Did You Know...
...that while attempting to develop a super strong glue, 3M employee Spencer Silver accidentally developed a glue that was so weak it would barely hold two pieces of paper together? However, his colleague Art Fry needed the glue. Fry sang with his church choir and marked the pages of his hymnal with small scraps of paper that often fell out. He used Silver's glue to hold the papers in place. Today we call this invention Post-it Notes.
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| Number | Title | Issue Date |
| 8076186 | Method of laser annealing semiconductor layer and semiconductor devices produced thereby A laser annealing method includes forming a nitrogen-doped layer on a semiconductor layer, the nitrogen-doped layer having a nitrogen concentration of at least 3×1020 atoms/cc, irradiating a first area of the nitrogen-doped layer in a low oxygen environm... | 12/13/2011 |
| 8058117 | Method of synthesizing silicon wires A method of synthesizing silicon wires is provided. A substrate is provided. A copper catalyst particle layer is formed on a top surface of the substrate. The reactive device is heated at a temperature of above 450° C. in a flowing protective gas. A mixture of a pr... | 11/15/2011 |
| 8030146 | Organic light emitting diode (OLED) display panel and method of forming polysilicon channel layer thereof An organic light emitting diode (OLED) display panel and a method of forming a polysilicon channel layer thereof are provided. In the method, firstly, a substrate having a polysilicon layer disposed thereon is provided. Then, a dopant atom not selected from the IIIA... | 10/04/2011 |
| 7972911 | Method for forming metallic materials comprising semi-conductors The method for forming first and second metal-based materials comprises providing a substrate comprising an area made from a first semi-conductor material and an area made from a second semi-conductor material comprising germanium separated by a pattern made from di... | 07/05/2011 |
| 7943446 | Method of producing semiconductor device and semiconductor device A semiconductor device able to secure electrical effective thicknesses required for insulating films of electronic circuit elements by using depletion of electrodes of the electronic circuit elements even if the physical thicknesses of the insulating films are not d... | 05/17/2011 |
| 7939388 | Plasma doping method and plasma doping apparatus Before a plasma doping process is performed, there is generated a plasma of a gas containing an element belonging to the same group in the periodic table as the primary element of a silicon substrate 9, e.g., a monosilane gas, in a vacuum chamber 1. Th... | 05/10/2011 |
| 7927934 | SOI semiconductor device with body contact and method thereof A method including providing a substrate and providing an insulating layer overlying the substrate is provided. The method further includes providing a body region comprising a body material overlying the insulating layer. The method further includes forming at leas... | 04/19/2011 |
| 7897444 | Strained semiconductor-on-insulator (sSOI) by a simox method A strained (tensile or compressive) semiconductor-on-insulator material is provided in which a single semiconductor wafer and a separation by ion implantation of oxygen process are used. The separation by ion implantation of oxygen process, which includes oxygen ion... | 03/01/2011 |
| 7897443 | Production method of semiconductor device and semiconductor device The present invention provides a production method of a semiconductor device, which can improve characteristics of a semiconductor element including a single crystal semiconductor layer formed by transferring on an insulating substrate. The present invention is a pr... | 03/01/2011 |
| 7863119 | Semiconductor device and method for manufacturing the same It is made possible to provide a method for manufacturing a semiconductor device that has a high-quality insulating film in which defects are not easily formed, and experiences less leakage current. A method for manufacturing a semiconductor device, includes: formin... | 01/04/2011 |
| 7662680 | Method of producing a semiconductor element in a substrate and a semiconductor element A method of producing a semiconductor element in a substrate includes forming a plurality of micro-cavities and carbide precipitates in the substrate, creating an amorphization of the substrate to form crystallographic defects and a doping of the substrate with dopi... | 02/16/2010 |
| 7605029 | Method of manufacturing semiconductor device According to the present invention, an impurity region, to which a rare gas element (also called a rare gas) and one kind or a plurality of kinds of elements selected from the group consisting of H, H2, O, O2, and P are added, are formed in a s... | 10/20/2009 |
| 7566601 | Method of making a one transistor SOI non-volatile random access memory cell One aspect of the present subject matter relates to a memory cell, or more specifically, to a one-transistor SOI non-volatile memory cell. In various embodiments, the memory cell includes a substrate, a buried insulator layer formed on the substrate, and a transisto... | 07/28/2009 |
| 7563658 | Method for manufacturing semiconductor device The present invention relates to a method for manufacturing a semiconductor film, including the steps of forming a transparent conductive film, forming a first conductive film over the transparent conductive film, forming a second conductive film over the first cond... | 07/21/2009 |
| 7544549 | Method for manufacturing semiconductor device and MOS field effect transistor Upon manufacture of a semiconductor device provided with a source region and a drain region formed by activating, through anneal, an n-type first dopant ion-implanted in a p-type device forming area provided in a semiconductor layer formed on an insulator, and a bod... | 06/09/2009 |
| 7482211 | Junction leakage reduction in SiGe process by implantation A method for forming a semiconductor device is provided. The method includes providing a semiconductor substrate, forming a gate dielectric over the semiconductor substrate, forming a gate electrode on the gate dielectric, forming a stressor in the semiconductor sub... | 01/27/2009 |
| 7442592 | Manufacturing a semiconductor device A technique of reducing fluctuation between elements is provided in which a semiconductor film having a crystal structure is obtained by using a metal element that accelerates crystallization of a semiconductor film and then the metal element remaining in the film i... | 10/28/2008 |
| 7442600 | Methods of forming threshold voltage implant regions The invention includes methods of forming channel region implants for two transistor devices simultaneously, in which a mask is utilized to block a larger percentage of a channel region location of one of the devices relative to the other. The invention also pertain... | 10/28/2008 |
| 7439092 | Thin film splitting method A method of fabricating thin films of semiconductor materials by implanting ions in a substrate composed of at least two different elements at least one of which can form a gaseous phase on bonding with itself and/or with impurities includes the following steps: | 10/21/2008 |
| 7435635 | Method for crystallizing semiconductor material A semiconductor material and a method for forming the same, said semiconductor material having produced by a process comprising melting a noncrystal semiconductor film containing therein carbon, nitrogen, and oxygen each at a concentration of 5×1019 atom... | 10/14/2008 |
| 7432139 | Methods for forming dielectrics and metal electrodes A method for forming a semiconductor structure, the method including forming in a processing chamber a dielectric layer over a substrate; and subsequently forming, in the same processing chamber and without removing the substrate therefrom, an electrode layer direct... | 10/07/2008 |
| 7371619 | Semiconductor device and method of manufacturing the same In order to obtain a thin-film transistor having high characteristics using a metal element for accelerating the crystallization of silicon, a nickel element is selectively added to the surface of an amorphous silicon film (103) in regions (101) and ( | 05/13/2008 |
| 7371647 | Methods of forming transistors The invention encompasses a method of forming a structure over a semiconductor substrate. A silicon dioxide containing layer is formed across at least some of the substrate. Nitrogen is formed within the silicon dioxide containing layer. Substantially all of the nit... | 05/13/2008 |
| 7371624 | Method of manufacturing thin film semiconductor device, thin film semiconductor device, electro-optical device, and electronic apparatus A method of manufacturing a thin film semiconductor device which includes a thin film transistor having a first semiconductor layer, a gate insulating layer, and a gate electrode which are laminated in this order on a substrate, and a capacitive element having a low... | 05/13/2008 |
| 7371623 | Semiconductor device with semiconductor circuit comprising semiconductor units, and method for fabricating it The invention is to provide a high-productivity method for fabricating a TFT device having different LDD structures on one and the same substrate, and the TFT device. Specifically, the invention provides a novel TFT structure, and a high-productivity method for fabr... | 05/13/2008 |
| 7368751 | Method of manufacturing an electronic device comprising a thin film transistor A method of manufacturing an electronic device comprising a thin film transistor (42), comprises forming a hydrogen-containing layer (22) over a semiconductor layer (10;20), irradiating the hydrogen-containing layer so as to hydrogenate the semi... | 05/06/2008 |
| 7358161 | Methods of forming transistor devices associated with semiconductor-on-insulator constructions The invention encompasses a method of forming a semiconductor on-insulator construction. A substrate is provided. The substrate includes a semiconductor-containing layer over an insulative mass. The insulative mass comprises silicon dioxide. A band of material is fo... | 04/15/2008 |
| 7358163 | Semiconductor device and method for fabricating the same A novel and very useful method for forming a crystal silicon film by introducing a metal element which promotes crystallization of silicon to an amorphous silicon film and for eliminating or reducing the metal element existing within the crystal silicon film thus ob... | 04/15/2008 |
| 7359010 | Method for producing display device In a liquid crystal display device, a first substrate includes electrical wirings and a semiconductor integrated circuit which has TFTs and is connected electrically to the electrical wirings, and a second substrate includes a transparent conductive film on a surfac... | 04/15/2008 |
| 7351622 | Methods of forming semiconductor device A method of forming a semiconductor device includes forming a three-dimensional structure formed of a semiconductor on a semiconductor substrate, and isotropically doping the three-dimensional structure by performing a plasma doping process using a first source gas ... | 04/01/2008 |
| 7351619 | Process of fabricating a semiconductor device A semiconductor device having high operating performance and reliability is disclosed, and its fabrication process is also disclosed. In an n-channel type TFT 302, an Lov region 207 is disposed, whereby a TFT structure highly resistant to hot ca... | 04/01/2008 |
| 7348222 | Method for manufacturing a thin film transistor and method for manufacturing a semiconductor device It is an object of the present invention to provide a method for removing the metal element from the semiconductor film which is different from the conventional gettering step for removing the metal element from the semiconductor film. In the present inventio... | 03/25/2008 |
| 7338845 | Fabrication method of a low-temperature polysilicon thin film transistor An LTPS-TFT structure comprises a gate, a gate dielectric layer, a patterned silicon layer, a patterned insulating layer, an ohmic contact layer and a source/drain layer. The gate and the gate dielectric layer are disposed on the substrate. The patterned silicon lay... | 03/04/2008 |
| 7338882 | Method of fabricating nano SOI wafer and nano SOI wafer fabricated by the same A method of fabricating a nano silicon on insulator (SOI) wafer having an excellent thickness evenness without performing a chemical mechanical polishing (CMP) and a wafer fabricated by the same are provided. The provided method includes preparing a bond wafer and a... | 03/04/2008 |
| 7335568 | Method of forming doped regions in the bulk substrate of an SOI substrate to control the operational characteristics of transistors formed thereabove, and an integrated circuit device comprising same In one illustrative embodiment, the method comprises providing an SOI substrate comprised of an active layer, a buried insulation layer and a bulk substrate, forming a doped region in the bulk substrate under the active layer, forming a plurality of transistors abov... | 02/26/2008 |
| 7332443 | Method for fabricating a semiconductor device The present invention relates to a method for fabricating a semiconductor device. In order to provide for a high carrier mobility in an active region of the device, germanium atoms are implanted into a surface of a semiconductor substrate such that a germanium-conta... | 02/19/2008 |
| 7330168 | Display device A source of a driving transistor for driving an organic EL element functions as a first capacitance electrode layer. A second capacitance electrode layer is formed on the source through a gate insulating film of the driving transistor. The second capacitance electro... | 02/12/2008 |
| 7320921 | Smart grading implant with diffusion retarding implant for making integrated circuit chips A method of making an integrated circuit chip is provided, which combines a smart grading implant with a diffusion retarding implant, e.g., to improve short channel effect controllability and improve dopant grading in the source/drain regions. Using a smart grading ... | 01/22/2008 |
| 7312125 | Fully depleted strained semiconductor on insulator transistor and method of making the same An integrated circuit includes multiple layers. A semiconductor-on-insulator (SOI) wafer can be used to house transistors. Two substrates or wafers can be bonded to form the multiple layers. A strained semiconductor layer can be between a silicon germanium layer and... | 12/25/2007 |
| 7300829 | Low temperature process for TFT fabrication Method of fabricating a thin-film transistor (TFT) in which a gate metal is deposited onto a substrate in order to form the gate of the thin-film transistor. The substrate may be an insulative substrate or a color filter. In a first method, the gate metal is subject... | 11/27/2007 |
