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| Number | Title | Issue Date |
| 8137902 | Method of manufacturing mechanical and micromechanical parts A method of manufacturing parts of a first material able to be etched from a substrate including at least one superficial layer of the first material, includes (a) forming a substantially uniform superficial layer of a second material at the surface of the superfici... | 03/20/2012 |
| 8110344 | Metal photoetching product and production method thereof A metal photoetching product comprising at least one large cavity of minor axis W1S, major axis W1L and depth D1 in a surface of the product, wherein one or more cavities are included inside at least one of the at least one large cavity,... | 02/07/2012 |
| 8105764 | Patterning process A pattern is formed through positive/negative reversal by coating a chemically amplified positive resist composition comprising an acid labile group-bearing resin, a photoacid generator, and an organic solvent onto a substrate, prebaking the resist composition, expo... | 01/31/2012 |
| 8101341 | Patterning process A pattern is formed by coating a chemically amplified positive resist composition comprising a resin comprising acid labile group-containing recurring units and a photoacid generator onto a substrate, drying to form a resist film, exposing the resist film to high-en... | 01/24/2012 |
| 8097401 | Self-forming top anti-reflective coating compositions and, photoresist mixtures and method of imaging using same A composition of matter. The composition of matter includes a polymer having an ethylenic backbone and comprising a first monomer having an aromatic moiety, a second monomer having a base soluble moiety or an acid labile protected base soluble moiety, and a third mo... | 01/17/2012 |
| 8088564 | Base soluble polymers for photoresist compositions Base soluble polymer comprising at least one sulfonyl group where at least one carbon atom at α-position and/or β-position and/or γ-position with respect to the sulfonyl group has a hydroxyl group, where the hydroxyl group is protected or unprotected are describe... | 01/03/2012 |
| 8048616 | Double patterning strategy for contact hole and trench in photolithography A method of lithography patterning includes forming a first resist pattern on a substrate, the first resist pattern including a plurality of openings therein on the substrate; forming a second resist pattern on the substrate and within the plurality of openings of t... | 11/01/2011 |
| 8012675 | Method of patterning target layer on substrate A method of patterning a target layer on a substrate is described. A patterned photoresist layer is formed over the target layer, wherein the patterned photoresist layer has unexposed parts as separate islands and each unexposed part has a low proton concentration a... | 09/06/2011 |
| 8003310 | Masking techniques and templates for dense semiconductor fabrication A template comprising pitch multiplied and non-pitch multiplied features is configured for use in imprint lithography. On a first substrate, a first pattern is formed using pitch multiplication and a second pattern is formed using photolithography without pitch mult... | 08/23/2011 |
| 7998663 | Pattern formation method After forming an underlying layer film and an intermediate layer film are formed over a substrate, a resist pattern formed by first pattern exposure using a first resist film and second pattern exposure using a second resist film is transferred onto the intermediate... | 08/16/2011 |
| 7981594 | Hardmask composition having antirelective properties and method of patterning material on susbstrate using the same A hardmask composition includes an organic solvent and one or more aromatic ring-containing polymers represented by Formula 1, 2 and 3: ... | 07/19/2011 |
| 7947434 | Process for forming a plated film, and process for fabricating a magnetic device and perpendicular magnetic recording head The process of forming a plated film according to the invention is designed such that the surface asperities of the inorganic film formed by the tracing of a standing wave occurring at the inner wall surface of the first opening in the resist at the resist pattern-f... | 05/24/2011 |
| 7932017 | Method of double patterning a thin film using a developable anti-reflective coating and a developable organic planarization layer A method of double patterning a thin film is described. The method comprises forming a thin film to be patterned on a substrate, forming an organic planarization layer (OPL) on the thin film, forming an anti-reflective coating (ARC) layer on the OPL, and forming a m... | 04/26/2011 |
| 7906275 | Self-aligned spatial frequency doubling In accordance with the invention, there are methods for self-aligned spatial frequency doubling in one dimension and also in two dimension. The method for self-aligned spatial frequency doubling in one dimension can include forming a film stack over a substrate, whe... | 03/15/2011 |
| 7883839 | Method and apparatus for nano-pantography A method is provided for creating a plurality of substantially uniform nano-scale features in a substantially parallel manner in which an array of micro-lenses is positioned on a surface of a substrate, where each micro-lens includes a hole such that the bottom of t... | 02/08/2011 |
| 7871761 | Resist lower layer material, resist lower layer substrate comprising the material and method for forming pattern Provided is a method for forming a resist lower layer material for use in a multilayer resist process, especially two-layer resist process or three-layer resist process, having a function of neutralizing an amine contaminant from a substrate, thereby reducing a harm... | 01/18/2011 |
| 7862990 | Polymer having antireflective properties and high carbon content, hardmask composition including the same, and process for forming a patterned material layer An antireflective hardmask composition includes an organic solvent, an initiator, and at least one polymer represented by Formulae A, B, or C as set forth in the specification. ... | 01/04/2011 |
| 7842451 | Method of forming pattern Disclosed is a method of forming a pattern. A first organic polymer layer is formed on a substrate on which an underlying layer, and then a second organic polymer layer, which has an opening partially exposing the first organic polymer layer, is formed on the first ... | 11/30/2010 |
| 7824843 | Pattern forming method, electronic device manufacturing method and electronic device On a film as an object of processing, a first positive photo-resist having a dense hole pattern is formed. On the first positive photo-resist, a second positive photo-resist is formed to fill each of the plurality of holes of the pattern. To the second photo-resist,... | 11/02/2010 |
| 7811747 | Method of patterning an anti-reflective coating by partial developing A method of patterning a thin film is described. The method comprises forming a thin film to be patterned on a substrate, forming a developable anti-reflective coating (ARC) layer on the thin film, and forming a mask layer on the developable ARC layer. Thereafter, t... | 10/12/2010 |
| 7767386 | Method of patterning an organic planarization layer A method of patterning a thin film is described. The method comprises forming a thin film to be patterned on a substrate, forming a developable organic planarization layer (OPL) on the thin film, forming a developable anti-reflective coating (ARC) layer on the devel... | 08/03/2010 |
| 7745104 | Bottom resist layer composition and patterning process using the same There is disclosed a bottom resist layer composition for a multilayer-resist film used in lithography comprising, at least, a polymer comprising a repeating unit represented by the following general formula (1). Thereby, there can be provided a bottom resist layer c... | 06/29/2010 |
| 7687228 | Antireflection film composition and patterning process using the same An antireflection film composition, wherein an etching speed is fast, thus, when used as a resist lower layer, a film loss of a resist pattern and deformation of the pattern during etching can be minimized, and because of a high crosslinking density, a dense film ca... | 03/30/2010 |
| 7655389 | Composition for forming a photosensitive organic anti-reflective layer and method of forming a pattern using the same A composition for forming a photosensitive organic anti-reflective layer includes about 0.5 to about 5 percent by weight of an acid-labile thermal cross-linking agent that is decomposed by an epoxy group and a photo-acid generator, about 10 to about 22 percent by we... | 02/02/2010 |
| 7625695 | Polymers for anti-reflective coatings, anti-reflective coating compositions and methods of forming a pattern using the same An anti-reflective coating composition includes a solvent and about 20 to about 35 percent by weight of a polymer prepared by a condensation reaction of an acrylate polymer including a hydroxyl group with a derivative of muramic acid and a derivative of mandelic aci... | 12/01/2009 |
| 7625694 | Selective provision of a diblock copolymer material Disclosed herein are techniques for using diblock copolymer (DBCP) films as etch masks to form small dots or holes in integrated circuit layers. In an embodiment, the DBCP film is deposited on the circuit layer to be etched. Then the DCBP film is confined to define ... | 12/01/2009 |
| 7575855 | Method of forming pattern Disclosed is a method of forming a pattern. A first organic polymer layer is formed on a substrate on which an underlying layer, and then a second organic polymer layer, which has an opening partially exposing the first organic polymer layer, is formed on the first ... | 08/18/2009 |
| 7510820 | Resist undercoat-forming material and patterning process In the lithographic multilayer resist process, a material comprising a copolymer of a hydroxy-containing vinylnaphthalene with hydroxy-free olefins is useful in forming a resist undercoat. The undercoat-forming material has a high transparency and optimum values of ... | 03/31/2009 |
| 7435534 | Method for manufacturing semiconductor device A method for manufacturing a semiconductor device effectively removes a solvent of a bottom antireflective coating film is using a porous material so as to prevent acid in a photoresist film from reacting with the solvent during a post exposure baking (PEB) process.... | 10/14/2008 |
| 7435537 | Fluorinated half ester of maleic anhydride polymers for dry 193 nm top antireflective coating application The present invention discloses a composition suitable for use as a top antireflective coating and barrier layer for 193 nm lithography. The inventive composition is soluble in aqueous base solutions and has low refractive index at 193 nm. The inventive composition ... | 10/14/2008 |
| 7432026 | Method of manufacturing dichroic filter array A method of manufacturing a dichroic filter array is provided and comprises forming a first dichroic filter material layer on a substrate, and then forming a patterned photoresist layer on the first dichroic filter material layer. The exposed portion of the first di... | 10/07/2008 |
| 7425403 | Composition for forming anti-reflective coating for use in lithography A composition for forming anti-reflective coating for use in a lithographic process in manufacture of a semiconductor device, comprising as a component a resin containing cyanuric acid or a derivative thereof, or a resin containing a structural unit derived from cya... | 09/16/2008 |
| 7419759 | Photoresist composition and method of forming a pattern using the same The photoresist composition of the present invention includes a solvent mixture, a resin, a photo acid generator, and a quencher, the solvent mixture comprising a first solvent containing an ether compound and a second solvent having a polarity stronger than the fir... | 09/02/2008 |
| 7419768 | Methods of fabricating integrated circuitry The invention includes methods of fabricating integrated circuitry and semiconductor processing polymer residue removing solutions. In one implementation, a method of fabricating integrated circuitry includes forming a conductive metal line over a semiconductor subs... | 09/02/2008 |
| 7413846 | Fabrication methods and structures for micro-reservoir devices Methods are provided for making a multi-reservoir device comprising (i) patterning one or more photoresist layers on a substrate; (ii) depositing onto the substrate at least one metal layer by a sputtering process to form a plurality of reservoir caps and conductive... | 08/19/2008 |
| 7399979 | Exposure method, exposure apparatus, and method for producing device An exposure system includes an exposure part for irradiating a resist film formed on a substrate with exposing light through a mask with a liquid provided on the resist film. The system also includes a liquid supply part for supplying the liquid to the exposure part... | 07/15/2008 |
| 7387869 | Method of forming pattern for semiconductor device A method of forming a pattern for a semiconductor device is disclosed. According to the method, a lower photoresist layer is formed on a lower layer and an upper photoresist pattern including a silylated layer is formed on the lower photoresist layer. The upper phot... | 06/17/2008 |
| 7381943 | Neutral particle beam processing apparatus The present invention relates to a neutral particle beam processing apparatus. More specifically, the present invention relates to a neutral particle beam processing apparatus comprising a plasma discharging space inside which processing gases are converted to plasm... | 06/03/2008 |
| 7371485 | Multi-step process for etching photomasks Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a photolithographic reticle including positioning the reticle on a support member in a proce... | 05/13/2008 |
| 7368065 | Implants with textured surface and methods for producing the same Compositions and methods are provided for preparing a metal substrate having a uniform textured surface with a plurality of indentations with a diameter in the nanometer and micrometer range. The textured surface is produced by exposing the substrate to an etching f... | 05/06/2008 |
