Bizarre Patents
Dining Table Having Integral Dishwasher
A space-saving dishwasher, which may be installed within a counter top or table, having a dish-carrying rack that is vertically shiftable through the open top of the dishwasher for facilitating loading and unloading of the dishes.
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| Number | Title | Issue Date |
| 8183086 | Diamond GaN devices and associated methods Semiconductor devices and methods of making thereof are provided. In one aspect, for example, a method for making a semiconductor device can include polishing a working surface of a diamond layer to a substantially flat surface, depositing a buffer layer on the work... | 05/22/2012 |
| 8178389 | Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1017 atoms/cm3 and the maximum concentration is 50 times or less than that of a minimum conce... | 05/15/2012 |
| 8158455 | Boron-doped diamond semiconductor First and second synthetic diamond regions are doped with boron. The second synthetic diamond region is doped with boron to a greater degree than the first synthetic diamond region, and in physical contact with the first synthetic diamond region. In a further exampl... | 04/17/2012 |
| 8143094 | Silicon carbide semiconductor device and manufacturing method thereof A manufacturing method of a silicon carbide semiconductor device in which an electric field applied to a gate oxide film can be relaxed and thereby reliability can be ensured, and by the method manufacturing costs can be reduced. Well regions, channel regions, and g... | 03/27/2012 |
| 8039301 | Gate after diamond transistor A gate after diamond transistor and method of making comprising the steps of depositing a first dielectric layer on a semiconductor substrate, depositing a diamond particle nucleation layer on the first dielectric layer, growing a diamond thin film layer on the firs... | 10/18/2011 |
| 7993966 | Method for manufacturing silicon carbide semiconductor device having high channel mobility A silicon carbide semiconductor device having a MOS structure includes: a substrate; a channel area in the substrate; a first impurity area; a second impurity area; a gate insulating film on the channel area; and a gate on the gate insulating film. The channel area ... | 08/09/2011 |
| 7989261 | Fabricating a gallium nitride device with a diamond layer In one aspect, a method includes fabricating a device. The device includes a gallium nitride (GaN) layer, a diamond layer disposed on the GaN layer and a gate structure disposed in contact with the GaN layer and the diamond layer. In another aspect, a device ... | 08/02/2011 |
| 7989260 | Method of selectively forming atomically flat plane on diamond surface, diamond substrate produced by the method, and semiconductor device using the same The present invention provides a method of selectively forming a flat plane on an atomic level on a diamond (001), (110) or (111) surface. A method of selectively forming a flat plane on a diamond surface comprising growing diamond on a stepped diamond surfac... | 08/02/2011 |
| 7981721 | Diamond transistor and method of manufacture thereof A method of manufacturing a transistor, typically a MESFET, includes providing a substrate including single crystal diamond material having a growth surface on which further layers of diamond material can be deposited. The substrate is preferably formed by a CVD pro... | 07/19/2011 |
| 7977154 | Self-aligned methods based on low-temperature selective epitaxial growth for fabricating silicon carbide devices Self-aligned fabrication of silicon carbide semiconductor devices is a desirable technique enabling reduction in the number of photolithographic steps, simplified alignment of different device regions, and reduced spacing between the device regions. This invention p... | 07/12/2011 |
| 7951642 | Diamond-like carbon electronic devices and methods of manufacture Materials, devices, and methods for enhancing performance of electronic devices such as solar cells, fuels cells, LEDs, thermoelectric conversion devices, and other electronic devices are disclosed and described. A diamond-like carbon electronic device can include a... | 05/31/2011 |
| 7939367 | Method for growing an adherent diamond layer atop an interlayer bonded to a compound semiconductor substrate The invention is a method for growing a critical adherent diamond layer on a substrate by Chemical Vapor Deposition (CVD) and the article produced by the method. The substrate can be a compound semiconductor coated with an adhesion layer. The adhesion layer is prefe... | 05/10/2011 |
| 7927915 | Low resistivity silicon carbide An opaque, low resistivity silicon carbide and a method of making the opaque, low resistivity silicon carbide. The opaque, low resistivity silicon carbide is doped with a sufficient amount of nitrogen to provide the desired properties of the silicon carbide. The opa... | 04/19/2011 |
| 7892881 | Fabricating a device with a diamond layer In one aspect, a method includes forming a silicon dioxide layer on a surface of a diamond layer disposed on a gallium nitride (GaN)-type layer. The method also includes etching the silicon dioxide layer to form a pattern. The method further includes etching portion... | 02/22/2011 |
| 7888171 | Fabricating a gallium nitride layer with diamond layers In one aspect, a method includes fabricating a gallium nitride (GaN) layer with a first diamond layer having a first thermal conductivity and a second diamond layer having a second thermal conductivity greater than the first thermal conductivity. The fabricating inc... | 02/15/2011 |
| 7846766 | Diamond film formation method and film formation jig thereof A diamond film formation method includes forming, in a composite of a metal material and a semiconductor material, diamond nuclei on a surface of the metal material at a temperature below 650° C. in a first mixed gas containing at least carbon and hydrogen, and gro... | 12/07/2010 |
| 7846767 | Semiconductor-on-diamond devices and associated methods Semiconductor-on-diamond (SOD) substrates and methods for making such substrates are provided. In one aspect, a method of making an SOD device is provided that includes etching depressions into an etch surface of a semiconductor substrate to a uniform depth, deposit... | 12/07/2010 |
| 7829377 | Diamond medical devices Masked and controlled ion implants, coupled with annealing or etching are used in CVD formed single crystal diamond to create structures for both optical applications, nanoelectromechanical device formation, and medical device formation. Ion implantation is employed... | 11/09/2010 |
| 7799599 | Single crystal silicon carbide layers on diamond and associated methods Semiconductor-on-diamond devices and methods for making such devices are provided. In one aspect, for example, a method for making a semiconductor-on-diamond substrate is provided, including depositing a conformal amorphous diamond layer on a single crystal Si base ... | 09/21/2010 |
| 7799600 | Doped diamond LED devices and associated methods LED devices and methods for making such devices are provided. One such method may include forming epitaxially a substantially single crystal SiC layer on a substantially single crystal Si wafer, forming epitaxially a substantially single crystal diamond layer on the... | 09/21/2010 |
| 7795070 | Semiconductor device including an amorphous nitrided silicon adhesion layer and method of manufacture therefor Provided is a method for manufacturing a semiconductor device. The method for manufacturing the semiconductor device, without limitation, includes forming a first semiconductor layer over a substrate, and forming a second semiconductor layer over the first semicondu... | 09/14/2010 |
| 7781256 | Semiconductor-on-diamond devices and associated methods Semiconductor devices and methods for making such devices are provided. One such method may include forming an epitaxial layer of single crystal SiC on a single crystal Si growth substrate, forming an epitaxial diamond layer on the layer of SiC, forming a Si layer o... | 08/24/2010 |
| 7781257 | Electrical switching device and method of embedding catalytic material in a diamond substrate An electrical switching device (30) is disclosed. The device comprises a diamond substrate (24), a cathode (34) in contact with the substrate and having electrically conductive emitters (32) extending into the substrate, and an upper elec... | 08/24/2010 |
| 7727798 | Method for production of diamond-like carbon film having semiconducting property Method for production of diamond-like carbon film having semiconducting properties comprises preparing a boron-doped diamond-like carbon (B-DLC) thin film on a silicon substrate through a radio frequency magnetron sputtering process, wherein a composite target mater... | 06/01/2010 |
| 7723155 | Method for the treatment of a surface of a metal-carbide substrate for use in semiconductor manufacturing processes as well as such a metal-carbide substrate The invention relates to a method for the treatment of a surface of a silicon carbide (SiC) substrate, said substrate being used in semiconductor manufacturing processes. The invention also relates to a SiC substrate for use in semiconductor manufacturing processes ... | 05/25/2010 |
| 7718469 | Alternative methods for fabrication of substrates and heterostructures made of silicon compounds and alloys The present invention relates to alternative methods for the production of crystalline silicon compounds and/or alloys such as silicon carbide layers and substrates. ... | 05/18/2010 |
| 7629199 | Method for fabricating semiconductor package with build-up layers formed on chip A semiconductor package with build-up layers formed on a chip and a fabrication method of the semiconductor package are provided. A chip with a plurality of conductive bumps formed on bond pads thereof is received within a cavity of a carrier, and a dielectric layer... | 12/08/2009 |
| 7588961 | Semiconductor device and manufacturing method thereof In general, this disclosure describes a semiconductor device that exhibits an increased resistance and reduced leakage current in a reverse-biased state, and a method for manufacturing such a semiconductor device. For example, in one embodiment, the increased resist... | 09/15/2009 |
| 7556982 | Method to grow pure nanocrystalline diamond films at low temperatures and high deposition rates A method of depositing nanocrystalline diamond film on a substrate at a rate of not less than about 0.2 microns/hour at a substrate temperature less than about 500° C. The method includes seeding the substrate surface with nanocrystalline diamond powder to an areal... | 07/07/2009 |
| 7553693 | Method for making a field effect transistor with diamond-like carbon channel and resulting transistor The field effect transistor comprises a source and a drain connected by a channel controlled by a gate electrode separated from the channel by a gate insulator. The channel is formed by a diamond-like carbon layer. The method for making the transistor successively c... | 06/30/2009 |
| 7553694 | Methods of forming a high conductivity diamond film and structures formed thereby A method of forming a high thermal conductivity diamond film and its associated structures comprising selectively nucleating a region of a substrate, and forming a diamond film on the substrate such that the diamond film has large grains, which are at least about 20... | 06/30/2009 |
| 7498191 | Semiconductor-on-diamond devices and associated methods Semiconductor-on-diamond (SOD) substrates and methods for making such substrates are provided. In one aspect, a method of making an SOD substrate may include depositing a base layer onto a lattice-orienting silicon (Si) substrate such that the base layer lattice is ... | 03/03/2009 |
| 7470563 | Microelectronic device packages and methods for controlling the disposition of non-conductive materials in such packages A microelectronic package and method for forming such a package. In one embodiment, the package can include a microelectronic substrate having first connection sites, and a support member having second connection sites and third connection sites, with the third conn... | 12/30/2008 |
| 7449361 | Semiconductor substrate with islands of diamond and resulting devices Disclosed is a method of forming a substrate having islands of diamond (or other material, such as diamond-like carbon), as well as integrated circuit devices formed from such a substrate. A diamond island can form part of the thermal solution for an integrated circ... | 11/11/2008 |
| 7442575 | Method of manufacturing semiconductor nanowires A method is shown for manufacturing silicon semiconductor nanowires on graphite cloth conducting substrates. The nanowires are grown on the substrate by first depositing a thin gold film on the graphite cloth using RF sputtering. The substrate structure is then expo... | 10/28/2008 |
| 7439081 | Method for making integrated circuit chip utilizing oriented carbon nanotube conductive layers A conductive layer in an integrated circuit is formed as a sandwich having multiple sublayers, including at least one sublayer of oriented carbon nanotubes. The conductive layer sandwich preferably contains two sublayers of carbon nanotubes, in which the carbon nano... | 10/21/2008 |
| 7417227 | Scanning interference electron microscope The conventional detection technique has the following problems in detecting interference fringes: (1) Setting and adjustment are complex and difficult to conduct; (2) A phase image and an amplitude image cannot be displayed simultaneously; and (3) Detection efficie... | 08/26/2008 |
| 7396410 | Featuring forming methods to reduce stacking fault nucleation sites Epitaxial silicon carbide layers are fabricated by forming features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The features include at least one sidewall that is orientated nonparallel (i.e., obliq... | 07/08/2008 |
| 7393717 | Diamond-based electrical resistor component The invention relates to an electrical component having a resistance area and contacts electrically connected to the resistance area, the resistance area including electrically conductive diamond. The resistance area can be configured as a resistance layer on top of... | 07/01/2008 |
| 7394103 | All diamond self-aligned thin film transistor A substantially all diamond transistor with an electrically insulating substrate, an electrically conductive diamond layer on the substrate, and a source and a drain contact on the electrically conductive diamond layer. An electrically insulating diamond layer is in... | 07/01/2008 |
