Bizarre Patents
Method and apparatus for making a drink hop along a bar or counter
A method for generating a drink which appears to hop from a remote spot on the bar or counter and take one or more leaps, before landing in a patron's glass.
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| Number | Title | Issue Date |
| 7862902 | Multi-layered bearing The invention describes a multi-layered bearing with a supporting metal layer, optionally a bearing metal layer disposed on top of it, an anti-friction layer on top of the latter as well as a wearing layer on top of it. The wearing layer is made from bismuth or a bi... | 01/04/2011 |
| 7651784 | Sliding element The invention describes a sliding element, in particular a sliding bearing, with a support element and a sliding layer, between which a bearing metal layer is arranged, wherein the sliding layer is made from bismuth or a bismuth alloy, and wherein the crystallites o... | 01/26/2010 |
| 7629058 | Sliding member A sliding member has a coating layer deposited on a base material through an intermediate layer, wherein the intermediate layer is formed of a lead-free metal, and the coating layer is formed of Bi or a lead-free Bi alloy; and wherein a grain in the intermediate lay... | 12/08/2009 |
| 7442445 | Brazing clad material, and brazing method and brazing product using the same A brazing clad material is a composite material that comprises a base material and a brazing material layer formed integrally on the base material. The brazing material layer has a Ni or Ni alloy layer, a Ti or Ti alloy layer and a Fe—Ni alloy layer that are seque... | 10/28/2008 |
| 7368046 | Layered composite material for plain bearings, production and use thereof The invention is a method for the production of a composite multilayer material having a backing layer, a bearing metal layer of a copper alloy or an aluminum alloy, a nickel intermediate layer and an overlay consisting of about 0-20 wt. % copper and about 0-20 wt. ... | 05/06/2008 |
| 7368067 | P-type zinc oxide semiconductor film and process for preparation thereof A p-type ZnO semiconductor film comprised mainly of Zn and O elements is disclosed. The film is characterized as containing an alkali metal and nitrogen. Preferably, the alkali metal is contained such that its concentration is distributed to increase toward an end o... | 05/06/2008 |
| 7357853 | Electroplating composite substrates An electrolyte employed to selectively deposit a tin or tin alloy film on a composite substrate. A method for depositing the tin or tin alloy on the composite substrate also is described. ... | 04/15/2008 |
| 7323254 | Layered material The invention relates to an alloy consisting of at least three components A, B, C, which form at least a first matrix and a soft phase dispersed therein, with a first surface (5) and a second surface (9) lying opposite it, the proportions of components... | 01/29/2008 |
| 7322744 | Temperature measurement device A temperature measuring device includes a temperature-responsive element that mechanically moves a first inductive assembly component relative to a second inductive assembly component in response to temperature changes. The movement of the first inductive assembly c... | 01/29/2008 |
| 7282268 | Structure, method of manufacturing the same, and device using the same A composite structure is formed so as to contain aluminum and silicon or silicon/germanium. The composite structure comprises pillar-shaped members containing aluminum and a region containing silicon or silicon/germanium and surrounding the pillar-shaped members. Th... | 10/16/2007 |
| 7253017 | Molding technique for fabrication of optoelectronic devices Charge splitting networks for optoelectronic devices may be fabricated using a nanostructured porous film, e.g., of SiO2, as a template. The porous film may be fabricated using surfactant temptation techniques. Any of a variety of semiconducting materials... | 08/07/2007 |
| 7227196 | Group II-VI semiconductor devices Semiconductor devices containing group II-VI semiconductor materials are disclosed. The devices may include a p-n junction containing a p-type group II-VI semiconductor material and an n-type semiconductor material. The p-type group II-VI semiconductor includes a si... | 06/05/2007 |
| 7220319 | Electrostatic chucking stage and substrate processing apparatus This application discloses the structure of an ESC stage where a chucking electrode is sandwiched by a moderation layer and a covering layer. The moderation layer and the covering layer have the thermal expansion coefficients between the dielectric plate and the chu... | 05/22/2007 |
| 7214418 | Structure having holes and method for producing the same A structure having a hole, including a substrate, a first layer including an alumina hole, and a second layer disposed between the substrate and the fist layer, wherein the second layer contains silicon, and has a smaller hole than the alumina hole. ... | 05/08/2007 |
| 7175737 | Electrostatic chucking stage and substrate processing apparatus This application discloses the structure of an ESC stage where a chucking electrode is sandwiched by a moderation layer and a covering layer. The moderation layer and the covering layer have the thermal expansion coefficients between the dielectric plate and the chu... | 02/13/2007 |
| 7167342 | Magnetic recording medium, magnetic recording playback device, and information processing device A magnetic recording medium is provided while including a recording layer in which magnetic materials are in the shape of a circular cylinder and uniformity and size reduction are achieved simultaneously. The magnetic recording medium includes a recording layer and ... | 01/23/2007 |
| 7163613 | Method of manufacturing a semiconductor device by forming plating layers having differing thicknesses There is provided a semiconductor device comprising: a first plating layer formed on one surface of an interconnect pattern; a second plating layer formed within through holes in the interconnect pattern; a semiconductor chip electrically connected to the first plat... | 01/16/2007 |
| 7128981 | Sliding member Disclosed is a sliding member including an overlay layer made of a Bi based alloy comprising Cu as an essential element and at least one element selected from the group of Sn and In, wherein the Bi based alloy comprises 0.1 to 10 mass % of Cu and 0.5 to 10 mass % in... | 10/31/2006 |
| 7122899 | Semiconductor device and production process An ohmic resistance is present between two parts of a conductor layer so that the size of the ohmic resistance can be ascertained and/or a semiconductor region is present in or on a layer forming the dielectric. The conductor layer is structured into a gate contact,... | 10/17/2006 |
| 7115213 | Ferromagnetic ZnO-type compound including transition metallic element and method for adjusting ferromagnetic characteristics thereof The ZnO-type compound contains at least one metal selected from a group of transition elements consisting of V, Cr, Fe, Co, Ni, Rh and Ru. Ferromagnetic characteristics are adjusted by adjusting densities of these transition elements, by varying combinations of two ... | 10/03/2006 |
| 7098573 | Frequency-tunable resonator A frequency-tunable resonator comprises a basic element having at least one piezoelectric layer and at least one semiconducting layer. The electrodes, formed on main surface situated opposite one another of the basic element, are loaded with an external voltage, whe... | 08/29/2006 |
| 7076126 | Passivation of photonic integrated circuits (PICs) A photonic integrated circuit (PIC) comprises a plurality of integrated optically coupled components formed in a surface of the PIC and a passivating layer overlies at least a portion of the PIC surface. The overlying passivating layer comprises a material selected ... | 07/11/2006 |
| 7074480 | Porous body and method of manufacturing the same A nanostructure is a porous body comprising a plurality of pillar-shaped pores and a region surrounding them, said region being an oxide amorphous region formed so as to contain C, Si, Ge or a material of a combination of them. Such a nanostructure can be used as fu... | 07/11/2006 |
| 7075163 | Electromagnetic noise suppressor, semiconductor device using the same, and method of manufacturing the same In a semiconductor bare chip (57) on the front surface whereof is formed an integrated circuit, a magnetic loss film 55 is formed on the back surface of that semiconductor bare chip. ... | 07/11/2006 |
| 7070855 | Porous material and production process thereof There are provided a porous material and a process for producing the same. The porous material has a plurality of columnar pores and an area surrounding the pores, and the area is an amorphous area containing C, Si, Ge or a combination thereof. ... | 07/04/2006 |
| 7067200 | Joined bodies and a method of producing the same A joined body and method of producing the joined body are provided. A first member containing at least a ceramic and a second member containing at least one of a metal and a metal composite are joined with each other via a metal adhesive. The metal adhesive contains... | 06/27/2006 |
| 7063897 | Slide member A Bi base material of which a Miller index (202) face has the index of orientation of not less than 30% and in which the (202) face has the index of orientation assuming a maximum value as compared with those of other faces forms a minute structure and has a surface... | 06/20/2006 |
| 7033436 | Crystal growth method for nitride semiconductor and formation method for semiconductor device Methods of crystal growth for semiconductor materials, such as nitride semiconductors, and methods of manufacturing semiconductor devices are provided. The method of crystal growth includes forming a number of island crystal regions during a first crystal growth pha... | 04/25/2006 |
| 7033435 | Process for preparing p-n junctions having a p-type ZnO film A process for preparing p-n or n-p junctions having a p-type oxide film is disclosed. In one embodiment, a p-type zinc oxide film has a net acceptor concentration of at least about 1015 acceptors/cm3. ... | 04/25/2006 |
| 7022460 | Erasable optical recording material for blue lasers An optical recording material for binary, multibit or volume data storage is described. The optical recording material comprises: (a) at least one dyestuff selected from polymeric azo dyestuffs and oligomeric azo dyestuffs, the dyestuff changing its spatial arrangem... | 04/04/2006 |
| 7022182 | Ferromagnetic p-type single-crystal zinc oxide material and manufacturing method thereof The present invention provides a single-crystal ZnO thin film having a high ferromagnetic transition temperature. In one aspect of the present invention, the ZnO thin film comprises a ferromagnetic p-type single-crystal zinc oxide including a transition metal elemen... | 04/04/2006 |
| 7004635 | Lubricated ball bearings A lubricated ball bearing for use in ball bearing sets is disclosed. The lubricated ball bearing features a lubricating coating applied to its outer surface. The lubricating coating preferably comprises silver, and enables the ball bearing to be utilized in bearing ... | 02/28/2006 |
| 7001671 | Kinetic sprayed electrical contacts on conductive substrates The present invention is directed to electrical contacts that comprise spaced electrically conductive particles embedded and bonded into the surface of conductors in which the particles have been kinetically sprayed onto the conductors with sufficient energy to form... | 02/21/2006 |
| 6972146 | Structure having holes and method for producing the same A structure having a hole, including a substrate, a first layer including an alumina hole, and a second layer disposed between the substrate and the fist layer, wherein the second layer contains silicon, and has a smaller hole than the alumina hole. ... | 12/06/2005 |
| 6940721 | Thermal interface structure for placement between a microelectronic component package and heat sink A multi-layer thermal interface structure for placement between a microelectronic component package and a heat sink so that the structure has a total thermal resistance of no greater than about 0.03° C.-in2/W. The structure comprises a plurality of super... | 09/06/2005 |
| 6932892 | Apparatus and method for electrolytically depositing copper on a semiconductor workpiece A process for applying a metallization interconnect as to a semiconductor workpiece having a barrier layer deposited on a surface thereof is set forth. The process includes the forming of an ultra-thin metal seed layer on the barrier layer. The ultra-thin seed layer... | 08/23/2005 |
| 6924023 | Method of manufacturing a structure having pores A method of manufacturing a nonostructure, which enables cylindrical pores arrayed according to any periodic pattern to be easily made on a substrate over a large area at a low cost in a short period of time. The method of manufacturing a structure having such pores... | 08/02/2005 |
| 6919013 | Apparatus and method for electrolytically depositing copper on a workpiece A process for applying a metallization interconnect structure to a semiconductor workpiece having a barrier layer deposited on a surface thereof is set forth. The process includes the forming of an ultra-thin metal seed layer on the barrier layer. The ultra-thin see... | 07/19/2005 |
| 6908782 | High carrier concentration p-type transparent conducting oxide films A p-type transparent conducting oxide film is provided which is consisting essentially of, the transparent conducting oxide and a molecular doping source, the oxide and doping source grown under conditions sufficient to deliver the doping source intact onto the oxid... | 06/21/2005 |
| 6869689 | Joined structures of metal terminals and ceramic members, joined structures of metal members and ceramic members, and adhesive materials A joined structure of a metal terminal and a ceramic member has a joining layer between the terminal and the ceramic member. The joining layer has a metal adhesive layer containing at least indium metal. The invention further provides a joined structure of a metal m... | 03/22/2005 |
