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| Number | Title | Issue Date |
| 5227340 | Process for fabricating semiconductor devices using a solid reactant source A solid source chemical vapor deposition apparatus and a CVD method for fabricating semiconductor devices are disclosed. In accordance with the process for fabricating semiconductor devices, a CVD reactor chamber having a solid reactant source apparatus c... | 07/13/1993 |
| 5223443 | Method for determining wafer cleanliness An embodiment of the present invention is a method for determining the cleanliness of a semiconductor wafer initially deposited with polysilicon, patterned with photoresist, processed, and then having the resist removed under standard conditions. The meth... | 06/29/1993 |
| 5185273 | Method for measuring ions implanted into a semiconductor substrate A method is provided for correlating ion implantation from a silicon wafer (13) to a gallium arsenide wafer. A first dose of a predetermined amount of silicon ions is implanted into a silicon wafer (13). The first dose of the implanted silicon ions in the... | 02/09/1993 |
| 5156982 | Pattern shift measuring method A method capable of measuring pattern shift of a semiconductor wafer in a short period of time with utmost ease and in an inexpensive manner is disclosed, wherein a main scale pattern and a vernier scale pattern are formed in parallel spaced confrontation... | 10/20/1992 |
| 5052821 | Measuring instrument for determining the temperature of semiconductor bodies and method for the manufacture of the measuring instrument The measuring instrument for determining the temperature in the interior of a semiconductor member (1) contains a thermoelement (5) integrated in the semiconductor member. In the manufacture of this measuring instrument, the thermoelement (5) is introduce... | 10/01/1991 |
| 5036015 | Method of endpoint detection during chemical/mechanical planarization of semiconductor wafers A method and apparatus for detecting a planar endpoint on a semiconductor wafer during chemical/mechanical planarization of the wafer. The planar endpoint is detected by sensing a change in friction between the wafer and a polishing surface. This change o... | 07/30/1991 |
| 5017514 | Method of manufacturing a semiconductor device using a main vernier pattern formed at a right angle to a subsidiary vernier pattern A semiconductor device has a device section and a peripheral section outside the device section. A main vernier pattern is formed in the peripheral section for inspecting finely an alignment state in a first direction, and a subsidiary vernier pattern is ... | 05/21/1991 |
| 5013676 | Structure of MIS-type field effect transistor and process of fabrication thereof For precise determination of a channel length of a MIS-type field effect transistor, two vertical cavities are formed spaced apart from each other by a land portion, two vertical portions of which provide source and drain regions formed by an ion implanta... | 05/07/1991 |
| 5010029 | Method of detecting the width of spacers and lightly doped drain regions A process for fabricating field effect transistors with lightly doped drain (LDD) regions having a selected width includes a method of optically detecting the width of spacers used to mask the LDD regions during the source and drain implant and a method o... | 04/23/1991 |
| 4983540 | Method of manufacturing devices having superlattice structures An ion beam (113) focused into a diameter of at most 0.1 μm bombards substantially perpendicularly to the superlattice layers of a one-dimensional superlattice structure and is scanned rectilinearly in a direction of the superlattice layers so as to form... | 01/08/1991 |
| 4981815 | Method for rapidly thermally processing a semiconductor wafer by irradiation using semicircular or parabolic reflectors A method for rapidly thermal processing a semiconductor wafer (1) by irradiation with electromagnetic radiation which provides that the majority portion of the energy required for heating the semiconductor wafer (1) is transmitted with at least single-sid... | 01/01/1991 |
| 4978923 | Electrical measurements of the profile of semiconductor devices during their manufacturing process A method for measuring the width and profile of structures in a semiconductor wafer comprises the step of constructing test structures on the wafer shaped to function as moats for confining electrically conductive liquid. The moats have an elongated shape... | 12/18/1990 |
| 4978627 | Method of detecting the width of lightly doped drain regions A process for fabricating field effect transistors with lightly doped drain (LDD) regions having a selected width includes a method of optically detecting the width of spacers used to mask the LDD regions during the source and drain implant and a method o... | 12/18/1990 |
| 4938847 | Method of manufacturing semiconductor devices, involving the detection of water Disclosed is a method of semiconductor device fabrication involving the detection of water in a dielectric layer that is part of the body of such device. At relatively high values of a voltage applied across the dielectric layer, water that is present in ... | 07/03/1990 |
| 4872944 | Process for the control in real time of the selectivity of the etching by analysis of the plasma gases in a process of reactive ionic etching and a reactor therefore The present invention concerns a process for the control in real time of the etching in a process for manufacturing electronic components of the type obtained by reacting ionic etching of wafers of silicon utilizing a plasma produced between two electrode... | 10/10/1989 |
| 4861419 | Apparatus and method for production process diagnosis using dynamic time warping Operations of a plasma etch reactor (10) are monitored to detect aberrations in etching operations. A reference end point trace is defined (62) for the etch process. Regions are defined in the reference end point trace (70) with aid of a dynamic time warp... | 08/29/1989 |
| 4857430 | Process and system for determining photoresist development endpoint by effluent analysis A system and method for determining the pattern development endpoint of a photoresist polymer during spin/spray processing of a semiconductor wafer utilizes the optical transmission of the waster developer liquid during the pattern develop process to dete... | 08/15/1989 |
| 4839311 | Etch back detection An improved method for the etch-back planarization of interlevel dielectric layers provides for cessation of the etch-back upon exposure of an indicator layer. the indicator layer, usually a metal, metal nitride, or silicon nitride is formed either within... | 06/13/1989 |
| 4829024 | Method of forming layered polysilicon filled contact by doping sensitive endpoint etching A semiconductor process is provided for the formation of a very low resistance contact. After a straight wall contact is formed conventionally above a silicon substrate, a blanket metal barrier layer is deposited. A plurality of planar polysilicon layers ... | 05/09/1989 |
| 4812416 | Method for executing a reproducible glow discharge In order to be able to check whether or not a glow procedure is executed properly, i.e. reproducibly, the temporal course of the formation of characteristic stable reaction products is traced mass spectrometrically.... | 03/14/1989 |
| 4794217 | Induction system for rapid heat treatment of semiconductor wafers A semiconductor wafer is transported by a mechanical system into or out of a quartz housing filled with a protection gas. The wafer is placed between and spaced apart from two graphite plates. A RF induction coil surrounding the quartz housing is used to ... | 12/27/1988 |
| 4717446 | Method of detecting the endpoint of the etch of epitaxially grown silicon A method of detecting the endpoint of expitaxially grown silicon using a monitor wafer is described. A monitor wafer having a substrate, an oxide layer, and a polysilicon layer is process in an epi chamber along with working wafers. The monitor wafer is u... | 01/05/1988 |
| 4692204 | Method of planarizing the surface of a semiconductor device, in which silicon nitride is used as isolating material A method of planarizing the surface of a semiconductor device comprising a substrate carrying on its surface a contact configuration, which method essentially consists in that the following steps are successively carried out: (a) depositing a silicon nitr... | 09/08/1987 |
| 4668330 | Furnace contamination The invention described herein describes certain test wafers to be used in diagnosing heavy metal contamination in furnaces used in the manufacture of electronic devices and the method of referencing such wafers to a common wafer source for establishing a... | 05/26/1987 |
| 4637123 | Method of standardizing and stabilizing semiconductor wafers Disclosed is a method of stabilizing and standardizing semiconductor wafers obtained from a plurality of vendor sources for use in both unipolar and bipolar device manufacturing lines. Based on measured initial oxygen concentration, the as-received wafers... | 01/20/1987 |
| 4609447 | Method of detecting alkali metal ions A method of determining the presence of alkali metal ions in a substrate comprising silicon or silicon doped with a p-type conductivity modifier is provided. The substrate to be tested is etched in a tetrafluoromethane/oxygen plasma and the etch rate is c... | 09/02/1986 |
| 4600597 | Method and device for determining the contour of spin-coated thin films of material on substrate topography A method for determining the contour of a spin-coated thin film of material, such as a photoresist solution, on an uneven topography, such as a patterned semiconductor wafer, utilizes a pattern of features as isolated, raised lines of different widths. Th... | 07/15/1986 |
| 4579812 | Process for forming slots of different types in self-aligned relationship using a latent image mask Slots of different types are fabricated using a single latent image mask. The slots of different types are thus located with respect to each other in a self-aligned relationship. In one embodiment an oxide of the semiconductor material, e.g., silicon diox... | 04/01/1986 |
| 4575462 | Method of growing an alloy film by a layer-by-layer process on a substrate, and a method of making a semiconductor device A method of growing an alloy film by a layer-by-layer process on a substrate is described, together with a method of making an semiconductor device in which an alloy film is grown on a substrate by a layer-by-layer process. The atomic ratio of constituent... | 03/11/1986 |
| 4571685 | Production system for manufacturing semiconductor devices A production system for manufacturing semiconductor devices comprises apparatus for making a semiconductor wafer during a first process step. A plurality of semiconductor devices, or semiconductor chips are arranged and incorporated in the wafer. A second... | 02/18/1986 |
| 4503087 | Process for high temperature drive-in diffusion of dopants into semiconductor wafers A process for high temperature, rapid drive-in diffusion employs a planar blackbody source placed in parallel alignment with a semiconductor wafer in a vacuum processing chamber. The wafer is rapidly heated, preferably to a temperature in the range of 110... | 03/05/1985 |
| 4487787 | Method of growing silicate glass layers employing chemical vapor deposition process Impurity concentration doped in PSG deposited on semiconductor substrates employing chemical vapor deposition process depends on the flow rate of reactive gases in the neighborhood of the first one of the plural semiconductor substrates processed with the... | 12/11/1984 |
| 4356055 | Process and device for monitoring the plasma etching of thin layer utilizing pressure changes in the plasma A process and device for plasma etching a thin layer. The process includes the steps of identifying a plateau in gas pressure that occurs slightly before the end of etching and then detecting a pressure variation (increase or decrease) from the plateau pr... | 10/26/1982 |
| 4109029 | High resolution electron beam microfabrication process for fabricating small geometry semiconductor devices The specification describes a process for fabricating semiconductor devices and circuits in which lateral geometry dimensions determining the performance level of the device or circuit are extremely small. In this process electron beam microfabrication te... | 08/22/1978 |
| 4073990 | Apparatus for adjusting a semiconductor wafer by electron beam illumination An apparatus and process is disclosed for the adjustment of a semiconductor wafer by electron beam illumination. An adjustment mark is provided in a semiconductor wafer having a first layer thereon. The mark is formed as a recess which extends through an ... | 02/14/1978 |
| 3993509 | Semiconductor device manufacture A semiconductor wafer is electrostatically clamped against a support by positioning an intermediate solid dielectric layer therebetween and applying a potential difference, thereby firmly and evenly clamping the wafer for photoresist or ion beam implantat... | 11/23/1976 |
| 3988564 | Ion beam micromachining method Millimeter-wave electronic devices are produced first by micromachining an epitaxial layer on a substrate wafer to a precise thickness by directing an ion beam over the epitaxial layer. Any bombardment damage is removed by a light chemical etch. Thereafte... | 10/26/1976 |
