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| Number | Title | Issue Date |
| 8143118 | TFT device with channel region above convex insulator portions and source/drain in concave between convex insulator portions A semiconductor device having a highly responsive thin film transistor (TFT) with low subthreshold swing and suppressed decrease in the on-state current and a manufacturing method thereof are demonstrated. The TFT of the present invention is characterized by its sem... | 03/27/2012 |
| 8119469 | Method of fabricating polycrystalline silicon thin film for improving crystallization characteristics and method of fabricating liquid crystal display device using the same A crystallization method of an amorphous semiconductor layer includes providing an amorphous semiconductor layer having a first thickness, crystallizing the amorphous semiconductor layer in a first direction, partially reducing the crystallized semiconductor layer t... | 02/21/2012 |
| 8076187 | Mask pattern, method of fabricating thin film transistor, and method of fabricating organic light emitting display device using the same A method of fabricating a polycrystalline silicon thin film for a thin film transistor (TFT), a mask pattern used for the method, and a method of fabricating a flat panel display device using the method and the mask pattern. In one embodiment, a mask pattern include... | 12/13/2011 |
| 8053296 | Capacitor formed on a recrystallized polysilicon layer The present invention provides a semiconductor device, a method of manufacture therefor, and an integrated circuit including the semiconductor device. The semiconductor device, among other elements, includes a recrystallized polysilicon layer 148 located over... | 11/08/2011 |
| 8053297 | Method of fabricating a thin film transistor using joule heat from the gate electrode to form a crystallized channel region A thin film transistor (TFT) having improved characteristics, a method for fabricating the same, and an organic light emitting display device (OLED) including the same. The TFT is constructed with a substrate, a semiconductor layer disposed on the substrate and incl... | 11/08/2011 |
| 8043905 | Semiconductor device and method of fabricating the same To provide a thin film transistor having a high field effect mobility and a small variation in characteristics thereof, a second amorphous semiconductor layer patterned in a predetermined shape is formed on a first crystalline semiconductor layer 17 for const... | 10/25/2011 |
| 7993994 | Method of forming crystallized silicon and method of fabricating thin film transistor and liquid crystal display using the same A method of crystallizing amorphous silicon comprises forming an amorphous silicon layer on a substrate; forming an insulating layer on the amorphous silicon layer; forming a heat distributing metal layer on the insulating layer; and forming a thermite layer on the ... | 08/09/2011 |
| 7985635 | Laser process A laser annealing process for recovering crystallinity of a deposited semiconductor film such as of silicon which had undergone morphological damage, said process comprising activating the semiconductor by irradiating a pulsed laser beam operating at a wavelength of... | 07/26/2011 |
| 7985636 | Method for fabricating low temperature poly-silicon thin film transistor substrate An exemplary method for fabricating an LTPS-TFT substrate is as follows. In step S1, a p-Si pattern including a source electrode contact region and a drain electrode contact region of a first type TFT, a source electrode contact region and a drain electrode c... | 07/26/2011 |
| 7964456 | Method of fabricating polysilicon thin film and thin film transistor using polysilicon fabricated by the same method A method of fabricating a polysilicon thin film produces a polysilicon thin film which is used to make a thin film transistor. The method includes depositing a silicon film containing amorphous silicon on a substrate, and performing thermal treatment on the silicon ... | 06/21/2011 |
| 7955916 | Method for making semiconductor apparatus and semiconductor apparatus obtained by the method, method for making thin film transistor substrate and thin film transistor substrate obtained by the method, and method for making display apparatus and display apparatus obtained by the method A method for making a semiconductor apparatus including the steps of: forming a laminate structure of an insulating film made of a metal oxide and a semiconductor thin film on a substrate; forming a light absorption layer on top of the laminate structure; and irradi... | 06/07/2011 |
| 7943447 | Methods of fabricating crystalline silicon, thin film transistors, and solar cells The present invention includes methods to crystallize amorphous silicon. A structure including a conductive film with at least one conductive layer in thermal contact with an amorphous silicon (a-Si) layer to be crystallized is exposed to an alternating or varying m... | 05/17/2011 |
| 7935584 | Method for manufacturing crystalline semiconductor device There is provided a method for manufacturing a crystalline semiconductor film. An insulating film is formed over a substrate; an amorphous semiconductor film is formed over the insulating film; a cap film is formed over the amorphous semiconductor film; the amorphou... | 05/03/2011 |
| 7935586 | Thin film transistor and method for fabricating the same A thin film transistor that has improved characteristics and uniformity is developed by uniformly controlling low concentration of crystallization catalyst and controlling crystallization position so that no seed exists and no grain boundary exists, or one grain bou... | 05/03/2011 |
| 7935585 | Method of fabricating semiconductor device and method for fabricating electronic device A method for fabricating a semiconductor device, comprising: forming a semiconductor film on a substrate; and recrystallizing the semiconductor film using as a heat source flame of a gas burner that uses hydrogen and oxygen gas mixture as a fuel. ... | 05/03/2011 |
| 7932139 | Methodology of improving the manufacturability of laser anneal A method of laser annealing a workpiece for reduction of warpage, slip defects and breakage, the method comprising (a) moving a workpiece through a laser beam in a x-axis first direction, (b) moving the workpiece in a y-axis second direction, (c) moving the workpiec... | 04/26/2011 |
| 7927936 | Laser mask and crystallization method using the same A crystallization method includes providing a substrate having a silicon thin film; positioning a laser mask having first to fourth blocks on the substrate, each block having a periodic pattern including a plurality of transmitting regions and a blocking region; and... | 04/19/2011 |
| 7927937 | Fabrication of large grain polycrystalline silicon film by nano aluminum-induced crystallization of amorphous silicon One aspect of the present invention relates to a method for fabricating a polycrystalline silicon film. In one embodiment, the method includes the steps of providing a substrate having a thermally-grown silicon dioxide layer, forming an amorphous silicon film on the... | 04/19/2011 |
| 7927935 | Method for crystallizing semiconductor with laser beams Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to crystallize the amorphous semiconductor. A difference in diverging angles betwe... | 04/19/2011 |
| 7923316 | Method of forming a polysilicon film and method of manufacturing a thin film transistor including a polysilicon film In a method of forming a polysilicon film, a thin film transistor including a polysilicon film, and a method of manufacturing a thin film transistor including a polysilicon film, the thin film transistor includes a substrate, a first heat conduction film on the subs... | 04/12/2011 |
| 7923317 | Crystallization method To crystallize a material, a thin layer of amorphous or polycrystalline material is deposited on at least one area of the surface of a top part of a substrate. A metal layer is then deposited on at least one area of the thin layer. Thermal treatment is then performe... | 04/12/2011 |
| 7919366 | Laser crystallization method for amorphous semiconductor thin film A laser crystallization method in which an amorphous silicon thin film 2 formed on a substrate 1 is irradiated with a laser beam, the method including the steps of providing the amorphous silicon thin film 2 with an absorbent to form an absorben... | 04/05/2011 |
| 7915103 | Method for fabricating a flat panel display The method for fabricating a flat panel display includes performing a first crystallization process to re-crystallize an amorphous silicon layer on a glass substrate to make the amorphous silicon layer become a polysilicon layer, forming a patterned absorbing layer ... | 03/29/2011 |
| 7910416 | Laser irradiation apparatus In annealing of a non-single crystal silicon film by a linear laser beam, it is performed so as irradiation tracks caused by the linear laser beam do not remain in the silicon film. Laser light is partitioned by an integrally formed cylindrical array lens, and is co... | 03/22/2011 |
| 7906382 | Method of crystallizing amorphous semiconductor thin film and method of fabricating poly-crystalline thin film transistor using the same A method of crystallizing an amorphous semiconductor thin film formed on a substrate is provided. The method includes the steps of: forming a gate insulation film and a gate electrode on an amorphous semiconductor thin film; locally forming first and second crystall... | 03/15/2011 |
| 7902009 | Graded high germanium compound films for strained semiconductor devices Embodiments of an apparatus and methods for providing a graded high germanium compound region are generally described herein. Other embodiments may be described and claimed. ... | 03/08/2011 |
| 7902008 | Methods for fabricating a stressed MOS device A method for fabricating a stressed MOS device in and on a semiconductor substrate is provided. The method comprises the steps of forming a gate electrode overlying the semiconductor substrate and etching a first trench and a second trench in the semiconductor subst... | 03/08/2011 |
| 7902010 | Mask for sequential lateral solidification (SLS) process and a method for crystallizing amorphous silicon by using the same A mask for sequential lateral solidification (SLS) processes including at least one first window, one second window, one third window, and one fourth window is provided. Each window has a length extending longitude on the mask. The second window is aligned to the fi... | 03/08/2011 |
| 7879664 | Liquid crystal display device having drive circuit A fabricating method of an array substrate for a liquid crystal display device including forming a polycrystalline silicon film on a substrate having a display region and a peripheral region, the polycrystalline silicon film having grains of square shape, forming a ... | 02/01/2011 |
| 7842565 | Beam homogenizer and laser irradiation apparatus The present invention provides a beam homogenizer for homogenizing energy distribution by making the distance between lenses small to shorten the optical path length with the use of an array lens of an optical path shortened type, and a laser irradiation apparatus u... | 11/30/2010 |
| 7842564 | Semiconductor memory device manufacturing method and semiconductor memory device In a method of manufacturing a semiconductor memory device, an opening is made in a part of an insulating film formed on a silicon substrate. An amorphous silicon thin film is formed on the insulating film in which the opening has been made and inside the opening. T... | 11/30/2010 |
| 7838352 | Thin film transistor and method for fabricating the same A thin film transistor that has improved characteristics and uniformity is developed by uniformly controlling low concentration of crystallization catalyst and controlling crystallization position so that no seed exists and no grain boundary exists, or one grain bou... | 11/23/2010 |
| 7833851 | Semiconductor device and manufacturing method thereof It is an object of the invention that, in semiconductor device, in order to promote the tendency of miniaturization of each display pixel pitch, which will be resulted in with the tendency toward the higher precision (increase of pixel number) and further miniaturiz... | 11/16/2010 |
| 7816195 | Semiconductor device and manufacturing method thereof A TFT having a high threshold voltage is connected to the source electrode of each TFT that constitutes a CMOS circuit. In another aspect, pixel thin-film transistors are constructed such that a thin-film transistor more distant from a gate line drive circuit has a ... | 10/19/2010 |
| 7816196 | Laser mask and crystallization method using the same An embodiment of a laser crystallization method includes providing a substrate on which an amorphous silicon thin film is deposited, positioning a laser mask over the substrate, the laser mask including a mask pattern that contains transmitting regions and a blockin... | 10/19/2010 |
| 7799625 | Organic electro-luminescent display and method of fabricating the same An organic electro-luminescent display and a method of fabricating the same include an organic light emitting diode, a driving transistor which drives the organic light emitting diode, and a switching transistor which controls an operation of the driving transistor,... | 09/21/2010 |
| 7790533 | Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device The present invention is to provide a technique that can increase productivity with high output power by combining a plurality of laser beams on an irradiation surface without any difficulties in optical alignment. According to this technique, laser beams having dif... | 09/07/2010 |
| 7790534 | Method to form low-defect polycrystalline semiconductor material for use in a transistor A method is described for forming a thin film transistor having its current-switching region in polycrystalline semiconductor material which has been crystallized in contact with titanium silicide, titanium silicide-germanide, or titanium germanide. The titanium sil... | 09/07/2010 |
| 7776669 | Thin film transistor and method of fabricating the same A thin film transistor includes a substrate; a semiconductor layer disposed on the substrate, and including polycrystalline silicon having a constant directivity and a uniformly distributed crystal grain boundary; a gate insulating layer; a gate electrode; an interl... | 08/17/2010 |
| 7776670 | Silicon thin-film and method of forming silicon thin-film Issue Providing a silicon film which can prevent damage of electronic devices formed on a substrate from occurrence, can prevent apparatus arrangement from becoming large-scale one, can improve coherency of a silicon thin film to a substrate, and is hardly happened ... | 08/17/2010 |
