"The idea that cavalry will be replaced by these iron coaches is absurd. It is little short of treasonous."
Aide-de-camp to Field Marshal Haig ; At a tank demonstration, 1916
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8110417 | Method of forming pattern on group III nitride semiconductor substrate and method of manufacturing group III nitride semiconductor light emitting device There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect of the invention may include: irradiating a laser beam onto at least o... | 02/07/2012 |
| 8053258 | Thick film sealing glass compositions for low temperature firing The present invention is a composition that may be used for sealing applications in the manufacture of electronic devices. The composition includes organic vehicles that may be removed upon low temperature firing in air or inert atmospheres. The present invention is... | 11/08/2011 |
| 8017413 | Field emission array having carbon microstructure and method of manufacturing the same Provided is a method for manufacturing a field emission array with a carbon microstructure. The method includes: a photomask attachment step of attaching a photomask with a pattern groove to one surface of a transparent substrate; a photoresist attachment step of at... | 09/13/2011 |
| 7989233 | Semiconductor nanowire with built-in stress A semiconductor nanowire having two semiconductor pads on both ends is suspended over a substrate. Stress-generating liner portions are formed over the two semiconductor pads, while a middle portion of the semiconductor nanowire is exposed. A gate dielectric and a g... | 08/02/2011 |
| 7875469 | Method of operating and process for fabricating an electron source A method of operating and process for fabricating an electron source. A conductive rod is covered by an insulating layer, by dipping the rod in an insulation solution, for example. The rod is then covered by a field emitter material to form a layered conductive rod.... | 01/25/2011 |
| 7842522 | Well formation Composition of carbon nanotubes (CNTs) are produced into inks that are dispensable via ink jet or other deposition processes. The CNT ink is dispensed into wells and allowed to dry so as to formed a cathode structure. It is important to note that after the CNT ink i... | 11/30/2010 |
| 7829358 | System and method for emitter layer shaping Embodiments of an LED disclosed has an emitter layer shaped to a controlled depth or height relative to a substrate of the LED to maximize the light output of the LED and to achieve a desired intensity distribution. In some embodiments, the exit face of the LED may ... | 11/09/2010 |
| 7816155 | Mounted semiconductor device and a method for making the same A method for mounting a semiconductor device onto a composite substrate, including a submount and a heat sink, is described. According to one aspect of the invention, the materials for the submount and the heat sink are chosen so that the value of coefficient of the... | 10/19/2010 |
| 7785907 | Method for manufacturing cathode assembly of field emission display A method for manufacturing a cathode assembly of a field emission display, includes the steps of: providing a substrate (110) with a cathode (113) formed thereon; forming an electrically insulating layer (120), a gate electrode layer (130... | 08/31/2010 |
| 7759138 | Silicon microchannel plate devices with smooth pores and precise dimensions A method of fabricating a microchannel plate includes forming a plurality of pores in a silicon substrate. The plurality of pores is oxidized, thereby consuming silicon at surfaces of the plurality of pores and forming a silicon dioxide layer over the plurality of p... | 07/20/2010 |
| 7713765 | Optical semiconductor device and method for manufacturing the same A method for manufacturing a semiconductor device having a compound semiconductor layer that is provided on a substrate and includes a cladding layer of a first conductivity type, an activation layer, a cladding layer of a second conductivity type that is the opposi... | 05/11/2010 |
| 7700384 | Nitride semiconductor light emitting device and manufacturing method thereof An object is to provide a nitride semiconductor light emitting device capable of attaining high light emission output while lowering Vf, as well as to provide a manufacturing method thereof. The invention relates to a nitride semiconductor light emitting device, inc... | 04/20/2010 |
| 7651875 | Catalysts Nanostructured surface materials having patterned indents are disclosed and there use for catalytic, therapeutic, herbicidal, pesticidal, antiviral, antibacterial and antifungal applications is disclosed. ... | 01/26/2010 |
| 7645622 | Method of producing nitride-based semiconductor device, and light-emitting device produced thereby A method of producing a nitride-based semiconductor device includes the steps of growing an InxAlyGa1-x-yN (0≦x, 0≦y, x+y | 01/12/2010 |
| 7642107 | Split transfer gate for dark current suppression an imager pixel A pixel with a photosensor and a transfer transistor having a split transfer gate. A first section of the transfer gate is connectable to a first voltage source while a second section of the transfer gate is connectable to a second voltage source. Thus, during a cha... | 01/05/2010 |
| 7595206 | Manufacturing method for semiconductor light emitting device A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. The semiconductor layer can inc... | 09/29/2009 |
| 7592191 | Field emission backplate A field emission backplate formed by laser crystallizing of an area of amorphous semiconductor based material. Emitter sites result from the rough surface texture caused by the crystallization process. The crystallization may be localized using laser interferometry,... | 09/22/2009 |
| 7585687 | Electron emitter device for data storage applications and method of manufacture A field emission device, which among other things may be used within an ultra-high density storage system, is disclosed. The emitter device includes an emitter electrode, an extractor electrode, and a solid-state field controlled emitter that utilizes a Schottky met... | 09/08/2009 |
| 7544523 | Method of fabricating nanodevices A method of batch fabrication using established photolithographic techniques allowing nanoparticles or nanodevices to be fabricated and mounted into a macroscopic device in a repeatable, reliable manner suitable for large-scale mass production. Nanoparticles can be ... | 06/09/2009 |
| 7527988 | Triode structure field emission display device using carbon nanotubes and method of fabricating the same A field emission display device and a method of fabricating the same are provided. The field emission display device may include a substrate, a transparent cathode layer, an insulation layer, a gate electrode, a resistance layer, and carbon nanotubes. The transparen... | 05/05/2009 |
| 7470554 | Forming method of stacking structure and manufacturing method of electron source and image display apparatus using such method A method of forming a stacking structure by forming an electroconductive layer precursor pattern by an electroconductive paste made of a resin component, electroconductive fine particles, and glass fine particles, forming a dielectric layer precursor pattern by a di... | 12/30/2008 |
| 7462498 | Activation of carbon nanotubes for field emission applications Substantially enhanced field emission properties are achieved by using a process of covering a non-adhesive material (for example, paper, foam sheet, or roller) over the surface of the CNTs, pressing the material using a certain force, and removing the material.... | 12/09/2008 |
| 7462499 | Carbon nanotube with ZnO asperities A ZnO asperity-covered carbon nanotube (CNT) device has been provided, along with a corresponding fabrication method. The method comprises: forming a substrate; growing CNTs from the substrate; conformally coating the CNTs with ZnO; annealing the ZnO-coated CNTs; an... | 12/09/2008 |
| 7452735 | Carbon nanotube deposition with a stencil Composition of carbon nanotubes (CNTs) are produced into inks that are dispensable via printing or stencil printing processes. The CNT ink is dispensed into wells formed in a cathode structure through a stencil. ... | 11/18/2008 |
| 7435689 | Process for fabricating electron emitting device, electron source, and image display device A process for fabricating an electron emitting device comprises a cathode electrode and a gate electrode are laminated through an insulating layer and an electron emitting film on the cathode electrode located in a gate hole penetrating through the gate electrode an... | 10/14/2008 |
| 7419843 | Method of manufacturing semiconductor probe having resistive tip A method of manufacturing a semiconductor probe having a resistive tip. The method includes forming first and second mask films having a rectangular shape on a silicon substrate, first etching an upper surface of the silicon substrate, forming a third mask film corr... | 09/02/2008 |
| 7411341 | Gated nanorod field emitter structures and associated methods of fabrication The present invention relates to gated nanorod field emission devices, wherein such devices have relatively small emitter tip-to-gate distances, thereby providing a relatively high emitter tip density and low turn on voltage. Such methods employ a combination of tra... | 08/12/2008 |
| 7405092 | Method of manufacturing electron-emitting device and method of manufacturing image display apparatus A method of manufacturing an electron-emitting device with a stable electrical characteristics without variation per each of the devices is provided, by forming, on a substrate, a cathode electrode, a carbon layer on the cathode electrode, and a gate electrode, disp... | 07/29/2008 |
| 7402445 | Method of forming micro-structures and nano-structures Methods of forming a nano-structure for electron extraction are disclosed. One method of forming a nano-structure comprises irradiating an area on a first surface of a thermal conductive film to melt the area across the film. The film is insulated on a second surfac... | 07/22/2008 |
| 7381578 | Electrifying method and manufacturing method of electron-source substrate A method according to the present invention is for electrifying a plurality of electric conductors arranged on a substrate including the step of setting an average temperature difference during electrifying processing between a region S0 in that the plura... | 06/03/2008 |
| 7372193 | Cold cathode light emitting device with nano-fiber structure layer, manufacturing method thereof and image display A cold cathode light emitting device includes a plurality of first electrodes, a plurality of insulating layers, a plurality of second electrodes and a third electrode. The insulating layers are laminated on the first electrodes. The second electrodes are provided o... | 05/13/2008 |
| 7367119 | Method for forming a reinforced tip for a probe storage device Systems and methods in accordance with the present invention can include a tip contactable with a media. In an embodiment, the tip comprises a substantially hollow structure formed of a metal. The tip can be formed by depositing a first metal layer over silicon ther... | 05/06/2008 |
| 7368823 | Semiconductor device and method of manufacturing the same A method of manufacturing a semiconductor device having an interconnection part formed of multiple carbon nanotubes is disclosed. The method includes the steps of (a) forming a growth mode control layer controlling the growth mode of the carbon nanotubes, (b) formin... | 05/06/2008 |
| 7368305 | High aspect ratio micromechanical probe tips and methods of fabrication A method of fabricating high aspect ratio micromechanical tips is provided. The method includes, but is not limited to, forming an etchant protective island on a surface of a silicon substrate with the silicon substrate exposed around the island; isotropically etchi... | 05/06/2008 |
| 7370306 | Method and apparatus for designing a pattern on a semiconductor surface A method of forming a pattern of elements is shown. In one embodiment, the method is used to create a reticle. In another embodiment, the method is used to further form a number of elements on a surface of a semiconductor wafer. Identified problem structures or regi... | 05/06/2008 |
| 7368306 | Field emission device and manufacturing method thereof It is an object to provide techniques for forming a field emission device of a field emission display device with the use of an inexpensive large-sized substrate according to the process that enables improving productivity. A field emission device according t... | 05/06/2008 |
| 7365481 | Field emission device with change in emission property A field emission device having cold cathode devices including an emitter and a lead electrode, and the field emission device is provided with the plural kinds of cold cathode device groups classified based on the emission property of the cold cathode device. This fi... | 04/29/2008 |
| 7364924 | Silicon phosphor electroluminescence device with nanotip electrode An electroluminescence (EL) device and a method are provided for fabricating said device with a nanotip electrode. The method comprises: forming a bottom electrode with nanotips; forming a Si phosphor layer adjacent the nanotips; and, forming a transparent top elect... | 04/29/2008 |
| 7364978 | Method of fabricating semiconductor device There is provided a method of fabricating semiconductor devices that allows ion implantation to be performed at high temperature with ions accelerated with high energy to help to introduce dopant in a semiconductor substrate, in particular a SiC semiconductor substr... | 04/29/2008 |
| 7362609 | Memory cell A one-transistor (1T) NVRAM cell that utilizes silicon carbide (SiC) to provide both isolation of non equilibrium charge, and fast and non destructive charging/discharging. To enable sensing of controlled resistance (and many memory levels) rather than capacitance, ... | 04/22/2008 |