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| Number | Title | Issue Date |
| 8003174 | Method for forming dielectric film using siloxane-silazane mixture A method of forming a dielectric film, includes: introducing a siloxane gas essentially constituted by Si, O, C, and H and a silazane gas essentially constituted by Si, N, H, and optionally C into a reaction chamber where a substrate is placed; depositing a siloxane... | 08/23/2011 |
| 7399388 | Sequential gas flow oxide deposition technique A method of depositing a silica glass insulating film over a substrate. In one embodiment the method comprises exposing the substrate to a silicon-containing reactant introduced into a chamber in which the substrate is disposed such that one or more layers of the si... | 07/15/2008 |
| 7396570 | Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layers Chemical vapor deposition methods of forming titanium silicide including layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period o... | 07/08/2008 |
| 7381451 | Strain engineering—HDP thin film with tensile stress for FEOL and other applications High density plasma (HDP) techniques form high tensile stress silicon oxide films. The HDP techniques use low enough temperatures to deposit high tensile stress silicon oxide films in transistor architectures and fabrication processes effective for generating channe... | 06/03/2008 |
| 7348041 | Antireflection film made of a CVD SiOfilm containing a fluoro and/or alkyl modifier A low refractive index SiO2 film is provided which uses a starting material for forming an SiO2 film and has a lower refractive index than the conventional SiO2 film. A starting material gas comprising a gas containing a fluorine ato... | 03/25/2008 |
| 7326438 | Method for depositing nitride film using chemical vapor deposition apparatus of single chamber type The present invention relates to a method for depositing a nitride film using a chemical vapor deposition apparatus of single chamber type, and more particularly to a method for depositing a nitride film that is capable of depositing the nitride film in which an are... | 02/05/2008 |
| 7302982 | Label applicator and system A label applicator including a support surface having a central area and curving downwardly from the central area. A post assembly extends up from the central area such that a label having a label through-hole can be positioned in a support position generally on the... | 12/04/2007 |
| 7288293 | Process for plasma surface treatment and device for realizing the process A process for plasma treatment of an object's surface to be treated comprising the creation of a plasma, the application of the plasma to the surface to be treated, and the excitation of the surface to be treated, such that it vibrates and undulates. The energy for ... | 10/30/2007 |
| 7282132 | Zinc oxide film treatment method and method of manufacturing photovoltaic device utilizing the same A film of zinc oxide electrochemically deposited from an aqueous solution is subjected to heat treatment at a temperature equal to or higher than 150° C. and equal to or lower than 400° C. in a nitrogen or inert gas atmosphere that contains oxygen, thereby obtaini... | 10/16/2007 |
| 7259050 | Semiconductor device and method of making the same A semiconductor device comprises a substrate, a gate disposed on the substrate, and a source and drain formed in the substrate on both sides of the gate. The device further comprises a thin spacer having a first layer and a second layer formed on the sidewalls of th... | 08/21/2007 |
| 7244474 | Chemical vapor deposition plasma process using an ion shower grid A chemical vapor deposition process is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural orifices oriented in a non-parallel direction r... | 07/17/2007 |
| 7242012 | Lithography device for semiconductor circuit pattern generator General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor ... | 07/10/2007 |
| 7238393 | Method of forming silicon carbide films A method for depositing a silicon carbide layer onto a substrate comprises providing a silicon and carbon source gas and an inert gas into a reaction zone. The reaction zone contains the substrate. The method further comprises producing an electric field in the reac... | 07/03/2007 |
| 7238616 | Photo-assisted method for semiconductor fabrication The present invention provides a processing system comprising a remote plasma activation region for formation of active gas species, a transparent transfer tube coupled between the remote activation region and a semiconductor processing chamber, and a source of phot... | 07/03/2007 |
| 7223696 | Methods for maskless lithography General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor ... | 05/29/2007 |
| 7220810 | Polymer film and method for producing the same A polymer film having a low dielectric constant is produced polymerizing a raw material gas containing a compound of the formula (1): wherein PCA represents a polycycloaliphatic hydrocarbon group, ALK represents ... | 05/22/2007 |
| 7214600 | Method to improve transmittance of an encapsulating film A method for depositing a carbon-containing material layer onto a substrate includes delivering a mixture of precursors for the carbon-containing material layer into a process chamber, doping the carbon-containing material layer with silicon, and depositing the carb... | 05/08/2007 |
| 7205224 | Very low dielectric constant plasma-enhanced CVD films The present invention provides a method for depositing nano-porous low dielectric constant films by reacting an oxidizable silicon containing compound or mixture comprising an oxidizable silicon component and an oxidizable non-silicon component having thermally liab... | 04/17/2007 |
| 7193239 | Three dimensional structure integrated circuit A Three-Dimensional Structure (3DS) Memory allows for physical separation of the memory circuits and the control logic circuit onto different layers such that each layer may be separately optimized. One control logic circuit suffices for several memory circuits, red... | 03/20/2007 |
| 7183715 | Method for operating a semiconductor processing apparatus A method for operating a semiconductor processing apparatus that plasma-processes a semiconductor wafer mounted on a stage placed in a container using a plasma generated therein. The method includes setting a temperature of the semiconductor wafer, and controlling a... | 02/27/2007 |
| 7182122 | Heating and cooling apparatus, and vacuum processing apparatus equipped with this apparatus A heating and cooling apparatus with which batch processing is possible and throughput can be increased, and furthermore which is more compact and uses less energy. A substrate heating chamber and a substrate cooling chamber each capable of simultaneously holding a ... | 02/27/2007 |
| 7176545 | Apparatus and methods for maskless pattern generation General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor ... | 02/13/2007 |
| 7176549 | Shallow trench isolation using low dielectric constant insulator A shallow trench isolation is disclosed wherein the trench depth is reduced beyond that achieved in prior art processes. The reduced trench depth helps to eliminate the formation of voids during the trench refill process and provides for greater planarity in the fin... | 02/13/2007 |
| 7138158 | Forming a dielectric layer using a hydrocarbon-containing precursor In one embodiment, the present invention includes introducing a precursor containing hydrocarbon substituents and optionally a second conventional or hydrocarbon-containing precursor into a vapor deposition apparatus; and forming a dielectric layer having the hydroc... | 11/21/2006 |
| 7138295 | Method of information processing using three dimensional integrated circuits A Three-Dimensional Structure (3DS) Memory allows for physical separation of the memory circuits and the control logic circuit onto different layers such that each layer may be separately optimized. One control logic circuit suffices for several memory circuits, red... | 11/21/2006 |
| 7125758 | Controlling the properties and uniformity of a silicon nitride film by controlling the film forming precursors We have developed a method of PECVD depositing a-SiNx:H films which are useful in a TFT device as gate dielectric and passivation layers, when a series of TFT devices are arrayed over a substrate having a surface area larger than about 1 m2, wh... | 10/24/2006 |
| 7115489 | Methods of growing epitaxial silicon Methods for growing epitaxial silicon are provided. Methods for controlling bottom stacking fault propagation in epitaxial silicon are also provided. ... | 10/03/2006 |
| 7115533 | Semiconductor device manufacturing method The present invention provides a method of depositing a metal film on a substrate in a non-oxidizing atmosphere and then forming a metal oxide film by oxidizing the metal film in an oxidizing atmosphere. ... | 10/03/2006 |
| 7112453 | Retentate chromatography and protein chip arrays with applications in biology and medicine This invention provides methods of retentate chromatography for resolving analytes in a sample. The methods involve adsorbing the analytes to a substrate under a plurality of different selectivity conditions, and detecting the analytes retained on the substrate by d... | 09/26/2006 |
| 7105460 | Nitrogen-free dielectric anti-reflective coating and hardmask Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-... | 09/12/2006 |
| 7092607 | Optical waveguide device, and method of manufacturing optical waveguide device The present invention provides a glass optical waveguide device that comprises silica glass and is usable despite a relatively large refractive index difference between its core layer and cladding layer, and a method of manufacturing such device. This optical wavegu... | 08/15/2006 |
| 7074641 | Method of forming silicon-based thin film, silicon-based thin film, and photovoltaic element A method of forming a silicon-based thin film according to the present invention comprises introducing a source gas containing silicon fluoride and hydrogen into a vacuum vessel, and using a high frequency plasma CVD method to form a silicon-based thin film on a sub... | 07/11/2006 |
| 7074489 | Low dielectric constant material and method of processing by CVD Organofluorosilicate glass films contain both organic species and inorganic fluorines, exclusive of significant amounts of fluorocarbon species. Preferred films are represented by the formula SivOwCxHyFz, where ... | 07/11/2006 |
| 7070657 | Method and apparatus for depositing antireflective coating This invention provides a stable process for depositing an antireflective layer. Helium gas is used to lower the deposition rate of plasma-enhanced silane oxide, silane oxynitride, and silane nitride processes. Helium is also used to stabilize the process, so that d... | 07/04/2006 |
| 7068870 | Variable width waveguide for mode-matching and method for making A variable width waveguide useful for mode matching between dissimilar optical waveguides and optical fibers and a method for making the same is described. In one embodiment, a tapered waveguide is etched in a substrate, a cladding material is laid over the upper su... | 06/27/2006 |
| 7067414 | Low k interlevel dielectric layer fabrication methods A low k inter-level dielectric layer fabrication method includes providing a substrate having integrated circuitry at least partially formed thereon. An oxide-comprising inter-level dielectric layer including carbon and having a dielectric constant no greater than 3... | 06/27/2006 |
| 7060514 | Process for fabricating films of uniform properties on semiconductor devices A process for forming a thin layer exhibiting a substantially uniform property on an active surface of a semiconductor substrate includes varying the temperature within a reaction chamber while a layer of a material is formed upon the semiconductor substrate. Varyin... | 06/13/2006 |
| 7059335 | Process for treating moulds or mould halves for the production of ophthalmic lenses In a process for treating moulds or mould halves (3) for the production of ophthalmic lenses, in particular contact lenses, the moulds or mould halves (3) are exposed to a plasma at least in the area of their shaping surfaces (310). ... | 06/13/2006 |
| 7052552 | Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD A method and apparatus are disclosed for depositing a dielectric film in a gap having an aspect ratio at least as large as 6:1. By cycling the gas chemistry of a high-density-plasma chemical-vapor-deposition system between deposition and etching conditions, the gap ... | 05/30/2006 |
| 7049590 | Capping layer to impede atom ejection A method of reducing atom ejection from a sample during electron beam bombardment. An electron beam is directed through a low pressure environment toward a surface of the sample. The electron beam thereby impinges on the sample at a target location, and thereby caus... | 05/23/2006 |
