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A method of swing on a swing is disclosed, in which a user positioned on a standard swing suspended by two chains from a substantially horizontal tree branch induces side to side motion by pulling alternately on one chain and then the other.
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| Number | Title | Issue Date |
| 8187919 | Oxide thin film transistor and method of fabricating the same An oxide thin film transistor (TFT) and its fabrication method are disclosed. In a TFT of a bottom gate structure using amorphous zinc oxide (ZnO)-based semiconductor as an active layer, source and drain electrodes are formed, on which the active layer made of oxide... | 05/29/2012 |
| 8173487 | Semiconductor element, method for manufacturing same, and electronic device including same A thin-film transistor (1) of the present invention includes an insulating substrate (2), a gate electrode (3) which has a predetermined shape and is formed on the insulating substrate (2), a gate insulating film (4) formed on the ... | 05/08/2012 |
| 8143092 | Methods for forming resistive switching memory elements by heating deposited layers Resistive switching nonvolatile memory elements are provided. A metal-containing layer and an oxide layer for a memory element can be heated using rapid thermal annealing techniques. During heating, the oxide layer may decompose and react with the metal-containing l... | 03/27/2012 |
| 8143093 | Process to make metal oxide thin film transistor array with etch stopping layer The present invention generally relates to thin film transistors (TFTs) and methods of making TFTs. The active channel of the TFT may comprise one or more metals selected from the group consisting of zinc, gallium, tin, indium, and cadmium. The active channel may al... | 03/27/2012 |
| 8110436 | Method for manufacturing field-effect transistor A method for manufacturing a field-effect transistor is provided. The field-effect transistor includes on a substrate a source electrode, a drain electrode, an oxide semiconductor layer, an insulating layer and a gate electrode. The method includes, after forming th... | 02/07/2012 |
| 8110435 | Method and apparatus for manufacturing semiconductor device A method and apparatus for manufacturing a semiconductor device is disclosed, which is capable of realizing an extension of a cleaning cycle for a processing chamber, the method comprising preheating a substrate; placing the preheated substrate onto a substrate-supp... | 02/07/2012 |
| 8058097 | Methods of forming resistive memory devices Methods of forming a resistive memory device include forming an insulation layer on a semiconductor substrate including a conductive pattern, forming a contact hole in the insulation layer to expose the conductive pattern, forming a lower electrode in the contact ho... | 11/15/2011 |
| 8058096 | Microelectronic device A thin film transistor is manufactured by a process including forming an oxide semiconductor channel, patterning the oxide semiconductor channel with a photolithographic process, and exposing the patterned oxide semiconductor channel to an oxygen containing plasma. | 11/15/2011 |
| 8043889 | Patterned chemical bath deposition of a textured thin film from a printed seed layer A chemical bath deposition (CBD) process is provided for forming a textured zinc oxide film pattern from a zinc oxide printed seed layer. The process provides a substrate and prints a zinc oxide seed layer in a pattern overlying the substrate. Using a CBD process, a... | 10/25/2011 |
| 8034656 | Annealing method of zinc oxide thin film An annealing method of a zinc oxide thin film, comprises loading a substrate coated with a zinc oxide thin film into a chamber, allowing a hydrogen gas to be flowed into the chamber, fixing pressure in the chamber and annealing the zinc oxide thin film using the hyd... | 10/11/2011 |
| 8034655 | Non-volatile resistive oxide memory cells, non-volatile resistive oxide memory arrays, and methods of forming non-volatile resistive oxide memory cells and memory arrays A method of forming a non-volatile resistive oxide memory cell includes forming a first conductive electrode of the memory cell as part of a substrate. Insulative material is deposited over the first electrode. An opening is formed into the insulative material over ... | 10/11/2011 |
| 8021916 | Method for manufacturing semiconductor device To provide a method for manufacturing a thin film transistor in which contact resistance between an oxide semiconductor layer and source and drain electrode layers is small, the surfaces of the source and drain electrode layers are subjected to sputtering treatment ... | 09/20/2011 |
| 8021917 | Semiconductor device and method for manufacturing the semiconductor device An object is to suppress deterioration of element characteristics even when an oxide semiconductor is formed after a gate insulating layer, a source electrode layer, and a drain electrode layer are formed. A gate electrode layer is formed over a substrate. A gate in... | 09/20/2011 |
| 8012794 | Capping layers for metal oxynitride TFTS A capping layer may be deposited over the active channel of a thin film transistor (TFT) in order to protect the active channel from contamination. The capping layer may affect the performance of the TFT. If the capping layer contains too much hydrogen, nitrogen, or... | 09/06/2011 |
| 7998789 | Method and system for forming copper indium gallium sulfur selenide absorption layer and cadmium sulfide buffer layer under non-vacuum condition A method and a system for forming a copper indium gallium sulfur selenide (CIGSSe) absorption layer and a cadmium sulfide (CdS) buffer layer under non-vacuum condition is disclosed. A coating layer is formed on the back electrode layer on the substrate by mixing the... | 08/16/2011 |
| 7993965 | Process for producing semiconductive porcelain composition/electrode assembly A semiconductive porcelain composition/electrode assembly which is low in room temperature resistivity of 100 Ω·cm or less and is reduced in change with the passage of time due to energization with regard to the semiconductive porcelain composition in which a part... | 08/09/2011 |
| 7993964 | Manufacturing method of semiconductor device including active layer of zinc oxide with controlled crystal lattice spacing A manufacturing method of a semiconductor device includes forming an oxide semiconductor thin film layer of zinc oxide, wherein at least a portion of the oxide semiconductor thin film layer in an as-deposited state includes lattice planes having a preferred orientat... | 08/09/2011 |
| 7981720 | Method of making thin film transistor with zinc oxide based semiconductor layer and zinc oxide based insulation layer According to a method of fabricating an oxide thin-film transistor, when a thin-film transistor is fabricated by using an amorphous zinc oxide (ZnO)-based semiconductor as an active layer, it may be possible to reduce a tact time as well as attain an enhanced elemen... | 07/19/2011 |
| 7977152 | Non-volatile resistive-switching memories formed using anodization Non-volatile resistive-switching memories formed using anodization are described. A method for forming a resistive-switching memory element using anodization includes forming a metal containing layer, anodizing the metal containing layer at least partially to form a... | 07/12/2011 |
| 7977151 | Double self-aligned metal oxide TFT A method of fabricating metal oxide TFTs on transparent substrates includes the steps of positioning an opaque gate metal area on the front surface of the substrate, depositing transparent gate dielectric and transparent metal oxide semiconductor layers overlying th... | 07/12/2011 |
| 7977153 | Methods for forming resistive-switching metal oxides for nonvolatile memory elements Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed from resistive-switching metal oxide layers. Metal oxide layers may be formed using sputter deposition at relatively low sputtering pow... | 07/12/2011 |
| 7972899 | Method for fabricating copper-containing ternary and quaternary chalcogenide thin films An apparatus for depositing a solid film onto a substrate from a reagent solution includes reservoirs of reagent solutions maintained at a sufficiently low temperature to inhibit homogeneous reactions within the reagent solutions. The chilled solutions are dispensed... | 07/05/2011 |
| 7972898 | Process for making doped zinc oxide The present invention relates to a process of making a zinc-oxide-based thin film semiconductor, for use in a transistor, comprising thin film deposition onto a substrate comprising providing a plurality of gaseous materials comprising first, second, and third gaseo... | 07/05/2011 |
| 7972900 | Methods of fabricating nanostructured ZnO electrodes for efficient dye sensitized solar cells The present invention provides methods of forming metal oxide semiconductor nanostructures and, in particular, zinc oxide (ZnO) semiconductor nanostructures, possessing high surface area, plant-like morphologies on a variety of substrates. Optoelectronic devices, su... | 07/05/2011 |
| 7972897 | Methods for forming resistive switching memory elements Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrat... | 07/05/2011 |
| 7968368 | Method of manufacturing a field effect transistor having an oxide semiconductor A method of manufacturing a field effect transistor, which has high alignment accuracy between a gate electrode and source and drain electrodes and can provide a transparent device at a low cost. Since a patterned light blocking film is formed on the rear side of a ... | 06/28/2011 |
| 7927914 | Manufacturing method for semiconductor photoelectrochemical cell and semiconductor photoelectrochemical cell The invention provides a manufacturing method for a semiconductor photoelectrochemical cell, comprising the steps of burning a base made of titanium or a titanium alloy in an atmosphere of 700° C. to 1000° C. at a rate of temperature increase of no lower than 5° ... | 04/19/2011 |
| 7923288 | Zinc oxide thin film electroluminescent devices A thin film electro-luminescent device (TFEL) includes an active layer made of a direct bandgap semiconductor material, e.g. zinc oxide, doped with exciton binding centers, such as aluminum, in small amounts, e.g. 0.001 at % to 30.0 at %. The exciton binding centers... | 04/12/2011 |
| 7923287 | Thin film transistor substrate having transparent conductive metal and method of manufacturing the same A thin film transistor substrate and a method of manufacturing the same are disclosed. The method of manufacturing a thin film transistor substrate includes forming a first conductive pattern group including a gate line, a gate electrode, and a lower gate pad electr... | 04/12/2011 |
| 7915075 | Method for manufacturing semiconductor device An object is to establish a processing technique in manufacture of a semiconductor device in which an oxide semiconductor is used. A gate electrode is formed over a substrate, a gate insulating layer is formed over the gate electrode, an oxide semiconductor layer is... | 03/29/2011 |
| 7883935 | Method of manufacturing a semiconductor device Aimed at improving adhesiveness between upper and lower interconnects in semiconductor devices, a semiconductor device of the present invention includes a second dielectric multi-layered film formed on a substrate, and containing a lower interconnect; a first dielec... | 02/08/2011 |
| 7883934 | Method of fabricating oxide semiconductor device A method for fabricating a device using an oxide semiconductor, including a process of forming the oxide semiconductor on a substrate and a process of changing the conductivity of the oxide semiconductor by irradiating a predetermined region thereof with an energy r... | 02/08/2011 |
| 7863087 | Methods for forming resistive-switching metal oxides for nonvolatile memory elements Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed from resistive-switching metal oxide layers. Metal oxide layers may be formed using sputter deposition at relatively low sputtering pow... | 01/04/2011 |
| 7858436 | Semiconductor device, its manufacture method and template substrate The semiconductor device has: a ZnO-containing substrate containing Li; a zinc silicate layer formed above the ZnO-containing substrate; and a semiconductor layer epitaxially grown relative to the ZnO-containing substrate via the zinc silicate layer. ... | 12/28/2010 |
| 7855098 | Method of forming, modifying, or repairing a semiconductor device using field-controlled diffusion A technique for altering or repairing the operating state of a semiconductor device comprises field-controlled diffusion of mobile dopant atoms within the metal oxide crystal lattice. When heated (e.g., above 550 K) in the presence of an electric field (e.g., bias t... | 12/21/2010 |
| 7842539 | Zinc oxide semiconductor and method of manufacturing the same There are provided a method of manufacturing a zinc oxide semiconductor, and a zinc oxide semiconductor manufactured using the method. A metal catalyst layer is formed on a zinc oxide thin film that has an electrical characteristic of a n-type semiconductor, and a h... | 11/30/2010 |
| 7838330 | Method of field-controlled diffusion and devices formed thereby A technique for creating high quality Schottky barrier devices in doped (e.g., Li+) crystalline metal oxide (e.g., ZnO) comprises field-controlled diffusion of mobile dopant atoms within the metal oxide crystal lattice. When heated (e.g., above 550 K) in ... | 11/23/2010 |
| 7829376 | Methods of forming zinc oxide based II-VI compound semiconductor layers with shallow acceptor conductivities A p-type ZnO-based II-VI compound semiconductor layer has silver, potassium and/or gold dopants therein at a net p-type dopant concentration of greater than about 1×1017 cm−3. A method of forming the layer includes using an atomic layer depo... | 11/09/2010 |
| 7824956 | Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same In some aspects, a method of forming a memory cell is provided that includes (1) forming a first conductor above a substrate; (2) forming a reversible resistance-switching element above the first conductor using a selective growth process; (3) forming a diode above ... | 11/02/2010 |
| 7824957 | Method for producing semiconductor device During a process of forming an active layer of a semiconductor device using a ZnO film, the ZnO film is laser-annealed with an ultraviolet pulsed laser to reduce the resistance of the film, and then oxidation treatment is applied to increase the specific resistance ... | 11/02/2010 |
