Did You Know...
...that the video game, Pong, was invented by a guy who graduated at the bottom of his engineering class? Nolan Bushnell spent more time running the games at a local amusement park than he did on his studies at the University of Utah. His dreams of working for Disney's amusement empire were dashed when the company wouldn't hire him. Taking a boring job, Nolan daydreamed about electronic versions of popular games. He invented Pong, the first video game, and went on to found Atari Co.
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| Number | Title | Issue Date |
| 8153484 | Metal-oxide-semiconductor device having trenched diffusion region and method of forming same An MOS device includes a semiconductor layer of a first conductivity type and first and second source/drain regions of a second conductivity type formed in the semiconductor layer proximate an upper surface of the semiconductor layer. The first and second source/dra... | 04/10/2012 |
| 8110454 | Methods of forming drain extended transistors A transistor comprises a source region of a first conductivity type and electrically communicating with a first semiconductor region. The transistor also comprises a drain region of the first conductivity type and electrically communicating with a second semiconduct... | 02/07/2012 |
| 8101472 | Method for manufacturing TFT substrate A method for manufacturing a TFT substrate in which a channel length can be stably formed while the number of masks is reduced. The method includes processing a gate of the n-type TFT, a gate of the p-type TFT, and an upper capacitor electrode by using a half-tone m... | 01/24/2012 |
| 8084309 | Extremely thin silicon on insulator (ETSOI) complementary metal oxide semiconductor (CMOS) with in-situ doped source and drain regions formed by a single mask A method of fabricating an electronic structure is provided that includes forming a first conductivity doped first semiconductor material on the SOI semiconductor layer of a substrate. The SOI semiconductor layer has a thickness of less than 10 nm. The first conduct... | 12/27/2011 |
| 7972912 | Method of fabricating semiconductor device A method of fabricating a semiconductor device includes first providing an insulation substrate. A patterned conductive layer is formed over the insulation substrate, and the patterned conductive layer includes a channel region and a number of protruding regions. A ... | 07/05/2011 |
| 7964455 | Manufacturing method of semiconductor device The method includes the steps of forming a gate insulating film over a first conductivity-type layer surface of a semiconductor substrate, implanting a second conductivity-type impurity into the first conductivity-type layer located on both sides adjacent to a condu... | 06/21/2011 |
| 7897445 | Fabrication methods for self-aligned LDD thin-film transistor A self-aligned LDD TFT and a fabrication method thereof. The method includes providing a semiconductor layer. A first masking layer is provided over a first region of the semiconductor layer, said first masking layer comprising a material that provide a permeable ba... | 03/01/2011 |
| 7883946 | Angled implantation for deep submicron device optimization A method for forming a submicron device includes depositing a hard mask over a first region that includes a polysilicon well of a first dopant type and a gate of a second dopant type and a second region that includes a polysilicon well of a second dopant type and a ... | 02/08/2011 |
| 7871872 | Method of manufacturing thin film transistor having lightly doped drain regions Provided is a method of manufacturing a thin film transistor, the method comprising: forming an amorphous silicon layer on a substrate; forming a polysilicon layer by crystallizing the amorphous silicon layer; forming a mask structure that masks a portion of the pol... | 01/18/2011 |
| 7851282 | Method for forming thin film devices for flat panel displays Methods of forming thin film devices with different electrical characteristics on a substrate comprising a driver circuit region and a pixel region. A first and a second polysilicon pattern layers are formed on the driving circuit region and the pixel region of the ... | 12/14/2010 |
| 7842563 | Thin film transistor, method of fabricating the same, and flat panel display using thin film transistor A thin film transistor may include an active layer formed on an insulating substrate and formed with source/drain regions and a channel region; a gate insulating film formed on the active layer; and a gate electrode formed on the gate insulating film. The gate elect... | 11/30/2010 |
| 7696029 | Method for forming thin film devices for flat panel displays Methods of forming thin film devices with different electrical characteristics on a substrate comprising a driver circuit region and a pixel region. A first and a second polysilicon pattern layers are formed on the driving circuit region and the pixel region of the ... | 04/13/2010 |
| 7691691 | Semiconductor device and methods for making the same Thin film transistors (TFT) and methods for making same. The TFTs generally comprise: (a) a semiconductor layer comprising source and drain terminals and a channel region therebetween; (b) a gate electrode comprising a gate and a gate dielectric layer between the ga... | 04/06/2010 |
| 7678627 | Process for producing thin film transistor having LDD region In a process for producing a TFT display, a polysilicon layer is patterned to define a first and a second TFT regions. A first doping material is implanted into a first exposed portion in the first TFT region to define a first doped region and a first channel region... | 03/16/2010 |
| 7645651 | LDMOS with channel stress A method of forming a metal oxide semiconductor (MOS) device comprises defining an active area in an unstrained semiconductor layer structure, depositing a hard mask overlying the active area and a region outside of the active area, patterning the hard mask to expos... | 01/12/2010 |
| 7547592 | PMOS depletable drain extension made from NMOS dual depletable drain extensions In accordance with an embodiment of the invention, there is an integrated circuit device having a complementary integrated circuit structure comprising a first MOS device. The first MOS device comprises a source doped to a first conductivity type, a drain extension ... | 06/16/2009 |
| 7537983 | MOSFET In various aspects, a MOSFET may include an active region of a first conductivity type provided on an insulating layer, the active region having a first portion and a second portion, the first portion being thicker than the second portion; a base region of the first... | 05/26/2009 |
| 7534667 | Structure and method for fabrication of deep junction silicon-on-insulator transistors A structure and method for fabricating a transistor structure is provided. The method comprises the steps of: (a) providing a substrate including a semiconductor-on-insulator (“SOI”) layer separated from a bulk region of the substrate by a buried dielectric laye... | 05/19/2009 |
| 7491591 | Thin film transistor having LDD structure A thin film transistor having a LDD structure that may improve its channel reliability and output characteristics. A semiconductor layer comprises source/drain regions, a channel region positioned between the source/drain regions, and an LDD region positioned betwee... | 02/17/2009 |
| 7435671 | Trilayer resist scheme for gate etching applications A trilayer resist (TLR) patterning scheme is provided to enable gate conductors, particularly polySi gate conductors, with critical dimensions (CDs) of less than 40 nm and minimal LER and LWR. In accordance with the present invention, the inventive patterning scheme... | 10/14/2008 |
| 7432138 | Thin film transistor substrate and manufacturing method for the same A thin film transistor substrate is provided whose structure allows for the formation of (i) a thick gate insulating film, (ii) a high pressure resistance TFT having a LDD region of a GOLD structure, and (iii) a low voltage TFT having a thin gate insulating film, wi... | 10/07/2008 |
| 7432144 | Method for forming a transistor for reducing a channel length A method of forming a transistor including: forming a gate oxide layer pattern and gate polysilicon layer pattern on a silicon substrate; forming a low energy ion implantation region aligned with both sidewalls of the gate polysilicon layer pattern; forming an amorp... | 10/07/2008 |
| 7425477 | Manufacturing method of thin film transistor including implanting ions through polysilicon island and into underlying buffer layer A manufacturing method of a thin film transistor is provided. A buffer layer is formed on a substrate, and then a first and a second poly-silicon island are formed thereon. A gate-insulating layer is formed on the substrate, and a first and a second gate are formed ... | 09/16/2008 |
| 7419858 | Recessed-gate thin-film transistor with self-aligned lightly doped drain A recessed-gate thin-film transistor (RG-TFT) with a self-aligned lightly doped drain (LDD) is provided, along with a corresponding fabrication method. The method deposits an insulator overlying a substrate and etches a trench in the insulator. The trench has a bott... | 09/02/2008 |
| 7416927 | Method for producing an SOI field effect transistor Method for producing a first SOI field effect transistor with predetermined transistor properties by forming a laterally delimited layer sequence with a gate-insulating layer and a gate region on an undoped substrate, forming a spacer layer having a predetermined th... | 08/26/2008 |
| 7410846 | Method for reduced N+ diffusion in strained Si on SiGe substrate The first source and drain regions are formed in an upper surface of a SiGe substrate. The first source and drain regions containing an N type impurity. Vacancy concentration in the first source and drain regions are reduced in order to reduce diffusion of the N typ... | 08/12/2008 |
| 7410818 | Thin film transistor, liquid crystal display using thin film transistor, and method of manufacturing thin film transistor A semiconductor film, which is located over a gate electrode for forming a channel region between a source electrode and a drain electrode, has a width greater than a width of the source electrode and a width of the drain electrode located over the gate electrode. I... | 08/12/2008 |
| 7410847 | Semiconductor device having semiconductor circuit formed by semiconductor elements and method for manufacturing the same There is provided a semiconductor device including a semiconductor circuit formed by semiconductor elements having an LDD structure which has high reproducibility, improves the stability of TFTs and provides high productivity and a method for manufacturing the same.... | 08/12/2008 |
| 7387921 | Method of manufacturing semiconductor device Disclosed is a method of manufacturing a semiconductor device, comprising forming a gate electrode on a main surface of a semiconductor substrate via a gate insulating film, laminating sequentially a first insulating film with oxidation resistance and a silicon film... | 06/17/2008 |
| 7387920 | Method of manufacturing thin film transistor array panel A method of manufacturing a thin film transistor array panel is provided, which includes forming a semiconductor layer of poly silicon, forming a gate insulating layer on the semiconductor layer, forming a conductive layer including a first metal layer and a second ... | 06/17/2008 |
| 7381599 | Semiconductor device and method for manufacturing the same A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher... | 06/03/2008 |
| 7374983 | Semiconductor device and manufacturing method thereof Manufacture of TFTs corresponding to various circuits makes structures thereof complex, which involves a larger number of manufacturing steps. Such an increase in the number of the manufacturing steps leads to a higher manufacturing cost and a lower manufacturing yi... | 05/20/2008 |
| 7372105 | Semiconductor device with power supply impurity region A semiconductor device in which by fixing a well at a predetermined potential via a contact within a memory cell, latch-up immunity is improved without accompanying increase in the area of the memory cell, and of which manufacture is facilitated, and a manufacturing... | 05/13/2008 |
| 7371624 | Method of manufacturing thin film semiconductor device, thin film semiconductor device, electro-optical device, and electronic apparatus A method of manufacturing a thin film semiconductor device which includes a thin film transistor having a first semiconductor layer, a gate insulating layer, and a gate electrode which are laminated in this order on a substrate, and a capacitive element having a low... | 05/13/2008 |
| 7371623 | Semiconductor device with semiconductor circuit comprising semiconductor units, and method for fabricating it The invention is to provide a high-productivity method for fabricating a TFT device having different LDD structures on one and the same substrate, and the TFT device. Specifically, the invention provides a novel TFT structure, and a high-productivity method for fabr... | 05/13/2008 |
| 7362784 | Laser irradiation method, laser irradiation apparatus, and semiconductor device An object of the present invention is obtaining a semiconductor film with uniform characteristics by improving irradiation variations of the semiconductor film. The irradiation variations are generated due to scanning while irradiating with a linear laser beam of th... | 04/22/2008 |
| 7359010 | Method for producing display device In a liquid crystal display device, a first substrate includes electrical wirings and a semiconductor integrated circuit which has TFTs and is connected electrically to the electrical wirings, and a second substrate includes a transparent conductive film on a surfac... | 04/15/2008 |
| 7348971 | Active matrix panel In an active matrix panel, a pixel matrix which includes a plurality of gate lines, a plurality of source lines, and thin film transistors is formed on a first transparent substrate. A second transparent substrate is formed opposite to the first transparent substrat... | 03/25/2008 |
| 7348599 | Semiconductor device and manufacturing method thereof A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, a GOLD structure or an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel portion is connected to the pixel TFT through a hole bored in at l... | 03/25/2008 |
| 7348247 | Semiconductor devices and methods of manufacturing the same Semiconductor devices and methods of manufacturing the same are disclosed. A disclosed semiconductor device comprises a semiconductor substrate; a gate formed on the semiconductor substrate; a gate oxide layer interposed between the semiconductor substrate and the g... | 03/25/2008 |
