Quotables
"There is no likelihood man can ever tap the power of the atom."
Robert Millikan, Nobel Prize winner in physics
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8143112 | Method for removing semiconductor street material Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced p... | 03/27/2012 |
| 8133768 | Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic diodes. The exemplary method includes depositing a first conductive mediu... | 03/13/2012 |
| 8084304 | Method for preventing gate oxide damage of a trench MOSFET during wafer processing while adding an ESD protection module atop A method for preventing gate oxide damage of a trench MOSFET during wafer processing while adding an ESD protection module atop the trench MOSFET includes fabricate numerous trench MOSFETs on a wafer; add a Si3N4 isolation layer, capable of preventing the LTO patter... | 12/27/2011 |
| 8058111 | Integrated circuit arrangement comprising a pin diode, and production method An integrated circuit arrangement includes a pin photodiode and a highly doped connection region of a bipolar transistor. A production method produces an intermediate region of the pin diode with a large depth and without auto-doping in a central region. ... | 11/15/2011 |
| 8039324 | Image sensor and method of fabricating the same An image sensor includes a semiconductor substrate, a photodiode formed in the semiconductor substrate, a first impurity region formed in the semiconductor substrate spaced from the photodiode, a second impurity region formed in the semiconductor substrate spaced fr... | 10/18/2011 |
| 7915097 | Electronic module with conductivity transformation region, method of manufacture and applications thereof This publication concerns electronics modules comprising at least one first material zone formed of first material which can be structurally transformed by means of electric interaction in order to increase its conductivity at least locally, the first material havin... | 03/29/2011 |
| 7687322 | Method for removing semiconductor street material Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced p... | 03/30/2010 |
| 7687323 | Surface-roughening method The method is disclosed as applied to roughening the light-emitting surface of an LED wafer for reduction of the internal total reflection of the light generated. A masking film of silver is first deposited on the surface of a wafer to be diced into LED chips. Then ... | 03/30/2010 |
| 7585705 | Method for preventing gate oxide damage of a trench MOSFET during wafer processing while adding an ESD protection module atop A method and device structure are disclosed for preventing gate oxide damage of a trench MOSFET during wafer processing while adding an ESD protection module atop the trench MOSFET. The ESD protection module has a low temperature oxide (LTO) bottom layer whose patte... | 09/08/2009 |
| 7582515 | Multi-junction solar cells and methods and apparatuses for forming the same Embodiments of the present invention generally relate to solar cells and methods and apparatuses for forming the same. More particularly, embodiments of the present invention relate to thin film multi-junction solar cells and methods and apparatuses for forming the ... | 09/01/2009 |
| 7569432 | Method of manufacturing an LED A method of manufacturing an LED of high reflectivity includes forming a substrate; depositing an n-type GaN layer on the substrate; depositing an active layer on a first portion of the n-type GaN layer; attaching an n-type metal electrode to a second portion of the... | 08/04/2009 |
| 7547587 | Method for manufacturing semiconductor light emitting device A laminated structure having light-emitting units is formed on a single-crystal wafer. Electrode patterns are formed on the single-crystal wafer opposite the light-emitting units. Dummy patterns are formed on the single-crystal wafer at a location spaced apart from ... | 06/16/2009 |
| 7544545 | Trench polysilicon diode Embodiments of the present invention include a method of manufacturing a trench polysilicon diode. The method includes forming a N−(P−) type epitaxial region on a N+(P+) type substrate and forming a trench in the N−(P−) type epitaxial region. The method furt... | 06/09/2009 |
| 7528017 | Method of manufacturing complementary diodes Process variation-tolerant diodes and diode-connected thin film transistors (TFTs), printed or patterned structures (e.g., circuitry) containing such diodes and TFTs, methods of making the same, and applications of the same for identification tags and sensors are di... | 05/05/2009 |
| 7494850 | Ultra-thin logic and backgated ultra-thin SRAM Disclosed are embodiments of a structure that comprises a first device, having multiple FETs, and a second device, having at least one FET. Sections of a first portion of a semiconductor layer below the first device are doped and contacted to form back gates. A seco... | 02/24/2009 |
| 7470569 | OLED display manufacturing method with uniformity correction A method for manufacturing and grading OLED devices comprising the steps of: a) manufacturing OLED devices having a plurality of pixels with inherent pixel brightnesses and uniformity variation; b) measuring inherent pixel brightnesses and uniformity variation perfo... | 12/30/2008 |
| 7442974 | Image sensor with inter-pixel isolation An image sensor with a plurality of photodiodes that each have a first region constructed from a first type of material and a second region constructed from a second type of material. Located adjacent to the first region and between second regions of adjacent photod... | 10/28/2008 |
| 7368331 | Manufacturing method of thin-film transistor, thin-film transistor sheet, and electric circuit A thin-film transistor, a thin-film transistor sheet, an electric circuit, and a manufacturing method thereof are disclosed, the method comprising the steps of forming a semiconductor layer by providing a semiconductive material on a substrate, b) forming an isolati... | 05/06/2008 |
| 7341886 | Apparatus and method for forming vias A method and apparatus for forming vias in one or more layers, comprising providing a vacuum chamber, one or more beams in the vacuum chamber. The array of directed beams located in alignment with a layer for ablating one or more areas of the layer for forming vias.... | 03/11/2008 |
| 7342288 | Thin film transistor, liquid crystal display apparatus, manufacturing method of thin film transistor, and manufacturing method of liquid crystal display apparatus A manufacturing method of a thin film transistor of the present invention includes the steps of (i) forming an electrode formation area in which a source electrode and a drain electrode are formed by applying a droplet of an electrode raw material, (ii) applying the... | 03/11/2008 |
| 7326585 | Forming process of thin film pattern and manufacturing process of device, electro-optical apparatus and electronic apparatus The invention provides a forming process of a thin film pattern capable of properly realizing a thin line. The forming process of a thin film pattern of the invention can be a process of forming a thin film pattern by arranging a functional liquid on a substrate P. ... | 02/05/2008 |
| 7323348 | Superconducting integrated circuit and method for fabrication thereof A superconducting integrated circuit includes a substrate, a multilayer structure formed on the substrate and composed of a lower superconducting electrode, a tunnel barrier and an upper superconducting electrode sequentially joined together upward in the order ment... | 01/29/2008 |
| 7265002 | Method for making a semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channel A method for making a semiconductor device may include providing a substrate, and forming at least one MOSFET adjacent the substrate by forming a superlattice including a plurality of stacked groups of layers and a semiconductor cap layer on an uppermost group of la... | 09/04/2007 |
| 7253549 | Thermionic vacuum diode device with adjustable electrodes In accordance with one embodiment of the present invention, a Gap Diode is disclosed in which a tubular actuating element serves as both a housing for a pair of electrodes and as a means for controlling the separation between the electrode pair. In a preferred embod... | 08/07/2007 |
| 7238976 | Schottky barrier rectifier and method of manufacturing the same A Schottky barrier rectifier, in accordance with embodiments of the present invention, includes a first conductive layer and a semiconductor. The semiconductor includes a first doped region, a second doped region and a plurality of third doped regions. The second do... | 07/03/2007 |
| 7214570 | Encapsulating a device An encapsulation for an electrical device is disclosed. A cap support is provided in the non-active regions of the device to prevent the package from contacting the active components of the device due to mechanical stress induced in the package. ... | 05/08/2007 |
| 7208351 | Electronic device and method of manufacture the same An electronic device, in which a flat plate semiconductor and dumets connected to surface electrodes on the front and back surfaces of the semiconductor and to lead wires are encapsulated in a glass tube. ... | 04/24/2007 |
| 7187059 | Compressive SiGe <110> growth and structure of MOSFET devices A structure for conducting carriers and method for forming is described incorporating a single crystal substrate of Si or SiGe having an upper surface in the and a psuedomorphic or epitaxial layer of SiGe having a concentration of Ge different than the substra... | 03/06/2007 |
| 7186611 | High-density germanium-on-insulator photodiode array A high-density Germanium (Ge)-on-Insulator (GOI) photodiode array and corresponding fabrication method are provided. The method includes: forming an array of pixel driver nMOST devices, each device having a gate connected to a row line in a first orientation, a firs... | 03/06/2007 |
| 7186380 | Transistor and sensors made from molecular materials with electric dipoles A polarization-dependent device is provided that includes organic materials having electric dipoles. The polarization-dependent device comprises: (a) a source region and a drain region separated by a channel region having a length L, formed on a substrate; (b) a die... | 03/06/2007 |
| 7166499 | Method of fabricating a thin film transistor for an array panel A method for making a thin film transistor, TFT, (306) on a substrate includes a photolithographic process step of patterning three layers of materials to form a TFT (306) and to form a bridging structure (308) crossing over a TFT gate bus-line ... | 01/23/2007 |
| 7120338 | Tuning the index of a waveguide structure The index of refraction of waveguide structures can be varied by altering carrier concentration. The waveguides preferably comprise semiconductors like silicon that are substantially optically transmissive at certain wavelengths. Variation of the carrier density in ... | 10/10/2006 |
| 7105877 | Conductive line structure A conductive line Structure. In one embodiment of the invention, a conductive line includes at least two outer conductive portions, an inner conductive portion between the outer conductive portions, separated from the outer conductive portions by at least two trench... | 09/12/2006 |
| 7101739 | Method for forming a schottky diode on a silicon carbide substrate A method for manufacturing a vertical Schottky diode with a guard ring on a lightly-doped N-type silicon carbide layer, including forming a P-type epitaxial layer on the N-type layer; implanting N-type dopants in areas of the P-type epitaxial layer to neutralize in ... | 09/05/2006 |
| 7091118 | Replacement metal gate transistor with metal-rich silicon layer and method for making the same A semiconductor device with a replacement metal gate and the process for making the same removes a dummy gate from a semiconductor device. Within the recess left by the dummy gate is a silicon layer on a gate dielectric layer. A replacement metal is deposited on the... | 08/15/2006 |
| 7037764 | Method of forming a contact in a pixel cell A method of implanting, for example, a phosphorous plug over a charge collection region and a method of forming a contact over the phosphorous plug implant and charge collection region. The method allows implantation of phosphorous or other materials without contami... | 05/02/2006 |
| 7029956 | Memory system capable of operating at high temperatures and method for fabricating the same A memory system having a plurality of T-RAM cells arranged in an array is presented where each T-RAM cell has dual vertical devices and is fabricated over a SiC substrate. Each T-RAM cell has a vertical thyristor and a vertical transfer gate. The top surface of each... | 04/18/2006 |
| 6969902 | Integrated circuit having antenna proximity lines coupled to the semiconductor substrate contacts An embodiment of the invention is an integrated circuit 2 having antenna proximity lines 3 coupled to the semiconductor substrate 5. Another embodiment of the invention is a method of manufacturing an integrated circuit 2 having antenna p... | 11/29/2005 |
| 6926840 | Flexible frame for mounting a deposition mask A method of mounting a deposition mask onto a flexible frame for use in vacuum deposition of material through a pealable deposition mask in forming an OLED, including the steps of providing a plate with the pealable deposition mask formed thereon; providing the flex... | 08/09/2005 |
| 6927108 | Solution-processed thin film transistor formation method An exemplary solution-processed thin film transistor formation method of the invention forms conductive solution-processed thin film material contacts, semiconductor solution-processed thin film material active regions, and dielectric solution-processed thin film ma... | 08/09/2005 |
