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| Number | Title | Issue Date |
| 8187679 | Radical-enhanced atomic layer deposition system and method A radical-enhanced atomic layer deposition (REALD) system and method involves moving a substrate along a circulating or reciprocating transport path between zones that provide alternating exposure to a precursor gas and a gaseous radical species. The radical species... | 05/29/2012 |
| 8178170 | Method for depositing inorganic/organic films The present invention describes a method for applying a hybrid coating to a substrate. A coating according to the invention is formed by an inorganic component and an organic component. As a result, this coating has the hybrid character whereby the advantages of int... | 05/15/2012 |
| 8173228 | Particle reduction on surfaces of chemical vapor deposition processing apparatus A method of reducing the amount of particulates generated from the surface of a processing component used during plasma enhanced chemical vapor deposition of thin films. The body of the processing component comprises an aluminum alloy, and an exterior surface of sai... | 05/08/2012 |
| 8168269 | Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool A batch processing chamber includes a chamber housing, a substrate boat for containing a batch of substrates in a process region, and an excitation assembly for exciting species of a processing gas. The excitation assembly is positioned within the chamber housing an... | 05/01/2012 |
| 8168267 | Method for manufacturing a preform for optical fibres by means of a vapour deposition process A method for manufacturing a preform for optical fibers by a vapor deposition process wherein an intermediate step is carried out between one deposition phase and the next deposition phase(s), wherein the intermediate step includes supplying an etching gas to the su... | 05/01/2012 |
| 8168268 | Thin film deposition via a spatially-coordinated and time-synchronized process A deposition system and process for the formation of thin film materials. In one embodiment, the process includes forming an initial plasma from a first material stream and allowing the plasma to evolve in space and/or time to extinguish species that are detrimental... | 05/01/2012 |
| 8119210 | Formation of a silicon oxynitride layer on a high-k dielectric material In one embodiment, a method for depositing a capping layer on a dielectric layer in a process chamber is provided which includes depositing the dielectric layer on a substrate surface, depositing a silicon-containing layer by an ALD process, comprising alternately p... | 02/21/2012 |
| 8084104 | Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition A metal film composed of multiple atomic layers continuously formed by atomic layer deposition of Ru and Ta or Ti includes at least a top section and a bottom section, wherein an atomic composition of Ru, Ta or Ti, and N varies in a thickness direction of the metal ... | 12/27/2011 |
| 8062717 | RF current return path for a large area substrate plasma reactor An apparatus for providing a return current path for RF current between a chamber wall and a substrate support is provided comprising a low impedance flexible curtain having a first end and a second end, the first end adapted to be electrically connected to the cham... | 11/22/2011 |
| 8062716 | Method for forming thin film, apparatus for forming thin film, and method for monitoring thin film forming process A thin film forming method for plasmatizing a mixture gas, the mixture gas being made up of a monomer gas and an oxidizing reactive gas, and for forming a thin film on a surface of a substrate, the thin film being made of an oxide. The method includes forming a firs... | 11/22/2011 |
| 8053036 | Method for designing shower plate for plasma CVD apparatus A method of designing a shower plate for a plasma CVD apparatus includes (a) providing a shower plate having a convex surface configured by a convex equation; (b) forming a film on a wafer using the shower plate in the plasma CVD apparatus; (c) determining a distrib... | 11/08/2011 |
| 8034419 | Method for making a graded barrier coating Disclosed is a method relating to graded-composition barrier coatings comprising first and second materials in first and second zones. The compositions of one or both zones vary substantially continuously across a thickness of the zone in order to achieve improved p... | 10/11/2011 |
| 8034418 | Method for forming thin film and apparatus therefor A plurality of antenna elements, each of which has first and second linear conductors whose first ends are electrically interconnected are formed. The antenna elements are arranged in plane in such a way that the first and second linear conductors are alternated and... | 10/11/2011 |
| 8029874 | Plasma processing apparatus and method for venting the same to atmosphere In a plasma processing apparatus provided with control means, gas supply means includes a first gas supply path for supplying a vent gas into a processing chamber by way of a shower plate and a second gas supply path for supplying a vent gas into the processing cham... | 10/04/2011 |
| 8029873 | Film deposition method and film deposition apparatus of metal film The present invention is a film deposition method of a metal film comprising the steps of: placing an object to be processed having a recess formed in a surface thereof, on a stage in a processing vessel; evacuating the processing vessel to create a vacuum therein; ... | 10/04/2011 |
| 8029872 | Application of a coating forming material onto at least one substrate The invention relates to a method and apparatus for the formation of a coating on a substrate. The coating is formed by the deposition of a coating forming material onto the substrate in an atomised form via a nozzle, nebulizer or the like. The material is applied a... | 10/04/2011 |
| 8025932 | Self-limiting thin film synthesis achieved by pulsed plasma-enhanced chemical vapor deposition Ta2O5 and Al2O3 thin films were fabricated by pulsed plasma-enhanced chemical vapor deposition (PECVD) with simultaneous delivery of O2 and the metal precursor. By appropriately controlling the gas-phase environ... | 09/27/2011 |
| 8025931 | Film formation apparatus for semiconductor process and method for using the same A method for using a film formation apparatus performs a first film formation process, while supplying a first film formation gas into a process field inside a process container, thereby forming a first thin film on a first target substrate inside the process field.... | 09/27/2011 |
| 8021723 | Method of plasma treatment using amplitude-modulated RF power A method for processing a substrate by plasma CVD includes: (i) forming a film on a substrate placed on a susceptor by applying RF power between the susceptor and a shower plate in the presence of a film-forming gas in a reactor; and (ii) upon completion of step (i)... | 09/20/2011 |
| 8017197 | Plasma processing method and plasma processing apparatus A microwave is radiated into a processing chamber (1) from a planar antenna member of an antenna (7) through a dielectric plate (6). With this, a C5F8 gas supplied into the processing chamber (1) from a gas supply me... | 09/13/2011 |
| 8012546 | Method and apparatus for producing semiconductor films and related devices A method for producing a semiconductor film having a chalcopyrite structure including a Ib group element, a IIIb group element and a VIb group element including selenium, the method including cracking selenium with plasma to generate radical selenium, and using the ... | 09/06/2011 |
| 7989034 | Method for continuous atmospheric pressure plasma treatment of workpieces A method for continuous atmospheric plasma treatment of an electrically insulating workpiece. The workpiece is arranged at a distance beneath at least one high-voltage electrode which extends across a direction of movement. The electrode and the workpiece are set in... | 08/02/2011 |
| 7976907 | Method for transferring a functional organic molecule onto a transparent substrate This invention relates to a process for the functionalization of a transparent or translucent substrate by formation of a layer, characterized in that it comprises the stages consisting in evaporating o... | 07/12/2011 |
| 7976908 | High throughput processes and systems for barrier film deposition and/or encapsulation of optoelectronic devices Processes for simultaneously encapsulating multiple optoelectronic devices and/or depositing a barrier film onto multiple substrates suitable for fabrication of optoelectronic devices thereon include the use of a plasma deposition apparatus having multiple pairs of ... | 07/12/2011 |
| 7972663 | Method and apparatus for forming a high quality low temperature silicon nitride layer A method of forming a silicon nitride layer is described. According to the present invention, a silicon nitride layer is deposited by thermally decomposing a silicon/nitrogen containing source gas or a silicon containing source gas and a nitrogen containing source g... | 07/05/2011 |
| 7968154 | Atomisation of a precursor into an excitation medium for coating a remote substrate The invention relates to a method and apparatus for applying and forming a coating on a substrate surface by the application of at least one atomized coating forming material onto the substrate to form the coating. The atomized coating forming material, upon leaving... | 06/28/2011 |
| 7959984 | Methods and arrangement for the reduction of byproduct deposition in a plasma processing system In a plasma processing system, a method of reducing byproduct deposits on a set of plasma chamber surfaces of a plasma processing chamber is disclosed. The method includes providing a deposition barrier in the plasma processing chamber, the deposition barrier is con... | 06/14/2011 |
| 7959985 | Method of integrating PEALD Ta-containing films into Cu metallization A method for forming a modified TaC or TaCN film that may be utilized as a barrier film for Cu metallization. The method includes disposing a substrate in a process chamber of a plasma enhanced atomic layer deposition (PEALD) system configured to perform a PEALD pro... | 06/14/2011 |
| 7947337 | Method and apparatus for plasma enhanced chemical vapor deposition A method and apparatus for coating substrates by means of plasma enhanced vapor deposition are provided, in which at least part of the surroundings of the substrate surface of a substrate to be coated is evacuated and a process gas with a starting substance for the ... | 05/24/2011 |
| 7943205 | Diffusion barrier coatings having graded compositions and devices incorporating the same A composite article comprises a substrate having at least a substrate surface and a graded-composition coating disposed on a substrate surface. The composition of the coating material varies substantially continuously across its thickness. The coating reduces the tr... | 05/17/2011 |
| 7927670 | Silica microspheres, method for making and assembling same and possible uses of silica microspheres The invention concerns silica microspheres (M) having an outer diameter between 50 and 125 μm, preferably between 60 and 90 μm, a wall thickness not less than 1 μm, preferably between 1 and 3 μm and a density between 0.3 and 0.7/cm3, a manufacturing m... | 04/19/2011 |
| 7923076 | Plasma deposition apparatus and deposition method utilizing same A plasma deposition apparatus is provided. The plasma deposition apparatus comprises a chamber. A pedestal is placed in the chamber. A plasma generator is placed in the chamber and over the pedestal. The plasma generator comprises a plasma jet for plasma thin film d... | 04/12/2011 |
| 7914948 | Metallic bipolar plate for fuel cell and method for forming surface layer of the same The present invention provides a metallic bipolar plate for a fuel cell and a method for forming a surface layer of the same, in which the surface layer is formed in such a manner that a plasma nitridation process is performed on the surface of a stainless steel bas... | 03/29/2011 |
| 7901744 | RF plasma-enhanced deposition of fluorinated films Low- or atmospheric pressure RF plasma-enhanced thin film deposition methods are provided for the deposition of hydrophobic fluorinated thin films onto various substrates. The methods include at least two steps. In the first step, RF plasma-mediated deposition is us... | 03/08/2011 |
| 7901743 | Plasma-assisted vapor phase treatment of low dielectric constant films using a batch processing system A method and system for treating a dielectric film on a plurality of substrates includes disposing the plurality of substrates in a batch processing system, the dielectric film on the plurality of substrates having a dielectric constant value less than the dielectri... | 03/08/2011 |
| 7897217 | Method and system for performing plasma enhanced atomic layer deposition A method, computer readable medium, and system for vapor deposition on a substrate that introduce a gaseous film precursor to a process space, increase the volume of the process space from a first size to a second size to form an enlarged process space, introduce a ... | 03/01/2011 |
| 7892611 | Plasma generating electrode assembly A plasma glow discharge and/or dielectric barrier discharge generating assembly (1) comprising at least one pair of substantially equidistant spaced apart electrodes (2), the spacing between the electrodes being adapted to form a plasma zone (8)... | 02/22/2011 |
| 7883750 | Thin films and a method for producing the same An object of the present invention is to provide a method of forming a thin film of excellent quality by generating discharge plasma using gaseous raw material including a carbon source under an atmosphere of a relatively high pressure of 100 Torr or higher. A subst... | 02/08/2011 |
| 7871677 | Surface treating method for substrate A surface treating method for a conductive substrate by using a photo-excitation process, wherein a conducive substrate is placed in a process chamber (1) maintained between 0.001-1 atmospheric pressure, while a negative bias voltage is applied to a substrate... | 01/18/2011 |
| 7871678 | Method of increasing the reactivity of a precursor in a cyclic deposition process The present invention relates to an enhanced cyclic deposition process suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and... | 01/18/2011 |
