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"I hate what they've done to my child...I would never let my own children watch it. "
Vladimir Zworykin, television pioneer ; Talking about an invention in which he played a critical role.
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| Number | Title | Issue Date |
| 7625785 | Semiconductor device and manufacturing method thereof A semiconductor device having a crystalline semiconductor film with production of a cavity suppressed and a manufacturing method thereof A manufacturing method of a semiconductor device according to the invention comprises the steps of forming an amorphous silicon f... | 12/01/2009 |
| 7615421 | Method for fabricating thin film transistor The present invention relates to a method for fabricating thin film transistor, more particularly, to a method for fabricating thin film transistor which not only manufactures a polycrystalline silicon layer having large grain size and containing a trace of residual... | 11/10/2009 |
| 7611930 | Method of manufacturing display device In a case of forming a bottom-gate thin film transistor, a step of forming a microcrystalline semiconductor film over a gate insulating film by a plasma CVD method, and a step of forming an amorphous semiconductor film over the microcrystalline semiconductor film ar... | 11/03/2009 |
| 7605026 | Self-aligned transparent metal oxide TFT on flexible substrate A method of fabricating self-aligned metal oxide TFTs on transparent flexible substrates is disclosed and includes the steps of providing a transparent flexible substrate with at least an opaque first metal TFT electrode in a supporting relationship on the front sur... | 10/20/2009 |
| 7605025 | Methods of forming MOSFETS using crystalline sacrificial structures A Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) can be formed by growing an epitaxial semiconductor layer on an upper surface of a sacrificial crystalline structure and on a substrate to form a buried sacrificial structure. The buried sacrificial struct... | 10/20/2009 |
| 7601572 | Semiconductor device and manufacturing method thereof In order to increase an aperture ratio, a part of or all of a gate electrode that overlaps with channel formation regions (213, 214) of a pixel TFT is caused to overlap with second wirings (source line or drain line) (154, 157). Additionally, a first i... | 10/13/2009 |
| 7585710 | Methods of forming electronic devices having partially elevated source/drain structures Methods of forming an electronic device may include forming a gate electrode on a semiconductor substrate, and forming first and second impurity doped regions of the semiconductor substrate on opposite sides of the gate electrode. An insulating layer may be formed o... | 09/08/2009 |
| 7579223 | Semiconductor apparatus and process for fabricating the same A semiconductor apparatus in which a conducting path formed from organic semiconductor molecules as a material has a novel structure and exhibits high mobility, and a manufacturing method for fabricating the same are provided. Fine particles that include a conductor... | 08/25/2009 |
| 7579224 | Method for manufacturing a thin film semiconductor device It is an object of the present invention to simplify steps needed to process a wiring in forming a multilayer wiring. In addition, when a droplet discharging technique or a nanoimprint technique is used to form a wiring in a contact hole having a comparatively long ... | 08/25/2009 |
| 7575965 | Method for forming large area display wiring by droplet discharge, and method for manufacturing electronic device and semiconductor device It is conceivable that the problem that a signal is delayed by resistor of a wiring in producing a display which displays large area becomes remarkable. The present invention provides a manufacturing process using a droplet discharge method suitable for a large-size... | 08/18/2009 |
| 7569435 | Transistor manufacture A method of making a source-gated transistor is described, in which a gate (4) is provided on substrate (2) followed by gate insulator (6) and semiconductor layer (8). The layer is patterned to align the source with the gate (4) us... | 08/04/2009 |
| 7569436 | Manufacturing method of semiconductor device The present invention makes it is possible to provide a manufacturing method of a semiconductor device by which damage by plasma process or doping process during a LDD formation process can be reduced as much as possible. Charge density to be stored in a gate electr... | 08/04/2009 |
| 7566599 | High performance FET with elevated source/drain region A field effect transistor (FET), integrated circuit (IC) chip including the FETs and a method of forming the FETs. The FETs include a thin channel with raised source/drain (RSD) regions at each end on an insulator layer, e.g., on an ultra-thin silicon on insulator (... | 07/28/2009 |
| 7566598 | Method of mask reduction for producing a LTPS-TFT array by use of photo-sensitive low-K dielectrics The present invention discloses a method of mask reduction for producing a low-temperature polysilicon thin film transistor array by use of a photo-sensitive low-K dielectric, which comprises the steps of: defining a polysilicon-island on a preprocessed glass substr... | 07/28/2009 |
| 7560318 | Process for forming an electronic device including semiconductor layers having different stresses An electronic device can have an insulating layer lying between a first semiconductor layer and a base layer. A second semiconductor layer, having a different composition and stress as compared to the first semiconductor layer, can overlie at least a portion of the ... | 07/14/2009 |
| 7550331 | Multi-channel type thin film transistor and method of fabricating the same A multi-channel type thin film transistor includes a gate electrode over a substrate extending along a first direction, a plurality of active layers parallel to and spaced apart from each other extending along a second direction crossing the first direction, and sou... | 06/23/2009 |
| 7550330 | Deep junction SOI MOSFET with enhanced edge body contacts A semiconductor structure is provided that has body contacts that are located at the edges of the device channel and a buried insulating region under the device channel that is shallower than the buried insulating regions under the source/drain junctions. A method o... | 06/23/2009 |
| 7547591 | Semiconductor device One exemplary embodiment includes a semi-conductor device. The semi-conductor device can include a channel including that includes one or more compounds of the formula AxBxCxOx, wherein each A is selected from the group of... | 06/16/2009 |
| 7537981 | Silicon on insulator device and method of manufacturing the same An isolated semiconductor device and method for producing the isolated semiconductor device in which the device includes a silicon-on-insulator (SOI) device formed on a substrate. A dielectric film is formed on the insulator and covers the SOI device. The dielectric... | 05/26/2009 |
| 7537979 | Method of manufacturing semiconductor device Since sodium contained in glass, or glass itself has low heat resistance; a CPU fabricated using a TFT formed over a glass substrate or the like has not been obtained. In the case of operating a CPU with high-speed, the length of a gate (gate length) of a TFT is req... | 05/26/2009 |
| 7537980 | Method of manufacturing a stacked semiconductor device In a method of manufacturing a stacked semiconductor device, a seed layer including impurity regions may be prepared. A first insulation interlayer pattern having a first opening may be formed on the seed layer. A first SEG process may be carried out to form a first... | 05/26/2009 |
| 7531393 | Non-planar MOS structure with a strained channel region An embodiment is a non-planar MOS transistor structure including a strained channel region. The combination of a non-planar MOS transistor structure, and in particular an NMOS tri-gate transistor, with the benefits of a strained channel yields improved transistor dr... | 05/12/2009 |
| 7524709 | Manufacturing method for a display device A technology for easily forming a multi-layer wiring structure that is fine and reliable. In the multi-layer wiring structure, the lower-layer wiring and the upper-layer wiring that are formed to sandwich an insulating layer are electrically connected to each other ... | 04/28/2009 |
| 7521299 | Method of manufacturing transistor, method of manufacturing electro-optical device, and method of manufacturing electronic device A method of manufacturing a transistor includes disposing a droplet containing a bank material as a solute or a dispersoid on a substrate, drying the droplet to form a bank, ejecting a conductive material on a part of the bank to form a first conductive region and a... | 04/21/2009 |
| 7517740 | Method of crystallizing/activating polysilicon layer and method of fabricating thin film transistor having the same polysilicon layer Provided is a method of crystallizing/activating a polysilicon layer and a method of fabricating a thin film transistor having the same polysilicon layer, in which when a gate material is patterned to form a gate electrode and define source/drain regions, the gate m... | 04/14/2009 |
| 7517741 | Single transistor memory cell with reduced recombination rates A semiconductor fabrication method includes forming a semiconductor structure including source/drain regions disposed on either side of a channel body wherein the source/drain regions include a first semiconductor material and wherein the channel body includes a mig... | 04/14/2009 |
| 7514303 | Method of fabricating reflection type liquid crystal display A liquid crystal display device includes (a) a first substrate, (b) a second substrate spaced away from and facing the first substrate, (c) a liquid crystal layer sandwiched between the first and second substrates, (d) a transistor formed on the first substrate, (e)... | 04/07/2009 |
| 7504288 | Method for laser-processing semiconductor device A linear laser light which has an energy and is to be scanned is irradiated to a semiconductor device formed on a substrate, and then the substrate is rotated to irradiate to the semiconductor device a linear laser light which has a higher energy than that of the ir... | 03/17/2009 |
| 7501318 | Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion anneal A method of forming a substantially relaxed, high-quality SiGe-on-insulator substrate material using SIMOX and Ge interdiffusion is provided. The method includes first implanting ions into a Si-containing substrate to form an implant rich region in the Si-containing... | 03/10/2009 |
| 7498209 | Etching tape and method of fabricating array substrate for liquid crystal display using the same A method of fabricating a liquid crystal display array substrate includes forming a gate wiring line having a gate pad electrode, forming a data wiring line having a data pad electrode, forming a protection layer over the gate pad electrode and the data pad electrod... | 03/03/2009 |
| 7482210 | Method of fabricating semiconductor device having junction isolation insulating layer A semiconductor device and a method for fabricating the same are provided. The provided semiconductor device includes a field oxide layer formed in a semiconductor substrate to define an active region; gate structures formed on the active region; source/drain juncti... | 01/27/2009 |
| 7476576 | Method of fabricating a semiconductor device A semiconductor device with high reliability is provided using an SOI substrate. When the SOI substrate is fabricated by using a technique typified by SIMOX, ELTRAN, or Smart-Cut, a single crystal semiconductor substrate having a main surface (crystal face) of a {11... | 01/13/2009 |
| 7476577 | Semiconductor device and method of fabricating the same In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balance. In the semiconductor devi... | 01/13/2009 |
| 7473590 | Semiconductor device having body contact through gate and method of fabricating the same According to an embodiment of the invention, a lower transistor is formed on a semiconductor substrate, and an upper thin film transistor is formed on the lower transistor. A body contact plug is formed to penetrate an upper gate electrode of the upper thin film tra... | 01/06/2009 |
| 7473592 | Method of fabricating a semiconductor device A semiconductor device with high reliability is provided using an SOI substrate. When the SOI substrate is fabricated by using a technique typified by SIMOX, ELTRAN, or Smart-Cut, a single crystal semiconductor substrate having a main surface (crystal face) of a {11... | 01/06/2009 |
| 7473591 | Transistor with strain-inducing structure in channel Various methods for forming a layer of strained silicon in a channel region of a device and devices constructed according to the disclosed methods. In one embodiment, a strain-inducing layer is formed, a relaxed layer is formed on the strain-inducing layer, a portio... | 01/06/2009 |
| 7465614 | Method of fabricating semiconductor device and semiconductor fabricated by the same method A semiconductor device and method of fabricating the same are provided. The method includes: depositing a silicon layer containing amorphous silicon on a substrate; partially crystallizing the amorphous silicon by applying an annealing process to the silicon layer u... | 12/16/2008 |
| 7462520 | Methods of fabricating an image sensor Provided are methods of fabricating an image sensor. Embodiments of such methods can include forming a first gate insulation layer in a first region of a semiconductor substrate and a first gate electrode layer, to cover the first gate insulation layer and forming a... | 12/09/2008 |
| 7462519 | Semiconductor device, method of fabricating same, and, electrooptical device A pair of substrates forming the active matrix liquid crystal display are fabricated from resinous substrates having transparency and flexibility. A thin-film transistor has a semiconductor film formed on a resinous layer formed on one resinous substrate. The resino... | 12/09/2008 |
| 7459353 | Methods of laterally forming single crystalline thin film regions from seed layers A method of forming an integrated circuit can be provided by successively laterally forming single crystalline thin film regions from an amorphous thin film using a lower single crystalline seed layer. ... | 12/02/2008 |
