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| Number | Title | Issue Date |
| 8187926 | Method of manufacturing a semiconductor device There is provided a method of removing trap levels and defects, which are caused by stress, from a single crystal silicon thin film formed by an SOI technique. First, a single crystal silicon film is formed by using a typical bonding SOI technique such as Smart-Cut ... | 05/29/2012 |
| 8187927 | Liquid crystal display and fabrication method thereof A method for fabricating an LCD includes: providing a substrate with a thin film transistor (TFT) part defined thereon; forming a metallic film for a gate electrode on the substrate; etching the metallic film through a first printing process to form a gate electrode... | 05/29/2012 |
| 8183097 | Thin-film transistor substrate and method of manufacturing the same A thin-film transistor (TFT) substrate includes a semiconductor pattern, a conductive pattern, a first wiring pattern, an insulation pattern and a second wiring pattern. The semiconductor pattern is formed on a substrate. The conductive pattern is formed as a layer ... | 05/22/2012 |
| 8183098 | SOI device with contact trenches formed during epitaxial growing A method for manufacturing an integrated electronic device. The method includes providing an SOI substrate having a semiconductor substrate, an insulating layer on the semiconductor substrate, and a semiconductor starting layer on the insulating layer; epitaxially g... | 05/22/2012 |
| 8183099 | Method for manufacturing transistor A hydrogen barrier layer is selectively provided over an oxide semiconductor layer including hydrogen and hydrogen is selectively desorbed from a given region in the oxide semiconductor layer by conducting oxidation treatment, so that regions with different conducti... | 05/22/2012 |
| 8178398 | Manufacturing method of display device To improve a deposition rate of a microcrystalline semiconductor layer by using a deposition method and to improve productivity of a display device including a TFT of a microcrystalline semiconductor, a reactive gas containing helium is supplied to a treatment chamb... | 05/15/2012 |
| 8178397 | Field effect transistor A field effect transistor including a gate insulation portion, an organic semiconductor portion, a source electrode and a drain electrode, wherein when a voltage is applied to the gate at 70° C. for 5.0±0.1 hours so that the field strength in the gate insulation p... | 05/15/2012 |
| 8173493 | Thin film transistor array panel and fabrication The present invention provides a manufacturing method of a thin film transistor array panel, which includes forming a gate line on a substrate; forming a gate insulating layer, a semiconductor layer, and an ohmic contact on the gate line; forming a first conducting ... | 05/08/2012 |
| 8173494 | Thin film transistor array and method of manufacturing the same A thin film transistor array and method of manufacturing the same include a pixel electrode formed of a transparent conductive layer on a substrate, a gate line formed of the transparent conductive layer and an opaque conductive layer on the substrate, a gate electr... | 05/08/2012 |
| 8173492 | Method of manufacturing thin film transistor substrate Provided are a wire structure, a method of forming a wire, a thin film transistor (TFT) substrate, and a method of manufacturing the TFT substrate. The wire structure includes a barrier layer disposed on a lower structure, a copper conductive layer comprising copper... | 05/08/2012 |
| 8173495 | Semiconductor on insulator A method and apparatus for producing a relatively thin, relatively uniform semiconductor layer which has improved carrier mobility. In an embodiment, a lattice-matched insulator layer is formed on a semiconductor substrate, and a lattice-matched semiconductor layer ... | 05/08/2012 |
| 8168482 | Semiconductor device, an electronic device and an electronic apparatus A method for manufacturing a semiconductor device comprises preparing a base; forming a silicon oxide film including hydrogen or deuterium on the base; diffusing nitrogen into the silicon oxide film to form a gate insulating film; forming a gate electrode on the gat... | 05/01/2012 |
| 8168481 | Method of manufacturing SOI substrate The method of one embodiment of the present invention includes: a first step of irradiating a bond substrate with ions to form an embrittlement region in the bond substrate; a second step of bonding the bond substrate to a base substrate with an insulating layer the... | 05/01/2012 |
| 8158465 | Vertical coffee-stain method for forming self-organized line structures A “vertical” coffee-stain method for producing self-organized line structures and other very fine features that involves disposing a target structure in a solution made up of a fine particle solute dispersed in a liquid solvent such that a “waterline” is for... | 04/17/2012 |
| 8158463 | Process and method for manufacturing a MOS device with intercell ion implant using one or more parallel enrichment windows A process for manufacturing a MOS device includes forming a semiconductor layer having a first type of conductivity; forming an insulated gate structure having an electrode region (25), above the semiconductor layer (23); forming body regions having a ... | 04/17/2012 |
| 8158467 | Liquid crystal display device and method of fabricating the same A liquid crystal display device includes a plurality of gate lines and data lines on a first substrate defining a plurality of pixel regions, a thin film transistor within the pixel regions, a pixel electrode within the pixel regions, and at least one TiOx layer pro... | 04/17/2012 |
| 8158466 | Array substrate for display device and method of fabricating the same An array substrate including a substrate having a pixel region, a gate line and a gate electrode on the substrate, the gate electrode being connected to the gate line, a gate insulating layer on the gate line and the gate electrode, an oxide semiconductor layer on t... | 04/17/2012 |
| 8158464 | Method of manufacturing a liquid crystal display device with a semiconductor film including zinc oxide To provide a semiconductor device in which a defect or fault is not generated and a manufacturing method thereof even if a ZnO semiconductor film is used and a ZnO film to which an n-type or p-type impurity is added is used for a source electrode and a drain electro... | 04/17/2012 |
| 8143114 | System and method for source/drain contact processing System and method for reducing contact resistance and prevent variations due to misalignment of contacts is disclosed. A preferred embodiment comprises a non-planar transistor with source/drain regions located within a fin. An inter-layer dielectric overlies the non... | 03/27/2012 |
| 8143113 | Omega shaped nanowire tunnel field effect transistors fabrication A method for forming a nanowire tunnel field effect transistor device includes forming a nanowire connected to a first pad region and a second pad region, the nanowire including a core portion and a dielectric layer, forming a gate structure on the dielectric layer ... | 03/27/2012 |
| 8138029 | Structure and method having asymmetrical junction or reverse halo profile for semiconductor on insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) A device and method is provided that in one embodiment provides a first semiconductor device including a first gate structure on a first channel region, in which a first source region and a first drain region are present on opposing sides of the first channel region... | 03/20/2012 |
| 8124464 | Semiconductor device and method for manufacturing the same This disclosure concerns a semiconductor device comprising a convex-shaped semiconductor layer formed on a semiconductor substrate; an insulation film formed on the semiconductor substrate, the insulation film having a film thickness to the extent that a lower part ... | 02/28/2012 |
| 8124463 | Local bottom gates for graphene and carbon nanotube devices Transistor devices having nanoscale material-based channels and techniques for the fabrication thereof are provided. In one aspect, a transistor device includes a substrate; an insulator on the substrate; a gate embedded in the insulator with a top surface of the ga... | 02/28/2012 |
| 8119463 | Method of manufacturing thin film transistor and thin film transistor substrate Provided is a method of manufacturing a thin film transistor that can improve self-alignment. In this method, a semiconductor layer comprising a first doped region, a second doped region and a channel region is formed on a sacrificial layer on a first substrate. Nex... | 02/21/2012 |
| 8119462 | Method for forming conductive film, thin-film transistor, panel with thin-film transistor, and method for manufacturing thin-film transistor A conductive film having high adhesion and low specific resistance is formed. A target containing copper as a main component is sputtered in vacuum ambience while an oxygen gas introduced, and then, a conductive film containing copper as a main component and additiv... | 02/21/2012 |
| 8114719 | Memory device and manufacturing method of the same An easy-to-use and inexpensive memory device is provided while maintaining product specifications and productivity even when a memory is formed on the same substrate as other functional circuits. The memory device of the invention includes a memory cell formed on an... | 02/14/2012 |
| 8114721 | Method of controlling gate thickness in forming FinFET devices A method of forming a FinFET device is provided. In one embodiment, a fin is formed on a substrate. A gate structure is formed over the fin, the gate structure having a dielectric layer and a conformal first polysilicon layer formed above the dielectric layer. An et... | 02/14/2012 |
| 8114720 | Semiconductor device and manufacturing method thereof An object is to reduce a capacitance value of parasitic capacitance without decreasing driving capability of a transistor in a semiconductor device such as an active matrix display device. Further, another object is to provide a semiconductor device in which the cap... | 02/14/2012 |
| 8088652 | Electron device using oxide semiconductor and method of manufacturing the same In an electron device in which plural thin film transistors each having at least a source electrode, a drain electrode, a semiconductor region including a channel, a gate insulation film and a gate electrode are provided on a substrate, a device separation region pr... | 01/03/2012 |
| 8084307 | Method for manufacturing thin film transistor A method for manufacturing a thin film transistor containing an channel layer 11 having indium oxide, including forming an indium oxide film as an channel layer and subjecting the formed indium oxide film to an annealing in an oxidizing atmosphere. ... | 12/27/2011 |
| 8084306 | Methods of forming semiconductor devices having self-aligned bodies A semiconductor device includes a body region having a source region, a drain region, a channel region interposed between the source region and the drain region, and a body region extension extending from an end of the channel region. A gate pattern is formed on the... | 12/27/2011 |
| 8084305 | Isolation spacer for thin SOI devices A semiconductor device comprises a semiconductor mesa overlying a dielectric layer, a gate stack formed overlying the semiconductor mesa, and an isolation spacer formed surrounding the semiconductor mesa and filling any undercut region at edges of the semiconductor ... | 12/27/2011 |
| 8080450 | Method of manufacturing semiconductor thin film On a translucent substrate, an insulating film having a refractive index n and an amorphous silicon film are deposited successively. By irradiating the amorphous silicon film with a laser beam having a beam shape of a band shape extending along a length direction wi... | 12/20/2011 |
| 8080451 | Fabricating semiconductor structures Solutions for fabricating a semiconductor structure. One embodiment includes a method for fabricating a semiconductor structure, the method including: forming a first dielectric structure on a substrate, the first dielectric structure including silicon nitride (Si | 12/20/2011 |
| 8071432 | Organic transistor active substrate, manufacturing method thereof, and electrophoretic display A method of manufacturing an organic transistor active substrate is disclosed. The organic transistor active substrate includes an organic transistor in which a first electrode is formed on a substrate, a first insulating film is formed on the first electrode, a pai... | 12/06/2011 |
| 8067276 | Semiconductor device and manufacturing method thereof An oxide or nitride semiconductor layer is formed over a substrate. A first conductive layer including a first element and a second element, and a second conductive layer including the second element are formed over the semiconductor layer. The first element is oxid... | 11/29/2011 |
| 8067277 | Active matrix device with photo sensor An active matrix pixel device is provided, for example an electroluminescent display device, the device comprising circuitry supported by a substrate and including a polysilicon TFT (10) and an amorphous silicon thin film PIN diode (12). Polysilicon is... | 11/29/2011 |
| 8067278 | Semiconductor device and method for manufacturing the same A semiconductor device includes at least one thin film transistor including a semiconductor layer that has a crystalline region including a channel region, a source region and a drain region, a gate insulating film disposed at least on the channel region, the source... | 11/29/2011 |
| 8062935 | Semiconductor device and method for manufacturing the same A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, p... | 11/22/2011 |
| 8062936 | Method of fabricating array substrate A method of fabricating an array substrate for a display device includes steps of forming a gate line and a gate electrode on a substrate, forming a gate insulating layer and an intrinsic amorphous silicon layer, forming an oxide semiconductor layer, increasing a co... | 11/22/2011 |
