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| Number | Title | Issue Date |
| 8178367 | Process condition evaluation method for liquid crystal display module A process condition evaluation method for a liquid crystal display module (LCM) includes: a first step of obtaining a threshold power measuring pattern, an analysis sample for a cell bonding status in an LCD fabrication process, and obtaining a lower substrate sampl... | 05/15/2012 |
| 8168452 | Method for manufacturing semiconductor device A method for manufacturing a semiconductor device, the semiconductor device including an integrated circuit having plural connection terminals arranged on a predetermined local region of the integrated circuit, plural metal bumps, and a wiring layer connected to at ... | 05/01/2012 |
| 8153452 | Manufacturing method of semiconductor device The semiconductor device is formed by forming a first metal film over a first main surface of a semiconductor wafer having a first thickness, performing back grinding to a second main surface of the semiconductor wafer thereby making a second thickness thinner than ... | 04/10/2012 |
| 8124429 | Reprogrammable circuit board with alignment-insensitive support for multiple component contact types The present invention is directed to a system that programmably interconnects integrated circuit chips and other components at near-intra-chip density. The system's contact structure allows it to adapt to components with a wide variety of contact spacings and interc... | 02/28/2012 |
| 8114687 | Adapter board and method for manufacturing same, probe card, method for inspecting semiconductor wafer, and method for manufacturing semiconductor device A method of manufacturing a semiconductor device includes preparing two package substrates, electrically coupling a semiconductor wafer to a measuring apparatus, inspecting the wafer, dicing the semiconductor wafer into semiconductor elements and packaging the semic... | 02/14/2012 |
| 8110416 | AC impedance spectroscopy testing of electrical parametric structures Defects in components in ICs which may cause circuit failures during operation of the IC are often difficult to detect during and immediately after fabrication of the IC by DC test methods. A method of testing components to detect such defects using AC Impedance Spe... | 02/07/2012 |
| 8093074 | Analysis method for semiconductor device An analysis method for a semiconductor device is described. The semiconductor device having an abnormal region is provided. Thereafter, a focused ion beam microscope analysis process is performed to the abnormal region, wherein the result of the focused ion beam mic... | 01/10/2012 |
| 8088634 | Methods of adding pads and one or more interconnect layers to the passivated topside of a wafer including connections to at least a portion of the integrated circuit pads thereon A pattern of conductive ink is disposed on the topside of the unsingulated integrated circuits of a wafer, and, typically after wafer probing, the pattern of conductive ink is removed. The conductive ink pattern provides an electrical pathway between bond pads on an... | 01/03/2012 |
| 8084279 | Method of manufacturing semiconductor device that uses both a normal photomask and a phase shift mask for defining interconnect patterns According to one embodiment of the present invention, a method of manufacturing a semiconductor device includes below steps. A step of preparing a phase shift mask and a normal photomask. A step of stacking a first wiring layer on a semiconductor substrate, and furt... | 12/27/2011 |
| 8062911 | Method of manufacturing a semiconductor integrated circuit device and a method of manufacturing a thin film probe sheet for using the same A probe having a sufficient height is manufactured by selectively depositing, over the main surface of a wafer, a copper film in a region in which a metal film is to be formed and a region which will be outside an adhesion ring when a probe card is fabricated; formi... | 11/22/2011 |
| 8053257 | Method for prediction of premature dielectric breakdown in a semiconductor The invention predicts premature dielectric breakdown in a semiconductor. At least one dielectric breakdown mode is calculated for a layer within chips comprising a semiconductor wafer lot. If only one mode is calculated, that is the best calculated mode. If multipl... | 11/08/2011 |
| 8039276 | Manufacturing method of semiconductor device The semiconductor device si formed by forming a first metal film over a first main surface of a semiconductor wafer having a first thinkness, performing back grinding to a second main surface of the semiconductor wafer thereby making a second thickness thinner than ... | 10/18/2011 |
| 8030099 | Method for determining time to failure of submicron metal interconnects The present disclosure is related to a method for determining time to failure characteristics of a microelectronics device. A test structure, being a parallel connection of a plurality of such on-chip interconnects, is provided. Measurements are performed on the tes... | 10/04/2011 |
| 8030100 | Chemical sensor The application relates to a chemical sensor device comprising a substrate (1), a sensor medium (3) formed on the substrate, the sensor medium comprising one-dimensional nanoparticles, wherein the one-dimensional nanoparticles essentially consist of a ... | 10/04/2011 |
| 7977124 | Semiconductor device and method of designing the same A semiconductor device includes a first wiring layer, a second wiring layer and an insulating layer provided between the first wiring layer and the second wiring layer. A capacitor has a first electrode formed on the first wiring layer and a second electrode formed ... | 07/12/2011 |
| 7977125 | Display apparatus and method of manufacturing the same In a display apparatus and a method of manufacturing the display apparatus, a gate line, a data line, and a plurality of layers are formed on an array substrate on which a pixel area, a pad area, and a peripheral area are defined. During the forming processes of the... | 07/12/2011 |
| 7955877 | Method for simulating long-term performance of a non-volatile memory by exposing the non-volatile memory to heavy-ion radiation Testing a non volatile memory by exposing the non volatile memory to particle radiation (e.g. xenon ions) to emulate memory cell damage due to data state changing events of a non volatile memory cell. After the exposing, the memory cells are subjected to tests and t... | 06/07/2011 |
| 7943401 | Detection and reduction of dielectric breakdown in semiconductor devices Methods for detecting the breakdown potential of a semiconductor device having a thin dielectric layer are disclosed. The method includes measuring a spectroscopy of the thin dielectric layer and determining whether the spectroscopy exhibits the presence of a breakd... | 05/17/2011 |
| 7943402 | Ion implantation process characterization method A method of characterizing an ion implantation process, the method including a first step of producing a PN junction degraded by the ion implantation of species, the species implantation being obtained by the ion implantation process to be characterized; a second st... | 05/17/2011 |
| 7932105 | Systems and methods for detecting and monitoring nickel-silicide process and induced failures Systems and methods for detecting and monitoring Nickel-silicide process and induced failures. In a first method embodiment, a method of characterizing a Nickel-silicide semiconductor manufacturing process includes accessing a test chip including a parallel coupled ... | 04/26/2011 |
| 7923268 | Method of measuring resistivity of sidewall of contact hole A method of measuring a resistivity of a sidewall of a contact hole formed in a semiconductor device, wherein said semiconductor device includes a first electrode formed on a substrate; a second electrode formed on the first electrode with an insulating film in betw... | 04/12/2011 |
| 7901956 | Structure for bumped wafer test A semiconductor package includes a substrate having a bond pad disposed on a top surface of the substrate. A first passivation layer is formed over the substrate and bond pad. The first passivation layer has an opening to expose the bond pad. An under bump metallurg... | 03/08/2011 |
| 7892865 | Method of manufacturing a single chip semiconductor integrated circuit device including a mask ROM in a short time In a state of a first semiconductor integrated circuit device on which a first semiconductor integrated circuit board including a first mask ROM and a programmable ROM are mounted, an ultimate program determined by using the programmable ROM is stored in a second RO... | 02/22/2011 |
| 7883909 | Method to measure ion beam angle A device and method for measuring ion beam angle with respect to a substrate is disclosed. The method includes forming a plurality of shadowing structures extending substantially perpendicular from an upper surface of the substrate, directing an ion beam toward the ... | 02/08/2011 |
| 7858405 | Process condition evaluation method for liquid crystal display module A process condition evaluation method for a liquid crystal display module (LCM) includes: a first step of obtaining a threshold power measuring pattern, an analysis sample for a cell bonding status in an LCD fabrication process, and obtaining a lower substrate sampl... | 12/28/2010 |
| 7829356 | Thin film scribe process A method and apparatus for improving a thin film scribing procedure is presented. Embodiments of the invention include a method and apparatus for determining a scribe setting for removal of an absorber layer of a photovoltaic device that improves contact resistance ... | 11/09/2010 |
| 7824933 | Method of determining n-well scattering effects on FETs A process is provided for determining the effects of scattering from the edge of a resist during a doping process. Edges of a resist which has been patterned to create an n-well are simulated and individually stepped across a predetermined region in predetermined st... | 11/02/2010 |
| 7824934 | Substrate processing apparatus, parameter management system for substrate processing apparatus, parameter management method for substrate processing apparatus, program, and storage medium A substrate processing apparatus which enables parameters for carrying out processing on substrates to be changed easily by a user. A storage device stores parameters that are for controlling the processing and are categorized into a plurality of categories. A contr... | 11/02/2010 |
| 7816154 | Semiconductor device, a method of manufacturing a semiconductor device and a testing method of the same A semiconductor device for SiP or PoP for downsizing, a method of manufacturing it, and a testing method suitable for SiP and PoP in which the simplification of a system and the enhancement of its efficiency are achieved are provided. A first semiconductor device in... | 10/19/2010 |
| 7803642 | Evaluation method of semiconductor device A technology for analyzing and evaluating of a change of impurity content distribution at the heat treatment of electrodeposited copper film. There is provided a method of evaluating a semiconductor device, comprising providing an electrodeposited copper film formed... | 09/28/2010 |
| 7803643 | Method of forming a high voltage sense element In one embodiment, a method of forming a high voltage element includes forming a sense element overlying at least a portion of a semiconductor substrate, and also includes operably coupling a first circuit to use a sense signal formed by the sense element for one of... | 09/28/2010 |
| 7785906 | Method to detect poly residues in LOCOS process A test structure which can be used to detect residual conductive material such as polysilicon which can result from an under etch comprises a PMOS transistor and an OTP EPROM floating gate device. By testing the devices using different testing parameters, it can be ... | 08/31/2010 |
| 7781238 | Methods of making and using integrated and testable sensor array A method for making a testable sensor assembly is provided. The method includes forming a first sensor array on a first substrate having a first side and a second side, wherein the first sensor array is formed on the first side of the first substrate, coupling a fir... | 08/24/2010 |
| 7749777 | Method of applying electrical stress to low-temperature poly-crystalline thin film transistor A low-temperature poly-crystalline thin film transistor in which amorphous silicon is crystallized using a laser crystallization method or a metal induced lateral crystallization method shows an unstable electrical property since crystallization is accomplished at a... | 07/06/2010 |
| 7749778 | Addressable hierarchical metal wire test methodology A method of monitoring and testing electro-migration and time dependent dielectric breakdown includes forming an addressable wiring test array, which includes a plurality or horizontally disposed metal wiring and a plurality of segmented, vertically disposed probing... | 07/06/2010 |
| 7749779 | Landing pad for use as a contact to a conductive spacer A landing pad for use as a contact to a conductive spacer adjacent a structure in a semiconductor device comprises two islands, each of which is substantially rectangularly shaped and is spaced apart from one another and from the structure. Conductive spacers are ad... | 07/06/2010 |
| 7741132 | Display panel, display panel inspection method, and display panel manufacturing method A method of inspecting a display panel, which is capable of distinguishing between whether an EL panel is a good product or a defective product before sealing of the display panel, is provided. In a first method of inspection, a conductive film is patterned to formi... | 06/22/2010 |
| 7741133 | Resistance measurements of a helical coil Test methods and components are disclosed for testing resistances of helical coils formed in magnetic recording heads. Helical coils in magnetic recording heads include a bottom coil structure, a top coil structure, and connecting structures that electrically connec... | 06/22/2010 |
| 7727783 | Method of measuring minority carrier diffusion length and method of manufacturing silicon wafer A method of measuring a diffusion length of a minority carrier in a silicon wafer by a surface photovoltage method including irradiating the surface-treated silicon wafer with ultraviolet radiation in an oxygen-containing atmosphere, and measuring a diffusion length... | 06/01/2010 |
| 7687286 | Method and apparatus for determining the thickness of a dielectric layer The method for determining the thickness of a dielectric layer according to the invention comprises the step of providing an electrically conductive body having a dielectric layer which is separated from the electrically conductive body by at least a further dielect... | 03/30/2010 |
