...Chester Carlson was a patent agent who tired of having to make multiple copies of patent applications using the only duplication method available at the time: carbon paper. In 1959 he came up with a new copying system and took it to IBM for evaluation. The "experts" at IBM determined potential sales to be only 5,000 units because people wouldn't want to use a bulky machine when they had carbon paper. Carlson's invention was the xerography process, the company founded on the system is Xerox.
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| Number | Title | Issue Date |
| 8101245 | Plasma deposition of amorphous semiconductors at microwave frequencies Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a ... | 01/24/2012 |
| 7981485 | Apparatus and method for performing a PCVD process The present invention relates to an apparatus for carrying out a PCVD process in which one or more doped or undoped glass layers are coated onto the interior of a glass substrate tube. The apparatus comprises an applicator having an inner wall and an outer wall and ... | 07/19/2011 |
| 7875322 | Plasma processing method Pulsated microwaves are supplied to a wave guide tube from a microwave generation unit through a matching circuit. The microwaves are supplied through an inner conductor to a planar antenna member. The microwaves are radiated from the planar antenna member through a... | 01/25/2011 |
| 7807234 | Plasma processing method, plasma processing apparatus, and computer recording medium According to the present invention, plasma oxidation processing and plasma nitridation processing are applied at the same time to the surface of a semiconductor substrate by plasma using a microwave. After forming an insulating film by the plasma oxynitridation proc... | 10/05/2010 |
| 7776408 | Method and apparatus for producing single crystalline diamonds A method and an apparatus for producing one or more single crystalline diamonds. One or more diamond seeds are placed in a substrate holder in a chemical vapor deposition (CVD) chamber. One or more metal discs are then positioned in the chemical vapor deposition cha... | 08/17/2010 |
| 7435454 | Plasma enhanced atomic layer deposition system and method A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the PEALD process, introducing a first process material within the process ch... | 10/14/2008 |
| 7404991 | Device and control method for micro wave plasma processing A microwave is introduced into a process chamber through a waveguide (26) of the plasma process apparatus, thereby generating plasma. A reflection monitor (40) and an electric power monitor (42) monitor the electric power of a reflected wave ref... | 07/29/2008 |
| 7399500 | Rapid process for the production of multilayer barrier layers A process for applying alternating layers by chemical vapor deposition comprises the process steps of depositing an adhesion-promoter layer on a substrate and applying a barrier layer. Alternating layers comprising organic and inorganic materials are deposited alter... | 07/15/2008 |
| 7368381 | Methods of forming materials The invention includes methods of forming films over substrates. A substrate is provided within a reaction chamber, and a mixture is also provided within the chamber. The mixture includes a precursor of a desired material within a supercritical fluid. The precursor ... | 05/06/2008 |
| 7367119 | Method for forming a reinforced tip for a probe storage device Systems and methods in accordance with the present invention can include a tip contactable with a media. In an embodiment, the tip comprises a substantially hollow structure formed of a metal. The tip can be formed by depositing a first metal layer over silicon ther... | 05/06/2008 |
| 7361387 | Plasma enhanced pulsed layer deposition A process system and a deposition method for depositing a highly controlled layered film on a workpiece is disclosed. The basic component of the apparatus is a pulsing plasma source that is capable of either exciting or not-exciting a first precursor. The pulsing pl... | 04/22/2008 |
| 7356969 | Electronically shaded thin film transparent monochromatic liquid crystal display laminated window shading system An electronically shaded glass window system is described that provides a progressively darkening window, based on either user input or detection of ambient light. This invention is appropriate for use in commercial buildings, residential buildings, public areas and... | 04/15/2008 |
| 7342716 | Multiple cavity low-emissivity coatings Multiple cavity low-emissivity coatings. The coating includes three infrared-reflection film regions, which may each include silver. ... | 03/11/2008 |
| 7339728 | Low-emissivity coatings having high visible transmission and low solar heat gain coefficient Low-emissivity coatings that are highly reflective to infrared radiation. The coating includes three infrared-reflection film regions, which may each include silver. ... | 03/04/2008 |
| 7336524 | Atomic probes and media for high density data storage A device in accordance with embodiments of the present invention comprises a contact probe for high density data storage reading, writing, erasing, or rewriting. In one embodiment, the contact probe can include a silicon core having a conductive coating. Contact pro... | 02/26/2008 |
| 7323400 | Plasma processing, deposition and ALD methods A plasma processing method includes providing a substrate in a processing chamber, the substrate having a surface, and generating a plasma in the processing chamber. The plasma provides at least two regions that exhibit different plasma densities. The method include... | 01/29/2008 |
| 7323230 | Coating for aluminum component A coated aluminum component for a substrate processing chamber comprises an aluminum component having a surface; a first aluminum oxide layer formed on the surface of the aluminum component, the aluminum oxide layer having a surface comprising penetrating surface fe... | 01/29/2008 |
| 7309630 | Method for forming patterned media for a high density data storage device Systems in accordance with the present invention can include a tip contactable with a media, the media including a substrate and a plurality of cells disposed over the substrate, one or more of the cells being electrically isolated from the other of the cells by a m... | 12/18/2007 |
| 7304263 | Systems and methods utilizing an aperture with a reactive atom plasma torch The footprint of a reactive atom plasma processing tool can be modified using an aperture device. A flow of reactive gas can be injected into the center of an annular plasma. An aperture can be positioned relative to the plasma such that the effective footprint of t... | 12/04/2007 |
| 7303790 | Electron cyclotron resonance plasma deposition process and device for single-wall carbon nanotubes and nanotubes thus obtained Electron cyclotron resonance plasma deposition process and device for single-wall carbon nanotubes (SWNTs) on a catalyst-free substrate, by injection of microwave power into a deposition chamber comprising a magnetic confinement structure with a magnetic mirror, and... | 12/04/2007 |
| 7303789 | Methods for producing thin films on substrates by plasma CVD Methods are provided to form a thin film reproducibly in a process for forming the thin film on the inner wall surface facing a space formed in a substrate by plasma CVD. A thin film is produced on an inner wall surface of a substrate facing a space formed in the su... | 12/04/2007 |
| 7301887 | Methods for erasing bit cells in a high density data storage device Methods in accordance with the present invention can be applied, in an embodiment, to a media comprising a phase change material to alter a resolved portion of the phase change material to have a resistance different from a resistance of the bulk material. A tip hav... | 11/27/2007 |
| 7301190 | Structures and methods to enhance copper metallization Disclosed structures and methods inhibit atomic migration and related capacitive-resistive effects between a metallization layer and an insulator layer in a semiconductor structure. One exemplary structure includes an inhibiting layer between an insulator and a meta... | 11/27/2007 |
| 7294404 | Graded photocatalytic coatings The invention provides graded photocatalytic coatings. In one aspect, the invention provides a substrate carrying a photocatalytic coating that includes a first graded film region and a second graded film region. The first graded film region has a substantially cont... | 11/13/2007 |
| 7285506 | Lamp reflector substrate, glass, glass-ceramic materials and process for making the same The present invention relates to glass, glass-ceramic materials, lamp reflectors and processes for making them. The glass material has a composition, by weight of the total composition, comprising 56-67% SiO2; 9-22% Al2O3; 3.4-3.8% L... | 10/23/2007 |
| 7285196 | Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals In recent years, copper wiring has emerged as a promising substitute for the aluminum wiring in integrated circuits, because copper offers lower electrical resistance and better reliability at smaller dimensions than aluminum. However, use of copper typically requir... | 10/23/2007 |
| 7276266 | Functionalization of carbon nanotubes Method and system for functionalizing a collection of carbon nanotubes (CNTs). A selected precursor gas (e.g., H2 or F2 or CnHm) is irradiated to provide a cold plasma of selected target particles, such as atomic H or F, i... | 10/02/2007 |
| 7276184 | Surfactant assisted nanomaterial generation process A process for the preparation of nanoscale particulate material is described comprising: (i) combining one or more functional material to be precipitated as nanoscale particles and one or more surface active material in a compressed CO2 phase with a densi... | 10/02/2007 |
| 7262505 | Selective electroless-plated copper metallization Structures and methods are provided which include a selective electroless copper metallization. The present invention includes a novel methodology for forming copper vias on a substrate, including depositing a thin film seed layer of Palladium (Pd) or Copper (Cu) on... | 08/28/2007 |
| 7262130 | Methods for making integrated-circuit wiring from copper, silver, gold, and other metals Integrated circuits, the key components in thousands of electronic and computer products, include interconnected networks of electrical components. The components are typically wired, or interconnected, together with aluminum wires. In recent years, researchers have... | 08/28/2007 |
| 7260500 | Method and apparatus for monitoring and verifying equipment status An equipment status monitoring system having at least one multi-modal resonator included as a part of a semiconductor processing system and a power source coupled to the at least one multi-modal resonator. The power source is configured to produce a microwave excita... | 08/21/2007 |
| 7253521 | Methods for making integrated-circuit wiring from copper, silver, gold, and other metals Integrated circuits include networks of electrical components that are typically wired, or interconnected, together with aluminum wires. In recent years, researchers have begun using copper in combination with diffusion barriers, rather than aluminum, to form the wi... | 08/07/2007 |
| 7244475 | Plasma treatment apparatus and control method thereof A frequency control circuit (45) controls an oscillation frequency of a second high frequency power source 51 based on a phase difference between a voltage component and a current component measured by a phase difference sensor (41) and an input... | 07/17/2007 |
| 7244474 | Chemical vapor deposition plasma process using an ion shower grid A chemical vapor deposition process is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural orifices oriented in a non-parallel direction r... | 07/17/2007 |
| 7229485 | Plasma reduction processing of materials In a process for the reduction of a metalliferous ore or concentrate the ore or concentrate is first prepared into a particulate form. A reaction chamber (3, 103, 203, 301, 401, 503, 603, 702) is then charged with ore or concentrate, a reductant and an input ... | 06/12/2007 |
| 7226510 | Film forming apparatus In a film forming apparatus according to the aerosol deposition method, the thickness of a structure being formed can be controlled accurately. The film forming apparatus includes an aerosol generating part in which raw material powder is to be provided, a compresse... | 06/05/2007 |
| 7223445 | Process for the deposition of uniform layer of particulate material A process for the deposition of particulate material of a desired substance on a surface includes: (i) charging a particle formation vessel with a compressed fluid; (ii) introducing into the particle formation vessel a first feed stream comprising a solvent and the ... | 05/29/2007 |
| 7220318 | Semiconductor device manufacturing apparatus and semiconductor device manufacturing method A semiconductor device manufacturing apparatus which uses a thermal CVD reaction to deposit a film onto a substrate has a ring with an electrode terminal that makes contact with either the substrate or the deposited film thereon, a power supply that applies a curren... | 05/22/2007 |
| 7220665 | H plasma treatment Electronic devices are constructed by a method that includes forming a first conductive layer in an opening in a multilayer dielectric structure supported by a substrate, forming a core conductive layer on the first conductive layer, subjecting the core conductive l... | 05/22/2007 |
| 7217398 | Deposition reactor with precursor recycle A reactor vessel is provided with a solvent in a supercritical PVT state for use in depositing films on a deposition substrate. A metal organic precursor is dissolved in the supercritical solvent, as is a reaction agent. A chemical reaction deposits a film, such as ... | 05/15/2007 |