Did You Know...
...that in 1800 ether was first used by partyers as a fun diversion? Sniffing the gas led to hilarious and raucous laughter as people watched each other become more and more intoxicated and silly. Several doctors independently realized the value ether would have to anesthetize surgery patients. Of those who claimed rights to the "discovery," none had a happy ending. One had a seizure and died defending his rights. Another spent his life in an asylum because he had been denied acclaim. A third became addicted to chloroform and, in a New York City jail, he soaked a cloth in the drug, severed an artery and bled to death.
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| Number | Title | Issue Date |
| 8182884 | Process for application of a hydrophilic coating to fuel cell bipolar plates A process comprising: depositing a coating on a fuel cell bipolar plate using plasma assisted chemical vapor deposition. ... | 05/22/2012 |
| 8105661 | Method for forming porous insulation film A method of forming a porous film on a processing target includes: forming fine organic particles by polymerizing an organic compound in a gaseous phase; mixing the fine organic particles with a silicon compound containing a Si—O bond in a gaseous phase, thereby d... | 01/31/2012 |
| 8043668 | Method for production of an ethylene/tetrafluorideethylene copolymer molded product Provided is a method for depositing a fluorine-doped silicon oxide film on the surface of a substrate made of a material comprising at least 50 mass % of an ethylene/tetrafluoroethylene copolymer. This method comprises flowing a mixed gas into between electrodes, ex... | 10/25/2011 |
| 7959987 | Fuel cell conditioning layer A method and apparatus for depositing a material layer to treat and condition a substrate, such as a fuel cell part, is described. The method includes depositing a hydrophilic material layer on a portion of the surface of the substrate in a process chamber from a mi... | 06/14/2011 |
| 7947338 | Method of forming an interlayer insulating film having a siloxane skeleton In a method of forming an interlayer insulating film by plasma CVD, an organic siloxane compound including one or more silicon atoms each having at least three or more units each represented by a general formula, —O—Si(R1R2)—OR3 | 05/24/2011 |
| 7887891 | Apparatus for plasma-enhanced chemical vapor deposition (PECVD) of an internal barrier layer inside a container, said apparatus including a gas line isolated by a solenoid valve A machine (1) for depositing a thin layer of a barrier-effect material inside a container (2) by plasma-enhanced chemical vapor deposition, said machine (1) comprising: a processing unit (4) receiving the container (2) and equipped... | 02/15/2011 |
| 7629033 | Plasma processing method for forming a silicon nitride film on a silicon oxide film A plasma processing method for forming a silicon nitride film on a silicon oxide film, the method including preparing a substrate on which the silicon oxide film is formed; generating plasma by supplying a nitrogen gas onto the silicon oxide film; and nitride-proces... | 12/08/2009 |
| 7595097 | Expanding thermal plasma deposition system A system to coat a substrate includes a deposition chamber maintained at sub-atmospheric pressure, one or more arrays containing two or more expanding thermal plasma sources associated with the deposition chamber, and at least one injector containing orifices for ea... | 09/29/2009 |
| 7560144 | Method of stabilizing film quality of low-dielectric constant film A method of forming a film having a low dielectric constant, comprises the steps of: placing a substrate between an upper electrode and a lower electrode inside a reaction chamber, introducing a silicon-containing hydrocarbon compound source gas, an additive gas, an... | 07/14/2009 |
| 7455892 | Method and apparatus for forming a coating A method for forming a coating on a substrate using an atmospheric pressure plasma discharge. The method comprises introducing an atomized liquid and/or solid coating-forming material into an atmospheric pressure plasma discharge and/or an ionized gas stream resulti... | 11/25/2008 |
| 7435454 | Plasma enhanced atomic layer deposition system and method A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the PEALD process, introducing a first process material within the process ch... | 10/14/2008 |
| 7429410 | Diffuser gravity support An apparatus and method for supporting a substantial center portion of a gas distribution plate is disclosed. At least one support member is capable of engaging and disengaging the diffuser with a mating connection without prohibiting flow of a gas or gasses through... | 09/30/2008 |
| 7422776 | Low temperature process to produce low-K dielectrics with low stress by plasma-enhanced chemical vapor deposition (PECVD) Low K dielectric films exhibiting low mechanical stress may be formed utilizing various techniques in accordance with the present invention. In one embodiment, carbon-containing silicon oxide films are formed by plasma-assisted chemical vapor deposition at low tempe... | 09/09/2008 |
| 7396570 | Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layers Chemical vapor deposition methods of forming titanium silicide including layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period o... | 07/08/2008 |
| 7390537 | Methods for producing low-k CDO films with low residual stress Methods of preparing a carbon doped oxide (CDO) layer with a low dielectric constant and low residual stress are provided. The methods involve, for instance, providing a substrate to a deposition chamber and exposing it to a chemical precursor having molecules with ... | 06/24/2008 |
| 7371427 | Reduction of hillocks prior to dielectric barrier deposition in Cu damascene Unwanted hillocks arising in copper layers due to formation of overlying barrier layers may be significantly reduced by optimizing various process parameters, alone or in combination. A first set of process parameters may be controlled to pre-condition the processin... | 05/13/2008 |
| 7371619 | Semiconductor device and method of manufacturing the same In order to obtain a thin-film transistor having high characteristics using a metal element for accelerating the crystallization of silicon, a nickel element is selectively added to the surface of an amorphous silicon film (103) in regions (101) and ( | 05/13/2008 |
| 7361302 | Oxidation and fatigue resistant metallic coating The present invention relates to a metallic coating to be deposited on gas turbine engine components. The metallic coating comprises up to 18 wt % cobalt, 3.0 to 18 wt % chromium, 5.0 to 15 wt % aluminum, 0.1 to 1.0 wt % yttrium, up to 0.6 wt % hafnium, up to 0.3 wt... | 04/22/2008 |
| 7361287 | Method for etching structures in an etching body by means of a plasma A method is proposed for etching structures into an etching body, in particular, recesses which are laterally precisely defined by an etching mask, into a silicon body, using a plasma. In the process, a high-frequency pulsed, low-frequency modulated high-frequency p... | 04/22/2008 |
| 7348041 | Antireflection film made of a CVD SiOfilm containing a fluoro and/or alkyl modifier A low refractive index SiO2 film is provided which uses a starting material for forming an SiO2 film and has a lower refractive index than the conventional SiO2 film. A starting material gas comprising a gas containing a fluorine ato... | 03/25/2008 |
| 7344996 | Helium-based etch process in deposition-etch-deposition gap fill Plasma etch processes incorporating helium-based etch chemistries can remove dielectric a semiconductor applications. In particular, high density plasma chemical vapor etch-enhanced (deposition-etch-deposition) gap fill processes incorporating etch chemistries which... | 03/18/2008 |
| 7338845 | Fabrication method of a low-temperature polysilicon thin film transistor An LTPS-TFT structure comprises a gate, a gate dielectric layer, a patterned silicon layer, a patterned insulating layer, an ohmic contact layer and a source/drain layer. The gate and the gate dielectric layer are disposed on the substrate. The patterned silicon lay... | 03/04/2008 |
| 7316785 | Methods and apparatus for the optimization of etch resistance in a plasma processing system In a plasma processing system, including a plasma processing chamber, a method of optimizing the etch resistance of a substrate material is described. The method includes flowing pre-coat gas mixture into the plasma processing chamber, wherein the pre-coat gas mixtu... | 01/08/2008 |
| 7297376 | Method to reduce gas-phase reactions in a PECVD process with silicon and organic precursors to deposit defect-free initial layers A method for depositing a low dielectric constant film is provided by positioning a substrate within a processing chamber having a powered electrode, and flowing into the processing chamber an initiation gas mixture of a flow rate of one or more organosilicon compou... | 11/20/2007 |
| 7291360 | Chemical vapor deposition plasma process using plural ion shower grids A chemical vapor deposition process is carried out in a reactor chamber having a set of plural parallel ion shower grids that divide the chamber into an upper ion generation region and a lower process region, each of the ion shower grids having plural orifices in mu... | 11/06/2007 |
| 7288284 | Post-cleaning chamber seasoning method A method for seasoning a process chamber is disclosed. The seasoning method includes providing a seasoning film on the interior surfaces of a process chamber, typically after cleaning of the chamber. ... | 10/30/2007 |
| 7264850 | Process for treating a substrate with a plasma A process for depositing a diamond-like carbon film, which comprises providing a means for generating a sheet-like beam-type plasma region inside a vacuum vessel for depositing the diamond-like carbon film, and depositing the film on a substrate being moved through ... | 09/04/2007 |
| 7264849 | Roll-vortex plasma chemical vapor deposition method A chemical vapor deposition method includes a step of maintaining a hydrogen plasma at low pressure in a processing chamber. The processing chamber has a long, wide, thin geometry to favor deposition of thin-film silicon on sheet substrates over the chamber walls. T... | 09/04/2007 |
| 7244474 | Chemical vapor deposition plasma process using an ion shower grid A chemical vapor deposition process is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural orifices oriented in a non-parallel direction r... | 07/17/2007 |
| 7238393 | Method of forming silicon carbide films A method for depositing a silicon carbide layer onto a substrate comprises providing a silicon and carbon source gas and an inert gas into a reaction zone. The reaction zone contains the substrate. The method further comprises producing an electric field in the reac... | 07/03/2007 |
| 7238613 | Diffusion-enhanced crystallization of amorphous materials to improve surface roughness Methods of forming a roughened surface through diffusion-enhanced crystallization of an amorphous material are disclosed. In one aspect, conductive hemispherical grain silicon can be formed through dopant diffusion-enhanced crystallization of one or more layers of a... | 07/03/2007 |
| 7233042 | Method of forming inside rough and outside smooth HSG electrodes and capacitor structure A container capacitor and method of forming the container capacitor are provided. The container capacitor comprises a lower electrode fabricated by forming a layer of doped polysilicon within a container in an insulative layer disposed on a substrate; forming a barr... | 06/19/2007 |
| 7229935 | Method of forming a thin film by plasma CVD of a silicon-containing source gas A method for forming a thin film includes: supplying an additive gas, a dilution gas, and a silicon-containing source gas into a reaction chamber wherein a substrate is placed; forming a thin film on the substrate by plasma CVD under a given pressure with a given in... | 06/12/2007 |
| 7226875 | Method for enhancing FSG film stability A method for enhancing stability of a fluorinated silicon glass layer is disclosed. A fluorinated silicon glass layer provided on a substrate is subjected to a phosphorous-containing and hydrogen-containing gas such as phosphine (PH3), for example. The ga... | 06/05/2007 |
| 7223446 | Plasma CVD apparatus and dry cleaning method of the same In a parallel flat plate type plasma CVD apparatus, plasma damage of constituent parts in a reaction chamber due to irregularity of dry cleaning in the reaction chamber is reduced and the cost is lowered. In the parallel flat plate type plasma CVD apparatus in which... | 05/29/2007 |
| 7220670 | Method of producing rough polysilicon by the use of pulsed plasma chemical vapor deposition and products produced by same A method for depositing a rough polysilicon film on a substrate is disclosed. The method includes introducing the reactant gases argon and silane into a deposition chamber and enabling and disabling a plasma at various times during the deposition process. ... | 05/22/2007 |
| 7208394 | Method of manufacturing a semiconductor device with a fluorine concentration At present, a forming process of a base film through an amorphous silicon film is conducted in respective film forming chambers in order to obtain satisfactory films. When continuous formation of the base film through the amorphous silicon film is performed in a sin... | 04/24/2007 |
| 7192627 | Amorphous silicon deposition for sequential lateral solidification An amorphous silicon deposition method includes the step of forming a buffer layer on a transparent substrate; depositing amorphous silicon on the buffer layer by a thickness ranging from 600 to 2,000 angstroms; repeatedly irradiating the amorphous silicon layer to ... | 03/20/2007 |
| 7182879 | Plasma processing method A plasma processing method, in which a process gas is introduced into an evacuated process chamber for subjecting the target object to a plasma processing. The plasma processing method is featured in that at least a part of the process gas exhausted from the process... | 02/27/2007 |
| 7166335 | Layer formation method, and substrate with a layer formed by the method A layer formation method is disclosed which comprises supplying gas to a discharge space, exciting the supplied gas at atmospheric pressure or at approximately atmospheric pressure by applying a high frequency electric field across the discharge space, and exposing ... | 01/23/2007 |
