Celebrity Inventors
Comic actor Danny Kaye received patent D166,807 for the co-design of "Blowout Toy or the Like". It's similar to one of those toys that unravels when you blow into at a birthday party except Kaye's has three blowouts going in different directions, not just one.
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| Number | Title | Issue Date |
| 8183106 | Apparatus and associated method for making a floating gate memory device with buried diffusion dielectric structures and increased gate coupling ratio A method for fabricating a floating gate memory device comprises using self-aligned process for formation of a fourth poly layer over a partial gate structure that does not require an additional photolithographic step. Accordingly, enhanced device reliability can be... | 05/22/2012 |
| 8163608 | Methods of fabricating nonvolatile memory devices Methods of fabricating a nonvolatile memory device include forming a trench mask pattern on a semiconductor substrate including a first region and a second region. Substrate trenches defining active regions are formed in the semiconductor substrate in the first regi... | 04/24/2012 |
| 8163609 | Nanocrystal memory with differential energy bands and method of formation A method of making a semiconductor device using a semiconductor substrate includes forming a first insulating layer having a first band energy over the semiconductor substrate. A first semiconductor layer having a second band energy is formed on the first insulating... | 04/24/2012 |
| 8119475 | Method of forming gate of semiconductor device A method of forming a gate of a semiconductor device comprising providing a semiconductor substrate over which a gate insulating layer, a first conductive layer, a dielectric layer, and a second conductive layer are sequentially formed, the semiconductor substrate d... | 02/21/2012 |
| 8110461 | Flash memory device and manufacturing method of the same Disclosed are a flash memory device and a method for manufacturing the same. The flash memory device includes first and second memory gates on a substrate; a floating poly between the first and second memory gates; first and second select gates at respective outer s... | 02/07/2012 |
| 8101477 | Method for making semiconductor device One or more embodiments relate to a method for forming a memory device, the memory device including a control gate, a charge storage structure and a select gate, the method comprising: forming a gate tower, the gate tower including the control gate over the charge s... | 01/24/2012 |
| 8076192 | Method of manufacturing a semiconductor device Provided is a manufacturing method of a semiconductor device, which comprises forming a film stack of a gate insulating film, a charge storage film, insulating film, polysilicon film, silicon oxide film, silicon nitride film and cap insulating film over a semiconduc... | 12/13/2011 |
| 8053302 | Non-volatile memory device and method of manufacturing same A non-volatile memory device and a method of manufacturing the non-volatile memory device are provided. At least one first semiconductor layer and at least one second semiconductor layer are disposed. At least one control gate electrode is disposed between the at le... | 11/08/2011 |
| 8043908 | Method of fabricating memory A method of fabricating a semiconductor device is provided. First, a stacked structure is formed on a substrate. The stacked structure includes, from the substrate, a dielectric layer and a conductive gate in order. An ion implant process is performed to form doped ... | 10/25/2011 |
| 8043907 | Atomic layer deposition processes for non-volatile memory devices Embodiments of the invention provide memory devices and methods for forming such memory devices. In one embodiment, a method for fabricating a non-volatile memory device on a substrate is provided which includes depositing a first polysilicon layer on a substrate su... | 10/25/2011 |
| 8039336 | Semiconductor device and method of fabrication thereof A method includes the steps of: introducing insulation film into a trench to provide a trench isolation; planarizing the trench isolation to expose a passivation film; and removing the passivation film and depositing a second silicon layer on a first silicon layer a... | 10/18/2011 |
| 8039337 | Nonvolatile memory device with multiple blocking layers and method of fabricating the same A nonvolatile memory device with a blocking layer controlling the transfer of electric charges in a charge storage layer includes the blocking layer having a first blocking layer in contact with the charge storage layer and a second blocking layer over the first blo... | 10/18/2011 |
| 8030150 | Method of fabricating non-volatile memory integrated circuit device and non-volatile memory integrated circuit device fabricated using the same A method of fabricating a non-volatile memory integrated circuit device and a non-volatile memory integrated circuit device fabricated by using the method are provided. A device isolation region is formed in a substrate to define a cell array region and a peripheral... | 10/04/2011 |
| 8017467 | Semiconductor memory device including multi-layer gate structure A semiconductor memory device includes a first select transistor, first stepped portion, and a first contact plug. The first select transistor is formed on a side of an upper surface of a substrate and has a first multi-layer gate. The first stepped portion is forme... | 09/13/2011 |
| 7968398 | Method for producing a floating gate with an alternation of lines of first and second materials A diblock copolymer layer comprising at least two polymers and having a lamellar structure perpendicularly to a substrate is deposited on a first gate insulator formed on the substrate. One of the polymers of the diblock copolymer layer is then eliminated to form pa... | 06/28/2011 |
| 7964459 | Non-volatile memory structure and method of fabrication A method for creating a non-volatile memory array includes implanting pocket implants in a substrate at least between mask columns of a given width and at least through an ONO layer covering the substrate, generating increased-width polysilicon columns from the mask... | 06/21/2011 |
| 7939401 | Dual gate structure, fabrication method for the same, semiconductor device having the same, and semiconductor device fabrication method In one embodiment, a semiconductor device includes at least two stacked gate structures formed on a substrate. The two stacked gate structures each include a semiconductor layer and a metal layer over the semiconductor layer. The two stacked gate structures on the s... | 05/10/2011 |
| 7919367 | Method to increase charge retention of non-volatile memory manufactured in a single-gate logic process A non-volatile memory cell with increased charge retention is fabricated on the same substrate as logic devices using a single-gate conventional logic process. A silicide-blocking dielectric structure is formed over a floating gate of the NVM cell, thereby preventin... | 04/05/2011 |
| 7910424 | Semiconductor memory and fabrication method for the same A semiconductor memory includes memory cell transistors including a tunnel insulating film, a floating gate electrode, a first insulating film, a control gate electrode, and a first metal salicide film; low-voltage transistors having a first p-type source region and... | 03/22/2011 |
| 7897448 | Formation of high voltage transistor with high breakdown voltage A high voltage transistor exhibiting an improved breakdown voltage and related methods are provided. For example, a method of manufacturing an integrated circuit includes etching a poly silicon layer to provide a gate stacked above a floating gate of a flash memory ... | 03/01/2011 |
| 7892909 | Polysilicon gate formation by in-situ doping A method for forming a semiconductor structure includes providing a semiconductor substrate; forming a gate dielectric layer on the semiconductor substrate; forming a first silicon-containing layer on the gate dielectric layer, wherein the first silicon-containing l... | 02/22/2011 |
| 7867837 | Process for manufacturing rounded polysilicon electrodes on semiconductor components A polysilicon layer provided for a polysilicon electrode (8) is patterned by means of a resist mask (5) and an auxiliary layer (4) made of a material that is suitable as an antireflection layer, the auxiliary layer (4) being provided with... | 01/11/2011 |
| 7858464 | Methods of manufacturing non-volatile memory devices having insulating layers treated using neutral beam irradiation Methods of manufacturing non-volatile memory devices that can reduce or prevent loss of charges stored in a charge storage layer and/or that can improve charge storage capacity by neutral beam irradiation of an insulating layer are disclosed. The methods include for... | 12/28/2010 |
| 7858463 | Semiconductor integrated circuit device and method of producing the same A semiconductor integrated circuit device includes a substrate, a nonvolatile memory device formed in a memory cell region of the substrate, and a semiconductor device formed in a device region of the substrate. The nonvolatile memory device has a multilayer gate el... | 12/28/2010 |
| 7851292 | Methods of forming and programming floating-gate memory cells having carbon nanotubes Floating-gate memory cells having carbon nanotubes interposed between the substrate and the tunnel dielectric layer facilitate ballistic injection of charge into the floating gate. The carbon nanotubes may extend across the entire channel region or a portion of the ... | 12/14/2010 |
| 7846788 | Semiconductor device and method of fabrication thereof A method includes the steps of: introducing insulation film into a trench to provide a trench isolation; planarizing the trench isolation to expose a passivation film; and removing the passivation film and depositing a second silicon layer on a first silicon layer a... | 12/07/2010 |
| 7833856 | Semiconductor device and method of manufacturing same According to an aspect of the invention, there is provided a semiconductor device comprising a semiconductor substrate, a first insulating layer formed on the semiconductor substrate, a first conductive layer formed as a floating gate on the first insulating layer, ... | 11/16/2010 |
| 7829404 | Method of making a semiconductor memory array of floating gate memory cells with program/erase and select gates A memory device, and method of making and operating the same, including a substrate of semiconductor material of a first conductivity type, first and second spaced apart regions in the substrate of a second conductivity type with a channel region therebetween, an el... | 11/09/2010 |
| 7785953 | Method for forming trenches on a surface of a semiconductor substrate A method for forming trenches on a surface of a semiconductor substrate is described. The method may include: etching a first plurality of trenches into the surface of the semiconductor substrate; filling the first plurality of trenches with at least one material; a... | 08/31/2010 |
| 7785954 | Semiconductor memory integrated circuit and its manufacturing method A method of manufacturing a semiconductor memory integrated circuit intended to improve properties and reliability of its peripheral circuit includes the step of forming a tunnel oxide film (21a) in the cell array region, gate oxide film (21b... | 08/31/2010 |
| 7781279 | Method for manufacturing a memory A method for manufacturing a memory includes first providing a substrate with a horizontally adjacent control gate region and floating gate region which includes a sacrificial layer and sacrificial sidewalls, removing the sacrificial layer and sacrificial sidewalls ... | 08/24/2010 |
| 7776677 | Method of forming an EEPROM device and structure therefor In one embodiment, an EEPROM device is formed to include a metal layer having an opening therethrough. The opening overlies a portion of a floating gate of the EEPROM device. ... | 08/17/2010 |
| 7741170 | Dielectric structure in nonvolatile memory device and method for fabricating the same A dielectric structure in a nonvolatile memory device and a method for fabricating the same are provided. The dielectric structure includes: a first oxide layer; a first high-k dielectric film formed on the first oxide layer, wherein the first high-k dielectric film... | 06/22/2010 |
| 7732271 | Method for manufacturing NAND-type semiconductor storage device According to this invention, there is provided a NAND-type semiconductor storage device including a semiconductor substrate, a semiconductor layer formed on the semiconductor substrate, a buried insulating film selectively formed between the semiconductor substrate ... | 06/08/2010 |
| 7718483 | Method of manufacturing non-volatile semiconductor memory In a method for manufacturing a non-volatile semiconductor device according to this invention, steps are provided for forming a plurality of first semiconductor portions over a substrate; selectively growing a plurality of second semiconductor portions in contacting... | 05/18/2010 |
| 7709315 | Semiconductor device and method of manufacturing the same An interface between a bottom oxide film and a silicon nitride film in a neighborhood of a bottom part of a select gate is located at a position as high as or higher than that of an interface between a silicon substrate (p-type well) and a gate insulating film (d≧... | 05/04/2010 |
| 7700426 | Nonvolatile memory device and method of forming the same Provided is a nonvolatile memory device and a method of forming the nonvolatile memory device. The nonvolatile memory device includes a floating gate formed on a first active region doped with a first-conductivity-type dopant. The floating gate is doped with the fir... | 04/20/2010 |
| 7700427 | Integrated circuit having a Fin structure Embodiments of the invention relate generally to a method for manufacturing an integrated circuit, a method for manufacturing a cell arrangement, an integrated circuit, a cell arrangement, and a memory module. In an embodiment of the invention, a method for manufact... | 04/20/2010 |
| 7682894 | Flash memory and a method of manufacturing the same The present invention provides a method of manufacturing a flash memory device. The method includes forming a gate oxide layer on a semiconductor substrate, forming a floating gate including protrusions and depressions on its surface by patterning polysilicon deposi... | 03/23/2010 |
| 7682893 | Method and apparatus for providing an instrument playing service A method and apparatus for providing an instrument playing service in a portable terminal. In the method, an image of an instrument is projected. User finger movements on the projected instrument image are detected and sound source information corresponding to the u... | 03/23/2010 |
