Class 438/151 - Having insulated gate

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Process for making an insulated gate field effect transistor
No. of patents: 1804
Last issue date: 05/08/2012

«First «Previous1 2 3 4 5 6 7 8 9 10 11 Next»Last»

Number	Title	Issue Date
8173496	Method for manufacturing semiconductor device A stack including at least an insulating layer, a first electrode, and a first impurity semiconductor layer is provided over a supporting substrate; a first semiconductor layer to which an impurity element imparting one conductivity type is added is formed over the ...	05/08/2012
8148215	Non-volatile memory and method of manufacturing the same A non-volatile memory in which a leak current from an electric charge accumulating layer to an active layer is reduced and a method of manufacturing the non-volatile memory are provided. In a non-volatile memory made from a semiconductor thin film that is formed on ...	04/03/2012
8138031	Semiconductor device and method of manufacturing semiconductor device A method of manufacturing a semiconductor device includes forming a plurality of Fins including a semiconductor material on an insulation layer; forming gate insulation films on sidewalls of the Fins; forming a gate electrode which extends in a direction of arrangem...	03/20/2012
8138030	Asymmetric finFET device with improved parasitic resistance and capacitance A method for forming a fin field effect transistor (finFET) device includes, forming a fin structure in a substrate, forming a gate stack structure perpendicular to the fin structure, and implanting ions in the substrate at an angle (θ) to form a source region and ...	03/20/2012
8133770	Semiconductor device and method for manufacturing the same A silicon film is crystallized in a predetermined direction by selectively adding a metal element having a catalytic action for crystallizing an amorphous silicon and annealing. In manufacturing TFT using the crystallized silicon film, TFT provided such that the cry...	03/13/2012
8129233	Method for fabricating thin film transistor A method for fabricating a thin film transistor (TFT) on a substrate includes forming a gate electrode; forming a semiconductor layer being insulated from the gate electrode and partially overlapped with the gate electrode; sequentially forming first and second gate...	03/06/2012
8129232	Semiconductor device and method of manufacturing the same A semiconductor device having a CMOS structure, wherein, in manufacturing a CMOS circuit, an impurity element which imparts p-type conductivity to the active layer of the p-channel type semiconductor device is added before forming the gate insulating film. Then, by ...	03/06/2012
8119464	Fabrication of semiconductors with high-K/metal gate electrodes Semiconductor devices with high-K/metal gates are formed with spacers that are substantially resistant to subsequent etching to remove an overlying spacer, thereby avoiding replacement and increasing manufacturing throughput. Embodiments include forming a high-K/met...	02/21/2012
8119465	Thin film transistor and method for fabricating the same A method of fabricating a thin film transistor including: forming a gate on a substrate; forming a gate insulation layer on the substrate to cover the gate; forming an oxide semiconductor layer on the gate insulation layer; forming a translucent layer on a partial r...	02/21/2012
8119466	Self-aligned process for nanotube/nanowire FETs A complementary metal oxide semiconductor (CMOS) device, e.g., a field effect transistor (FET), that includes at least one one-dimensional nanostructure that is typically a carbon-based nanomaterial, as the device channel, and a metal carbide contact that is self-al...	02/21/2012
8114722	Manufacturing method of semiconductor device To suppress generation of dangling bonds, the present invention relates to a method for manufacturing a semiconductor device including the steps of: forming a semiconductor film; forming a gate insulating film and a gate electrode over the semiconductor film; formin...	02/14/2012
8114723	Method of forming multi-high-density memory devices and architectures A structure, memory devices using the structure, and methods of fabricating the structure. The structure includes: an array of nano-fins, each nano-fin comprising an elongated block of semiconductor material extending axially along a first direction, the nano-fins a...	02/14/2012
8110452	Liquid crystal display device and manufacturing method thereof A lower substrate for a liquid crystal display device and the method of making the same are disclosed. The method includes steps of: (a) providing a substrate; (b) forming a patterned transparent layer having plural recess on the substrate; (c) forming a first barri...	02/07/2012
8093109	Method for forming semiconductor thin film and method for manufacturing electronic device A method for forming a semiconductor thin film includes the steps of applying an inorganic semiconductor fine particle-dispersion solution on a substrate and drying the coating to form a semiconductor fine particle layer, and immersing the semiconductor fine particl...	01/10/2012
8093110	Method for manufacturing thin film transistor A method for manufacturing a thin film transistor (TFT) is disclosed. The method is achieved by forming and defining a source and a drain of a thin film transistor through two lithographic processes cycles so that the channel length (L) of the thin film transistor c...	01/10/2012
8088655	Thin film transistor and manufacturing method thereof The present invention provides a step in which a channel-length of a TFT can be controlled with higher reproducibility. In addition, the present invention provides a step in which a short channel-length of the TFT can be manufactured. Further, the present invention ...	01/03/2012
8088654	Semiconductor device and manufacturing method thereof To provide a semiconductor device which is higher functional and reliable and a technique capable of manufacturing the semiconductor device with a high yield at low cost without complexing the apparatus or process. At least one of a first conductive layer and a seco...	01/03/2012
8088653	Thin-film transistor, method of manufacturing the same, liquid crystal display panel having the same and electro-luminescence display panel having the same A TFT includes a gate electrode, an active layer, a source electrode, a drain electrode, and a buffer layer. The gate electrode is formed on the substrate; the active layer is formed on the gate electrode. The source and drain electrodes, formed on the active layer,...	01/03/2012
8084308	Single gate inverter nanowire mesh Nanowire-based devices are provided. In one aspect, a field-effect transistor (FET) inverter is provided. The FET inverter includes a plurality of device layers oriented vertically in a stack, each device layer having a source region, a drain region and a plurality ...	12/27/2011
8062937	Thin-film transistor substrate, method of manufacturing the same and display panel having the same A thin-film transistor (TFT) substrate includes a gate electrode, a gate insulation pattern, a channel pattern, a first organic insulation pattern, a source electrode and a drain electrode. The gate electrode is formed on a base substrate. The gate insulation patter...	11/22/2011
8053291	Method for making thin film transistor comprising flocculating of carbon nanotubes A method for making a thin film transistor, the method includes the steps of: providing a plurality of carbon nanotubes and an insulating substrate; flocculating the carbon nanotubes to acquire a carbon nanotube structure, applying the carbon nanotube structure on t...	11/08/2011
8048725	Method of forming pattern and method of producing electronic element A method of forming a pattern and a method of producing an electronic element are characterized by including a first step of forming an electrically conductive film (D) by applying a liquid composition onto a first plate (10), and heating the first plate (...	11/01/2011
8048726	SOI semiconductor device with reduced topography above a substrate window area In sophisticated SOI devices, circuit elements, such as substrate diodes, may be formed in the crystalline substrate material on the basis of a substrate window, wherein the pronounced surface topography may be compensated for or at least reduced by performing addit...	11/01/2011
8034672	Method of producing display device, display device, method of producing thin-film transistor substrate, and thin-film transistor substrate A method of producing a display device includes the steps of forming gate electrodes on a substrate so that an arrangement of a source and a drain, in a pixel row direction, of a thin-film transistor formed in each of pixels on the substrate is reversed every pixel ...	10/11/2011
8034673	Film formation method and apparatus for forming silicon-containing insulating film doped with metal A film formation method for a semiconductor process performs a film formation process to form a silicon-containing insulating film doped with a metal on a target substrate, in a process field inside a process container configured to be selectively supplied with a si...	10/11/2011
8030141	Thin film transistor and method for fabricating the same, and liquid crystal display device and method for manufacturing the same A thin film transistor (TFT) including a nanowire semiconductor layer having nanowires aligned in one direction in a channel region is disclosed. The nanowire semiconductor layer is selectively formed in the channel region. A method for fabricating the TFT, a liquid...	10/04/2011
8030140	Semiconductor device having a germanium layer as a channel and method for manufacturing the same A method for manufacturing a semiconductor device comprises forming an insulating layer on a polymer substrate, growing a germanium layer on the insulating layer, forming a gate pattern on the germanium layer, forming a metal layer on the germanium layer including t...	10/04/2011
8026131	SOI radio frequency switch for reducing high frequency harmonics First doped semiconductor regions having the same type doping as a bottom semiconductor layer and second doped semiconductor regions having an opposite type doping are formed directly underneath a buried insulator layer of a semiconductor-on-insulator (SOI) substrat...	09/27/2011
8017461	Methods of forming semiconductor-on-insulating (SOI) field effect transistors with body contacts Semiconductor-on-insulator (SOI) field effect transistors include a semiconductor substrate and a first semiconductor active region on a first portion of a surface of the substrate. A first electrically insulating layer is provided. This first electrically insulatin...	09/13/2011
8012813	Display substrate and method of manufacturing the same A three mask process for forming an LCD substrate includes, depositing in sequence on a base substrate a gate metallic layer, a gate insulation layer and a channel layer. A first photoresist pattern is used to form a gate electrode of a switching device, a channel p...	09/06/2011
8008136	Fully silicided gate structure for FinFET devices A method may include forming a gate electrode over a fin structure, depositing a first metal layer on a top surface of the gate electrode, performing a first silicide process to convert a portion of the gate electrode into a metal-silicide compound, depositing a sec...	08/30/2011
7993992	Semiconductor device and method of fabricating the same There is disclosed a method of fabricating TFTs having reduced interconnect resistance by having improved contacts to source/drain regions. A silicide layer is formed in intimate contact with the source/drain regions. The remaining metallization layer is selectively...	08/09/2011
7993991	Manufacturing method of thin film transistor and manufacturing method of display device A manufacturing method of a thin film transistor and a display device using a small number of masks is provided. A first conductive film, an insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film are stacked. Then, a resi...	08/09/2011
7989275	Thin film transistor, manufacturing method thereof, display device, and manufacturing method thereof A light-blocking layer is formed using a first resist mask, and a base film is formed over the light-blocking layer. A first conductive film, a first insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film are sequentially...	08/02/2011
7985632	Method for forming microwires and/or nanowires A method for forming a wire in a layer based on a monocrystalline or amorphous material. The method forms two trenches in the layer, crossing through one face of the layer, separated from each other by one portion of the layer, by an etching of the layer on which is...	07/26/2011
7981735	Method of manufacturing a Schottky barrier tunnel transistor Provided are a Schottky barrier tunnel transistor and a method of manufacturing the same that are capable of minimizing leakage current caused by damage to a gate sidewall of the Schottky barrier tunnel transistor using a Schottky tunnel barrier naturally formed at ...	07/19/2011
7977173	Silicon thin film transistors, systems, and methods of making same Systems and methods of fabricating silicon-based thin film transistors (TFTs) on flexible substrates. The systems and methods incorporate and combine deposition processes such as chemical vapor deposition and plasma-enhance vapor deposition, printing, coating, and o...	07/12/2011
7977170	Flexible substrate with electronic devices and traces A method of manufacturing an electronic device (10) provides a substrate (20) that has a plastic material and has a metallic coating on one surface. A portion of the metallic coating is etched to form a patterned metallic coating. A particulate materia...	07/12/2011
7977171	Method for fabricating thin film transistor substrate A method of fabricating a thin film transistor substrate for reducing a mask process and, at the same time removing a transparent electrode ITO which remains at a non-display area by a contact hole filling process is disclosed. In the method of fabricating the thin ...	07/12/2011
7977172	Dynamic random access memory (DRAM) cells and methods for fabricating the same A method for fabricating a memory cell is provided. A trench is formed in a semiconductor structure that comprises a semiconductor layer, and a trench capacitor is formed in the trench. Conductivity determining impurities are implanted into the semiconductor structu...	07/12/2011

«First «Previous1 2 3 4 5 6 7 8 9 10 11 Next»Last»

PatentStorm

Bizarre Patents

PatentStorm News

Class 438/151 - Having insulated gate