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| Number | Title | Issue Date |
| RE43426 | Fabrication method of transparent electrode on visible light-emitting diode A method for forming a transparent electrode on a visible light-emitting diode is described. A visible light-emitting diode element is provided, and the visible light-emitting diode element has a substrate, an epitaxial structure and a metal electrode. The metal ele... | 05/29/2012 |
| 8187899 | LED package structure for increasing light-emitting efficiency and controlling light-projecting angle and method for manufacturing the same An LED package structure for increasing light-emitting efficiency and controlling light-projecting angle includes a substrate unit, a light-emitting unit, a light-reflecting unit and a package unit. The substrate unit has a substrate body and a chip-placing area dis... | 05/29/2012 |
| 8183063 | Organic light emitting device and method of fabricating the same An organic light emitting device (OLED) and a method of fabricating the same are provided, wherein the OLED includes a thin film transistor having a gate electrode, and source and drain electrodes on a substrate; a triple-layered pixel electrode connected to one of ... | 05/22/2012 |
| 8183064 | Thin film transistor devices for OLED displays and method for fabricating the same A system for displaying images. The system includes a thin film transistor (TFT) device including a first gate layer disposed on a first region of a substrate and covered by a first insulating layer. A first polysilicon active layer is disposed on the first insulati... | 05/22/2012 |
| 8183065 | LED chip package structure with high-efficiency light emission by rough surfaces and method of making the same An LED chip package structure with high-efficiency light emission by rough surfaces includes a substrate unit, a light-emitting unit, and a package colloid unit. The substrate unit has a substrate body, and a positive electrode trace and a negative electrode trace r... | 05/22/2012 |
| 8183066 | Method and system for large scale manufacture of thin film photovoltaic devices using multi-chamber configuration A method for large scale manufacture of photovoltaic devices includes loading a substrate into a load lock station and transferring the substrate in a controlled ambient to a first process station. The method includes using a first physical deposition process in the... | 05/22/2012 |
| 8178369 | Nanoscale multi-junction quantum dot device and fabrication method thereof The present invention relates to a method of fabricating a nanoscale multi-junction quantum dot device wherein it can minimize constraints depending on the number or shape of patterns and a line width, and in particular, overcome shortcomings depending on the proxim... | 05/15/2012 |
| 8178370 | Method and system for large scale manufacture of thin film photovoltaic devices using multi-chamber configuration A method for large scale manufacture of photovoltaic devices includes loading a substrate into a load lock station and transferring the substrate in a controlled ambient to a first process station. The method includes using a first physical deposition process in the... | 05/15/2012 |
| 8168453 | Light emitting diode package and fabrication method thereof An LED package and a fabrication method therefor. The LED package includes first and second lead frames made of heat and electric conductors, each of the lead frames comprising a planar base and extensions extending in opposed directions and upward directions from t... | 05/01/2012 |
| 8168455 | Method for manufacturing light emitting diode A method for manufacturing light emitting diode (LED) is revealed. By means of wet etching, a plurality of pyramids is formed on epitaxial structure. The depth of the pyramids is beyond a n-type semiconductor layer, reaching a p-type semiconductor layer. Thus light ... | 05/01/2012 |
| 8168454 | Vertical light emitting diode and method of manufacturing the same Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga+N layer containing a larger amount of Ga than that... | 05/01/2012 |
| 8163577 | Methods of forming light emitting devices having current reducing structures A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semicon... | 04/24/2012 |
| 8163575 | Grown photonic crystals in semiconductor light emitting devices A photonic crystal is grown within a semiconductor structure, such as a III-nitride structure, which includes a light emitting region disposed between an n-type region and a p-type region. The photonic crystal may be multiple regions of semiconductor material separa... | 04/24/2012 |
| 8163576 | Nitride semiconductor device having a silicon-containing layer and manufacturing method thereof A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an electrode formed thereover. A nitride semiconductor device includes an n... | 04/24/2012 |
| 8153454 | Fabrication apparatus and fabrication method of semiconductor device produced by heating substrate A fabrication apparatus and fabrication method of a semiconductor device are provided, allowing the temperature distribution of a substrate to be rendered uniform. The fabrication apparatus for a semiconductor device includes a susceptor holding the substrate, a hea... | 04/10/2012 |
| 8153456 | Bifacial solar cell using ion implantation An improved bifacial solar cell is disclosed. In some embodiments, the front side includes an n-type field surface field, while the back side includes a p-type emitter. In other embodiments, the p-type emitter is on the front side. To maximize the diffusion of major... | 04/10/2012 |
| 8153455 | Method for enhancing light extraction efficiency of light emitting diodes A method for enhancing light extraction efficiency of a light emitting diode is disclosed. The method includes the steps of providing a light emitting diode including in sequence a substrate, a first layer of a first conduction type, an active layer, and a second la... | 04/10/2012 |
| 8148178 | Method of growing nitride single crystal and method of manufacturing nitride semiconductor light emitting device There is provided a method of growing a nitride single crystal. A method of growing a nitride single crystal according to an aspect of the invention may include: growing a first nitride single crystal layer on a substrate; forming a dielectric pattern having an open... | 04/03/2012 |
| 8148180 | Techniques of forming Ohmic contacts on GaN light emitting diodes A method of forming ohmic contacts on a light emitting diode that features a surface treatment of a substrate includes exposing a surface of a p-type gallium nitride layer to an acid-containing solution and a buffered oxide etch process. A quantum well is formed in ... | 04/03/2012 |
| 8148179 | Hermetically sealed glass package and method of fabrication A hermetically sealed glass package and method for manufacturing the hermetically sealed glass package are described herein using an OLED display as an example. In one embodiment, the hermetically sealed glass package is manufactured by providing a first substrate p... | 04/03/2012 |
| 8137998 | Method for fabricating light-emitting devices with vertical light-extraction mechanism A light-emitting device comprises a lattice structure to minimize the horizontal waveguide effect by reducing light traveling distance in the light-absorption medium of the light-emitting devices, and to enhance light extraction from the light-emitting layer. The la... | 03/20/2012 |
| 8137997 | Method and system for tone inverting of residual layer tolerant imprint lithography A system for imprint lithography, which includes a substrate, a patterned mask, an imprint applying unit that imprints, via the patterned mask, a pattern into a resist layer on the substrate, and an overlay device that overlays a cladding layer over the substrate. | 03/20/2012 |
| 8137996 | Method and system for tone inverting of residual layer tolerant imprint lithography A method (and apparatus) of imprint lithography, includes imprinting, via a patterned mask, a pattern into a resist layer on a substrate, and overlaying a cladding layer over the imprinted resist layer. A portion of the cladding layer is used as a hard mask for a su... | 03/20/2012 |
| 8110420 | Light emitting element array A method of fabricating a light emitting diode array, comprising: providing a temporary substrate; forming a first light emitting stack and a second light emitting stack on the temporary substrate; forming a first insulating layer covering partial of the first light... | 02/07/2012 |
| 8110419 | Process of manufacturing photovoltaic device An inline process for manufacturing a photovoltaic device on a removable substrate is disclosed. The process discloses two semiconductor layers forming an active region; at least one of the semiconductor layers is formed by a high-purity plasma spray process; option... | 02/07/2012 |
| 8110418 | Organic electroluminescent display device and method of fabricating the same An organic electroluminescent display device includes a substrate, gate and data lines on the substrate and crossing each other to define a pixel region, a switching element at each crossing point of the gate and data lines, a driving element coupled to the switchin... | 02/07/2012 |
| 8105852 | Method of forming a composite substrate and growing a III-V light emitting device over the composite substrate A method according to embodiments of the invention includes providing a substrate comprising a host and a seed layer bonded to the host. The seed layer comprises a plurality of regions. A semiconductor structure comprising a light emitting layer disposed between an ... | 01/31/2012 |
| 8101439 | Method of driving a light emitting device The present invention is characterized in that a transistor with its L/W set to 10 or larger is employed, and that |VDS| of the transistor is set equal to or larger than 1 V and equal to or less than |VGS−Vth|. The transistor is us... | 01/24/2012 |
| 8101440 | Method for fabricating light emitting diode chip A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a pas... | 01/24/2012 |
| 8093077 | Method for manufacturing a layer of gallium nitride or gallium and aluminum nitride The present invention relates to a method for manufacturing a crack free monocrystalline nitride layer having the composition AlxGa1-xN, where 0≦x≦0.3, on a substrate that is likely to generate tensile stress in the layer and to structures ... | 01/10/2012 |
| 8093076 | Organic light emitting apparatus and method of producing the same Provided are an organic light emitting apparatus for use in, for example, a flat device display, and a method of producing the apparatus. The organic light emitting apparatus has sides formed by division at ends of its substrate. Three-dimensional portions are forme... | 01/10/2012 |
| 8088635 | Vertical geometry light emitting diode package aggregate and production method of light emitting device using the same There are provided a vertical geometry light emitting diode package aggregate useful for the production of a light emitting device having a vertical geometry light emitting diode as the light source, the light emitting device satisfying requirements in terms of curr... | 01/03/2012 |
| 8084281 | Semiconductor substrate, electronic device, optical device, and production methods therefor The present invention provides a method for producing a semiconductor substrate, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements sel... | 12/27/2011 |
| 8076165 | Method of manufacturing p-type nitride semiconductor and semiconductor device fabricated by the method The present invention includes a first step of forming a nitride semiconductor layer by metal organic chemical vapor deposition by using a first carrier gas containing a nitrogen carrier gas and a hydrogen carrier gas of a flow quantity larger than that of the nitro... | 12/13/2011 |
| 8071400 | Buffer layer and manufacturing method thereof, reaction solution, photoelectric conversion device, and solar cell A buffer layer manufacturing method, including: a preparation step for preparing a reaction solution which includes a component (Z) of at least one kind of zinc source, a component (S) of at least one kind of sulfur source, a component (C) of at least one kind of ci... | 12/06/2011 |
| 8062913 | Semiconductor structure and method of manufacturing a semiconductor structure A semiconductor structure is formed of nitrides of group III metals having wurtzite crystal structure and grown in vapor phase on a (0001) oriented semiconductor substrate. The structure comprises a bottom cladding layer, a top cladding layer, and a diffusion region... | 11/22/2011 |
| 8062912 | Method of making a semiconductor chip assembly with a post/base heat spreader and horizontal signal routing A method of making a semiconductor chip assembly includes providing a post and a base, mounting an adhesive on the base including inserting the post through an opening in the adhesive, mounting a substrate on the adhesive including inserting the post into an apertur... | 11/22/2011 |
| 8058082 | Light-emitting diode with textured substrate A light-emitting diode (LED) device is provided. The LED device has raised semiconductor regions formed on a substrate. LED structures are formed over the raised semiconductor regions such that bottom contact layers and active layers of the LED device are conformal ... | 11/15/2011 |
| 8048693 | Methods and structures for relaxation of strained layers The present invention provides methods for relaxing a strained-material layer and structures produced by the methods. Briefly, the methods include depositing a first low-viscosity layer that includes a first compliant material on the strained-material layer, deposit... | 11/01/2011 |
| 8048692 | LED light emitter with heat sink holder and method for manufacturing the same An LED light emitter with heat sink holder and a method for manufacturing it are both disclosed. The LED light emitter with heat sink holder includes a heat sink holder and at least an LED chip. The heat sink holder is made of high thermal conductivity coefficient, ... | 11/01/2011 |
