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| Number | Title | Issue Date |
| 8093107 | Thyristor semiconductor memory and method of manufacture A thyristor based semiconductor device includes a thyristor having cathode, P-base, N-base and anode regions disposed in electrical series relationship. The N-base region for the thyristor has a cross-section that defines an inverted âTâ shape, wherein a buried ... | 01/10/2012 |
| 8039322 | Semiconductor device and manufacturing method thereof A manufacturing method of a semiconductor device 10 includes forming a plurality of second conductive second semiconductor regions at specific intervals on one main surface of a first conductive first semiconductor region, the plurality of second conductive s... | 10/18/2011 |
| 7972908 | Method of switching off a monolithically integrated optically controlled thyristor A method of switching-off a monolithically integrated light-activated thyristor structure in an n-p-n-p-n-p sequence is herein presented. In the method a monolithically integrated semiconductor thyristor structure is illuminated through an optical aperture to convey... | 07/05/2011 |
| 7968381 | Fin thyristor-based semiconductor device A semiconductor device having a thyristor-based device and a pass device exhibits characteristics that may include, for example, resistance to short channel effects that occur when conventional MOSFET devices are scaled smaller in connection with advancing technolog... | 06/28/2011 |
| 7960216 | Confinement techniques for non-volatile resistive-switching memories Confinement techniques for non-volatile resistive-switching memories are described, including a memory element having a first electrode, a second electrode, a metal oxide between the first electrode and the second electrode. A resistive switching memory element desc... | 06/14/2011 |
| 7943439 | Method for manufacturing semiconductor apparatus A manufacturing method is provided for manufacturing a semiconductor apparatus including a main semiconductor device and a subsidiary semiconductor device, which facilitates preventing characteristics variations from causing and reducing the manufacturing costs. The... | 05/17/2011 |
| 7943438 | Structure and method for a silicon controlled rectifier (SCR) structure for SOI technology A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a P+-N body diode and an N+-P body diode. The P+-N body diode and the N+-P body diode are laterally integrated. ... | 05/17/2011 |
| 7858449 | Thyristor device with carbon lifetime adjustment implant and its method of fabrication In a method of fabricating a semiconductor memory device, a thyristor may be formed in a layer of semiconductor material. Carbon may be implanted and annealed in a base-emitter junction region for the thyristor to affect leakage characteristics. The density of the c... | 12/28/2010 |
| 7855104 | Structure and method for latchup suppression A method and structure for an integrated circuit comprising a substrate of a first polarity, a merged triple well region of a second polarity and a doped region of the second polarity abutting the well region. The doped region is adapted to suppress latch-up in the ... | 12/21/2010 |
| 7824967 | Monolithically integrated light-activated thyristor and method A monolithically integrated light-activated thyristor in an n-p-n-p-n-p sequence consists of a four-layered thyristor structure and an embedded back-biased PN junction structure as a turn-off switching diode. The turn-off switching diode is formed through structured... | 11/02/2010 |
| 7790519 | Semiconductor device and manufacturing method thereof A semiconductor device has a MOS gate side surface structure, including a gate electrode filling a trench formed in a semiconductor substrate with an insulator film between the trench and the gate electrode, a gate insulator film covering the surface of the gate ele... | 09/07/2010 |
| 7718473 | HF control bidirectional switch An HF control bi-directional switch component of the type having its gate referenced to the rear surface formed in the front surface of a peripheral well of the component, including two independent gate regions intended to be respectively connected to terminals of a... | 05/18/2010 |
| 7615417 | Triggered silicon controlled rectifier for RF ESD protection An ESD protection circuit is formed at the input/output interface contact of an integrated circuit to protect the integrated circuit from damage caused by an ESD event. The ESD protection circuit has a polysilicon bounded SCR connected between a signal input/output ... | 11/10/2009 |
| 7566595 | Method of making and using guardringed SCR ESD protection cell Methods and circuits are disclosed for protecting an electronic circuit from ESD damage using an SCR ESD cell. An SCR circuit is coupled to a terminal of an associated microelectronic circuit for which ESD protection is desired. The SCR used in the ESD cell of the i... | 07/28/2009 |
| 7563653 | ESD protection for high voltage applications An electrostatic discharge (ESD) protection device includes a diode located in a substrate and an N-type metal oxide semiconductor (NMOS) device located in the substrate adjacent the diode, wherein both the diode and the NMOS are coupled to an input device, and at l... | 07/21/2009 |
| 7544544 | Low capacitance two-terminal barrier controlled TVS diodes A two-terminal barrier controlled TVS diode has a depletion region barrier blocking majority carrier flow through the channel region at the vicinity of the cathode region at bias levels below the predetermined clamping voltage applied between the anode electrode and... | 06/09/2009 |
| 7531389 | Method of manufacturing semiconductor device Disclosed herein is a method of manufacturing a semiconductor device having a thyristor formed by joining a first p-type semiconductor layer, a first n-type semiconductor layer, a second p-type semiconductor layer, and a second n-type semiconductor layer in order, t... | 05/12/2009 |
| 7528016 | Semiconductor device and manufacturing method thereof In a method of manufacturing a semiconductor device, a recess is formed in a semiconductor substrate. A gate insulating film is formed on a surface of the semiconductor substrate and a surface of the recess; and a gate electrode film is deposited on the gate insulat... | 05/05/2009 |
| 7491586 | Semiconductor device with leakage implant and method of fabrication A method of fabricating a thyristor-based memory may include forming different opposite conductivity-type regions in silicon for defining a thyristor and an access device in series relationship. An activation anneal may activate dopants previously implanted for the ... | 02/17/2009 |
| 7488626 | Thyristor device with carbon lifetime adjustment implant and its method of fabrication In a method of fabricating a semiconductor memory device, a thyristor may be formed in a layer of semiconductor material. Carbon may be implanted and annealed in a base-emitter junction region for the thyristor to affect leakage characteristics. The density of the c... | 02/10/2009 |
| 7479414 | Electrostatic discharge protection device for digital circuits and for applications with input/output bipolar voltage much higher than the core circuit power supply An electrostatic discharge (ESD) device and method is provided. The ESD device can comprise a substrate doped to a first conductivity type, an epitaxial region doped to the second conductivity type, and a first well doped to the first conductivity type disposed in t... | 01/20/2009 |
| 7442584 | Isolated vertical power device structure with both N-doped and P-doped trenches A method for manufacturing an isolated vertical power device includes forming, in a back surface of a first conductivity type substrate, back isolation wall trenches that surround a conduction region of the device. In a front surface of the substrate, front isolatio... | 10/28/2008 |
| 7439117 | Method for designing a micro electromechanical device with reduced self-actuation A method is described for designing a micro electromechanical device in which the risk of self-actuation of the device in use is reduced. The method includes locating a first conductor in a plane and locating a second conductor with its collapsible portion at a pred... | 10/21/2008 |
| 7436003 | Vertical thyristor for ESD protection and a method of fabricating a vertical thyristor for ESD protection A vertical thyristor for ESD protection comprises an anode (10), a cathode (16), a first gate electrode (12) and a second gate electrode (14). The first (12) and second (14) gate electrodes are arranged between the anode ( | 10/14/2008 |
| 7423299 | Semiconductor devices with a field shaping region A semiconductor device, for example a diode (200), having a pn junction (101) has an insulating material field shaping region (201) adjacent, and possibly bridging, the pn junction. The field shaping region (201) preferably has a high die... | 09/09/2008 |
| 7402494 | Method for fabricating high voltage semiconductor device A method for fabricating a high voltage semiconductor device, which comprises a semiconductor substrate; a gate insulation layer formed on the semiconductor substrate; and a gate electrode formed on the gate insulation layer, comprising: forming a mask pattern on th... | 07/22/2008 |
| 7387918 | Method of forming a silicon controlled rectifier structure with improved punch through resistance When a high-voltage, such as from an ESD pulse, is placed across a silicon controlled rectifier, which includes an NPN transistor and a PNP transistor that is connected to the NPN transistor, the likelihood of punch through occurring between two regions of the recti... | 06/17/2008 |
| 7385250 | Semiconductor device A semiconductor device comprises a semiconductor portion including first semiconductor layers of a first conduction type and second semiconductor layers of a second conduction type alternately arranged on the surface of a semiconductor substrate to form a striped sh... | 06/10/2008 |
| 7384825 | Methods of fabricating phase change memory elements having a confined portion of phase change material on a recessed contact Methods of fabricating phase change memory elements include forming an insulating layer on a semiconductor substrate, forming a through hole penetrating the insulating layer, forming a lower electrode in the through hole and forming a recess having a sidewall compri... | 06/10/2008 |
| 7374974 | Thyristor-based device with trench dielectric material A thyristor-based semiconductor device includes a thyristor body that has at least one region in the substrate and a thyristor control port in a trenched region of the device substrate. According to an example embodiment of the present invention, the trench is at le... | 05/20/2008 |
| 7364971 | Method for manufacturing semiconductor device having super junction construction A semiconductor device includes a body region, a drift region having a first part and a second part, and a trench gate electrode. The body region is disposed on the drift region. The first and second parts extend in an extending direction so that the second part is ... | 04/29/2008 |
| 7351614 | Deep trench isolation for thyristor-based semiconductor device A thyristor-based semiconductor device includes a filled trench separating and electrically insulating adjacent thyristor control ports. According to an example embodiment of the present invention, the filled trench is formed in a substrate adjacent to at least one ... | 04/01/2008 |
| 7342282 | Compact SCR device and method for integrated circuits A semiconductor device and method for electrostatic discharge protection. The semiconductor device includes a first semiconductor controlled rectifier and a second semiconductor controlled rectifier. The first semiconductor controlled rectifier includes a first semi... | 03/11/2008 |
| 7342301 | Connection device with actuating element for changing a conductive state of a via A connection device includes a plurality of re-configurable vias that connect a first metal layer to a second metal layer. An actuating element is disposed between the first metal layer and the second metal layer. The actuating element changes the configuration of t... | 03/11/2008 |
| 7339203 | Thyristor and method of manufacture A thyristor and a method for manufacturing the thyristor that includes a gate region extending from the first major surface into a semiconductor substrate and an anode region extending from the second major surface into the semiconductor substrate. A cathode region ... | 03/04/2008 |
| 7332749 | Junction-gate type static induction thyristor and high-voltage pulse generator using such junction-gate type static induction thyristor A compact, inexpensive static induction thyristor (SIThy) which is less likely to be broken down at a high voltage rise-up rate during operation and which is used in a high-voltage pulse generator capable of generating a high-voltage short pulse is provided. Thickne... | 02/19/2008 |
| 7329579 | Phase changeable memory cells and methods of fabricating the same A phase changeable memory cell is disclosed. According to embodiments of the invention, a phase changeable memory cell is formed that has a reduced contact area with one of the electrodes, compared to previously known phase changeable memory cells. This contact area... | 02/12/2008 |
| 7329566 | Semiconductor device and method of manufacture A semiconductor component and method of manufacture, including an insulated gate bipolar transistor (IGBT) (100, 200) that includes a semiconductor substrate (110) having a first conductivity type and buried semiconductor region (115) having a s... | 02/12/2008 |
| 7326596 | High voltage power device with low diffusion pipe resistance A method for forming a high voltage semiconductor power device comprises providing a first dopant source of first conductivity on an upper surface of a substrate of second conductivity. A second dopant source of first conductivity is provided on a lower surface of t... | 02/05/2008 |
| 7327541 | Operation of dual-directional electrostatic discharge protection device A two-terminal ESD protection structure formed by an arrangement of five adjacent semiconductor regions (112, 114, 116, 118, and 120) of alternating conductivity type provides protection against both positive and negative ESD voltages. The middle semic... | 02/05/2008 |
