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| Number | Title | Issue Date |
| 7371695 | Use of TEOS oxides in integrated circuit fabrication processes A method for manufacturing a low temperature removable silicon dioxide hard mask for patterning and etching is provided, wherein tetra-ethyl-ortho-silane (TEOS) is used to deposit a silicon dioxide hard mask. ... | 05/13/2008 |
| 7361387 | Plasma enhanced pulsed layer deposition A process system and a deposition method for depositing a highly controlled layered film on a workpiece is disclosed. The basic component of the apparatus is a pulsing plasma source that is capable of either exciting or not-exciting a first precursor. The pulsing pl... | 04/22/2008 |
| 7348042 | Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) The present invention relates to an enhanced sequential atomic layer deposition (ALD) technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conduct... | 03/25/2008 |
| 7332061 | Integration of multiple frequency band FBAR filters A method and system for forming FBAR filters for different frequency bands with film stacks of different thicknesses, where at least some layers of different thicknesses are formed substantially at the same time, during a process operation are described herein. ... | 02/19/2008 |
| 7323581 | Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition A metalorganic complex composition comprising a metalorganic complex selected from the group consisting of: metalorganic complexes comprising one or more metal central atoms coordinated to one or more monodentate or multidentate organic ligands, and complexed with o... | 01/29/2008 |
| 7323812 | Process for producing diamond electron emission element and electron emission element A method for production includes a step for forming concave molds on a surface of a substrate and a step for growing a diamond heteroepitaxially on the substrate in an atmosphere containing a doping material. The crystal structure of the slope of the concave molds o... | 01/29/2008 |
| 7303790 | Electron cyclotron resonance plasma deposition process and device for single-wall carbon nanotubes and nanotubes thus obtained Electron cyclotron resonance plasma deposition process and device for single-wall carbon nanotubes (SWNTs) on a catalyst-free substrate, by injection of microwave power into a deposition chamber comprising a magnetic confinement structure with a magnetic mirror, and... | 12/04/2007 |
| 7300684 | Method and system for coating internal surfaces of prefabricated process piping in the field The coating of internal surfaces of a workpiece is achieved by connecting a bias voltage such that the workpiece functions as a cathode and by connecting an anode at each opening of the workpiece. A source gas is introduced at an entrance opening, while a vacuum sou... | 11/27/2007 |
| 7270713 | Tunable gas distribution plate assembly A gas distribution plate assembly and a method for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution plate assembly includes a tuning plate coupled to a diffuser plate. The tuning plate has a plurality of orifice holes form... | 09/18/2007 |
| 7238393 | Method of forming silicon carbide films A method for depositing a silicon carbide layer onto a substrate comprises providing a silicon and carbon source gas and an inert gas into a reaction zone. The reaction zone contains the substrate. The method further comprises producing an electric field in the reac... | 07/03/2007 |
| 7229545 | Process for the coating for metallic implant materials A biomimetically produced bone-analogous coating, comprising organic and inorganic main constituents, is suitable for coating metallic implant materials of any desired surfaces. The coating comprises a collagen matrix mineralized with calcium phosphate. ... | 06/12/2007 |
| 7227313 | Organic electroluminescent device The invention provides a tool to select reliable organic LED devices, where the risk for failure before the end of its lifetime is low. This tool comprises the steps of: i) subjecting the device to a high electric field over the electroluminescent layer... | 06/05/2007 |
| 7226640 | Method of fabricating iridium-based materials and structures on substrates A method of forming an iridium-containing film on a substrate, from an iridium-containing precursor thereof which is decomposable to deposit iridium on the substrate, by decomposing the precursor and depositing iridium on the substrate in an oxidizing ambient enviro... | 06/05/2007 |
| 7218802 | Low drift planar waveguide grating sensor and method for manufacturing same A planar waveguide grating (PWG) sensor is described herein which exhibits a low signal drift and an enhanced sensitivity due to the use of a fully dense silicon-rich nitride surface layer. In the preferred embodiment, the silicon rich silicon nitride surface layer ... | 05/15/2007 |
| 7211144 | Pulsed nucleation deposition of tungsten layers A method of forming a tungsten nucleation layer using a sequential deposition process. The tungsten nucleation layer is formed by reacting pulses of a tungsten-containing precursor and a reducing gas in a process chamber to deposit tungsten on the substrate. Thereaf... | 05/01/2007 |
| 7208197 | Method of depositing copper on a support A process for the deposition of copper on a support. The process includes bringing a copper precursor, in the vapor phase, into contact with a heated support, optionally in the presence of hydrogen. The copper precursor is in the form of a CuCl or CuBr composition i... | 04/24/2007 |
| 7206490 | Electro-optic polymer waveguide devices incorporating organically modified sol-gel clads Electro-optic waveguide devices that comprise an electro-optic polymer core and a polymer buffer clad. The polymer buffer clad comprises an organically modified sol-gel and has a refractive index lower than the refractive index of the core. ... | 04/17/2007 |
| 7201803 | Valve control system for atomic layer deposition chamber A valve control system for a semiconductor processing chamber includes a system control computer and a plurality of electrically controlled valves associated with the processing chamber. The system further includes a programmable logic controller in communication wi... | 04/10/2007 |
| 7182979 | High efficiency method for performing a chemical vapordeposition utilizing a nonvolatile precursor A method directed to the use of a nonvolatile precursor, either a solid or liquid precursor, suitable for CVD, including liquid source CVD (LSCVD). Using the method of the invention the nonvolatile precursor is dissolved in a solvent. Choice of solvent is typically ... | 02/27/2007 |
| 7172969 | Method and system for etching a film stack A method and system is described for preparing a film stack, and forming a feature in the film stack using a plurality of dry etching processes. The feature formed in the film stack can include a gate structure having a critical dimension of approximately 25 nm or l... | 02/06/2007 |
| 7170184 | Treatment of a ground semiconductor die to improve adhesive bonding to a substrate Methods are provided to improve the adhesive bonding of a semiconductor die to a substrate through an adhesive paste by forming a layer of silicon dioxide on the back surface of the semiconductor die prior to applying the adhesive paste. Contacting the semiconductor... | 01/30/2007 |
| 7167386 | Ferroelectric memory and operating method therefor A ferroelectric memory capable of improving disturbance resistance in a non-selected cell by increasing the ratio between voltages applied to ferroelectric capacitors of a selected cell and the non-selected cell respectively is obtained. This ferroelectric memory co... | 01/23/2007 |
| 7160585 | Process for making at least one nanotube between two electrically conducting elements and device for implementing such a process A process makes at least one nanotube between two electrically conducting elements located on a substrate, using, inside a deposition chamber, a microwave power, a magnetic field, and at least one electronic cyclotron resonance zone faciliting ionization and/or diss... | 01/09/2007 |
| 7156046 | Plasma CVD apparatus A plasma CVD apparatus in which microwave power is supplied into a reaction chamber provided inside an annular waveguide through an antenna provided on the inner peripheral part of the waveguide to produce a plasma inside the reaction chamber and to form a film by a... | 01/02/2007 |
| 7148530 | Ferroelectric capacitor and method for manufacturing the same A ferroelectric capacitor and a method for manufacturing the same includes a lower electrode, a dielectric layer, and an upper electrode layer, which are sequentially stacked, wherein the dielectric layer has a multi-layer structure including a plurality of sequenti... | 12/12/2006 |
| 7112353 | Film deposition apparatus and film deposition method A film deposition apparatus for forming a film on a substrate includes a chamber capable of maintaining a reduced-pressure atmosphere. The chamber includes a control electrode, a substrate holder opposite to the control electrode, the substrate holder holding the su... | 09/26/2006 |
| 7109556 | Method to improve drive current by increasing the effective area of an electrode The present invention provides source/drain electrode 100 for a transistor 105. The source/drain electrode 100 comprises a plurality of polysilicon grains 100 located over a source/drain region 115. A metal salicide layer 120 | 09/19/2006 |
| 7101795 | Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer A method and system to form a refractory metal layer on a substrate features nucleating a substrate using sequential deposition techniques in which the substrate is serially exposed to first and second reactive gases followed by forming a layer, employing vapor depo... | 09/05/2006 |
| 7084451 | Circuits with a trench capacitor having micro-roughened semiconductor surfaces A method for forming a trench capacitor. The method includes forming a trench in a semiconductor substrate. A conformal layer of semiconductor material is deposited in the trench. The surface of the conformal layer of semiconductor material is roughened. An insulato... | 08/01/2006 |
| 7085616 | Atomic layer deposition apparatus A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer sup... | 08/01/2006 |
| 7060514 | Process for fabricating films of uniform properties on semiconductor devices A process for forming a thin layer exhibiting a substantially uniform property on an active surface of a semiconductor substrate includes varying the temperature within a reaction chamber while a layer of a material is formed upon the semiconductor substrate. Varyin... | 06/13/2006 |
| 7057223 | Circuit and method for a folded bit line memory cell with vertical transistor and trench capacitor A memory cell for a memory array in a folded bit line configuration. The memory cell includes an access transistor formed in a pillar of single crystal semiconductor material. The access transistor has first and second source/drain regions and a body region that are... | 06/06/2006 |
| 7058245 | Integrated optical circuits An optoelectronic device having a flexible substrate and an optical interconnect (i.e. waveguide) comprising a sol-gel based material formed on the substrate. The sol-gel based waveguide is capable of being integrated into an all-optical system and provides for grea... | 06/06/2006 |
| 7052997 | Method to form etch and/or CMP stop layers In a DRAM fabrication process, a first oxide is provided over a transistor gate and over a substrate extending from under the gate. The deposition is non-conformal in that the oxide is thicker over the gate and over the substrate than it is on the side of the gate. ... | 05/30/2006 |
| 7052552 | Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD A method and apparatus are disclosed for depositing a dielectric film in a gap having an aspect ratio at least as large as 6:1. By cycling the gas chemistry of a high-density-plasma chemical-vapor-deposition system between deposition and etching conditions, the gap ... | 05/30/2006 |
| 7048973 | Metal film vapor phase deposition method and vapor phase deposition apparatus A copper film vapor phase deposition method includes the steps of exposing high-purity copper to a plasma of a gas containing chlorine gas to etch the high-purity copper, thereby generating active CuxCly, wherein x is 1 to 3, y is 1 to 3, gas, ... | 05/23/2006 |
| 7050674 | Method for fabricating polymeric optic waveguide grating Disclosed is a fabrication method of a polymeric optic waveguide grating, the method including: forming a core layer of a polymeric material on a substrate; irradiating an ultraviolet ray to the core layer to pre-cure a surface of the core layer; pressing the pre-cu... | 05/23/2006 |
| 7045935 | Actuator and liquid discharge head, and method for manufacturing liquid discharge head An actuator comprises a laminated structure having a vibration plate, a lower electrode, a piezoelectric element, and an upper electrode laminated sequentially on a basic element, and then, at least the lower electrode of the two electrodes is a thin oxide film dope... | 05/16/2006 |
| 7022948 | Chamber for uniform substrate heating Embodiments of the invention generally provide an apparatus and a method for providing a uniform thermal profile to a plurality of substrates during heat processing. In one embodiment, a cassette containing one or more heated substrate supports is moveably disposed ... | 04/04/2006 |
| 6998579 | Chamber for uniform substrate heating In a first aspect, a first apparatus is provided for heating substrates. The first apparatus includes (1) a chamber having a bottom portion and a top portion; (2) a plurality of heated supports disposed within the chamber to support at least two substrates thereon; ... | 02/14/2006 |
