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| Number | Title | Issue Date |
| 7319238 | Semiconductor device and its manufacturing method An object of the present invention is to provide an active matrix type display unit having a pixel structure in which a pixel electrode formed in a pixel portion a scanning line (gate line) and a data line are suitably arranged, and high numerical aperture is realiz... | 01/15/2008 |
| 7317227 | Method for forming pattern of stacked film A semiconductor film serving as an active region of a thin film transistor and an upper oxide film protecting the semiconductor film are dry etched to form the active region. In this case, a fluorine-based gas is used as the etching gas, and the etching gas is switc... | 01/08/2008 |
| 7317231 | Method for making a semiconductor device having a high-K gate dielectric and a titanium carbide gate electrode A method for making a titanium carbide layer is described. That method comprises alternately introducing a carbon containing precursor and a titanium containing precursor into a chemical vapor deposition reactor, while a substrate is maintained at a selected tempera... | 01/08/2008 |
| 7317438 | Field sequential liquid crystal display device and driving method thereof, and head mounted display A display with high resolution and reduced flicker of image. The driving method of this invention, or the field sequential driving method, divides one frame of image into a plurality of subframes, i.e., divides the period of one image frame into a plurality of subfr... | 01/08/2008 |
| 7316968 | Methods of forming semiconductor devices having multiple channel MOS transistors In a method of manufacturing a semiconductor device, a preliminary active pattern including gate layers and channel layers is formed on a substrate. The gate layers and the channel layers are alternatively stacked. A hard mask is formed on the preliminary active pat... | 01/08/2008 |
| 7316943 | Method for manufacturing semiconductor apparatus having drain/source on insulator A method for manufacturing a semiconductor apparatus, comprises: forming a first semiconductor layer on a semiconductor substrate of a transistor formation region; etching and removing a part of the fir... | 01/08/2008 |
| 7317179 | Systems and methods to shape laser light as a homogeneous line beam for interaction with a film deposited on a substrate Systems and methods are disclosed for shaping and homogenizing a laser beam for interaction with a film. The shaping and homogenizing system may include a lens array and a lens that is positioned to receive laser light from the lens array and produce a respective el... | 01/08/2008 |
| 7315044 | Thin film transistor array panel and manufacturing method thereof A thin film transistor (TFT) array panel includes: an insulating substrate (110); first and second semiconductor members (151 a,b) formed on the substrate and having opposite conductivity; a first gate member (121a) formed on a fir... | 01/01/2008 |
| 7315994 | Method and device for automated layer generation for double-gate FinFET designs In a FinFET integrated circuit design, a combined cell structure contains two single cell structures at a first design hierarchy having fin shapes, the cell structures are placed adjacent to each other. The combined fin shapes of the two single cell structures at th... | 01/01/2008 |
| 7314784 | Thin film transistor and manufacturing method thereof A channel-length of a TFT can be controlled with higher reproducibility, and a short channel-length of the TFT can be manufactured. Further, a structure of the TFT having an improved current-voltage characteristic is provided. A thin film transistor has a lamination... | 01/01/2008 |
| 7312675 | Vertically separated acoustic filters and resonators An apparatus including vertically separated acoustic resonators are disclosed. The apparatus includes a first acoustic resonator on a substrate and a second acoustic resonator vertically separated above the first acoustic resonator. Because the resonators are vertic... | 12/25/2007 |
| 7312111 | Liquid crystal display panel An LCD panel includes a plurality of gate lines and gate electrodes formed on a substrate and a gate insulating film formed on the substrate including the gate lines and the gate electrodes. A semiconductor film is formed in a region on the gate insulating film and ... | 12/25/2007 |
| 7312471 | Liquid crystal display device having drive circuit and fabricating method thereof A thin film transistor and a fabricating method of a thin film transistor for a liquid crystal display device includes forming a polycrystalline silicon film on a substrate, the polycrystalline silicon film having square shaped grains; forming an active layer by etc... | 12/25/2007 |
| 7312112 | Transistor array substrate fabrication for an LCD A fabrication process for transistor array substrates of different sizes on a common substrate provides quality control, yield, and space efficiency advantages. In particular, a four-mask process, including a mask with diffraction slits, may be employed to fabricate... | 12/25/2007 |
| 7312155 | Forming self-aligned nano-electrodes A nano-electrode or nano-wire may be etched centrally to form a gap between nano-electrode portions. The portions may ultimately constitute a single electron transistor. The source and drain formed from the electrode portions are self-aligned with one another. Using... | 12/25/2007 |
| 7312125 | Fully depleted strained semiconductor on insulator transistor and method of making the same An integrated circuit includes multiple layers. A semiconductor-on-insulator (SOI) wafer can be used to house transistors. Two substrates or wafers can be bonded to form the multiple layers. A strained semiconductor layer can be between a silicon germanium layer and... | 12/25/2007 |
| 7309634 | Non-volatile semiconductor memory devices using prominences and trenches A semiconductor substrate is patterned to form a depression and prominence. A floating gate is formed so as to cover at least both sidewalls of the prominence of the depression and prominence, and is then etched to form a trench for a device isolation self-aligned w... | 12/18/2007 |
| 7309874 | Field-effect transistor An organic FET 1 comprises a substrate 2 on which a gate insulation film 41 and a functional layer 43 are formed in this order, and a source electrode 6 and a drain electrode 8 are further arranged thereon at a predetermined... | 12/18/2007 |
| 7306979 | Method of fabricating thin film transistor substrate for display device A method of fabricating a thin film transistor substrate for a display device is provided. The method includes the steps of forming a gate line and a gate electrode connected to the gate line; forming a gate insulating film disposed covering the gate line and the ga... | 12/11/2007 |
| 7306978 | Light emitting device and method of manufacturing thereof The present invention provides a highly stable light emitting device having high light-emitting efficiency (light-extraction efficiency) with high luminance and low power consumption, and a method of manufacturing thereof. A partition wall and a heat-resistant plana... | 12/11/2007 |
| 7304328 | Use of hydrogen implantation to improve material properties of silicon-germanium-on-insulator material made by thermal diffusion A method of forming a relaxed SiGe-on-insulator substrate having enhanced relaxation, significantly lower defect density and improved surface quality is provided. The method includes forming a SiGe alloy layer on a surface of a first single crystal Si layer. The fir... | 12/04/2007 |
| 7303946 | Method of manufacturing a semiconductor device using an oxidation process A method of manufacturing a MOS transistor incorporating a silicon oxide film serving as a gate insulating film and containing nitrogen and a polycrystalline silicon film serving as a gate electrode and containing a dopant and arranged such that the gate electrode i... | 12/04/2007 |
| 7303945 | Method for forming pattern of stacked film and thin film transistor A method for forming a pattern of a stacked film, includes steps (a) to (e). The step (a) is forming sequentially a first base insulating film and a light shielding material on a transparent substrate. The step (b) is patterning the light shielding material to obtai... | 12/04/2007 |
| 7300831 | Liquid crystal display device having driving circuit and method of fabricating the same A polycrystalline silicon thin film transistor of a bottom gate structure is used as a switching element and a mask having transmissive, half-transmissive and blocking areas is used so that an array substrate for a liquid crystal display device having a monolithic d... | 11/27/2007 |
| 7300516 | Laser irradiation method and laser irradiation apparatus, and method for fabricating semiconductor device When a laser beam is radiated on a semiconductor film under appropriate conditions, the semiconductor film can be crystallized into single crystal-like grains connected in a scanning direction of the laser beam (laser annealing). The most efficient laser annealing c... | 11/27/2007 |
| 7300829 | Low temperature process for TFT fabrication Method of fabricating a thin-film transistor (TFT) in which a gate metal is deposited onto a substrate in order to form the gate of the thin-film transistor. The substrate may be an insulative substrate or a color filter. In a first method, the gate metal is subject... | 11/27/2007 |
| 7300830 | Method of fabricating liquid crystal display panel A method of fabricating a liquid crystal display panel includes forming a first conductive layer on a substrate and patterning the first conductive layer using a first resist pattern printed on the first conductive layer to form a gate pattern. A semiconductor layer... | 11/27/2007 |
| 7297579 | Semiconductor device and manufacturing method thereof The objectives of the present invention are achieving TFTs having a small off current and TFT structures optimal for the driving conditions of a pixel portion and driver circuits, and providing a technique of making the differently structured TFTs without increasing... | 11/20/2007 |
| 7297452 | Photosensitive resin composition, thin film panel made with photosensitive composition, and method for manufacturing thin film panel A photosensitive resin composition includes an alkali-soluble resin, a quinone diazide, a surfactant, and a solvent. The surfactant includes an organic fluorine compound having the structure a first silicone compound having... | 11/20/2007 |
| 7294535 | Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. A heat treatment is carried out for an amorphous semiconductor thin film, to thereby obtain a crystalline semiconductor thin fil... | 11/13/2007 |
| 7294537 | Method of fabricating thin film transistor with multiple gates using super grain silicon crystallization A method of fabricating a thin film transistor with multiple gates uses a super grain silicon (SGS) crystallization process. The thin film transistor includes a semiconductor layer having a zigzag shape formed on an insulating substrate, and a gate electrode that ov... | 11/13/2007 |
| 7291521 | Self correcting suppression of threshold voltage variation in fully depleted transistors A semiconductor fabrication method includes implanting or otherwise introducing a counter doping impurity distribution into a semiconductor top layer of a silicon-on-insulator (SOI) wafer. The top layer has a variable thickness including a first thickness at a first... | 11/06/2007 |
| 7289366 | Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout A nonvolatile memory array has a single transistor flash memory cell and a two transistor EEPROM memory cell which maybe integrated on the same substrate. The nonvolatile memory cell has a floating gate with a low coupling coefficient to permit a smaller memory cell... | 10/30/2007 |
| 7288940 | Galvanically isolated signal conditioning system A galvanically isolated signal conditioning system includes a signal conditioning circuit on an integrated circuit chip; a flying capacitor; and a galvanically isolating MEMS switching device on an integrated circuit chip for selectively switching the flying capacit... | 10/30/2007 |
| 7288444 | Thin film transistor and method of manufacturing the same A method of manufacturing a thin film transistor that provides high electric field mobility is disclosed. In one embodiment, the method includes: a) forming an amorphous silicon layer and a blocking layer on an insulating substrate; b) forming a photoresist layer ha... | 10/30/2007 |
| 7288014 | Design, fabrication, testing, and conditioning of micro-components for use in a light-emitting panel A method of forming micro-components is disclosed. The method includes pretesting and conditioning of the micro-components. The micro-components that fail testing or conditioning are discarded, and those remaining are assembled into a panel. ... | 10/30/2007 |
| 7288442 | Method for manufacturing contact structures of wirings First, a conductive material of aluminum-based material is deposited and patterned to form a gate wire including a gate line, a gate pad, and a gate electrode. A gate insulating layer is formed by depositing nitride silicon in the range of more than 300° C. for 5 m... | 10/30/2007 |
| 7288814 | Selective post-doping of gate structures by means of selective oxide growth A method for doping a polysilicon gate conductor, without implanting the substrate in a manner that would effect source/drain formation is provided. The inventive method comprises forming at least one polysilicon gate region atop a substrate; forming oxide seed spac... | 10/30/2007 |
| 7288819 | Stable PD-SOI devices and methods One aspect of the present subject matter relates to a partially depleted silicon-on-insulator structure. The structure includes a well region formed above an oxide insulation layer. In various embodiments, the well region is a multilayer epitaxy that includes a sili... | 10/30/2007 |
| 7288457 | Method for making semiconductor device comprising a superlattice with upper portions extending above adjacent upper portions of source and drain regions A method for making a semiconductor device may include providing a semiconductor substrate and forming at least one MOSFET by forming spaced apart source and drain regions and a superlattice on the substrate so that the superlattice is between the source and drain r... | 10/30/2007 |
