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| Number | Title | Issue Date |
| 8187918 | Methods of forming multi-level cell of semiconductor memory Provided is a method of forming a semiconductor memory cell in which in order to store two bits or more data in a memory cell, three or more bottom electrode contacts (BECs) and phase-change materials (GST) have a parallel structure on a single contact plug (CP) and... | 05/29/2012 |
| 8178386 | Phase change memory cell array with self-converged bottom electrode and method for manufacturing An array of phase change memory cells is manufactured by forming a separation layer over an array of contacts, forming a patterning layer on the separation layer and forming an array of mask openings in the patterning layer using lithographic process. Etch masks are... | 05/15/2012 |
| 8178387 | Methods for reducing recrystallization time for a phase change material A method for reducing recrystallization time for a phase change material of a memory cell element in conjunction with the manufacture of a memory cell device can be carried out as follows. A phase change material, a buffer layer material and a cladding layer materia... | 05/15/2012 |
| 8178388 | Programmable resistive RAM and manufacturing method Integrated circuit nonvolatile memory uses programmable resistive elements. In some examples, conductive structures such as electrodes are prepared, and the programmable resistive elements are laid upon the prepared electrodes. This prevents contamination of the pro... | 05/15/2012 |
| 8173486 | Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same In some aspects, a method of forming a memory cell is provided that includes (1) forming a steering element above a substrate; and (2) selectively forming a reversible resistance-switching element coupled to the steering element by: (a) forming a material layer on t... | 05/08/2012 |
| 8168469 | Nonvolatile memory device made of resistance material and method of fabricating the same A nonvolatile memory device using a resistance material and a method of fabricating the same are provided. The nonvolatile memory device includes a switching element, and a data storage part electrically connected to the switching element. In the data storage part, ... | 05/01/2012 |
| 8153471 | Method for forming a reduced active area in a phase change memory structure A phase change memory structure and method for forming the same, the method including providing a substrate comprising a conductive area; forming a spacer having a partially exposed sidewall region at an upper portion of the spacer defining a phase change memory ele... | 04/10/2012 |
| 8148197 | Methods of forming germanium-antimony-tellurium materials and a method of forming a semiconductor device structure including the same A method of forming a material. The method comprises conducting an ALD layer cycle of a first metal, the ALD layer cycle comprising a reactive first metal precursor and a co-reactive first metal precursor. An ALD layer cycle of a second metal is conducted, the ALD l... | 04/03/2012 |
| 8133758 | Method of fabricating phase-change memory device having TiC layer Provided is a method of fabricating a phase-change memory device. The phase-change memory device includes a memory cell having a switching device and a phase change pattern. The method includes; forming a TiC layer on a contact electrically connecting the switching ... | 03/13/2012 |
| 8133756 | Chemical-mechanical polishing method for polishing phase-change material and method of fabricating phase-change memory device using the same A chemical-mechanical polishing (CMP) method of polishing a phase-change material and a method of fabricating a phase-change memory, the CMP method including forming the phase-change material on an activation surface of a semiconductor wafer, and performing a CMP pr... | 03/13/2012 |
| 8133757 | Method of manufacturing a phase changeable memory unit having an enhanced structure to reduce a reset current A phase changeable memory unit includes a lower electrode, an insulating interlayer structure having an opening, a phase changeable material layer and an upper electrode. The lower electrode is formed on a substrate. The insulating interlayer structure has an openin... | 03/13/2012 |
| 8129218 | Self-aligned, planar phase change memory elements and devices, systems employing the same and method of forming the same Phase change memory elements, devices and systems using the same and methods of forming the same are disclosed. A memory element includes first and second electrodes, and a phase change material layer between the first and second electrodes. The phase change materia... | 03/06/2012 |
| 8124445 | Confined resistance variable memory cell structures and methods Confined resistance variable memory cell structures and methods are described herein. One or more methods of forming a confined resistance variable memory cell structure includes forming a via in a memory cell structure and forming a resistance variable material in ... | 02/28/2012 |
| 8088644 | Bistable resistance value acquisition device, manufacturing method thereof, metal oxide thin film, and manufacturing method thereof A ferroelectric layer (104) is sandwiched between a lower electrode layer (103) and an upper electrode (105). When a predetermined voltage (DC or pulse) is applied between the lower electrode layer (103) and the upper electrode (105 | 01/03/2012 |
| 8088643 | Resistance variable memory device with nanoparticle electrode and method of fabrication A chalcogenide-based programmable conductor memory device and method of forming the device, wherein a nanoparticle is provided between an electrode and a chalcogenide glass region. The method of forming the nanoparticle utilizes a template over the electrode or rand... | 01/03/2012 |
| 8084295 | Thin film transistor having n-type and p-type CIS thin films and method of manufacturing the same Provided is a thin film transistor (TFT) which uses CIS (CuInSe2), including Se, which is a chalcogen-based material, and can provide a rectifying function, and electric and optical switching functions of a diode. The TFT according to the present inventio... | 12/27/2011 |
| 8071423 | Variable resistance memory devices and methods of forming variable resistance memory devices Provided are variable resistance memory devices and methods of forming the variable resistance memory devices. The methods can include forming an etch stop layer on an electrode, forming a molding layer on the etch stop layer, forming a recess region including a low... | 12/06/2011 |
| 8053274 | Self cleaning large scale method and furnace system for selenization of thin film photovoltaic materials According to an embodiment, the present invention provide a method for fabricating a copper indium diselenide semiconductor film using a self cleaning furnace. The method includes transferring a plurality of substrates into a furnace, the furnace comprising a proces... | 11/08/2011 |
| 8048713 | Process for manufacturing a CBRAM memory having enhanced reliability The invention relates to a process for manufacturing a plurality of CBRAM memories, each comprising a memory cell in a chalcogenide solid electrolyte, an anode, and a cathode, the process comprising implementing a sublayer of a high thermal conductivity material, hi... | 11/01/2011 |
| 8043888 | Phase change memory cell with heater and method therefor A method for forming a phase change memory cell (PCM) includes forming a heater for the phase change memory and forming a phase change structure electrically coupled to the heater. The forming a heater includes siliciding a material including silicon to form a silic... | 10/25/2011 |
| 8039300 | Reproducible resistance variable insulating memory devices and methods for forming same The present invention relates to the use of a shaped bottom electrode in a resistance variable memory device. The shaped bottom electrode ensures that the thickness of the insulating material at the tip of the bottom electrode is thinnest, creating the largest elect... | 10/18/2011 |
| 8039298 | Phase changeable memory cell array region and method of forming the same A phase changeable memory cell array region includes a lower interlayer insulating layer disposed on a semiconductor substrate. The region also includes a plurality of conductive plugs disposed through the lower interlayer insulating layer. The region also includes ... | 10/18/2011 |
| 8039297 | Plasma treating methods of fabricating phase change memory devices, and memory devices so fabricated Phase change memory devices may be fabricated by forming a first electrode on a substrate and forming a chalcogenide material on the first electrode. The chalcogenide material is plasma treated sufficiently to induce a plasma species throughout the chalcogenide mate... | 10/18/2011 |
| 8039299 | Method for fabricating an integrated circuit including resistivity changing material having a planarized surface An integrated circuit is fabricated by providing a preprocessed wafer including a first electrode, depositing a dielectric material over the preprocessed wafer, etching an opening in the dielectric material to expose a portion of the first electrode and depositing a... | 10/18/2011 |
| 8030129 | Method of fabricating nonvolatile memory device A method of manufacturing a nonvolatile memory device including forming on a lower insulating layer a first sacrificial pattern having first openings extending in a first direction, forming a second sacrificial pattern having second openings extending in a second di... | 10/04/2011 |
| 8030128 | Method to form high density phase change memory (PCM) top contact every two bits Embodiments of the present invention provide a method that includes providing a substrate including an emitter layer comprising a plurality of emitters, each emitter defining an axis, forming a heater layer above the emitter layer, and forming a phase change memory ... | 10/04/2011 |
| 8026125 | Phase change RAM device and method for fabricating the same Disclosed are a phase change RAM device and a method for fabricating a phase change RAM device, which can efficiently lower intensity of current required for changing a phase of a phase change layer. The method includes the steps of providing a semiconductor substra... | 09/27/2011 |
| 8017432 | Deposition of amorphous phase change material A method for formation of a phase change memory (PCM) cell includes depositing amorphous phase change material in a via hole, the via hole comprising a bottom and a top, such that the amorphous phase change material is grown on an electrode located at the bottom of ... | 09/13/2011 |
| 8017433 | Post deposition method for regrowth of crystalline phase change material Techniques for forming a phase change memory cell. An example method includes forming a bottom electrode within a substrate. The method includes forming a phase change layer above the bottom electrode. The method includes forming a capping layer and an insulator lay... | 09/13/2011 |
| 8012793 | Nonvolatile memory cell comprising a chalcogenide and a transition metal oxide A memory cell for use in integrated circuits comprises a chalcogenide feature and a transition metal oxide feature. Both the chalcogenide feature and transition metal oxide feature each have at least two stable electrical resistance states. At least two bits of data... | 09/06/2011 |
| 8008117 | Antimony and germanium complexes useful for CVD/ALD of metal thin films Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactur... | 08/30/2011 |
| 7993962 | I-shaped phase change memory cell A memory device includes two electrodes, vertically separated and having mutually opposed contact surfaces, between which lies a phase change cell. The phase change cell includes an upper phase change member, having a contact surface in electrical contact with the f... | 08/09/2011 |
| 7993961 | Layout structure in semiconductor memory device comprising global word lines, local word lines, global bit lines and local bit lines A line layout structure and method in a semiconductor memory device having a hierarchical structure are provided. In a semiconductor memory device having a global word line and a local word line, and a global bit line and a local bit line, and individually disposing... | 08/09/2011 |
| 7993963 | Phase change layer and method of manufacturing the same and phase change memory device comprising phase change layer and methods of manufacturing and operating phase change memory device Provided are a phase change layer and a method of forming the phase change layer and a phase change memory device including the phase change layer, and methods of manufacturing and operating the phase change memory device. The phase change layer may be formed of a q... | 08/09/2011 |
| 7989259 | Methods of manufacturing phase-changeable memory devices including upper and lower electrodes A phase-changeable memory device includes a substrate having a contact region on an upper surface thereof. An insulating interlayer on the substrate has an opening therein, and a lower electrode is formed in the opening. The lower electrode has a nitrided surface po... | 08/02/2011 |
| 7985617 | Methods utilizing microwave radiation during formation of semiconductor constructions Some embodiments include methods in which microwave radiation is used to activate dopant and/or increase crystallinity of semiconductor material during formation of a semiconductor construction. In some embodiments, the microwave radiation has a frequency of about 5... | 07/26/2011 |
| 7972895 | Memory cell device with coplanar electrode surface and method A memory device described herein includes a bit line having a top surface and a plurality of vias. The device includes a plurality of first electrodes each having top surfaces coplanar with the top surface of the bit line, the first electrodes extending through corr... | 07/05/2011 |
| 7943420 | Single mask adder phase change memory element A method of fabricating a phase change memory element within a semiconductor structure and a semiconductor structure having the same that includes etching an opening to an upper surface of a bottom electrode, the opening being formed of a height equal to a height of... | 05/17/2011 |
| 7939365 | Phase change memory device, manufacturing method thereof and operating method thereof A phase change memory (PCM) device, a manufacturing technique of making the PCM device, and a way of operating the PCM device is presented. The PCM device is structured to have a silicon on insulator type substrate that provides an advantage of thermally insulating ... | 05/10/2011 |
| 7939366 | Phase change memory devices and methods of forming the same A method of forming a phase change memory device includes forming a core pattern on a substrate, conformally forming a heat conductive layer on the substrate including the core pattern, anisotropically etching the heat conductive layer down to a top surface of the c... | 05/10/2011 |
