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...that Kleenex tissue was originally designed to be a gas mask filter? It was developed at the beginning of World War I to replace cotton, which was then in short supply as a surgical dressing.
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| Number | Title | Issue Date |
| 7268024 | Semiconductor-on-insulator chip incorporating strained-channel partially-depleted, fully-depleted, and multiple-gate transistors In accordance with a preferred embodiment of the present invention, a silicon-on-insulator (SOI) chip includes a silicon layer of a predetermined thickness overlying an insulator layer. A multiple-gate fully-depleted SOI MOSFET including a strained channel region is... | 09/11/2007 |
| 7265425 | Semiconductor device employing an extension spacer and a method of forming the same A semiconductor device formed on a semiconductor substrate and a method of forming the same. In one embodiment, the semiconductor device includes a gate over the semiconductor substrate and a dielectric liner on a sidewall of the gate. The semiconductor device also ... | 09/04/2007 |
| 7265384 | Thin film transistor and organic electroluminescence display using the same A thin film transistor (TFT) having a lightly doped drain (LDD) structure includes a lightly doped drain (LDD) region formation pattern, an active layer formed in an uneven structure on the LDD region formation pattern, and having a source region and a drain region ... | 09/04/2007 |
| 7265002 | Method for making a semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channel A method for making a semiconductor device may include providing a substrate, and forming at least one MOSFET adjacent the substrate by forming a superlattice including a plurality of stacked groups of layers and a semiconductor cap layer on an uppermost group of la... | 09/04/2007 |
| 7265004 | Electronic devices including a semiconductor layer and a process for forming the same An electronic device can include a first semiconductor portion and a second semiconductor portion, wherein the compositions of the first and second semiconductor portions are different from each other. In one embodiment, the first and second semiconductor portions c... | 09/04/2007 |
| 7262466 | Strained semiconductor-on-insulator structures and methods for making strained semiconductor-on-insulator structures The present invention relates to semiconductor-on-insulator structures having strained semiconductor layers. According to one embodiment of the invention, a semiconductor-on-insulator structure has a first layer including a semiconductor material, attached to a seco... | 08/28/2007 |
| 7261920 | Process for forming a patterned thin film structure on a substrate A process for forming a patterned thin film structure on a substrate is disclosed. A pattern is printed with a material, such as a masking coating or an ink, on the substrate, the pattern being such that, in one embodiment, the desired thin film structures will be f... | 08/28/2007 |
| 7262104 | Selective channel implantation for forming semiconductor devices with different threshold voltages Multiple semiconductor devices are formed with different threshold voltages. According to one exemplary implementation, first and second semiconductor devices are formed and doped differently, resulting in different threshold voltages for the first and second semico... | 08/28/2007 |
| 7262109 | Integrated circuit having a transistor level top side wafer contact and a method of manufacture therefor The present invention provides an integrated circuit and a method of manufacture therefor. The integrated circuit (100), in one embodiment without limitation, includes a dielectric layer (120) located over a wafer substrate (110), and a semicond... | 08/28/2007 |
| 7259431 | Static random access memory using thin film transistors A semiconductor thin film is formed having a lateral growth region which is a collection of columnar or needle-like crystals extending generally parallel with a substrate. The semiconductor thin film is illuminated with laser light or strong light having equivalent ... | 08/21/2007 |
| 7259101 | Nanoparticles and method for making the same A method for making nanoparticles, nanoparticle inks and device layers therefrom is disclosed. In accordance with the present invention, nanoparticles are isolated from a composite material that is formed by treating a metal oxide precursor to form the metal nanopar... | 08/21/2007 |
| 7259052 | Manufacture of a semiconductor integrated circuit device including a pluarality of a columnar laminates having different spacing in different directions For improving the filling properties between vertical MISFETs constituting a SRAM memory cell, the vertical MISFETs are formed over horizontal drive MISFETs and transfer MISFETs, and they are disposed with a narrow pitch in the Y direction and a wide pitch in the X ... | 08/21/2007 |
| 7259069 | Semiconductor device and method of manufacturing the same A semiconductor device and a method of manufacturing the same is disclosed. A trench is formed in an active region of a semiconductor substrate. A doped layer is formed on the inner walls of the trench. The trench is filled up with a first semiconductor layer. A gat... | 08/21/2007 |
| 7259100 | Nanoparticles and method for making the same A method for making nanoparticles, nanoparticle inks and device layers therefrom is disclosed. In accordance with the present invention, nanoparticles are isolated from a composite material that is formed by treating a metal oxide precursor to form the metal nanopar... | 08/21/2007 |
| 7259425 | Tri-gate and gate around MOSFET devices and methods for making same A triple gate metal-oxide semiconductor field-effect transistor (MOSFET) includes a fin structure, a first gate formed adjacent a first side of the fin structure, a second gate formed adjacent a second side of the fin structure opposite the first side, and a top gat... | 08/21/2007 |
| 7259428 | Semiconductor device using SOI structure having a triple-well region A semiconductor device includes a support substrate, a buried insulation film, provided on the support substrate, having a thickness of 5 to 10 nm, a silicon layer provided on the buried insulation film, a MOSFET provided in the silicon layer, and a triple-well regi... | 08/21/2007 |
| 7257007 | Spacers for cells having spaced opposed substrates In an active semiconductor backplane for a liquid crystal spatial light modulator, spacers (25) which are distributed over the backplane extend above an array of electrical and/or electronic elements and comprise at least two layers essentially of the same ma... | 08/14/2007 |
| 7256076 | Manufacturing method of liquid crystal display device A manufacturing method of a thin film transistor of a liquid crystal display device using 3-mask includes forming a gate electrode over a substrate, consecutively forming a gate insulating layer and an active layer, forming a first photoresist pattern, removing an a... | 08/14/2007 |
| 7256077 | Method for removing a semiconductor layer A method of forming a semiconductor device includes forming a first layer over a semiconductor substrate and forming a second layer over the first layer. The second layer includes silicon and has an etch selectivity to the second layer that is greater than approxima... | 08/14/2007 |
| 7256455 | Double gate semiconductor device having a metal gate A semiconductor device may include a substrate, an insulating layer formed on the substrate and a conductive fin formed on the insulating layer. The conductive fin may include a number of side surfaces and a top surface. The semiconductor device may also include a s... | 08/14/2007 |
| 7256842 | Array substrate of liquid crystal display and fabricating method thereof An array substrate of a liquid crystal display being capable of increasing the electrostatic capacitance of a storage capacitor without decreasing the aperture ratio of the LCD. In the array substrate, the gate line is formed a disposed material of a first and a sec... | 08/14/2007 |
| 7256079 | Evaluation method using a TEG, a method of manufacturing a semiconductor device having a TEG, an element substrate and a panel having the TEG, a program for controlling dosage and a computer-readable recording medium recoding the program The reliability of a GOLD structure TFT depends on an impurity concentration in its gate-overlapped region. Thus, it is an object of the present invention to obtain a resistance distribution corresponding to a tapered shape of a gate electrode in a gate-overlapped r... | 08/14/2007 |
| 7253439 | Substrate for display, method of manufacturing the same and display having the same The invention relates to a substrate for a display, a method of manufacturing the same, and a display having the same and provides a substrate for a display which can be manufactured through simple steps with high reliability, a method of manufacturing the same, and... | 08/07/2007 |
| 7253441 | Method of manufacturing thin film transistor The object of the present invention is to form a low-concentration impurity region with good accuracy in a top gate type TFT. Phosphorus is added to a semiconductor layer by using a pattern made of a conductive film as a mask to form an N-type impurity region in a s... | 08/07/2007 |
| 7253120 | Selectable area laser assisted processing of substrates A system and method for selectable area laser treatment of a substrate, such as thin film transistors, the system including a holder holding a substrate in proximity to reactant, and laser beams each addressing independently selectable mutually set apart locations o... | 08/07/2007 |
| 7253037 | Method of fabricating thin film transistor A method of fabricating a thin film transistor is provided. The method comprises first preparing a substrate and forming an amorphous silicon layer on the substrate. A catalyst construction is then positioned on the amorphous silicon layer and an anode and a cathode... | 08/07/2007 |
| 7253060 | Gate-all-around type of semiconductor device and method of fabricating the same A gate-all-around (GAA) transistor device has a pair of pillars that include the source/drain regions, a channel region bridging the source/drain regions, and a gate electrode and gate oxide which surround the channel region. The pillars are formed by providing a mo... | 08/07/2007 |
| 7253033 | Method of manufacturing a semiconductor device that includes implanting in multiple directions a high concentration region In a complete depletion type SOI transistor, the roll-off of a threshold value is suppressed, independently from the formation of an SOI film to be thinner. As for a semiconductor device (1), the impurity concentration in a channel formation portion (10 | 08/07/2007 |
| 7253036 | Method of forming gate insulation film using plasma method of fabricating poly-silicon thin film transistor using the same A method of forming a gate insulation film of a crystallized thin film transistor, is provided, which can enhance an interfacial feature which exists between a gate oxide film and a silicon thin film substrate and which is fatal to performance of the thin film trans... | 08/07/2007 |
| 7253035 | Thin film transistor array panel and manufacturing method thereof A method of manufacturing a thin film transistor array panel is provided, which includes: forming a gate line on a substrate; forming a gate insulating layer; forming a semiconductor layer; forming a lower data line; forming an upper data line including a source ele... | 08/07/2007 |
| 7253038 | Semiconductor device and method for manufacturing the same It is a problem to realize, by a reduced number of processes than that of the conventional, a reliable active-matrix liquid crystal display device having a high opening ratio for high-definition display. The present invention is characterized by: forming a gate elec... | 08/07/2007 |
| 7253032 | Method of flattening a crystallized semiconductor film surface by using a plate First laser light is irradiated (energy density of 400 to 500 mj/cm2) to a semiconductor film 102 in an atmosphere containing oxygen in order to obtain a semiconductor film 102b having large depressions and projections on the surface.... | 08/07/2007 |
| 7250634 | Light-emitting device, method of manufacturing the same, and display unit Light-emitting devices capable of preventing separation or alteration of a first electrode to obtain high performance, methods of manufacturing the light-emitting device, and display units are provided. A first electrode as an anode, an insulating film, an organic l... | 07/31/2007 |
| 7247529 | Method for manufacturing display device The present invention provides a method for manufacturing a display device having a TFT that can be operated at high speed while using a small number of photomasks and improving the utilization efficiency of materials, where the threshold value is difficult to be va... | 07/24/2007 |
| 7247883 | Thin film transistor having LDD structure A thin film transistor having a LDD structure that may improve its channel reliability and output characteristics. A semiconductor layer comprises source/drain regions, a channel region positioned between the source/drain regions, and an LDD region positioned betwee... | 07/24/2007 |
| 7247562 | Semiconductor element, semiconductor device and methods for manufacturing thereof The present invention provides a method of manufacturing a semiconductor element having a miniaturized structure and a semiconductor device in which the semiconductor element having a miniaturized structure is integrated highly, by overcoming reduction of the yield ... | 07/24/2007 |
| 7247910 | MOSFET formed on a silicon-on-insulator substrate having a SOI layer and method of manufacturing In a FET having a thin-film SOI layer, to prevent a parasitic resistance increase in source/drain regions. To realize an elevated layer to be formed on the source/drain region without using a lithography process and without a fear of a short circuit. Element-isolati... | 07/24/2007 |
| 7247569 | Ultra-thin Si MOSFET device structure and method of manufacture The present invention comprises a method for forming an ultra-thin channel MOSFET and the ultra-thin channel MOSFET produced therefrom. Specifically, the method comprises providing an SOI substrate having a buried insulating layer underlying an SOI layer; forming a ... | 07/24/2007 |
| 7247881 | Organic light-emitting display with pad area and fabricating method of same An organic light-emitting display including a substrate, at least one thin film transistor, a pixel electrode and at least one pad electrode. The substrate is provided with a display area and a pad area spaced apart from the display area. The thin film transistor is... | 07/24/2007 |
| 7245002 | Semiconductor substrate having a stepped profile A semiconductor substrate which effectively prevents a chipping phenomenon, wherein the outer peripheral extremity of the insulation layer is located between the outer peripheral extremity of the semiconductor layer and the outer peripheral extremity of the support ... | 07/17/2007 |
