Class 438/231 - Plural doping steps

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Process including multiple steps of introducing electrically
No. of patents: 763
Last issue date: 05/08/2012

Number	Title	Issue Date
4419809	Fabrication process of sub-micrometer channel length MOSFETs Methods for fabricating a semiconductor integrated circuit having a sub-micrometer gate length field effect transistor devices are described wherein a surface isolation pattern is formed in a semiconductor substrate which isolates regions of the semicondu...	12/13/1983
4382827	Silicon nitride S/D ion implant mask in CMOS device fabrication A coplanar CMOS process for fabricating self-aligned gate FETs utilizing high energy, high dose rate ion implants to form the S/D regions. In the course of coplanar processing, the gate electrodes and S/D regions are defined. Selectively prescribed thickn...	05/10/1983
4084311	Process for preparing complementary MOS integrated circuit A process for preparing a complementary MOS integrated circuit by forming a shallow first source-drain region near the gate; determining simultaneously the contact holes in the source-drain regions of both of the P-channel and N-channel transistors; formi...	04/18/1978

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