"The abolishment of pain in surgery is a chimera. It is absurd to go on seeking it...knife and pain are two words in surgery that must forever be associated in the consciousness of the patient."
Dr. Alfred Velpeau, French surgeon ; 1839
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| Number | Title | Issue Date |
| 8187795 | Patterning methods for stretchable structures Described herein are processing techniques for fabrication of stretchable and/or flexible electronic devices using laser ablation patterning methods. The laser ablation patterning methods utilized herein allow for efficient manufacture of large area (e.g., up to 1 m... | 05/29/2012 |
| 8178284 | Method of forming pattern A method of forming a pattern including: forming an underlayer film on a support using an underlayer film-forming material, forming a hard mask on the underlayer film using a silicon-based hard mask-forming material, forming a first resist film by applying a chemica... | 05/15/2012 |
| 8173355 | Gradient colored mask The invention relates to a process for forming a structure comprising: (a) providing a transparent support; (b) forming a color mask having a selected absorption spectral range wherein the color mask has an effectively transparent portion and a partially absorptive ... | 05/08/2012 |
| 8168372 | Method of creating photolithographic structures with developer-trimmed hard mask Novel, developer-soluble, hard mask compositions and methods of using those compositions to form microelectronic structures are provided. The composition comprises the compound a compound for controlling development rate, a... | 05/01/2012 |
| 8168373 | Method for fabricating 3D microstructure A method for fabricating 3D microstructure is disclosed. A matching fluid is arranged between the mask and the photoresist layer. When the mask and photoresist layer perform the relative scanning and exposure process simultaneously, the matching fluid will reduce th... | 05/01/2012 |
| 8148050 | Method for fabricating probe needle tip of probe card Disclosed herein is a method for fabricating a probe needle tip of a probe card, in which, in order to prevent a poor grinding effect caused by irregular removal or flexibility of the photoresists laminated to be high in the course of polishing a first metal loaded ... | 04/03/2012 |
| 8148051 | Method and system for manufacturing openings on semiconductor devices A method and system to form openings comprises an exposure apparatus and a mask to selectively expose a semiconductor substrate to a radiation source to transfer assist feature patterns and primary feature patterns to a photosensitive layer of the substrate. A heati... | 04/03/2012 |
| 8148049 | Ink jet recording head and manufacturing method of the same A manufacturing method of an ink jet recording head includes steps of forming a liquid flow path mold material of a soluble resin on a substrate on which an energy generating element is formed, the energy generating element being configured to generate energy for us... | 04/03/2012 |
| 8142985 | Method for manufacturing semiconductor device A method for manufacturing a semiconductor device including: forming a resist film 11 on a film to be processed 32; baking the resist film 11; performing immersion exposure on the resist film 11 after the baking; performing post exposure ... | 03/27/2012 |
| 8142984 | Lithographically patterned nanowire electrodeposition Lithographically patterned nanowire electrodeposition (LPNE) combines attributes of photolithography with the versatility of bottom-up electrochemical synthesis. Photolithography is employed to define the position of a sacrificial nanoband electrode, preferably form... | 03/27/2012 |
| 8133659 | On-track process for patterning hardmask by multiple dark field exposures This invention provides methods of creating via or trench structures on a developer-soluble hardmask layer using a multiple exposure-development process. The hardmask layer is patterned while the imaging layer is developed. After the imaging layer is stripped using ... | 03/13/2012 |
| 8133660 | Method of manufacturing a coordinate detector A method of manufacturing a coordinate detector having a resistive film and a common electrode for applying a voltage to the resistive film is disclosed that includes the steps of (a) applying a photoresist onto the resistive film formed on a substrate formed of an ... | 03/13/2012 |
| 8124321 | Etching method for use in deep-ultraviolet lithography In a lithography process using an ultraviolet process, the applied ultraviolet resist can be removed by intentionally condensing the ultraviolet resist before removing the ultraviolet resist. ... | 02/28/2012 |
| 8124320 | Method and apparatus for surface tension control in advanced photolithography A method and apparatus are used for cleaning and drying a semiconductor wafer. Within a sealable chamber, a wafer having photoresist features thereon is spun while a cleaning fluid is applied to a top surface of the semiconductor wafer to clean off excess photoresis... | 02/28/2012 |
| 8119332 | Method for manufacturing coordinate detector A method for manufacturing a coordinate detector having a resistive film formed on a substrate formed of an insulating material and a common electrode for applying a voltage to the resistive film. The substrate includes a quadrangular shape. The method includes the ... | 02/21/2012 |
| 8114576 | Method for fabricating electrical circuitry on ultra-thin plastic films In accordance with the teachings of one embodiment of the present disclosure, a method of forming high-density metal interconnects on flexible, thin-film plastic includes laminating a dry photoresist layer to a substrate. The photoresist-laminated substrate is baked... | 02/14/2012 |
| 8105758 | Microphotonic maskless lithography A maskless lithography system and method to expose a pattern on a wafer by propagating a photon beam through a waveguide on a substrate in a plane parallel to a top surface of the wafer. ... | 01/31/2012 |
| 8105757 | Method of making a semiconductor device Disclosed is a method of making a semiconductor device in which a main pattern is formed through a photolithography process over a low-density pattern area having a relatively small number of patterns to be formed in certain areas as compared to the other areas. Acc... | 01/31/2012 |
| 8084190 | Process for producing sublithographic structures A layer structure and process for providing sublithographic structures are provided. A first auxiliary layer is formed over a surface of a carrier layer. A lithographically patterned second auxiliary layer structure is formed on a surface of the first auxiliary laye... | 12/27/2011 |
| 8080364 | Pattern formation method After forming a resist film made from a chemically amplified resist material pattern exposure is carried out by selectively irradiating the resist film with exposing light while supplying, onto the resist film, water that includes triphenylsulfonium nonaflate, that ... | 12/20/2011 |
| 8080365 | Thiopyran derivative, polymer, resist composition, and method for manufacturing semiconductor device using such resist composition To provide a thiopyran derivative, having a structure expressed by the following general formula 1: where X is O or S; R1 is —H, —CH3, C2-4 alkyl group, thioether group, or ketone group; R2 | 12/20/2011 |
| 8076055 | Passivation of multi-layer mirror for extreme ultraviolet lithography A reflector structure suitable for extreme ultraviolet lithography (EUVL) is provided. The structure comprises a substrate having a multi-layer reflector. A capping layer is formed over the multi-layer reflector to prevent oxidation. In an embodiment, the capping la... | 12/13/2011 |
| 8067146 | Method for forming a fine pattern in a semicondutor device A method for forming a fine pattern a semiconductor device includes the steps of forming a first photoresist pattern over a semiconductor substrate having an underlying layer; coating a pattern hardening coating agent over the first photoresist pattern, thereby form... | 11/29/2011 |
| 8053172 | Photoresists and methods for optical proximity correction Photolithography compositions and methods. A first layer of a first photoresist is formed on a substrate. A second layer of a second photoresist is formed directly onto the first layer. The second polymer of the second photoresist includes an absorbing moiety. The s... | 11/08/2011 |
| 8053171 | Substrate having film pattern and manufacturing method of the same, manufacturing method of semiconductor device, liquid crystal television, and EL television The invention provides a manufacturing method of a substrate having a film pattern including an insulating film, a semiconductor film, a conductive film and the like by simple steps, and also a manufacturing method of a semiconductor device which is low in cost with... | 11/08/2011 |
| 8053173 | Multi-functional linear siloxane compound, a siloxane polymer prepared from the compound, and a process for forming a dielectric film by using the polymer A novel multi-functional linear siloxane compound, a siloxane polymer prepared from the siloxane compound, and a process for forming a dielectric film by using the siloxane polymer. The linear siloxane polymer has enhanced mechanical properties (e.g., modulus), supe... | 11/08/2011 |
| 8048614 | Semiconductor integrated circuit device fabrication method A circuit pattern having a size finer than a half of a wavelength of an exposure beam is transferred on a semiconductor wafer plane with an excellent accuracy by means of a mask whereupon an integrated circuit pattern is formed and a reduction projection aligner. Th... | 11/01/2011 |
| 8043793 | Method for manufacturing electroluminescence element The present invention provides a method for manufacturing an electroluminescence element that has a light emitting layer containing a quantum dot and exhibits excellent life characteristics. In the method, patterning of the light emitting layer can be stably perform... | 10/25/2011 |
| 8039202 | Positive-working photoimageable bottom antireflective coating The present invention relates to a positive bottom photoimageable antireflective coating composition which is capable of being developed in an aqueous alkaline developer, wherein the antireflective coating composition comprises a polymer comprising at least one recu... | 10/18/2011 |
| 8034541 | Process for producing a non-transparent microvoided self-supporting film A process for producing a non-transparent microvoided self-supporting film comprising the steps of: i) mixing at least one linear polyester having together monomer units consisting essentially of terephthalate, isophthalate and aliphatic dimethylene with the molar r... | 10/11/2011 |
| 8034542 | Conductive film and manufacturing method thereof, and transparent electromagnetic shielding film An electromagnetic shielding film for plasma display which is excellent in electromagnetic shielding characteristics for effectively shielding electromagnetic waves, near infrared rays, stray light, external light, and the like and even when stored under a wet heat ... | 10/11/2011 |
| 8034543 | Angled-wedge chrome-face wall for intensity balance of alternating phase shift mask A method for forming a semiconductor device is presented. The method includes providing a substrate having a photoresist thereon and transmitting a light source through a mask having a pattern onto the photoresist. The mask comprises a mask substrate having first, s... | 10/11/2011 |
| 8017305 | Pattern forming method, semiconductor device manufacturing method and exposure mask set First, a first exposure process is performed using dipole illumination with only a grating-pattern forming region as a substantial object to be exposed. Next, a second exposure process is performed with only a standard-pattern forming region as a substantial object ... | 09/13/2011 |
| 8017306 | Method for producing conductive film A conductive film producing method includes a metallic silver forming step of exposing and developing a photosensitive material having a 95-μm-thick long support and thereon a silver salt-containing emulsion layer, thereby forming a metallic silver portion to prepa... | 09/13/2011 |
| 8012673 | Processing a copolymer to form a polymer memory cell Disclosed are organic semiconductor devices containing a copolymer layer that contains a polymer dielectric and a semiconducting polymer formed using actinic radiation. As initially formed, the copolymer layer has dielectric properties, but portions may selectively ... | 09/06/2011 |
| 8007985 | Semiconductor devices and methods of manufacturing thereof Semiconductor devices and methods of manufacturing thereof are disclosed. A plurality of features is formed on a workpiece, the plurality of features being located in a first region and a second region of the workpiece. Features in the first region have a first late... | 08/30/2011 |
| 8007986 | Immersion lithography fluids Suitable additives that may be added into immersion fluids, immersion fluids comprising at least one carrier medium selected from an aqueous fluid, a non-aqueous fluid, and mixtures thereof, and immersions fluids comprising at least one carrier medium and at least o... | 08/30/2011 |
| 8003300 | Methods for fabricating complex micro and nanoscale structures and electronic devices and components made by the same This invention provides processing steps, methods and materials strategies for making patterns of structures for electronic, optical and optoelectronic devices. Processing methods of the present invention are capable of making micro- and nano-scale electronic struct... | 08/23/2011 |
| 7993814 | Method for forming patterns using single mask A method for forming patterns using a single mask includes: disposing a photo mask having a defined pattern, and performing an exposure process by controlling the focal length of an exposure apparatus to a focusing position to form a pattern having the same shape as... | 08/09/2011 |
| 7993816 | Method for fabricating self-aligned nanostructure using self-assembly block copolymers, and structures fabricated therefrom In one embodiment, the present invention provides a method for patterning a surface that includes forming a block copolymer atop a heterogeneous reflectivity surface, wherein the block copolymer is segregated into first and second units; applying a radiation to the ... | 08/09/2011 |