Class 438/164 - Semiconductor islands formed upon insulating substrate or layer (e.g., mesa formation, etc.)

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Process wherein the semiconductor layer selectively deposited
No. of patents: 710
Last issue date: 03/27/2012

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Number	Title	Issue Date
8143117	Active device array substrate and method for fabricating the same A method for fabricating an active device array substrate is provided. A first patterned semiconductor layer, a gate insulator, a first patterned conductive layer and a first dielectric layer is sequentially formed on a substrate. First contact holes exposing the fi...	03/27/2012
8133774	SOI radio frequency switch with enhanced electrical isolation At least one conductive via structure is formed from an interconnect-level metal line through a middle-of-line (MOL) dielectric layer, a shallow trench isolation structure in a top semiconductor layer, and a buried insulator layer to a bottom semiconductor layer. Th...	03/13/2012
8110455	Semiconductor device and a method of manufacturing the same A method of manufacturing a semiconductor device (1200), the method comprising forming a sacrificial pattern having a recess on a substrate (402), filling the recess and covering the substrate and the sacrificial pattern with a semiconductor structure,...	02/07/2012
8101473	Rounded three-dimensional germanium active channel for transistors and sensors A process is provided for fabricating rounded three-dimensional germanium active channels for transistors and sensors. For forming sensors, the process comprises providing a crystalline silicon substrate; depositing an oxide mask on the crystalline silicon substrate...	01/24/2012
8084310	Self-aligned multi-patterning for advanced critical dimension contacts Embodiments of the present invention pertain to methods of forming patterned features on a substrate having a reduced pitch in two dimensions as compared to what is possible using standard photolithography processing techniques using a single high-resolution photoma...	12/27/2011
8062939	Semiconductor storage element and manufacturing method thereof A semiconductor storage element includes: a semiconductor layer constituted of a line pattern with a predetermined width formed on a substrate; a quantum dot forming an electric charge storage layer formed on the semiconductor layer through a first insulating film s...	11/22/2011
8048729	Method for manufacturing semiconductor device A highly responsive semiconductor device in which the subthreshold swing (S value) is small and reduction in on-current is suppressed is manufactured. A semiconductor layer in which a thickness of a source region or a drain region is larger than that of a channel fo...	11/01/2011
8048728	Display device, method for manufacturing display device, and SOI substrate A manufacturing method is provided which achieves an SOI substrate with a large area and can improve productivity of manufacture of a display device using the SOI substrate. A plurality of single-crystalline semiconductor layers are bonded to a substrate having an i...	11/01/2011
8039327	Transistor forming methods A transistor forming method includes forming a dielectric spacer in a trench surrounding an active area island, forming line openings through the spacer, and forming a gate line extending through the line openings, over opposing sidewalls, and over a top of the fin....	10/18/2011
8030147	Method for manufacturing thin film transistor and display device including the thin film transistor To provide a method for manufacturing a thin film transistor with excellent electric characteristics and high reliability and a display device including the thin film transistor. A gate insulating film is formed over a gate electrode, crystal nuclei is formed over t...	10/04/2011
8008140	Method for manufacturing semiconductor device including hat-shaped electrode It is an object of the present invention to manufacture a TFT having a small-sized LDD region in a process with a few processing step and to manufacture TFTs each having a structure depending on each circuit separately. According to the present invention, a gate ele...	08/30/2011
8008141	Method of fabricating a semiconductor device with multiple channels A semiconductor device with multiple channels includes a semiconductor substrate and a pair of conductive regions spaced apart from each other on the semiconductor substrate and having sidewalls that face to each other. A partial insulation layer is disposed on the ...	08/30/2011
7951659	Method for simultaneously tensile and compressive straining the channels of NMOS and PMOS transistors respectively A method of forming a microelectronic device comprising, on a same support: at least one semi-conductor zone strained according to a first strain, and at least one semi-conductor zone strained according to a second strain, different to the first strain, comprising: ...	05/31/2011
7939389	Semiconductor device and method for manufacturing the same A single crystal semiconductor substrate including an embrittlement layer is attached to a base substrate with an insulating layer interposed therebetween, and the single crystal semiconductor layer is separated at the embrittlement layer by heat treatment; accordin...	05/10/2011
7910415	Semiconductor device and method of manufacturing the same, and semiconductor substrate and method of manufacturing the same A method of manufacturing a semiconductor device including a substrate; an insulating film formed thereon; a first semiconductor layer where strain is induced in the directions parallel to the surface of the substrate, the first semiconductor layer being on the insu...	03/22/2011
7906381	Method for integrating silicon-on-nothing devices with standard CMOS devices A method is provided for fabricating transistors of first and second types in a single substrate. First and second active zones of the substrate are delimited by lateral isolation trench regions, and a portion of the second active zone is removed so that the second ...	03/15/2011
7902007	Semiconductor substrates and manufacturing methods of the same Semiconductor substrates and methods of manufacturing the same are provided. The semiconductor substrates include a substrate region, an insulation region and a floating body region. The insulation region is disposed on the substrate region. The floating body region...	03/08/2011
7892901	Strained silicon-on-insulator transistors with mesa isolation A silicon-on-insulator semiconductor device which includes a substrate; an insulator layer overlying the substrate; a plurality of strained silicon islands overlying the insulator layer, the strained silicon islands are isolated from each other by mesa isolation; an...	02/22/2011
7879663	Trench formation in a semiconductor material A semiconductor device is formed on a semiconductor layer. A gate dielectric layer is formed over the semiconductor layer. A layer of gate material is formed over the gate dielectric layer. The layer of gate material is patterned to form a gate structure. Using the ...	02/01/2011
7875510	Thin-film device, method for manufacturing the same, and electronic apparatus A method for manufacturing a thin-film device includes forming a separation layer on a substrate, forming a support layer of mainly clay containing silicate mineral having a layered crystal structure on the separation layer, forming a thin-film functional member on ...	01/25/2011
7871873	Method of forming fin structures using a sacrificial etch stop layer on bulk semiconductor material A method of manufacturing semiconductor fins for a semiconductor device may begin by providing a bulk semiconductor substrate. The method continues by growing a layer of first epitaxial semiconductor material on the bulk semiconductor substrate, and by growing a lay...	01/18/2011
7851283	Field effect transistor with raised source/drain fin straps Therefore, disclosed above are embodiments of a multi-fin field effect transistor structure (e.g., a multi-fin dual-gate FET or tri-gate FET) that provides low resistance strapping of the source/drain regions of the fins, while also maintaining low capacitance to th...	12/14/2010
7816194	Method of manufacturing thin film transistor A method of manufacturing thin film transistor is provided, in which the method of manufacturing includes a new etching process of island semiconductor. The new etching process of island semiconductor is controlled by a flow rate of etching gas and a regulation of e...	10/19/2010
7811871	Low-capacitance contact for long gate-length devices with small contacted pitch Disclosed are planar and non-planar field effect transistor (FET) structures and methods of forming the structures. The structures comprise segmented active devices (e.g., multiple semiconductor fins for a non-planar transistor or multiple semiconductor layer sectio...	10/12/2010
7807520	Method for manufacturing semiconductor device To provide a method for manufacturing a large semiconductor device which easily operates normally and has excellent current characteristics. A first single-crystal semiconductor layer is provided over an insulating substrate. Then, the first single-crystal semicondu...	10/05/2010
7803674	Methods for fabricating SOI devices Silicon on insulator (SOI) devices and methods for fabricating the same are provided. An exemplary embodiment of a SOI device comprises a substrate. A first insulating layer is formed over the substrate. A plurality of semiconductor islands is formed over the first ...	09/28/2010
7799624	Method of forming a thin film component Embodiments of methods, apparatuses, devices, and/or systems for forming a thin film component are described. ...	09/21/2010
7781275	Method of manufacturing a flash memory device A method of manufacturing a flash memory device is disclosed. The method includes the steps of providing a semiconductor substrate in which a cell region and a select transistor region are defined, etching the semiconductor substrate in the select transistor region ...	08/24/2010
7772053	Method for fabrication of semiconductor device After forming a source-drain material film on an insulator layer, an opening portion reaching the insulator layer is formed in the source-drain material film. Then, a channel having desired thickness and a gate insulator are sequentially formed on the insulator laye...	08/10/2010
7736959	Integrated circuit device, and method of fabricating same There are many inventions described and illustrated herein. In a first aspect, the present invention is directed to integrated circuit device including SOI logic transistors and SOI memory transistors, and method for fabricating such a device. In one embodiment, int...	06/15/2010
7727826	Method for manufacturing a semiconductor device Disclosed herein is a method for manufacturing a semiconductor device that includes forming a gate pattern on a substrate having a stacked structure including a lower silicon layer, an insulating layer, and an upper silicon layer. The method further includes forming...	06/01/2010
7723167	Process and system for laser annealing and laser-annealed semiconductor film In a laser annealing process: a bandlike area of a nonmonocrystalline semiconductor film is scanned and irradiated with continuous-wave laser light so as to produced fused regions in the first to third sections of the bandlike area as follows, where the third sectio...	05/25/2010
7709307	Printed non-volatile memory A nonvolatile memory cell is disclosed, having first and second semiconductor islands at the same horizontal level and spaced a predetermined distance apart, the first semiconductor island providing a control gate and the second semiconductor island providing source...	05/04/2010
7709308	Semiconductor devices and methods of fabricating the same including forming a fin with first and second gates on the sidewalls Disclosed is a semiconductor device and method of fabricating the same. The device is disposed on a substrate, including a fin constructed with first and second sidewalls, a first gate line formed in the pattern of spacer on the first sidewall of the fin, and a seco...	05/04/2010
7638376	Method for forming SOI device A method for forming a substrate contact on a silicon-on-insulator (SOI) wafer is provided that can be integrated with a process for fabricating SOI devices without additional processing after wafer dicing. The method is applicable in many of the more advanced packa...	12/29/2009
7622337	Method for fabricating a transistor using a SOI wafer Embodiments relate to a method for fabricating a transistor by using a SOI wafer. A gate insulation layer and a first gate conductive layer on a silicon-on-insulator substrate of a substrate to form a first gate conductive pattern, a gate insulation layer pattern, a...	11/24/2009
7608495	Transistor forming methods A transistor forming method includes forming a dielectric spacer in a trench surrounding an active area island, forming line openings through the spacer, and forming a gate line extending through the line openings, over opposing sidewalls, and over a top of the fin....	10/27/2009
7585714	Method for manufacturing semiconductor device, semiconductor device, and laser irradiation apparatus It is an object of the present invention to provide a laser irradiation apparatus being able to crystallize the semiconductor film homogeneously while suppressing the variation of the crystallinity in the semiconductor film and the unevenness of the state of the sur...	09/08/2009
7569438	Method of manufacturing semiconductor device A method of manufacturing a semiconductor device that includes the steps of forming an oxide film on a surface layer section, forming a window section by selectively removing the oxide film, forming a first semiconductor layer, forming a second semiconductor layer, ...	08/04/2009
7556992	Method for forming vertical structures in a semiconductor device A method is provided for making a semiconductor device, comprising (a) providing a semiconductor stack comprising a first semiconductor layer (407) having a crystallographic orientation and a second semiconductor layer (405) having a crysta...	07/07/2009

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Class 438/164 - Semiconductor islands formed upon insulating substrate or layer (e.g., mesa formation, etc.)