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| Number | Title | Issue Date |
| 8148214 | Stressed field effect transistor and methods for its fabrication A stressed field effect transistor and methods for its fabrication are provided. The field effect transistor comprises a silicon substrate with a gate insulator overlying the silicon substrate. A gate electrode overlies the gate insulator and defines a channel regio... | 04/03/2012 |
| 8097499 | Semiconductor device and methods thereof A semiconductor device and method thereof. The example method may include forming a semiconductor device, including forming a first layer on a substrate, the first layer including aluminum nitride (AlN), forming a second layer by oxidizing a surface of the first lay... | 01/17/2012 |
| 8058113 | Printing method for high performance electronic devices A method of depositing elongated nanostructures that allows accurate positioning and orientation is described. The method involves printing or otherwise depositing elongated nanostructures in a carrier solution. The deposited droplets are also elongated, usually by ... | 11/15/2011 |
| 8034671 | Polysilicon film, thin film transistor using the same, and method for forming the same A crystallizing method for forming a poly-Si film is described as follows. First, forming an activated layer on a substrate, and the molecule structure of the activated layer includes carbon, hydrogen, oxygen and silicon. And then, forming an amorphous silicon film ... | 10/11/2011 |
| 7993990 | Multiple crystallographic orientation semiconductor structures A semiconductor structure includes an epitaxial surface semiconductor layer having a first dopant polarity and a first crystallographic orientation, and a laterally adjacent semiconductor-on-insulator surface semiconductor layer having a different second dopant pola... | 08/09/2011 |
| 7977169 | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof A semiconductor device includes an oxide semiconductor thin film layer primarily including zinc oxide having at least one orientation other than (002) orientation. The zinc oxide may have a mixed orientation including (002) orientation and (101) orientation. Alterna... | 07/12/2011 |
| 7964453 | Method and system for spatially selective crystallization of amorphous silicon The manufacturing methodology to produce polycrystalline silicon in time and cost efficient manner uses a spatially selective crystallization approach to greatly reduce the amount of energy delivered to the work surface. The amorphous silicon film is subjected to la... | 06/21/2011 |
| 7951654 | Method of fabricating semiconductor device A semiconductor device is fabricated by forming a first crystalline region by irradiating a laser beam to a first region of an amorphous semiconductor film by relatively moving the laser beam with respect to the first region of the amorphous semiconductor film. A se... | 05/31/2011 |
| 7947540 | Multi-level semiconductor device and method of fabricating the same A multi-level semiconductor device includes a first transistor on a semiconductor substrate, the first transistor including a first source/drain region, a semiconductor layer on the semiconductor substrate, a second transistor on the semiconductor layer, the second ... | 05/24/2011 |
| 7915100 | Hybrid orientation CMOS with partial insulation process The present invention provides a method of integrated semiconductor devices such that different types of devices are formed upon a specific crystallographic orientation of a hybrid substrate. In accordance with the present invention, junction capacitance of one of t... | 03/29/2011 |
| 7902002 | Semiconductor device When a semi-conductor film is irradiated with conventional pulsed laser light, unevenness, which is called as ridge, is caused on the surface of the semiconductor film. In the case of a top-gate type TFT, element characteristics are changed depending on the ridge. I... | 03/08/2011 |
| 7892899 | Hybrid orientation substrate and method for fabrication thereof A method for fabricating a hybrid orientation substrate provides for: (1) a horizontal epitaxial augmentation of a masked surface semiconductor layer that leaves exposed a portion of a base semiconductor substrate; and (2) a vertical epitaxial augmentation of the ex... | 02/22/2011 |
| 7879657 | Semiconductor device and manufacturing method thereof An insulating film layer is formed between a channel region of an MOS element formed in a monocrystal silicon layer of an SOS substrate in which the monocrystal silicon layer is laminated on a sapphire substrate, and the sapphire substrate, thereby to bring a stress... | 02/01/2011 |
| 7879658 | Semiconductor device and method for manufacturing the same A semiconductor device includes a silicon crystal layer on an insulating layer, the silicon crystal layer containing a crystal lattice mismatch plane, a memory cell array portion on the silicon crystal layer, the memory cell array portion including memory strings, e... | 02/01/2011 |
| 7863117 | Multilayer silicon over insulator device An apparatus and method for a multilayer silicon over insulator (SOI) device is provided. In the multilayer SOI device, the crystal orientation of at least one active region of a device is different than the active region of at least another device. Where the multil... | 01/04/2011 |
| 7842559 | Method of fabricating multi-gate semiconductor devices with improved carrier mobility A method of fabricating a multi-gate device is disclosed. In one aspect, the method includes providing a substrate having a first semiconductor layer with a first carrier mobility enhancing parameter, an insulating layer, a second semiconductor layer with a second c... | 11/30/2010 |
| 7790522 | Defect-free hybrid orientation technology for semiconductor devices A semiconductor device includes a semiconductor material having two crystal orientations. The semiconductor material forms an active area of the device. A device channel is formed on the two crystal orientations, which include a first region formed in a first crysta... | 09/07/2010 |
| 7785939 | Planar substrate with selected semiconductor crystal orientations formed by localized amorphization and recrystallization of stacked template layers A method utilizing localized amorphization and recrystallization of stacked template layers is provided for making a planar substrate having semiconductor layers of different crystallographic orientations. Also provided are hybrid-orientation semiconductor substrate... | 08/31/2010 |
| 7709305 | Method for producing partial SOI structures comprising zones connecting a superficial layer and a substrate The invention relates to a method for producing a semiconductor structure comprising a superficial layer, at least one embedded layer, and a support, which method comprises: a step of forming, on a first support, patterns in a firs... | 05/04/2010 |
| 7691688 | Strained silicon CMOS on hybrid crystal orientations Methods of forming a strained Si-containing hybrid substrate are provided as well as the strained Si-containing hybrid substrate formed by the methods. In the methods of the present invention, a strained Si layer is formed overlying a regrown semiconductor material,... | 04/06/2010 |
| 7691687 | Method for processing laser-irradiated thin films having variable thickness A crystalline film includes a first crystalline region having a first film thickness and a first crystalline grain structure; and a second crystalline region having a second film thickness and a second crystalline grain structure. The first film thickness is greater... | 04/06/2010 |
| 7678622 | Semiconductor method and device with mixed orientation substrate In a method of forming a semiconductor device, a wafer includes a first semiconductor region of a first crystal orientation and a second semiconductor region of a second crystal orientation. Insulating material is formed over the wafer. A first portion of the insula... | 03/16/2010 |
| 7662677 | Method of fabricating semiconductor device A semiconductor device is fabricated by forming a first crystalline region by irradiating a laser beam to a first region of an amorphous semiconductor film by relatively moving the laser beam with respect to the first region of the amorphous semiconductor film. A se... | 02/16/2010 |
| 7662678 | Method of forming a more highly-oriented silicon layer and substrate having the same Provided are methods of forming a more highly-oriented silicon thin layer having a larger grain size, and a substrate having the same. The methods may include forming an aluminum (Al) layer on a base substrate, forming a more highly-oriented Al layer by recrystalliz... | 02/16/2010 |
| 7655511 | Gate electrode stress control for finFET performance enhancement A finFET and its method for fabrication include a gate electrode formed over a channel region of a semiconductor fin. The semiconductor fin has a crystallographic orientation and an axially specific piezoresistance coefficient. The gate electrode is formed with an i... | 02/02/2010 |
| 7560317 | Method of forming single crystalline silicon layer, structure including the same, and method of fabricating thin film transistor using the same Provided are a method of forming a single crystalline silicon layer, a structure including the same, and method of fabricating a thin film transistor (“TFT”) using the same. The method of forming the single crystalline silicon layer includes forming a silicon ni... | 07/14/2009 |
| 7531392 | Multi-orientation semiconductor-on-insulator (SOI) substrate, and method of fabricating same The present invention relates to semiconductor-on-insulator (SOI) substrate structures that contain surface semiconductor regions of different crystal orientations located directly on an insulator layer. The present invention also relates to methods for fabricating ... | 05/12/2009 |
| 7524708 | Fabrication method of a high brightness light emitting diode with a bidirectionally angled substrate A light emitting diode includes a substrate tilted toward first and second directions simultaneously, a first cladding layer formed with a semiconductor material of a first conductive type on the substrate, an active layer formed on the first cladding layer, and a s... | 04/28/2009 |
| 7524707 | Modified hybrid orientation technology A semiconductor process and apparatus includes forming first and second metal gate electrodes (151, 161) over a hybrid substrate (17) by forming the first gate electrode (151) over a first high-k gate dielectric (121) and forming the seco... | 04/28/2009 |
| 7498208 | Chevron CMOS trigate structure Disclosed herein is a structure with two different type tri-gate MOSFETs formed on the same substrate. Each MOSFET comprises a fin with optimal mobility for the particular type of MOSFET. Due to the processes used to form fins with different crystalline orientations... | 03/03/2009 |
| 7485506 | Hybrid substrate technology for high-mobility planar and multiple-gate MOSFETS A hybrid substrate having a high-mobility surface for use with planar and/or multiple-gate metal oxide semiconductor field effect transistors (MOSFETs) is provided. The hybrid substrate has a first surface portion that is optimal for n-type devices, and a second sur... | 02/03/2009 |
| 7482209 | Hybrid orientation substrate and method for fabrication of thereof A method for fabricating a hybrid orientation substrate provides for: (1) a horizontal epitaxial augmentation of a masked surface semiconductor layer that leaves exposed a portion of a base semiconductor substrate; and (2) a vertical epitaxial augmentation of the ex... | 01/27/2009 |
| 7449374 | Methods of manufacturing semiconductor devices with rotated substrates Integrated circuits are oriented on a substrate at an angle that is rotated between 5 to 40 degrees from a direction parallel or perpendicular to a preferred crystalline plane direction, such as the cleavage plane, of the substrate. Parameters such as stress and mob... | 11/11/2008 |
| 7442589 | System and method for uniform multi-plane silicon oxide layer formation for optical applications Methods and systems for growing uniform oxide layers include an example method including growing a first layer of oxide on first and second facets of the substrate, with the first facet having a faster oxide growth rate. The oxide is removed from the first facet and... | 10/28/2008 |
| 7439110 | Strained HOT (hybrid orientation technology) MOSFETs A strained HOT MOSFET fabrication method. The MOSFET fabrication method includes providing a semiconductor structure which includes (a) a first semiconductor layer having a first crystallographic orientation, (b) a buried insulating layer on top of the first semicon... | 10/21/2008 |
| 7439088 | Liquid crystal display device and fabricating method thereof An array substrate for a liquid crystal display device includes a substrate, a gate line and a data line crossing each other to define a pixel region, a thin film transistor at a crossing of the gate and data lines, a metal pattern over the gate line, a passivation ... | 10/21/2008 |
| 7439107 | Laser irradiation apparatus, method of irradiating laser light, and method of manufacturing a semiconductor device When the laser light is irradiated with high output in the manufacturing process for a semiconductor device, an attenuator is heated and cause a deformation due to the laser light scattered in the attenuator. As a result, the attenuation ratio of the attenuator fluc... | 10/21/2008 |
| 7439109 | Method of forming an integrated circuit structure on a hybrid crystal oriented substrate Disclosed is an integrated circuit structure that has a substrate having at least two types of crystalline orientations. First-type transistors (e.g., NFETs) are formed on first portions of the substrate having a first type of crystalline orientation, and second-typ... | 10/21/2008 |
| 7439108 | Coplanar silicon-on-insulator (SOI) regions of different crystal orientations and methods of making the same In a first aspect, a first method is provided for semiconductor device manufacturing. The first method includes the steps of (1) providing a substrate; and (2) forming a first silicon-on-insulator (SOI) region having a first crystal orientation, a second SOI region ... | 10/21/2008 |
| 7432149 | CMOS on SOI substrates with hybrid crystal orientations Methods and structures for CMOS devices with hybrid crystal orientations using double SOI substrates is provided. In accordance with preferred embodiments, a manufacturing sequence includes the steps of forming an SOI silicon epitaxy layer after the step of forming ... | 10/07/2008 |
