Class 438/144 - Charge transfer device (e.g., CCD, etc.)

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Process for making a structure in which storage sites for
No. of patents: 155
Last issue date: 02/14/2012

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Number	Title	Issue Date
8114718	Antiblooming imaging apparatus, systems, and methods Apparatus, systems, and methods are described to assist in reducing dark current in an active pixel sensor. In various embodiments, a potential barrier arrangement is configured to block the flow of charge carriers generated outside a photosensitive region. In vario...	02/14/2012
8053287	Method for making multi-step photodiode junction structure for backside illuminated sensor A method of making a backside illuminated sensor is provided. A substrate is provided and a high energy ion implantation is performed over the substrate to implant a first doped region. A layer is formed over the substrate and a self-align high energy ion implantati...	11/08/2011
7964451	Solid state imaging device and method for fabricating the same A first oxide film (102) is formed on a semiconductor substrate (101). A first nitride film (103) is formed on first gate electrode formation regions of the first oxide film (102). A plurality of first gate electrodes (104) are pro...	06/21/2011
7851275	Pixel of image sensor and method for fabricating the same A pixel of an image sensor includes a polysilicon layer, and an active region which needs to be electrically coupled with the polysilicon layer, wherein the polysilicon layer extends over a portion of the active region, such that the polysilicon layer and the active...	12/14/2010
7838344	Method for manufacturing a charge coupled device A method for manufacturing a semiconductor device includes steps of forming an embedded channel 12 in a semiconductor substrate 11, forming a resist layer on the embedded channel 12 through an oxide film 14, exposing the resist layer usin...	11/23/2010
7829393	Copper gate electrode of liquid crystal display device and method of fabricating the same A copper gate electrode, applied in a thin-film-transistor liquid crystal display (LCD) device, at least comprises a patterned copper layer formed on a glass substrate, and a barrier layer formed on the patterned copper layer. The barrier layer comprises at least on...	11/09/2010
7776661	Nano-electromechanical circuit using co-planar transmission line A co-planar waveguide structure is integrated with an upwardly extending resonant pillar to produce transfer cells that provide controlled transmission of electricity between adjacent structures of the co-planar waveguide in order to produce easily fabricated electr...	08/17/2010
7585707	Low dark current image sensors with epitaxial SiC and/or carbonated channels for array transistors A pixel cell having a substrate with a isolation channel formed of higher carbon concentrate such as SiC or carbonated silicon. The channel comprising SiC or carbonated silicon is provided over the substrate of the pixel cell to reduce the dark current leakage. ...	09/08/2009
7394117	Fin field effect transistors including epitaxial fins A method of forming a fin field effect transistor on a semiconductor substrate includes forming an active region in the substrate, forming an epitaxial layer on the active region, and removing a portion of the epitaxial layer to form a vertical fin on the active reg...	07/01/2008
7382003	Solid-state image pick-up unit and method of manufacturing the same A solid-state image pick-up unit comprises: a semiconductor substrate comprising an area in which a photoelectric converting portion is formed; and an electric charge transfer portion that transfers an electric charge formed by the photoelectric converting portion, ...	06/03/2008
7361519	Method of manufacturing a semiconductor device A method of manufacturing a semiconductor device, comprises the steps of: forming a first insulating film on a first substrate; forming a second insulating film on the first insulating film; forming an amorphous silicon film on the second insulating film; holding a ...	04/22/2008
7323375	Fin field effect transistor device and method of fabricating the same Methods of forming field effect transistors (FETs) having fin-shaped active regions include patterning a semiconductor substrate to define a fin-shaped semiconductor active region therein, which is surrounded by a trench. At least an upper portion of the fin-shaped ...	01/29/2008
7314775	IT-CCD and manufacturing method thereof The present invention provides a power-thrifty IT-CCD having a charge transfer electrode area thinned for improving the light reception efficiency of a photoelectric conversion section and being capable of executing high-speed and high-sensitivity transfer without l...	01/01/2008
7279766	Photodiode sensor and photosensor for use in an imaging device A multiple-trench photosensor for use in a CMOS imager having an improved charge capacity. The multi-trench photosensor may be either a photogate or photodiode structure. The multi-trench photosensor provides the photosensitive element with an increased surface area...	10/09/2007
7232712	CMOS image sensor and method for fabricating the same A CMOS image sensor and a method for fabricating the same is disclosed, to decrease a darkcurrent generated in the boundary between a diffusion area of a photodiode and a device isolation layer, which includes a first conductive type semiconductor substrate having a...	06/19/2007
7232697	Semiconductor device having enhanced photo sensitivity and method for manufacture thereof Provided are a semiconductor device and a method for its manufacture. In one example, the method includes forming an isolation structure having a first refraction index over a sensor embedded in a substrate. A first layer having a second refraction index that is dif...	06/19/2007
7217601	High-yield single-level gate charge-coupled device design and fabrication In accordance with the invention, an electrically conducting charge transfer channel is formed in a semiconductor substrate and an electrically insulating layer is formed on a surface of the substrate; a layer of gate electrode material is formed on the insulating l...	05/15/2007
7214571	Electromechanical electron transfer devices An electron transfer device is implemented in a structure which is readily capable of achieving charge transfer cycle frequencies in the range of several hundred MHz or more and which can be formed by conventional semiconductor integrated circuit manufacturing proce...	05/08/2007
7189635	Reduction of a feature dimension in a nano-scale device Nano-scale devices and methods provide reduced feature dimensions of features on the devices. A surface of a device substrate having a pattern of spaced apart first nanowires is consumed, such that a dimension of the first nanowires is reduced. A second nanowire is ...	03/13/2007
7186595	Solid picture element manufacturing method A solid picture element that transfers charges completely from a photodiode portion to an amplifying transistor portion to substantially eliminate residual images and methods of its manufacture are disclosed. The solid picture element includes a buried photodiode an...	03/06/2007
7186381	Hydrogen gas sensor A hydrogen gas sensor and/or switch fabricated from arrays nanowires composed of metal or metal alloys that have stable metal hydride phases. The sensor and/or switch response times make it quite suitable for measuring the concentration of hydrogen in a flowing gas ...	03/06/2007
7179676	Manufacturing CCDs in a conventional CMOS process A technique for forming Charge-Coupled Devices (CCDs) in a conventional Complementary Metal Oxide Semiconductor (CMOS) process. A number of single-layer polysilicon gates are formed on an as-grown, native doped silicon substrate, with gaps between them. Masking is u...	02/20/2007
7176067	Methods of fabricating fin field effect transistors A method of forming a fin field effect transistor on a semiconductor substrate includes forming an active region in the substrate, forming an epitaxial layer on the active region, and removing a portion of the epitaxial layer to form a vertical fin on the active reg...	02/13/2007
7154134	Adjustable CCD charge splitter An adjustable charge coupled device (CCD) charge splitter includes a channel control structure and an associated plurality of output channels. Control signals applied to the channel control structure determine an amount of charge, which passes into each one of the p...	12/26/2006
7125740	Solid-state image pickup device and fabrication method thereof A method of fabricating a solid-state image pickup device comprising forming mask patterns corresponding to patterns of first and third transfer electrodes, which are to be alternately arranged in each vertical transfer register formation region and which are to ext...	10/24/2006
7098066	Charge coupled device producing method A charge coupled device of the present invention includes a charge transfer region layer and a gate insulation film that are formed in the stated order on a semiconductor substrate, first gate electrodes formed at predetermined spaces on the gate insulation film, an...	08/29/2006
7098481	Semiconductor device In a semiconductor device having a plurality of thin film transistors and matrix wiring lines formed on a substrate, the matrix wiring lines are electrically connected via resistors in order to prevent electrostatic destructions during a panel manufacture process an...	08/29/2006
7081770	Multiple testing bars for testing liquid crystal display and method thereof A plurality of gate lines are formed on an insulating substrate in the horizontal direction, a gate shorting bar connected to the data lines is formed in the vertical direction and a gate insulating film is formed thereon. A plurality of data lines intersecting the ...	07/25/2006
7075108	Thin film transistor matrix device A thin film transistor matrix device including an insulating substrate, a plurality of thin film transistors arranged on the insulating substrate, and a plurality of picture element electrodes arranged on the insulating substrate in a matrix and connected to the thi...	07/11/2006
7061030	Semiconductor device, a manufacturing method thereof, and a camera A semiconductor device includes a transfer channel for transferring charge generated by photoelectric conversion, an insulating film formed on the transfer channel, and a transfer electrode for applying a transfer voltage to the transfer channel via the insulating f...	06/13/2006
7052929	Solid state image pickup device capable of suppressing smear A driving method for a solid state image pickup device, having four or more transfer stages as one transfer unit, includes reading signal charge from the charge accumulation regions to the vertical charge transfer channels. The reading step includes (b-1) applying t...	05/30/2006
7049167	CMOS image sensor having test pattern therein and method for manufacturing the same The method for manufacturing a test pattern for use in a CMOS image sensor is employed to measure a sheet resistivity of each ion implantation region, respectively. The method includes steps of: forming an FOX area on a semiconductor substrate so as to define an act...	05/23/2006
7029944	Methods of forming a microlens array over a substrate employing a CMP stop A method of forming a microlens structure is provided along with a CCD array structure employing a microlens array. An embodiment of the method comprises providing a substrate having a surface with photo-elements on the surface; depositing a transparent material ove...	04/18/2006
6998657	Single poly CMOS imager More complete charge transfer is achieved in a CMOS or CCD imager by reducing the spacing in the gaps between gates in each pixel cell, and/or by providing a lightly doped region between adjacent gates in each pixel cell, and particularly at least between the charge...	02/14/2006
6995795	Method for reducing dark current A method for reducing dark current within an image sensor includes applying, at a first time period, a first set of voltages to the phases of gate electrodes of vertical shift registers sufficient to accumulate holes of the vertical shift register, beneath each gate...	02/07/2006
6979588	Method for manufacturing CMOS image sensor having microlens therein with high photosensitivity The method for manufacturing a CMOS image sensor is employed to prevent bridge phenomenon between adjacent microlenses by employing openings between the microlenses. The method includes the steps of: preparing a semiconductor substrate including isolation regions an...	12/27/2005
6946702	Resistance random access memory The present invention provides a resistance random access memory structure, including a plurality of word lines in a substrate, a plurality of reset lines coupled to the word lines, a dielectric layer on the substrate, a plurality of memory units in the dielectric l...	09/20/2005
6927088	Electrooptical substrate device and manufacturing method for same, electrooptical apparatus, electronic apparatus and manufacturing method for a substrate device An electrooptical substrate device has pixel electrodes and pixel-switching TFTs connected thereto, on a substrate. The TFT is a P-channel TFT of an SOI structure that does not have a body contact. Due to this, a transistor is architected in each pixel that is suite...	08/09/2005
6924233	Phosphor deposition methods Methods of coating a semiconductor device with phosphor particles are disclosed. In the methods, a bath is provided which contains suspended particles of a first phosphor material and suspended particles of a second phosphor material. The particles of the first phos...	08/02/2005
6858460	Retrograde well structure for a CMOS imager A retrograde well structure for a CMOS imager that improves the quantum efficiency and signal-to-noise ratio of the imager. The retrograde well comprises a doped region with a vertically graded dopant concentration that is lowest at the substrate surface, and highes...	02/22/2005

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Class 438/144 - Charge transfer device (e.g., CCD, etc.)