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| Number | Title | Issue Date |
| 8187933 | Methods of forming dielectric material-containing structures Some embodiments include dielectric structures. The structures include first and second portions that are directly against one another. The first portion may contain a homogeneous mixture of a first phase and a second phase. The first phase may have a dielectric con... | 05/29/2012 |
| 8183108 | Glass flux assisted sintering of chemical solution deposited thin dielectric films A method of making dense dielectrics layers via chemical solution deposition by adding inorganic glass fluxed material to high dielectric constant compositions, depositing the resultant mixture onto a substrate and annealing the substrate at temperatures between the... | 05/22/2012 |
| 8178404 | Metal-insulator-metal (MIM) capacitor structure and methods of fabricating same A Metal-Insulator-Metal (MIM) capacitor structure and method of fabricating the same in an integrated circuit improve capacitance density in a MIM capacitor structure by utilizing a sidewall spacer extending along a channel defined between a pair of legs that define... | 05/15/2012 |
| 8105896 | Methods of forming capacitors A method of forming a capacitor includes forming a conductive first capacitor electrode material comprising TiN over a substrate. TiN of the TiN-comprising material is oxidized effective to form conductive TiOxNy having resistivity no greater t... | 01/31/2012 |
| 8088659 | Method of forming capacitors High dielectric films of mixed transition metal oxides of titanium and tungsten, or titanium and tantalum, are formed by sequential chemical vapor deposition (CVD) of the respective nitrides and annealing in the presence of oxygen to densify and oxidize the nitrides... | 01/03/2012 |
| 8062943 | Capacitor with zirconium oxide and method for fabricating the same A capacitor with zirconium oxide and a method for fabricating the same are provided. The method includes: forming a storage node; forming a multi-layered dielectric structure on the storage node, the multi-layered dielectric structure including a zirconium oxide (Zr... | 11/22/2011 |
| 8048735 | Manufacturing method of semiconductor device The present invention provides an MIM capacitor using a high-k dielectric film preventing degradation of breakdown field strength of the MIM capacitor and suppressing the increase of the leakage current. The MIM capacitor comprises a first metal interconnect, a fabr... | 11/01/2011 |
| 8012824 | Process to make high-K transistor dielectrics A method of reducing impurities in a high-k dielectric layer comprising the following steps. A substrate is provided. A high-k dielectric layer having impurities is formed over the substrate. The high-k dielectric layer being formed by an MOCVD or an ALCVD process. ... | 09/06/2011 |
| 8003462 | Manufacture method for semiconductor device having MIM capacitor, and semiconductor device A first electrode film containing TiAlN and a main dielectric film containing tantalum oxide are formed over a semiconductor substrate. Anneal is performed in the state that the first electrode film and the main dielectric film are formed, to react aluminum (Al) in ... | 08/23/2011 |
| 7981741 | High-capacitance density thin film dielectrics having columnar grains formed on base-metal foils Deposited thin-film dielectrics having columnar grains and high dielectric constants are formed on heat treated and polished metal foil. The sputtered dielectrics are annealed at low oxygen partial pressures. ... | 07/19/2011 |
| 7955926 | Structure and method to control oxidation in high-k gate structures In one embodiment, the present invention provides a method of fabricating a semiconducting device that includes providing a substrate including at least one semiconducting region and at least one oxygen source region; forming an oxygen barrier material atop portions... | 06/07/2011 |
| 7910428 | Capacitor with pillar type storage node and method for fabricating the same including conductive capping layer A capacitor includes a pillar-type storage node, a supporter filling an inner empty crevice of the storage node, a dielectric layer over the storage node, and a plate node over the dielectric layer. ... | 03/22/2011 |
| 7892917 | Method for forming bismuth titanium silicon oxide thin film A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-tit... | 02/22/2011 |
| 7883961 | Manufacturing method for ferroelectric memory device A manufacturing method for a ferroelectric memory device including: forming a lower electrode; forming an electrode oxide film composed of an oxide of a constituent material of the lower electrode; forming a first ferroelectric layer on the lower electrode by reacti... | 02/08/2011 |
| 7820506 | Capacitors, dielectric structures, and methods of forming dielectric structures Some embodiments include dielectric structures. The structures include first and second portions that are directly against one another. The first portion may contain a homogeneous mixture of a first phase and a second phase. The first phase may have a dielectric con... | 10/26/2010 |
| 7799631 | Multiple-layer dielectric layer and method for fabricating capacitor including the same A dielectric layer of a capacitor includes a first dielectric layer, a second dielectric layer formed over the first dielectric layer, the second dielectric layer having a dielectric constant lower than that of the first dielectric layer, and a third dielectric laye... | 09/21/2010 |
| 7785958 | Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode A method for making a semiconductor device is described. That method comprises forming a first dielectric layer on a substrate, a trench within the first dielectric layer, and a second dielectric layer on the substrate. The second dielectric layer has a first part t... | 08/31/2010 |
| 7754563 | Nanolaminate-structure dielectric film forming method Nanolaminate-structure SrO/TiO films are formed on a lower electrode of a capacitor by molecular layer deposition kept in a rate-determined state by a surface reaction. The nanolaminate-structure SrO/TiO films are formed by alternately laminating one or more and 20 ... | 07/13/2010 |
| 7741173 | Method for forming a metal oxide film A method for forming a capacitor insulation film includes the step of depositing a monoatomic film made of a metal by supplying a metal source including the metal and no oxygen, and depositing a metal oxide film including the metal by using a CVD technique. The meth... | 06/22/2010 |
| 7718487 | Method of manufacturing ferroelectric layer and method of manufacturing electronic instrument A method of manufacturing a ferroelectric layer, including: forming a first ferroelectric layer above a base by a vapor phase method; and forming a second ferroelectric layer above the first ferroelectric layer by a liquid phase method. ... | 05/18/2010 |
| 7713812 | Method for manufacturing semiconductor thin film A substrate with a second semiconductor layer and a second mask film formed thereon is subjected to a heat treatment in an oxidizing atmosphere. Thus, second oxidized regions are formed through oxidization of the second semiconductor layer in regions of the second s... | 05/11/2010 |
| 7648874 | Method of forming a dielectric structure having a high dielectric constant and method of manufacturing a semiconductor device having the dielectric structure In a method of manufacturing a dielectric structure, after a first dielectric layer is formed on a substrate by using a metal oxide doped with silicon, the substrate is placed on a susceptor of a chamber. By treating the first dielectric layer with a plasma in contr... | 01/19/2010 |
| 7635623 | Methods of forming capacitors A method of forming a capacitor includes forming a conductive first capacitor electrode material comprising TiN over a substrate. TiN of the TiN-comprising material is oxidized effective to form conductive TiOxNy having resistivity no greater t... | 12/22/2009 |
| 7625794 | Methods of forming zirconium aluminum oxide A dielectric layer having atomic layer deposited zirconium aluminum oxide and a method of fabricating such a dielectric layer may produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. The zirconium al... | 12/01/2009 |
| 7618859 | Thin film capacitor and fabrication method thereof A thin film capacitor comprising a top electrode, a bottom electrode, and a dielectric film held between the top and bottom electrodes. The dielectric film is composed of at least cations Ba, Sr, and Ti and anion O. The concentration of Sr, Ti, and O ions are unifor... | 11/17/2009 |
| 7615440 | Capacitor and method of manufacturing a capacitor In a method of fabricating a semiconductor device, a level of metal is formed within an interval dielectric. The level of metal includes a first metal line separated from a second metal line by a region of the interlevel dielectric. The region of interlevel dielectr... | 11/10/2009 |
| 7615441 | Forming high-k dielectric layers on smooth substrates A buffer layer and a high-k metal oxide dielectric may be formed over a smooth silicon substrate. The substrate smoothness may reduce column growth of the high-k metal oxide gate dielectric. The surface of the substrate may be saturated with hydroxyl terminations pr... | 11/10/2009 |
| 7608502 | Method for manufacturing semiconductor device In the process for manufacturing a semiconductor device of the present invention, a capacitor dielectric film is deposited via an atomic layer deposition employing an organic source material containing one or more metallic element(s) selected from the group consisti... | 10/27/2009 |
| 7592217 | Capacitor with zirconium oxide and method for fabricating the same A capacitor with zirconium oxide and a method for fabricating the same are provided. The method includes: forming a storage node; forming a multi-layered dielectric structure on the storage node, the multi-layered dielectric structure including a zirconium oxide (Zr... | 09/22/2009 |
| 7572695 | Hafnium titanium oxide films Embodiments of a dielectric layer containing a hafnium titanium oxide film structured as one or more monolayers include the dielectric layer disposed in an integrated circuit. Embodiments of methods of fabricating such a dielectric layer provide a dielectric layer f... | 08/11/2009 |
| 7550345 | Methods of forming hafnium-containing materials The invention includes methods of forming hafnium-containing materials, such as, for example, hafnium oxide. In one aspect, a semiconductor substrate is provided, and first reaction conditions are utilized to form hafnium-containing seed material in a desired crysta... | 06/23/2009 |
| 7550346 | Method for forming a gate dielectric of a semiconductor device Disclosed is a method for forming a gate dielectric in a semiconductor device. The present method includes forming a first dielectric layer on a semiconductor substrate; removing a portion of the first dielectric layer to expose a portion of the substrate; forming a... | 06/23/2009 |
| 7531408 | Method of manufacturing a semiconductor device containing a PbSr[Zr,Ti]RuOfilm in a capacitor A method of manufacturing a semiconductor device, including forming a capacitor above a semiconductor substrate, the capacitor including a dielectric film containing Pb, Zr, Ti and O. Forming the capacitor includes forming a crystallized film which contains Pb, Sr, ... | 05/12/2009 |
| 7528034 | Method for forming ferroelectric capacitor, ferroelectric capacitor and electronic device A method for forming a ferroelectric capacitor includes the steps of (a) forming a first conductive layer above a base substrate, (b) forming, on the first conductive layer, a ferroelectric layer containing a ferroelectric material having oxygen, (c) forming a secon... | 05/05/2009 |
| 7524723 | Semiconductor device and method for manufacturing same A semiconductor device is provided which has a capacitor insulating film made up of zirconium aliminate being an amorphous film obtained by having crystalline dielectric contain amorphous aluminum oxide and having its composition of AlXZr(1-X)O... | 04/28/2009 |
| 7517751 | Substrate treating method A substrate processing method includes the step of forming an oxide film by oxidizing a silicon substrate surface and the step of nitriding the oxide film to form an oxynitride film, wherein there is provided a step of purging oxygen after the oxidizing step but bef... | 04/14/2009 |
| 7514316 | Semiconductor device and method of manufacturing the same A p-well (12) is formed on a surface of an Si substrate (11) and element isolation insulating films (13) are formed. Next, a thin SiO2 film (14a) is formed on the whole surface, and an oxide film containing a rare earth ... | 04/07/2009 |
| 7507621 | Method of manufacturing semiconductor device Provided is a method of manufacturing a semiconductor device including the steps of: forming a first insulating film on a silicon substrate; forming a capacitor in which a lower electrode, a capacitor dielectric film configured of ferroelectric material, and an uppe... | 03/24/2009 |
| 7470584 | TEOS deposition method A TEOS deposition method. A mixture of gases is introduced into a process chamber, in which the mixture of gases comprises tetra-ethyl-ortho-silicate (TEOS) and N2. Compressive stress of a TEOS oxide film is increased by activating the mixture of gases. | 12/30/2008 |
| 7465627 | Methods of forming capacitors This invention includes methods of forming capacitors. In one implementation, a first capacitor electrode material is formed over a substrate. The first capacitor electrode material is exposed to a nitrogen comprising atmosphere effective to form a dielectric silico... | 12/16/2008 |
