Quotables
"To place a man in a multi-stage rocket and project him into the controlling gravitational field of the moon where the passengers can make scientific observations, perhaps land alive, and then return to earth--all that constitutes a wild dream worthy of Jules Verne. I am bold enough to say that such a man-made voyage will never occur regardless of all future advances."
Lee deForest, American radio pioneer ; 1957
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| Number | Title | Issue Date |
| 8168375 | Patterning method Disclosed is a patterning method including: forming a first film on a substrate; forming a multi-layered film including a resist film on the first film; forming a patterned resist film having a preset pattern by patterning the resist film by photolithography; formin... | 05/01/2012 |
| 8003307 | Photo mask and method for fabricating image sensor using the same A method for fabricating an image sensor includes forming an insulation layer over a substrate in a logic circuit region and a pixel region, forming a photoresist over the insulation layer, patterning the photoresist to form a photoresist pattern where the insulatio... | 08/23/2011 |
| 7879533 | Etching residue removal method and semiconductor device fabrication method using this method An etching residue removal method includes a cleaning sequence. Preferably, the cleaning sequence has a first washing processing, first drying processing, stripper processing, rinsing processing, second washing processing and second drying processing. In the first w... | 02/01/2011 |
| 7867693 | Methods for forming device structures on a wafer Methods for forming device structures on a wafer are provided. One method includes transferring approximately an inverse of patterned features formed in a positive resist layer on the wafer to a device material on the wafer to form the device structures in the devic... | 01/11/2011 |
| 7851138 | Patterning a surface comprising silicon and carbon Patterning a surface, comprising at least one feature having silicon coupled to a substrate, is described herein. In one embodiment a method is described for patterning a surface which comprises at least one feature having silicon and at least one feature having car... | 12/14/2010 |
| 7560222 | Si-containing polymers for nano-pattern device fabrication A resist polymer that has nano-scale patterns located therein that are in the form of sub lithographic hollow pores (or openings) that are oriented in a direction that is substantially perpendicular with that of its major surfaces (top and bottom) is provided. Such ... | 07/14/2009 |
| 7439010 | Alkali-soluble siloxane polymer, positive type resist composition, resist pattern, process for forming the same, electronic device and process for manufacturing the same A positive type resist composition having an alkali-soluble siloxane polymer expressed by the following Formula (1), a photosensitive compound, and a 1 μm thick resist film formed of the positive type resist composition which has 5% to 60% of transmittance to i-lin... | 10/21/2008 |
| 7435537 | Fluorinated half ester of maleic anhydride polymers for dry 193 nm top antireflective coating application The present invention discloses a composition suitable for use as a top antireflective coating and barrier layer for 193 nm lithography. The inventive composition is soluble in aqueous base solutions and has low refractive index at 193 nm. The inventive composition ... | 10/14/2008 |
| 7425403 | Composition for forming anti-reflective coating for use in lithography A composition for forming anti-reflective coating for use in a lithographic process in manufacture of a semiconductor device, comprising as a component a resin containing cyanuric acid or a derivative thereof, or a resin containing a structural unit derived from cya... | 09/16/2008 |
| 7419763 | Near-field exposure photoresist and fine pattern forming method using the same A near-field photoresist for formation of a fine pattern with by near-field exposure includes an alkali-soluble novalac resin, a diazyde-type photosensitizer which is photoreactive by near-field exposure, a photoacid generator which generates acid by the near-field ... | 09/02/2008 |
| 7416833 | Photoresist undercoat-forming material and patterning process An undercoat-forming material comprising a copolymer derived from an indene and a compound having a hydroxyl or epoxy group and a double bond, an organic solvent, an acid generator, and a crosslinker, optionally combined with an intermediate layer having an antirefl... | 08/26/2008 |
| 7405161 | Method for fabricating a semiconductor device Method for fabricating a semiconductor device in which a by-product of etching is deposited on a photoresist film for using as a mask. The method for fabricating a semiconductor device includes the steps of depositing a polysilicon, and a bottom anti-refection coati... | 07/29/2008 |
| 7396475 | Method of forming stepped structures employing imprint lithography The present invention provides a method for forming a stepped structure on a substrate that features transferring, into the substrate, an inverse shape of the stepped structure disposed on the substrate. ... | 07/08/2008 |
| 7393794 | Pattern formation method After forming a resist film including a hygroscopic compound, pattern exposure is performed by selectively irradiating the resist film with exposing light while supplying water onto the resist film. After the pattern exposure, the resist film is developed so as to f... | 07/01/2008 |
| 7381508 | Integrated circuit semiconductor device with overlay key and alignment key and method of fabricating the same An integrated circuit semiconductor device including a cell region formed in a first portion of a silicon substrate, the cell region including a first trench formed in the silicon substrate, a first buried insulating layer filled in the first trench, a first insulat... | 06/03/2008 |
| 7372156 | Method to fabricate aligned dual damascene openings An aligned dual damascene opening structure, comprising the following. A structure having a metal structure formed thereover. A patterned layer stack over the metal structure; the layer stack comprising, in ascending order: a patterned bottom etch stop layer; a patt... | 05/13/2008 |
| 7364836 | Dual damascene process A method of photoresist processing includes forming a first photoresist layer over composite layers of dielectric insulation and a top insulating layer and patterning a via hole pattern in the first photoresist layer by exposing to radiation of a first sensitivity. ... | 04/29/2008 |
| 7361453 | Method for creating a pattern in a material and semiconductor structure processed therewith A method of manufacturing a semiconductor device with precision patterning is disclosed. A structure of a small dimension is created in a material, such as a semiconductor material, using a first and a second pattern, the patterns being identical but displaced over ... | 04/22/2008 |
| 7358104 | Contact portion of semiconductor device, and thin film transistor array panel for display device including the contact portion A method for manufacturing a semiconductor device including forming a first wire on a substrate, forming a lower film on the first wire, forming a photosensitive pattern on the lower film using a photosensitive material, forming contact holes for exposing the first ... | 04/15/2008 |
| 7344826 | Method for forming a capacitor In a method for forming a photoresist pattern, a method for forming a capacitor, and a capacitor manufactured using the same, a light is selectively irradiated onto a selected portion of a photoresist film formed on a substrate. An interfered light generated from th... | 03/18/2008 |
| 7335462 | Method of depositing an amorphous carbon layer A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit f... | 02/26/2008 |
| 7332262 | Photolithography scheme using a silicon containing resist A method for forming a patterned amorphous carbon layer in a semiconductor stack, including forming an amorphous carbon layer on a substrate and forming a silicon containing photoresist layer on top of the amorphous carbon layer. Thereafter, the method includes deve... | 02/19/2008 |
| 7329479 | Process for production of electroluminescent element and electroluminescent element A process of producing an electroluminescent element is provided. The production process comprises repeating at least twice a step of forming an electroluminescent layer comprising a buffer layer and a luminescent layer by patterning using a photolithographic proces... | 02/12/2008 |
| 7326523 | Low refractive index polymers as underlayers for silicon-containing photoresists A new underlayer composition that exhibits high etch resistance and improved optical properties is disclosed. The underlayer composition comprises a vinyl or acrylate polymer, such as a methacrylate polymer, the polymer comprising at least one substituted or unsubst... | 02/05/2008 |
| 7323292 | Process for using photo-definable layers in the manufacture of semiconductor devices and resulting structures of same A process and related structure are disclosed for using photo-definable layers that may be selectively converted to insulative materials in the manufacture of semiconductor devices, including for example dynamic random access memories (DRAMs), synchronous DRAMs (SDR... | 01/29/2008 |
| 7320855 | Silicon containing TARC/barrier layer A top anti-reflective coating material (TARC) and barrier layer, and the use thereof in lithography processes, is disclosed. The TARC/barrier layer may be especially useful for immersion lithography using water as the imaging medium. The TARC/barrier layer comprises... | 01/22/2008 |
| 7306742 | Patterning method, patterning apparatus, patterning template, and method for manufacturing the patterning template A template 1 is brought close to or in contact with a surface to be patterned 111 and patterns are formed with liquid 62 on the surface 111. This method comprises the steps of: bringing the template 1 close to or essentially in con... | 12/11/2007 |
| 7303855 | Photoresist undercoat-forming material and patterning process An undercoat-forming material comprising a novolak resin having a fluorene or tetrahydrospirobiindene structure, an organic solvent, an acid generator, and a crosslinker, optionally combined with an intermediate layer having an antireflective effect, has an absorpti... | 12/04/2007 |
| 7303859 | Photoresist, photolithography method using the same, and method for producing photoresist There is provided a positive photoresist for near-field exposure excellent in light utilization efficiency even with small layer thickness of the photoresist layer for image formation, and allowing for reduced pattern edge roughness, and a photolithography method in... | 12/04/2007 |
| 7300828 | Method of manufacturing a liquid crystal display device Disclosed is a photoresist film which is formed in a manner of covering at least a source electrode, a source line, a pixel electrode, a drain electrode, a drain line, a semiconductor film and a protective film, and further covering a gate insulting film in their vi... | 11/27/2007 |
| 7297466 | Method of forming a photoresist pattern and method for patterning a layer using a photoresist An organic anti-reflective coating (ARC) is formed over a surface of a semiconductor substrate, and a resist layer including a photosensitive polymer is formed on the ARC. The photoresistive polymer contains a hydroxy group. The resist layer is then subjected to exp... | 11/20/2007 |
| 7297452 | Photosensitive resin composition, thin film panel made with photosensitive composition, and method for manufacturing thin film panel A photosensitive resin composition includes an alkali-soluble resin, a quinone diazide, a surfactant, and a solvent. The surfactant includes an organic fluorine compound having the structure a first silicone compound having... | 11/20/2007 |
| 7294453 | Electronic device manufacture Disclosed are methods of manufacturing electronic devices, particularly integrated circuits. Such methods include the use of low dielectric constant material prepared by using a removable porogen material. ... | 11/13/2007 |
| 7291446 | Method and system for treating a hard mask to improve etch characteristics During pattern transfer to a film stack, the hard mask layer, such as a tunable etch resistant antireflective coating (TERA), is consumed when etching the underling layer(s), leading to reduced etch performance and potential damage to the underlying layer(s), such a... | 11/06/2007 |
| 7285781 | Characterizing resist line shrinkage due to CD-SEM inspection A CD-SEM (critical dimension-scanning electron microscope) system may utilize a technique for characterizing and reducing shrinkage carryover due to CD-SEM measurements. The system may identify the affects of CD-SEM measurements on the resist and adjust the operatin... | 10/23/2007 |
| 7276454 | Application of impressed-current cathodic protection to prevent metal corrosion and oxidation A new method is provided for the processing of metals, most notably copper, such that damage to exposed surfaces of these metals is prevented. During a step of semiconductor processing, which results in exposing a metal surface to a wet substance having a pH value, ... | 10/02/2007 |
| 7259091 | Technique for forming a passivation layer prior to depositing a barrier layer in a copper metallization layer By performing a wet chemical process after etching a via, contaminations may be removed and a thin passivation layer may be formed that may then be readily removed in a subsequent sputter etch process for forming a barrier/adhesion layer. In a particular embodiment,... | 08/21/2007 |
| 7256130 | Process for defining a chalcogenide material layer, in particular in a process for manufacturing phase change memory cells A process for defining a chalcogenide material layer using a chlorine based plasma and a mask, wherein the portions of the chalcogenide material layer that are not covered by the mask are etched away. In a phase change memory cell having a stack of a chalcogenide ma... | 08/14/2007 |
| 7229915 | Method for manufacturing semiconductor device A first insulating film, a second insulating film, a third insulating film, an antireflective film, and a resist film are formed in this order on a lower-layer wiring. After dry etching the third insulating film and the second insulating film, using the resist film ... | 06/12/2007 |
| 7223526 | Method of depositing an amorphous carbon layer A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit f... | 05/29/2007 |
