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| Number | Title | Issue Date |
| 8133769 | Methods for gettering in semiconductor substrate A method for forming gettering sites and gettering impurities in a substrate layer includes producing a first masking layer over the substrate layer and patterning the masking layer to define openings at locations where trenches will be formed in the substrate layer... | 03/13/2012 |
| 8119461 | Reducing the creation of charge traps at gate dielectrics in MOS transistors by performing a hydrogen treatment By performing a heat treatment on the basis of a hydrogen ambient, exposed silicon-containing surface portions may be reorganized prior to the formation of gate dielectric materials. Hence, the interface quality and the material characteristics of the gate dielectri... | 02/21/2012 |
| 8110451 | Method for manufacturing light emitting device A method for manufacturing a light emitting device, includes: forming a first multilayer body including a first substrate, a first semiconductor layer provided on the first substrate and having a light emitting layer, and a first metal layer provided on the first se... | 02/07/2012 |
| 8080449 | Method for manufacturing thin-film transistors Gate electrodes are formed on a substrate. A gate insulation film is formed so as to cover the gate electrodes. A semiconductor layer is formed in regions on the gate insulation film in a region which overlap with at least the gate electrodes. Plasma treatment is ap... | 12/20/2011 |
| 7993987 | Surface cleaning using sacrificial getter layer A method includes providing a substrate including a non-insulative, silicon-including region for silicidation, the substrate including one or more contaminants at a top surface thereof. A getter layer is deposited over the non-insulative, silicon-including region, t... | 08/09/2011 |
| 7763500 | Method for manufacturing semiconductor storage device comprising a slow cooling step First, a base structure provided with the main parts of a memory cell is prepared, and a lower electrode comprising a polycrystalline silicon film is thereafter formed on the base structure. Next, the surface of the lower electrode is thermally nitrided at a predete... | 07/27/2010 |
| 7494851 | Thin film transistor array substrate and method for manufacturing the same A thin film transistor array substrate and a method for manufacturing the same is disclosed, in which it is possible to prevent mobile ions contained in a substrate from penetrating into a semiconductor layer by the gettering effect or neutralization in case soda li... | 02/24/2009 |
| 7359042 | Inspection system for limited access spaces A limited access space inspection system comprising: an imaging device for imaging a region in the limited access space, a mounting for mounting the imaging device to scan about the limited access space and a scanning control unit, associated with the imaging device... | 04/15/2008 |
| 7348249 | Method for manufacturing semiconductor device A method for manufacturing a semiconductor device reduces or prevents copper contamination. The method includes forming a gate electrode on a substrate; forming a first oxide layer on a front surface of the substrate including the gate electrode; depositing a nitrid... | 03/25/2008 |
| 7326597 | Gettering using voids formed by surface transformation One aspect of this disclosure relates to a method for creating a gettering site in a semiconductor wafer. In various embodiments, a predetermined arrangement of a plurality of holes is formed in the semiconductor wafer through a surface of the wafer. The wafer is an... | 02/05/2008 |
| 7327019 | Semiconductor device of a charge storage type According to the present invention, a gettering layer is deposited both on the side surfaces and the bottom surface of a semiconductor chip. The semiconductor chip is then mounted on the board of a package so that a Schottky barrier is formed on the bottom surface. ... | 02/05/2008 |
| 7319378 | Anti-theft system for a vehicle with real-time notification feature A comprehensive vehicle anti-theft and alarm system that immediately notifies a vehicle owner when a vehicle is being tampered with. Notification is accomplished via wireless signal to the owners' cell phone, personal digital assistant (PDA), laptop or desktop compu... | 01/15/2008 |
| 7297630 | Methods of fabricating via hole and trench A method of fabricating a via and a trench is disclosed. A disclosed method comprises: forming a via hole and a trench in a interlayer dielectric layer on a semiconductor substrate where a predetermined device is formed; depositing a thin Hf layer on the substrate; ... | 11/20/2007 |
| 7297927 | Fabrication of low leakage-current backside illuminated photodiodes Ultra-low leakage current backside-illuminated semiconductor photodiode arrays are fabricated using a method of formation of a transparent, conducting bias electrode layer that avoids high-temperature processing of the substrate after the wafer has been gettered. As... | 11/20/2007 |
| 7285825 | Element formation substrate for forming semiconductor device A support-side substrate having a thermal oxide film on the major surface is bonded to an active-layer-side substrate having a thermal oxide film on the major surface while making the major surfaces oppose each other. The active-layer-side substrate and part of the ... | 10/23/2007 |
| 7285449 | Semiconductor device manufacture method including process of implanting impurity into gate electrode independently from source /drain and semiconductor device manufactured by the method A gate electrode made of semiconductor is formed on the partial surface area of a semiconductor substrate. A mask member is formed on the surface of the semiconductor substrate in an area adjacent to the gate electrode. Impurities are implanted into the gate electro... | 10/23/2007 |
| 7279194 | Thin film formation apparatus and method of manufacturing self-light-emitting device using thin film formation apparatus A means of effectively applying an organic EL material application liquid with good application liquid cut-off is provided. A heater and an ultrasonic oscillator are formed in a thin film formation apparatus when applying the application liquid, and heat and ultraso... | 10/09/2007 |
| 7268048 | Methods for elimination of arsenic based defects in semiconductor devices with isolation regions Methods of preparing conductive regions such as source/drain regions for silicidation procedures, has been developed. The methods feature removal of native oxide as well as removal of deposited arsenic based defects from conductive surfaces prior to deposition of a ... | 09/11/2007 |
| 7259072 | Shallow low energy ion implantation into pad oxide for improving threshold voltage stability A method is described to fabricate a MOSFET device with increased threshold voltage stability. After the pad oxide and pad nitride are deposited on the silicon substrate and shallow trenches are patterned and the pad nitride removed. As+ or P+ ... | 08/21/2007 |
| 7256087 | Techniques for improving negative bias temperature instability (NBTI) lifetime of field effect transistors In one embodiment, an integrated circuit includes a PMOS transistor having a gate stack comprising a P+ doped gate polysilicon layer and a nitrided gate oxide (NGOX) layer. The NGOX layer may be over a silicon substrate. The integrated circuit further includes an in... | 08/14/2007 |
| 7198992 | Method of manufacturing a semiconductor device comprising doping steps using gate electrodes and resists as masks The present invention is characterized in that a semiconductor film containing a rare gas element is formed on a crystalline semiconductor film obtained by using a catalytic element via a barrier layer, and the catalytic element is moved from the crystalline semicon... | 04/03/2007 |
| 7192813 | Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. An amorphous semiconductor thin film is irradiated with ultraviolet light or infrared light, to obtain a crystalline semiconduct... | 03/20/2007 |
| 7183179 | System and method for hydrogen exfoliation gettering A hydrogen (H) exfoliation gettering method is provided for attaching fabricated circuits to receiver substrates. The method comprises: providing a Si substrate; forming a Si active layer overlying the substrate with circuit source/drain (S/D) regions; implanting a ... | 02/27/2007 |
| 7166505 | Method for making a semiconductor device having a high-k gate dielectric A method for making a semiconductor device is described. That method includes forming on a substrate a dielectric layer that has a dielectric constant that is greater than the dielectric constant of silicon dioxide. The dielectric layer is modified so that it will b... | 01/23/2007 |
| 7148093 | Semiconductor device and method for manufacturing the same A semiconductor device includes at least one thin film transistor including a semiconductor layer that has a crystalline region including a channel region, a source region and a drain region, a gate insulating film disposed at least on the channel region, the source... | 12/12/2006 |
| 7148558 | Versatile system for limiting mobile charge ingress in SOI semiconductor structures Disclosed are apparatus and method for limiting mobile charge (314) ingress within a silicon-on-insulator (SOI) substrate (300). A mask (308) is applied to the substrate to form an aperture (210) over a desired portion of the substrate ne... | 12/12/2006 |
| 7147530 | Electroluminescence display device and method of manufacturing the same An object of the present invention is to provide an EL display device, which has a high operating performance and reliability. A third passivation film 45 is disposed so as to be in contact with an EL element 203 which comprises a pixel electrode (anod... | 12/12/2006 |
| 7144829 | Method for fabricating semiconductor device and semiconductor substrate A first thermal treatment, which is performed at a temperature within 650–750° C. for 30–240 minutes, and thereafter a second thermal treatment, which is performed at a temperature within 900–1100° C. for 30–120 minutes, are performed as the initial therma... | 12/05/2006 |
| 7135351 | Method for controlling of thermal donor formation in high resistivity CZ silicon The present invention is directed to a single crystal Czochralski-type silicon wafer, and a process for the preparation thereof, which has at least a surface layer of high resistivity, the layer having an interstitial oxygen content which renders it incapable of for... | 11/14/2006 |
| 7134179 | Process of forming a capacitative audio transducer A process of forming a capacitive audio transducer, preferably having an all-silicon monolithic construction that includes capacitive plates defined by doped single-crystal silicon layers. The capacitive plates are defined by etching the single-crystal silicon layer... | 11/14/2006 |
| 7126194 | Method for removing impurities of a semiconductor wafer, semiconductor wafer assembly, and semiconductor device On a silicon layer of an SOI wafer is defined a semiconductor device-forming region to form semiconductor devices thereon and an insulating region to electrically insulate the semiconductor device-forming region. Then, a mask layer is formed of nitride by means of p... | 10/24/2006 |
| 7115434 | Method for precisely forming light emitting layers in a semiconductor device There is provided a method for precisely forming light emitting layers in a semiconductor device without a positional deviation and at a high throughput. A pixel portion is divided into a plurality of signal lines by banks, and a coating liquid (R), a coating liquid... | 10/03/2006 |
| 7109108 | Method for manufacturing semiconductor device having metal silicide A thin film transistor device reduced substantially in resistance between the source and the drain by incorporating a silicide film, which is fabricated by a process comprising forming a gate insulator film and a gate contact on a silicon substrate, anodically oxidi... | 09/19/2006 |
| 7103869 | Method of verifying IC mask sets A method of fabricating an IC includes forming a test circuit in/on the wafer to electrically indicate that a correct mask set was used during a revision of the IC design during the manufacturing process. The readout of the circuit enables the manufacturer to immedi... | 09/05/2006 |
| 7098098 | Methods for transistors formation using selective gate implantation Methods are disclosed for semiconductor device fabrication in which dopants are selectively implanted into transistor gate structures to counteract or compensate for dopant depletion during subsequent fabrication processing. A patterned implant mask is formed over a... | 08/29/2006 |
| 7084048 | Process for metallic contamination reduction in silicon wafers A process for removing a contaminant selected from among copper, nickel, and a combination thereof from a silicon wafer having a surface and an interior. The process comprises cooling the silicon wafer in a controlled atmosphere from a temperature at or above an oxi... | 08/01/2006 |
| 7075002 | Thin-film photoelectric conversion device and a method of manufacturing the same A method of manufacturing a thin-film solar cell, comprising the steps of: forming an amorphous silicon film on a substrate; placing a metal element that accelerates the crystallization of silicon in contact with the surface of the amorphous silicon film; subjecting... | 07/11/2006 |
| 7056814 | Methods of manufacturing a MOS transistor Methods of manufacturing MOS transistors which are capable of suppressing a short channel effect are disclosed. The short channel effect is suppressed by forming source/drain regions of a shallow junction and sufficiently doping a gate. An illustrated method include... | 06/06/2006 |
| 7049183 | Semiconductor film, method for manufacturing semiconductor film, semiconductor device, and method for manufacturing semiconductor device A method of the present invention includes the steps of forming an amorphous semiconductor layer on an insulative surface, adding a catalyst element capable of promoting crystallization to the amorphous semiconductor layer and then performing a first heat treatment ... | 05/23/2006 |
| 7045418 | Semiconductor device including a dielectric layer having a gettering material located therein and a method of manufacture therefor The present invention provides a semiconductor device (200), a method of manufacture therefor and an integrated circuit including the same. In one embodiment of the invention, the semiconductor device (200) includes a floating gate (230) located... | 05/16/2006 |
