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| Number | Title | Issue Date |
| 5110748 | Method for fabricating high mobility thin film transistors as integrated drivers for active matrix display High mobility thin film transistors for fabricating integrated drivers for active matrix displays and a special method of fabrication for obtaining the thin film transistors having mobility sufficiently high enough as drivers operable in the several megah... | 05/05/1992 |
| 5107315 | MIS type diamond field-effect transistor with a diamond insulator undercoat Disclosed herein is a MIS type diamond field-effect transistor comprising a diamond semiconductor layer provided as an active layer by chemical vapor deposition (CVD), and a diamond insulator layer provided on the diamond semiconductor layer also by CVD, ... | 04/21/1992 |
| 5102813 | Method of fabricating a thin film transistor A thin film transistor is produced by applying onto a non-silicon foundation, a thin film of silicon semiconductor material under such conditions that polycrystalline or microcrystalline material is formed. Source and/or drain regions of doped semiconduct... | 04/07/1992 |
| 5093703 | Thin film transistor with 10-15% hydrogen content A thin film transistor includes a glass substrate on a surface of which a hydrogenated amorphous silicon (a-Si:H) film is formed. On the a-Si:H film, a source electrode and a drain electrode are respectively formed with a suitable interval between them. A... | 03/03/1992 |
| 5091325 | Process for making MOS devices for low-temperature operation Electric charge is supplied to a circuit node being in a charge storing state within a signal processor in response to a signal-processing commencing signal. The processor is operated in a low-temperature range, for example, in the range of temperature be... | 02/25/1992 |
| 5081053 | Method for forming a transistor having cubic boron nitride layer A method for forming a transistor which may be suitable for high temperature application is provided. A single crystal silicon substrate has an overlaying layer of epitaxially grown cubic boron nitride in crystallographic registry with the silicon substra... | 01/14/1992 |
| 5034335 | Method of manufacturing a silicon on insulator (SOI) semiconductor device A semiconductor device includes a silicon layer of a first conductivity type, which is disposed on a dielectric substrate and in which at least two zones of a semiconductor circuit element of a second opposite conductivity type and a contact zone having t... | 07/23/1991 |
| 4906587 | Making a silicon-on-insulator transistor with selectable body node to source node connection A silicon-on-insulator MOS transistor is disclosed which has contact regions on both the source and drain sides of the gate electrode for potentially making contact to the body node from either side. Each contact region is of the same conductivity type as... | 03/06/1990 |
| 4902641 | Process for making an inverted silicon-on-insulator semiconductor device having a pedestal structure A process for making an inverted silicon-on-insulator semiconductor device having a pedestal structure. After the processing of polysilicon layers, dielectric layers, an epitaxial region and a nitride layer, a second substrate is bonded to the nitride lay... | 02/20/1990 |
| 4885258 | Method for making a thin film transistor using a concentric inlet feeding system There is provided an improved thin-film transistor of which a principal semiconducting layer comprises a layer composed of an amorphous material prepared by (a) introducing (i) a gaseous substance containing atoms capable of becoming constituents for said... | 12/05/1989 |
| 4883766 | Method of producing thin film transistor A method of producing a thin film transistor comprises the steps of preparing a structure having a substrate, an active layer and a diffusion layer formed on the substrate, and a gate electrode formed on the active layer, forming on the structure an inter... | 11/28/1989 |
| 4880753 | Method of fabricating a polysilicon thin film transistor In a process for manufacturing a thin film transistor, a first polysilicon layer is formed on a substrate and a silicon dioxide layer is formed on a region of the first polysilicon layer leaving exposed regions of that layer. A second polysilicon layer is... | 11/14/1989 |
| 4868140 | Semiconductor device and method of manufacturing the same In a semiconductor device, an active layer is formed on an insulating substrate. The active layer is a polycrystalline semiconductor film having large diameter crystal grain. A carrier mobility of said polycrystalline semiconductor film is not lower than ... | 09/19/1989 |
| 4851363 | Fabrication of polysilicon fets on alkaline earth alumino-silicate glasses A method of fabricating polycrystalline silicon thin film field effect transistors on low cost alkaline earth alumino-silicate glass substrates which can tolerate device processing temperatures of approximately 800° C.... | 07/25/1989 |
| 4769338 | Thin film field effect transistor and method of making same There is disclosed a film field effect transistor which can be operated at fast switching rates for use, for example, in video display applications. The transistor includes a body of silicon semiconductor material having a structure more ordered than amor... | 09/06/1988 |
| 4766482 | Semiconductor device and method of making the same A semiconductor device having a layer of semiconductor material disposed on an insulating substrate is disclosed. A means is provided within the insulating substrate for minimizing the collection of radiation-induced charge carriers at the interface betwe... | 08/23/1988 |
| 4755482 | Making semiconductor device on insulating substrate by forming conductive layers on both major surfaces A method is disclosed for the manufacture of a multilayered interconnect structure on an insulating substrate. First and second conductive layers are formed on one and on the other (reverse) surfaces, respectively, of the insulating substrate. An insulati... | 07/05/1988 |
| 4741964 | Structure containing hydrogenated amorphous silicon and process A structure containing a substrate having a first hydrogenated amorphous silicon layer thereon and a second hydrogenated amorphous silicon layer located above the first layer. The two hydrogenated amorphous silicon layers differ from each other in the con... | 05/03/1988 |
| 4738749 | Process for producing an active matrix display screen with gate resistance Process for producing an active matrix display screen with gate resistance. A resistive layer, for example of aSi:n+ is inserted under the gate of the transistors. A short circuit in the insulating layer no longer risks short-circuiting a line and ... | 04/19/1988 |
| 4704302 | Process for producing an insulating layer buried in a semiconductor substrate by ion implantation Process for producing a buried insulating layer in a semiconductor substrate by ion implantation. This process consists of producing a mask on the substrate regions where the active zones are located, carrying out oxygen or nitrogen ion implantation in th... | 11/03/1987 |
| 4675978 | Method for fabricating a radiation hardened oxide having two portions A method for making a partially radiation hardened oxide comprises forming a first portion of an oxide layer on a semiconductor body of material at a temperature between about 950° C. and 1400° C., preferably between about 1000° C. and 1200° C. Therea... | 06/30/1987 |
| 4654959 | Method for the manufacture of thin film transistors A thin film transistor comprises an insulating substrate, a semiconductor layer on the substrate, an electrically insulating oxide layer overlaying the semiconductor layer, and an electroconductive layer overlaying the oxide layer. The oxide layer is form... | 04/07/1987 |
| 4648173 | Fabrication of stud-defined integrated circuit structure Fabrication of a submicron wide single crystal silicon structure protruding from a monolithic silicon body. Starting with a single crystal N silicon body having a P region, an insulator stud of submicron width and length dictated by the limits of lithogra... | 03/10/1987 |
| 4478655 | Method for manufacturing semiconductor device The invention provides a method for manufacturing a semiconductor device, having the steps of: forming a first mask pattern on a semiconductor layer through an SiO2 film; forming a thin layer on at least side surfaces of the first mask pattern;... | 10/23/1984 |
| 4375993 | Method of producing a semiconductor device by simultaneous multiple laser annealing A method of producing a semiconductor device which comprises steps of forming an insulator layer on a semiconductor substrate, forming a semiconductor layer on the insulator layer and then annealing the semiconductor layer by means of a first laser with a... | 03/08/1983 |
| 4373254 | Method of fabricating buried contacts A novel method for forming a buried contact wherein the area of the buried contact is preconditioned by being doped to thus preclude the formation of an undesirable junction surrounding the buried contact.... | 02/15/1983 |
| 4372032 | Normally off InP field effect transistor making process A normally off insulated gate field effect transistor having a p-type sin crystal InP substrate with source and drain contacts spaced apart and disposed thereon with a layer of silicon dioxide disposed over the InP material in the space between the conta... | 02/08/1983 |
| 4351856 | Semiconductor device and method of manufacturing the same A semiconductor device is disclosed wherein a polycrystalline film whose principal constituent is silicon is formed on an amorphous or polycrystalline substrate, the polycrystalline film having a carrier mobility of at least 1 cm2 /V.multidot.s... | 09/28/1982 |
| 4334347 | Method of forming an improved gate member for a gate injected floating gate memory device An improved gate injected, floating gate memory device is described having improved charge retention and endurance characteristics is described in which the barrier height for the injection of charge (electrons or holes) into the floating gate is reduced.... | 06/15/1982 |
| 4331758 | Process for the preparation of large area TFT arrays Thin film transistor arrays are prepared by a vacuum deposition technique wherein only a single deposition of discrete areas of an insulating material are deposited through a mask. No registration is required to form the various elements of the transistor... | 05/25/1982 |
| 4327477 | Electron beam annealing of metal step coverage Defects in the metal step coverage of a thin film semiconductor device are removed by annealing the metal layer with a pulsed electron beam.... | 05/04/1982 |
| 4313809 | Method of reducing edge current leakage in N channel silicon-on-sapphire devices A novel process for improving the operation of silicon-on-sapphire devices by removing or minimizing edge current leakage. The reduction in leakage current is accomplished by subjecting the completed device to a sputtering operation and depositing thereon... | 02/02/1982 |
| 4312680 | Method of manufacturing submicron channel transistors A short channel insulated gate field effect transistor, suitable for use in high speed integrated circuits is described as being manufactured by a self-aligned process in which the gate electrode is formed by a selective etching technique. In practicing t... | 01/26/1982 |
| 4292728 | Method for manufacturing semiconductor integrated circuits utilizing special contact formation A method for manufacturing semiconductor integrated circuits such as metal oxide semiconductor field effect transistors having source and drain regions to which contact holes are made such that not only the contact parts of the source and the drain region... | 10/06/1981 |
| 4263057 | Method of manufacturing short channel MOS devices A short channel MOS transistor and the method for fabricating same is described wherein the dopant concentrations of the source and drain regions are maintained at different levels of conductivity modifiers. The method described teaches first doping the s... | 04/21/1981 |
| 4259779 | Method of making radiation resistant MOS transistor The radiation resistance of an MOS transistor is improved by making the transistor in a manner such that, after the gate insulation layer is formed, all further steps are carried out at a relatively low temperature, i.e., less than about 900° C. The sour... | 04/07/1981 |
| 4252580 | Method of producing a microwave InP/SiO2 insulated gate field effect transistor An InP/SiO2 insulated gate field effect transistor which exhibits power gain at microwave frequencies is manufactured by using an n-type epitaxial semiconducting InP film on a semi-insulating InP substrate and depositing a pyrolytic silicon dio... | 02/24/1981 |
| 4236167 | Stepped oxide, high voltage MOS transistor with near intrinsic channel regions of different doping levels A Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET) is described wherein a body of semiconductor material is provided with source, drain and channel regions and a gate structure located over the interstitial channel portion of the semiconductor b... | 11/25/1980 |
| 4232327 | Extended drain self-aligned silicon gate MOSFET A Metal-Oxide-Semiconductor-Field Effect Transistor (MOSFET) is described wherein a body of semiconductor material is provided with source, drain and channel regions. A gate structure is provided over the interstitial channel region of the semiconductor b... | 11/04/1980 |
| 4201603 | Method of fabricating improved short channel MOS devices utilizing selective etching and counterdoping of polycrystalline silicon A method for fabricating a short channel MOS device is described wherein the conductivity of the gate member is increased by a factor of about 2.5 by counterdoping a P-type doped polycrystalline line with an N-type dopant.... | 05/06/1980 |
