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| Number | Title | Issue Date |
| 7326646 | Nitrogen-free ARC layer and a method of manufacturing the same The present invention provides a nitrogen-free ARC layer, which is formed on the basis of silane and carbon dioxide by PECVD in a nitrogen-free deposition atmosphere. The optical characteristics may be tuned in a wide range, wherein, in particular, a back reflection... | 02/05/2008 |
| 7311851 | Apparatus and method for reactive atom plasma processing for material deposition Reactive atom plasma processing can be used to shape, polish, planarize, and clean surfaces of difficult materials with minimal subsurface damage. The apparatus and methods use a plasma torch, such as a conventional ICP torch. The workpiece and plasma torch are move... | 12/25/2007 |
| 7294404 | Graded photocatalytic coatings The invention provides graded photocatalytic coatings. In one aspect, the invention provides a substrate carrying a photocatalytic coating that includes a first graded film region and a second graded film region. The first graded film region has a substantially cont... | 11/13/2007 |
| 7288311 | Barrier film A barrier film is provided having extremely high barrier properties and a good transparency as part of a laminated material having use as a packaging container which may possess an image display medium, the high barrier properties and good transparency which are ach... | 10/30/2007 |
| 7288292 | Ultra low k (ULK) SiCOH film and method The present invention provides a multiphase, ultra low k film which exhibits improved elastic modulus and hardness as well as various methods for forming the same. The multiphase, ultra low k dielectric film includes atoms of Si, C, O and H, has a dielectric constan... | 10/30/2007 |
| 7279112 | Method of manufacture of smart microfluidic medical device with universal coating A method of applying a universal coating for a medical device comprising a medical device component, the medical device component having an outer surface and an inner surface, the universal coating applied to at least the outer surface or the inner surface of the me... | 10/09/2007 |
| 7273638 | High density plasma oxidation A method of oxidizing a substrate having area of about 30,000 mm2 or more. The surface is preferably comprised of silicon-containing materials, such as silicon, silicon germanium, silicon carbide, silicon nitride, and metal suicides. A mixture of oxygen-b... | 09/25/2007 |
| 7244474 | Chemical vapor deposition plasma process using an ion shower grid A chemical vapor deposition process is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural orifices oriented in a non-parallel direction r... | 07/17/2007 |
| 7241690 | Method for conditioning a microelectronics device deposition chamber The present invention provides, in one aspect, a method of conditioning a deposition chamber 100. An undercoat is placed on the walls of a deposition chamber 100 and a pre-deposition coat is deposited over the undercoat with a plasma gas mixture conducted at a high ... | 07/10/2007 |
| 7229666 | Chemical vapor deposition method Methods of chemical vapor deposition include providing a deposition chamber defined at least in part by at least one of a chamber sidewall and a chamber base wall. At least one process chemical inlet to the deposition chamber is included. A substrate is positioned w... | 06/12/2007 |
| 7217659 | Process for producing materials for electronic device A process for producing an electronic device material of a high quality MOS-type semiconductor having an insulating layer and a semiconducting layer. The process includes a step of CVD-treating a substrate to be processed having single-crystal silicon as a main comp... | 05/15/2007 |
| 7198699 | Sputter coating apparatus including ion beam source(s), and corresponding method A coating apparatus deposits a first coating (single or multi-layered) onto a first side of a substrate (e.g., glass substrate) passing through the apparatus, and a second coating (single or multi-layered) onto the other or second side of the substrate. In certain e... | 04/03/2007 |
| 7175713 | Apparatus for cyclical deposition of thin films An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases i... | 02/13/2007 |
| 7125758 | Controlling the properties and uniformity of a silicon nitride film by controlling the film forming precursors We have developed a method of PECVD depositing a-SiNx:H films which are useful in a TFT device as gate dielectric and passivation layers, when a series of TFT devices are arrayed over a substrate having a surface area larger than about 1 m2, wh... | 10/24/2006 |
| 7112453 | Retentate chromatography and protein chip arrays with applications in biology and medicine This invention provides methods of retentate chromatography for resolving analytes in a sample. The methods involve adsorbing the analytes to a substrate under a plurality of different selectivity conditions, and detecting the analytes retained on the substrate by d... | 09/26/2006 |
| 7105460 | Nitrogen-free dielectric anti-reflective coating and hardmask Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-... | 09/12/2006 |
| 7079370 | Apparatus and method for removal of surface oxides via fluxless technique electron attachment and remote ion generation The present invention provides a method and apparatus for the dry fluxing of at least one component and/or solder surface via electron attachment. In one embodiment, there is provided a method for removing oxides from the surface of a component comprising: providing... | 07/18/2006 |
| 7041350 | Polyester composition and articles with reduced acetaldehyde content and method using hydrogenation catalyst A polyester composition with reduced acetaldehyde concentration comprising polyester, at least one hydrogenation catalyst, and at least one source of reactive hydrogen. A method for making the polyester composition is also disclosed along with polyester articles mad... | 05/09/2006 |
| 6964731 | Soil-resistant coating for glass surfaces A glass article which has a water-sheeting coating and a method of applying coatings to opposed sides of a substrate are described. In one embodiment, a glass sheet is provided bearing a sputtered water-sheeting coating comprising silica on an exterior surface and b... | 11/15/2005 |
| 6950589 | Optical switching element and method for manufacturing the same A lower clad, cores, and an upper clad are formed by a chemical vapor deposition method (CVD method). At least one of the additional amount of oxygen, the additional amount of nitrogen, and the additional amount of silicon of a silicon oxynitride film is adjusted so... | 09/27/2005 |
| 6943127 | CVD plasma assisted lower dielectric constant SICOH film A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilic... | 09/13/2005 |
| 6939446 | Soil-resistant coating for glass surfaces A glass article which has a water-sheeting coating and a method of applying coatings to opposed sides of a substrate are described. In one embodiment, a water-sheeting coating 20 comprising silica is sputtered directly onto an exterior surface of the glass. T... | 09/06/2005 |
| 6936309 | Hardness improvement of silicon carboxy films A method for depositing a low dielectric constant film having an improved hardness and elastic modulus is provided. In one aspect, the method comprises depositing a low dielectric constant film having silicon, carbon, and hydrogen, and then treating the deposited fi... | 08/30/2005 |
| 6936310 | Plasma processing method In a plasma processing method making use of a plasma processing gas of a reactant gas and an inert gas, it is aimed at enhancing an efficiency of use of high-frequency power and a reactant gas to increase a processing rate. The plasma processing method comprises sup... | 08/30/2005 |
| 6926926 | Silicon carbide deposited by high density plasma chemical-vapor deposition with bias A SiC-based layer is deposited on a substrate having an electrical resistivity between about 1 and 100 Ω cm. The substrate is disposed in a process chamber. A gaseous mixture having a silicon-containing gas and a hydrocarbon-containing gas is flowed to the process ... | 08/09/2005 |
| 6924235 | Sidewall smoothing in high aspect ratio/deep etching using a discrete gas switching method An improved method for introducing gases into an alternating plasma etching/deposition chamber is provided by the present invention. To minimize the introduction of pressure pulses into the alternating etching/deposition chamber when the deposition and etchant gas s... | 08/02/2005 |
| 6903025 | Method of purging semiconductor manufacturing apparatus and method of manufacturing semiconductor device A method of purging a semiconductor manufacturing apparatus comprises a step of etching a CVD-deposited film deposited in a chamber constituting a semiconductor manufacturing apparatus which has performed a process of forming a CVD film using a CVD process over a se... | 06/07/2005 |
| 6830786 | Silicon oxide film, method of forming the silicon oxide film, and apparatus for depositing the silicon oxide film A silicon oxide film has a ratio of A1 to A2 which is not higher than 0.21, where A1 is a first peak integrated intensity of a first peak belonging to Si—OH and appearing in the vicinity of a wave-number of 970 cm−1, and A2 | 12/14/2004 |
| 6800336 | Method and device for plasma coating surfaces A method for coating surfaces, for which a precursor material is caused to react with the help of plasma and the reaction product is deposited on a surface, the reaction as well as the deposition taking place at atmospheric pressure, such that a plasma jet is genera... | 10/05/2004 |
| 6797339 | Method for forming thin film with a gas cluster ion beam A method of forming a thin film on the surface of a substrate such as silicon, in which a gas cluster (which is a massive atomic or molecular group of a reactive substance taking the gaseous form at room temperature under atmospheric pressure) is formed and then ion... | 09/28/2004 |
| 6797336 | Multi-component substances and processes for preparation thereof The present invention is a method and apparatus for the synthesis of multi-component substances, comprising entities of at least two elements, molecules, grains, crystals, structural units, or phases of matter, in which the scale of the distribution of the elements,... | 09/28/2004 |
| 6737121 | Multilayer article and method of making by arc plasma deposition According to an exemplary embodiment of the invention, a method of forming a plurality of layers on an article comprises steps of generating a plasma by forming an arc between a cathode and an anode; injecting a first material comprising an organic compound into the... | 05/18/2004 |
| 6709715 | Plasma enhanced chemical vapor deposition of copolymer of parylene N and comonomers with various double bonds A method and apparatus for depositing a low dielectric constant film by plasma assisted copolymerization of p-xylylene and a comonomer having carbon-carbon double bonds at a constant RF power level from about 0W to about 100W or a pulsed RF power level from about 20... | 03/23/2004 |
| 6703081 | Installation and method for vacuum treatment or powder production Vacuum treatment installation with a vacuum treatment chamber containing a plasma discharge configuration as well as a gas supply configuration. The plasma discharge configuration has at least two plasma beam discharge configurations with substantially pa... | 03/09/2004 |
| 6673722 | Microwave enhanced CVD system under magnetic field An improved chemical vapor deposition or etching is shown in which cyclotron resonance and photo or plasma CVD cooperate to deposit a layer with high performance at a high deposition speed. The high deposition speed is attributed to the cyclotron resonanc... | 01/06/2004 |
| 6653245 | Method for liquid phase deposition A method for liquid phase deposition, including the steps of providing at least two raw materials from at least two supply devices of a saturation reaction system into a mixture trough and stirring until saturation occurs, filtering out unnecessary solid-... | 11/25/2003 |
| 6616986 | Sequential chemical vapor deposition The present invention provides for sequential chemical vapor deposition by employing a reactor operated at low pressure, a pump to remove excess reactants, and a line to introduce gas into the reactor through a valve. A first reactant forms a monolayer on... | 09/09/2003 |
| 6616985 | Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor An apparatus and method for injecting gas within a plasma reactor and tailoring the distribution of an active species generated by the remote plasma source over the substrate or wafer. The distribution may be uniform, wafer-edge concentrated, or wafer-cen... | 09/09/2003 |
| 6610368 | Leather and a method of dressing same Tanned leather is dry dressed by plasma deposition at atmospheric pressure of a matrix material such as ITO, a silicone, or polyurethane, upon the protein fibers of the surface of the leather and the collagen fiber skeleton below the surface protein fiber... | 08/26/2003 |
| 6607790 | Method of forming a thin film for a semiconductor device The present invention relates to a plasma-enhanced chemical vapor deposition (PECVD) method of depositing a thin layer of a material, such as silicon dioxide, on the surface of a body, such as a semiconductor substrate. The method includes forming in a de... | 08/19/2003 |
