/26/2010
7820507	Semiconductor device and method for fabricating the same A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes: an inter-layer dielectric (ILD) layer formed on a semiconductor substrate; a contact plug formed in the ILD layer, such that a predetermined portion of the ...	10/26/2010
7811882	Hardmask manufacture in ferroelectric capacitors A method of manufacturing a semiconductor device. The method comprises fabricating a ferroelectric capacitor. The capacitor's fabrication includes forming conductive and ferroelectric material layers on a semiconductor substrate, forming a hardmask layer on the cond...	10/12/2010
7799633	Semiconductor device and method of manufacturing the same Provided are a semiconductor device and a method of manufacturing the semiconductor device, for example, a semiconductor device using carbon nanotubes or nanowires as lower electrodes of a capacitor, and a method of manufacturing the semiconductor device. The semico...	09/21/2010
7785962	Methods of forming a plurality of capacitors A method of forming a plurality of capacitors includes an insulative material received over a capacitor array area and a circuitry area. The array area comprises a plurality of capacitor electrode openings within the insulative material received over individual capa...	08/31/2010
7776684	Increasing the surface area of a memory cell capacitor Methods and apparatuses to increase a surface area of a memory cell capacitor are described. An opening in a second insulating layer deposited over a first insulating layer on a substrate is formed. The substrate has a fin. A first insulating layer is deposited over...	08/17/2010
7776685	Copolymers, polymer resin composition for buffer layer method of forming a pattern using the same and method of manufacturing a capacitor using the same The invention is directed to particular polymer compositions that may be generally characterized by the formula: wherein the variables L, M and N represent the relative molar fractions of the monomers and satisfy the expres...	08/17/2010
7767521	Cell region layout of semiconductor device and method of forming contact pad using the same A cell region layout of a semiconductor device formed by adding active regions in the outermost portion of a cell region, and a method of forming a contact pad using the same are provided. The layout and the method include a first active region formed at the outermo...	08/03/2010

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Class 438/253 - Stacked capacitor