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| Number | Title | Issue Date |
| 7875509 | Manufacturing method of semiconductor apparatus and semiconductor apparatus, power converter using the same In a manufacturing method of a SOI type high withstand voltage semiconductor device formed on a support substrate via an insulation film, a small-sized semiconductor device having small dispersion of withstand voltage is manufactured by introducing impurities into t... | 01/25/2011 |
| 7776668 | Stripper solution and method for manufacturing liquid crystal display using the same A method for manufacturing a liquid crystal display includes simultaneously forming a gate electrode and a gate bus line on a transparent dielectric substrate, simultaneously forming a channel layer, an ohmic contact layer, and source/drain electrodes by forming a g... | 08/17/2010 |
| 7674662 | Process for making thin film field effect transistors using zinc oxide The present invention comprises a method of forming a zinc oxide based thin film transistor by blanket depositing the zinc oxide layer and the source-drain metal layer and then wet etching through the zinc oxide while etching through the source-drain electrode layer... | 03/09/2010 |
| 7588975 | Method of manufacturing pixel structure A method of manufacturing a pixel structure controlled by a data line and a scan line is provided. A gate electrode electrically coupled to the scan line is formed on a substrate and a first dielectric layer covering the scan line and the gate electrode is formed. A... | 09/15/2009 |
| 7488632 | Thin film transistor substrate for display device and fabricating method thereof A thin film transistor (TFT) substrate is fabricated in three mask processes. In a first mask process, a gate line and a gate electrode are formed. In a second mask process, a data line, a source electrode, a drain electrode, a semiconductor layer, and a first upper... | 02/10/2009 |
| 7459354 | Method for manufacturing a semiconductor device including top gate thin film transistor and method for manufacturing an active matrix device including top gate thin film transistor The crystallization method by laser light irradiation forms a multiplicity of convexes (ridges) in the surface of an obtained crystalline semiconductor film, deteriorating film quality. Therefore, it is a problem to provide a method for forming a ridge-reduced semic... | 12/02/2008 |
| 7413940 | Thin-film transistor and fabrication method thereof A fabrication method of a TFT includes successively forming four thin films containing a first conductive layer, an insulation layer, a semiconductor layer, and a second conductive layer on a substrate, performing a first PEP process to pattern the four thin films f... | 08/19/2008 |
| 7407846 | Thin film transistor, display device and their production The present method prevents malfunctions in switching caused by a light leakage current in an active matrix type thin film transistor substrate for a liquid crystal display and prevents display failures, by selectively disposing a self assembled monolayer film in a ... | 08/05/2008 |
| 7405113 | Fabrication method of thin film transistor A thin film transistor is provided, including a substrate, a gate, a first dielectric layer, a channel layer, a source/drain and a second dielectric layer. The gate is disposed on the substrate, and the gate and the substrate are covered with the first dielectric la... | 07/29/2008 |
| 7374982 | High voltage MOS transistor with gate extension A high voltage MOS transistor with a gate extension that has a reduced electric field in the drain region near the gate is provided. The high voltage MOS transistor includes a first and second gate layers, and a dielectric layer between the gate layers. The first an... | 05/20/2008 |
| 7364697 | System for infrared spectroscopic imaging of libraries Methods and apparatus for screening diverse arrays of materials using infrared imaging techniques are provided. Typically, each of the individual materials on the array will be screened or interrogated for the same material characteristic. Once screened, the individ... | 04/29/2008 |
| 7358122 | High performance FET devices and methods thereof Structure and methods of fabrication are disclosed for an enhanced FET devices in which dopant impurities are prevented from diffusing through the gate insulator. The structure comprises a Si:C, or SiGe:C, layer which is sandwiched between the gate insulator and a l... | 04/15/2008 |
| 7355225 | Semiconductor device and method for providing a reduced surface area electrode An apparatus (200) such as a semiconductor device comprises a gate electrode (201) and at least a first electrode (202). The first electrode preferably has an established perimeter that at least partially overlaps with respect to the gate electr... | 04/08/2008 |
| 7344928 | Patterned-print thin-film transistors with top gate geometry A self-aligned, thin-film, top-gate transistor and method of manufacturing same are disclosed. A first print-patterned mask is formed over a metal layer by digital lithography, for example by printing with a phase change material using a droplet ejector. The metal l... | 03/18/2008 |
| 7332385 | Method of manufacturing a semiconductor device that includes gettering regions A catalytic element is added to an amorphous semiconductor film and heat treatment is conducted therefor to produce a crystalline semiconductor film with good quality, a TFT (semiconductor device) with a satisfactory characteristic is realized using the crystalline ... | 02/19/2008 |
| 7312112 | Transistor array substrate fabrication for an LCD A fabrication process for transistor array substrates of different sizes on a common substrate provides quality control, yield, and space efficiency advantages. In particular, a four-mask process, including a mask with diffraction slits, may be employed to fabricate... | 12/25/2007 |
| 7300830 | Method of fabricating liquid crystal display panel A method of fabricating a liquid crystal display panel includes forming a first conductive layer on a substrate and patterning the first conductive layer using a first resist pattern printed on the first conductive layer to form a gate pattern. A semiconductor layer... | 11/27/2007 |
| 7291522 | Semiconductor devices and methods of making In one method of forming a semiconductor device, a first electrode is formed electrically coupled with a semiconductor material. After the first electrode is formed, an insulator is formed over the semiconductor material adjoining the first electrode and extending a... | 11/06/2007 |
| 7279711 | Ferroelectric liquid crystal and goggle type display devices The present invention relates to a semiconductor device including a circuit composed of thin film transistors having a novel GOLD (Gate-Overlapped LDD (Lightly Doped Drain)) structure. The thin film transistor comprises a first gate electrode and a second electrode ... | 10/09/2007 |
| 7259427 | Semiconductor device and method of manufacturing the same The present invention relates to a semiconductor device including a circuit composed of thin film transistors having a novel GOLD (Gate-Overlapped LDD (Lightly Doped Drain)) structure. The thin film transistor comprises a first gate electrode and a second electrode ... | 08/21/2007 |
| 7238556 | Thin film transistor structure and method of manufacturing the same The present invention improves the quality of the TFT structure by avoiding photo-induced current, and lowers manufacturing costs by decreasing the number of masks required in the process, wherein the former is achieved by the stacked structure including a gate laye... | 07/03/2007 |
| 7229862 | Method for manufacturing semiconductor device An object of the present invention is to provide a method for manufacturing a semiconductor device of which manufacturing process is simplified by improving usage rate of a material. A method for manufacturing a semiconductor device of the invention comprises the st... | 06/12/2007 |
| 7220612 | Liquid crystal display device and fabricating method thereof A thin film transistor substrate and a fabricating method thereof for simplifying a process are disclosed. In a liquid crystal display device according to the present invention, a gate line is provided on a substrate. A data line crosses the gate line with having a ... | 05/22/2007 |
| 7221495 | Thin film precursor stack for MEMS manufacturing This invention provides a precursor film stack for use in the production of MEMS devices. The precursor film stack comprises a carrier substrate, a first layer formed on the carrier substrate, a second layer of an insulator material formed on the first layer, and a ... | 05/22/2007 |
| 7205194 | Method of fabricating a flash memory cell A method of fabricating a flash memory cell having a split gate structure. A sacrificial layer is formed on a floating gate layer formed on a semiconductor substrate. The sacrificial layer is etched to form an opening exposing a portion of the floating gate layer. A... | 04/17/2007 |
| 7196352 | Pixel structure, and thin film transistor A method of fabricating a pixel structure is disclosed. A substrate having a color filter layer thereon and a leveling layer further covers the color filter layer is provided. A first metal layer is formed over the leveling layer. The first metal layer is patterned ... | 03/27/2007 |
| 7192814 | Method of forming a low capacitance semiconductor device and structure therefor In one embodiment a transistor is formed with a gate structure having an opening in the gate structure. An insulator is formed on at least sidewalls of the opening and a conductor is formed on the insulator. ... | 03/20/2007 |
| 7179697 | Method of fabricating an electronic device A method of fabricating an electronic device includes the following steps: a) providing a substrate; b) forming a first strip on the substrate; c) coating an insulation layer on the first strip and the substrate while completely overlaying the first strip and the su... | 02/20/2007 |
| 7176489 | Thin-film transistor and method of making same A thin-film transistor includes a substrate, and a gate including a double-layered structure having first and second metal layers provided on the substrate, the first metal layer being wider than the second metal layer by 1 to 4 μm. A method of making such a thin-f... | 02/13/2007 |
| 7173303 | FIN field effect transistor with self-aligned gate The present invention provides a process for fabricating a metal oxide semiconductor field effect transistor (MOSFET) having a double-gate and a double-channel wherein the gate region is self-aligned to the channel regions and the source/drain diffusion junctions. T... | 02/06/2007 |
| 7151015 | Semiconductor device and manufacturing method thereof There has been a problem that the manufacturing process is complicated and the number of processes is increased when a TFT with an LDD structure or a TFT with a GOLD structure is formed. In a method of manufacturing a semiconductor device, after low concentration im... | 12/19/2006 |
| 7138682 | Organic thin-film transistor and method of manufacturing the same A thin-film transistor includes a substrate (10), a gate electrode (20) provided on a portion of the substrate, an insulation layer (30) arranged to cover the gate electrode and the substrate, a source or drain (40) provided on the insula... | 11/21/2006 |
| 7129105 | Method for manufacturing thin film transistor array panel for display device A gate wire including gate lines, gate electrodes, and gate pads and extending in a transverse direction is formed on a substrate. A gate insulating layer is formed thereafter, and a semiconductor layer and an ohmic contact layer are sequentially formed thereon. A c... | 10/31/2006 |
| 7125757 | Method of manufacturing an array substrate for a liquid crystal display device An advantage of the present invention is to provide a method of manufacturing an array substrate for a liquid crystal display device in which a mask that has double slits in it is used in the photolithographic masking process for the pixel electrode to reduce the di... | 10/24/2006 |
| 7101809 | Method of manufacturing a substrate for an electronic device by using etchant and electronic device having the substrate In the case that a stacked layer, in which another metal layer is stacked on an Al layer or Al alloy layer having a low resistance, is used as a wiring material, an etchant is provided which can etch to a substantially equal etching rate by executing only one etchin... | 09/05/2006 |
| 7078255 | Thin film transistor array panel for a liquid crystal display and a method for manufacturing the same Simplified method of manufacturing liquid crystal displays. A gate wire including a gate line, a gate pad and a gate electrode is formed on the substrate by using the first mask. A gate insulating layer, a semiconductor layer, a ohmic contact layer and a metal layer... | 07/18/2006 |
| 7078279 | Manufacturing method of a thin film transistor array substrate A method of manufacturing a thin film transistor capable of simplifying a substrate structure and a manufacturing process is disclosed. The method of manufacturing a thin film transistor array substrate includes involves a three-round mask process, which includes: f... | 07/18/2006 |
| 7078321 | Semiconductor device and method of manufacturing the same A crystalline semiconductor film in which the position and the size of crystal grains are controlled is provided, and a TFT that can operate at high speed is obtained by forming a channel formation region of the TFT from the crystalline semiconductor film. A heat re... | 07/18/2006 |
| 7074672 | Self aligned method of forming a semiconductor memory array of floating gate memory cells with buried bit-line and vertical word line transistor A self aligned method of forming a semiconductor memory array of floating gate memory cells in a semiconductor substrate, and an array formed thereby, whereby each memory cell includes a trench formed into a surface of a semiconductor substrate, spaced apart source ... | 07/11/2006 |
| 7075002 | Thin-film photoelectric conversion device and a method of manufacturing the same A method of manufacturing a thin-film solar cell, comprising the steps of: forming an amorphous silicon film on a substrate; placing a metal element that accelerates the crystallization of silicon in contact with the surface of the amorphous silicon film; subjecting... | 07/11/2006 |
