Did You Know...
...that it was melting ice cream that inspired the invention of the outboard motor? It was a lovely August day and Ole Evinrude was rowing his boat to his favorite island picnic spot. As he rowed, he watched his ice cream melt and wished he had a faster way to get to the island. At that moment the idea for the outboard motor was born!
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| Number | Title | Issue Date |
| 8148219 | Thick oxide P-gate NMOS capacitor for use in a low-pass filter of a circuit and method of making same A circuit with dielectric thicknesses is presented that includes a low-pass filter including one or more semiconductor devices having a thick gate oxide layer, while further semiconductor devices of the circuit have thin gate oxide layers. The low-pass filter semico... | 04/03/2012 |
| 7989279 | Method of fabricating semiconductor device A method of fabricating a semiconductor device in which a plurality of conductive lines having a fine pitch and a uniform thickness can be formed is provided. The method includes forming a plurality of first conductive patterns in a insulation layer as closed curves... | 08/02/2011 |
| 7439104 | Semiconductor device with increased channel length and method for fabricating the same A semiconductor device with an increased channel length and a method for fabricating the same are provided. The semiconductor device includes: a substrate with an active region including a planar active region and a prominence active region formed on the planar acti... | 10/21/2008 |
| 7435653 | Methods for forming a wrap-around gate field effect transistor A field effect transistor is formed having wrap-around, vertically-aligned, dual gate electrodes. Starting with a silicon-on-insulator (SOI) structure having a buried silicon island, a vertical reference edge is defined, by creating a cavity within the SOI structure... | 10/14/2008 |
| 7338870 | Methods of fabricating semiconductor devices Methods of recovering damage on a semiconductor device by performing a hydrogen annealing process are disclosed. An example disclosed method includes forming an STI structure on a semiconductor substrate; forming a gate electrode and spacers on the sidewalls of the ... | 03/04/2008 |
| 7220636 | Process for controlling performance characteristics of a negative differential resistance (NDR) device A variety of processes are disclosed for controlling NDR characteristics for an NDR element, such as peak-to-valley ratio (PVR), NDR onset voltage (VNDR) and related parameters. The processes are based on conventional semiconductor manufacturing operation... | 05/22/2007 |
| 6977185 | Printhead integrated circuit An integrated circuit is formed on a substrate. The integrated circuit includes a transistor formed in the substrate. The transistor has a gate that forms at least one closed-loop. The integrated circuit also includes an ejection element that is coupled to the trans... | 12/20/2005 |
| 6913958 | Method for patterning a feature using a trimmed hardmask In the formation of a semiconductor device, one or more hardmasks are formed during a process for patterning a device feature. One or more of the hardmasks is subjected to an isotropic etch to trim the hardmask prior to patterning an underlying layer. The trimmed ha... | 07/05/2005 |
| 6849483 | Charge trapping device and method of forming the same A charge trapping device, and a method of forming the same is disclosed. Charge traps are optimally distributed through a trapping region based on controlling various conventional processing operations, such as an implant, an anneal, an insulator film deposition, an... | 02/01/2005 |
| 6759286 | Method of fabricating a gate structure of a field effect transistor using a hard mask A method of fabricating a gate structure of a field effect transistor, comprising forming a hard mask, etching a gate electrode, and contemporaneously forming a gate dielectric and removing the hard mask. ... | 07/06/2004 |
| 5147812 | Fabrication method for a sub-micron geometry semiconductor device A method for fabricating a sub-micron geometry semiconductor device using a chromeless mask. An optical exposure system (22) directs light through a chromeless mask (21). The chromeless mask (21) uses destructive interference of light to pattern a light s... | 09/15/1992 |
| 4729966 | Process for manufacturing a Schottky FET device using metal sidewalls as gates A first insulative film is formed with predetermined height and thickness in a loop shape on the surface of the Schottky-junction semiconductor substrate. A gate electrode metal film is formed with a predetermined height and thickness in a loop shape on t... | 03/08/1988 |
