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| Number | Title | Issue Date |
| 8182981 | Pattern forming method A pattern forming method has forming a first resist film on a processed film, patterning the first resist film into a first resist pattern, forming a first film containing a photo acid generator so as to cover the first resist pattern, forming a second resist film s... | 05/22/2012 |
| 8158333 | Manufacturing method of semiconductor device A manufacturing method includes forming a stacked film including first/second/third layers on a substrate, forming a first resist pattern on the stacked film, forming a first film pattern by etching the first layer through the first resist pattern, removing the firs... | 04/17/2012 |
| 8153349 | Polymer composition, hardmask composition having antireflective properties, and associated methods A polymer composition includes an aromatic ring-containing polymer represented by Formula 1: wherein m and n satisfy the relations 1≦m | 04/10/2012 |
| 8153348 | Process sequence for formation of patterned hard mask film (RFP) without need for photoresist or dry etch Method and systems for patterning a hardmask film using ultraviolet light is disclosed according to one embodiment of the invention. Embodiments of the present invention alleviate the processing problem of depositing and etching photoresist in order to produce a har... | 04/10/2012 |
| 8142986 | Method of forming fine patterns of semiconductor device A method of forming fine patterns of a semiconductor device, in which a plurality of conductive lines formed in a cell array region are integrally formed with contact pads for connecting the conductive lines to a peripheral circuit. In this method, a plurality of mo... | 03/27/2012 |
| 8129093 | Prevention of photoresist scumming A photo acid generator (PAG) or an acid is used to reduce resist scumming and footing. Diffusion of acid from photoresist into neighbors causes a decreased acid level, and thus causes resist scumming. An increased acid layer beneath the resist prevents acid diffusio... | 03/06/2012 |
| 8129092 | Resist pattern thickening material and process for forming resist pattern, and semiconductor device and method for manufacturing the same The present invention provides a resist pattern thickening material, which can utilize ArF excimer laser light; which, when applied over a resist pattern such as an ArF resist having a line pattern or the like, can thicken the resist pattern regardless of the size o... | 03/06/2012 |
| 8124322 | Method for manufacturing semiconductor device, and method for processing etching-target film The present invention provides a method for processing an etching-target film, which can achieve both of a highly precise dry etching process and a reduction of LER. A method for processing an etching-target film, comprises: forming, in sequence from the bottom, an ... | 02/28/2012 |
| 8119333 | Lithographic method A method for providing a pattern on a substrate is disclosed. The method includes providing a first pattern in a first layer of photoresist and a first layer of bottom anti-reflective coating material on the substrate, etching the first pattern into the substrate, p... | 02/21/2012 |
| 8110342 | Method for forming an opening A method for forming an opening is disclosed. First, a semiconductor substrate is provided, in which the semiconductor substrate includes at least one metal interconnects therein. A stacked film is formed on the semiconductor substrate, in which the stacked film inc... | 02/07/2012 |
| 8105759 | Photosensitive resin composition, and, photosensitive element, method for forming resist pattern, method for manufacturing printed wiring board and method for manufacturing partition wall for plasma display panel using the composition A photosensitive resin composition comprising (A) a binder polymer, (B) a photopolymerizing compound with a polymerizable ethylenic unsaturated bond, (C) a photoradical polymerization initiator containing a 2,4,5-triarylimidazole dimer or its derivative, and (D) a c... | 01/31/2012 |
| 8097400 | Method for forming an electronic device Provided is a low cost system and method for forming electronic devices, especially large surface area devices. The process of imprint lithography is combined with alternate manufacturing techniques to fabricate the devices. Initially, a template imprints a three-di... | 01/17/2012 |
| 8076056 | Method of making sub-resolution pillar structures using undercutting technique A method of making a device includes forming an underlying mask layer over an underlying layer, forming a first mask layer over the underlying mask layer, patterning the first mask layer to form first mask features, undercutting the underlying mask layer to form und... | 12/13/2011 |
| 8062833 | Chalcogenide layer etching method A protective layer is deposited on a chalcogenide layer and a patterned photoresist layer is formed on the protective layer. The patterned photoresist layer and the protective layer are etched to form openings therethrough to the chalcogenide layer to create etched ... | 11/22/2011 |
| 8062834 | Method for manufacturing transparent electrode pattern and method for manufacturing electro-optic device having the transparent electrode pattern Provided are a method for manufacturing a transparent electrode pattern and a method for manufacturing an electro-optic device having the transparent electrode pattern. The method for manufacturing the transparent electrode pattern includes forming a transparent ele... | 11/22/2011 |
| 8057987 | Patterning method of semiconductor device The invention relates to a patterning method of a semiconductor device. In an aspect of the invention, the method may include forming a target etch layer on a semiconductor substrate, forming a photoresist film on the target etch layer, forming photoresist patterns ... | 11/15/2011 |
| 8048615 | Silicon-containing resist underlayer coating forming composition for forming photo-crosslinking cured resist underlayer coating There is provided an underlayer coating that is used as an underlayer of photoresists in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to the photoresists depending on the type of etching gas, does... | 11/01/2011 |
| 8043796 | Manufacturing method of semiconductor device A light absorption layer is formed over a substrate, the light absorption layer is selectively irradiated with a laser beam, and a region of the light absorption layer, which is irradiated with the laser beam, is removed. By adding an impurity element imparting one ... | 10/25/2011 |
| 8034544 | Method for forming fine contact hole pattern of semiconductor device A method for forming a fine contact hole of a semiconductor device comprises performing two-step etching processes using a first exposure mask including a plurality of rectangular light transmitting regions each having a given pitch and a second exposure mask includ... | 10/11/2011 |
| 8021828 | Photoresist compositions and methods related to near field masks A structure and a photolithography method. The method includes forming a first layer of a first photoresist including a first polymer and a first photosensitive acid generator. A second layer of a second photoresist, including a second polymer having at least one ph... | 09/20/2011 |
| 7989145 | Method for forming fine pattern of semiconductor device A method for forming a fine pattern of a semiconductor device comprises forming a spin-on-carbon layer over an underlying layer, forming an anti-reflection pattern including a silicon containing polymer with a first etching mask pattern, forming a photoresist patter... | 08/02/2011 |
| 7977035 | Method for forming fine pattern of semiconductor device A method for manufacturing a fine pattern of a semiconductor device comprising: forming hard mask patterns having a thickness of t1 over an underlying layer; forming a light penetrable thin film having a thickness of t2 over the hard mask patte... | 07/12/2011 |
| 7972766 | Method for forming fine pattern of semiconductor device A method for forming a fine pattern of a semiconductor device comprises: forming anti-reflection coating patterns over an underlying layer of a semiconductor substrate using an anti-reflection coating composition comprising a silicon-containing polymer; forming a ph... | 07/05/2011 |
| 7971158 | Spacer fill structure, method and design structure for reducing device variation A design structure is provided for spacer fill structures and, more particularly, spacer fill structures, a method of manufacturing and a design structure for reducing device variation is provided. The structure includes a plurality of dummy fill shapes in different... | 06/28/2011 |
| 7960095 | Use of mixed bases to enhance patterned resist profiles on chrome or sensitive substrates Resist compositions having good footing properties even on difficult substrates are obtained by using a combination of base additives including a room temperature solid base, and a liquid low vapor pressure base. The compositions are especially useful on metal subst... | 06/14/2011 |
| 7960096 | Sublithographic patterning method incorporating a self-aligned single mask process A method of implementing sub-lithographic patterning of a semiconductor device includes forming a first set of patterned features with a single lithography step, the initial set of patterned features characterized by a linewidth and spacing therebetween; forming a f... | 06/14/2011 |
| 7955784 | Photoresist composition and method of manufacturing a thin-film transistor substrate using the same A photoresist composition includes about 100 parts by weight of resin mixture including novolak resin and acryl resin and about 10 parts to about 50 parts by weight of naphthoquinone diazosulfonic acid ester. A weight-average molecular weight of the novolak resin is... | 06/07/2011 |
| 7947432 | Pattern formation method After forming a lower layer film, an intermediate layer film and a first resist film on a substrate, a first resist pattern is formed by performing first exposure. Then, after a first intermediate layer pattern is formed by transferring the first resist pattern onto... | 05/24/2011 |
| 7943285 | Pattern formation method After formation of an underlayer film and an intermediate layer film, a resist pattern formed by the first pattern exposure with the first resist film and the second pattern exposure with the second resist film is transferred to the intermediate layer film. The unde... | 05/17/2011 |
| 7943286 | Reproducible, high yield method for fabricating ultra-short T-gates on HFETs A method for fabricating ultra-short T-gates on heterojunction field effect transistors (HFETs) comprising the steps of (a) providing a coating of three layers of resists, with polymethylmethacrylate (PMMA) with high molecular weight on the bottom, polydimethylgluta... | 05/17/2011 |
| 7935477 | Double patterning strategy for contact hole and trench A method of lithography patterning includes forming a first resist pattern on a substrate, the first resist pattern including at least one opening therein on the substrate; curing the first resist pattern; forming a second resist pattern on the substrate; forming a ... | 05/03/2011 |
| 7927782 | Simplified double mask patterning system One embodiment of the present invention relates to a method for which a two mask lithography process can be used to reduce design density. The two mask process uses a first mask to expose a first photoresist layer located above a hard mask layer. The first photoresi... | 04/19/2011 |
| 7923200 | Composition for coating over a photoresist pattern comprising a lactam The present invention relates to an aqueous coating composition for coating a photoresist pattern comprising a polymer containing a lactam group of structure (1) where R1 is independently selected hydrogen, C | 04/12/2011 |
| 7919228 | Method of forming pattern of semiconductor device The present invention relates to a method of forming a pattern of a semiconductor device. According to the method, patterns are formed on a substrate. First photoresist patterns are formed in regions where the patterns are opened. The first photoresist patterns are ... | 04/05/2011 |
| 7914975 | Multiple exposure lithography method incorporating intermediate layer patterning A method of patterning a semiconductor substrate includes creating a first set of patterned features in a first inorganic layer; creating a second set of patterned features in one of the first inorganic layer and a second inorganic layer; and transferring, into an o... | 03/29/2011 |
| 7910288 | Mask material conversion The dimensions of mask patterns, such as pitch-multiplied spacers, are controlled by controlled growth of features in the patterns after they are formed. To form a pattern of pitch-multiplied spacers, a pattern of mandrels is first formed overlying a semiconductor s... | 03/22/2011 |
| 7906272 | Method of forming a pattern of a semiconductor device In a method of forming patterns of a semiconductor device, a to-be-etched layer is formed on a semiconductor substrate. First etch mask patterns are formed over the to-be-etched layer. An auxiliary layer is formed on the first etch mask patterns and the to-be-etched... | 03/15/2011 |
| 7901869 | Double patterning with a double layer cap on carbonaceous hardmask Methods to etch features in a substrate with a multi-layered double patterning mask. The multi-layered double patterning mask includes a carbonaceous mask layer, a first cap layer on the carbonaceous mask layer and a second cap layer on the first cap layer. After fo... | 03/08/2011 |
| 7883836 | Method for forming fine pattern with a double exposure technology The method for forming a fine pattern of a semiconductor device includes depositing a photoresist film over a semiconductor substrate having an underlying layer, performing a first exposure process using a first exposure mask to form a first photoresist pattern, the... | 02/08/2011 |
| 7883835 | Method for double patterning a thin film A method of double patterning a thin film is described. The method comprises forming a thin film to be patterned on a substrate, forming an anti-reflective coating (ARC) layer on the thin film, and forming a mask layer on the ARC layer. Thereafter, the mask layer is... | 02/08/2011 |
