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Pizza Pie With Concentric Rings of Crust
A pizza mold for forming a plurality of concentric raised ridges of dough (i.e., crust) on the surface of a pizza pie.
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| Number | Title | Issue Date |
| 7758928 | Functionalisation of particles This invention relates to a method of functionalizing a powdered substrate. The method comprises the following steps, which method comprises passing a gas into a means for forming excited and/or unstable gas species, typically an atmospheric pressure plasma or the l... | 07/20/2010 |
| 7393562 | Deposition methods for improved delivery of metastable species A method of providing material into a deposition chamber is provided. A reservoir is in fluid communication with the deposition chamber. A metastable specie is provided and contained within the reservoir prior to flowing the metastable specie from the reservoir into... | 07/01/2008 |
| 7368728 | Ionization source for mass spectrometry analysis A new ionization source named Surface Activated Chemical Ionization (SACI) has been discovered and used to improve the sensitivity of the mass spectrometer. According to this invention the ionization chamber of a mass spectrometer is heated and contains a physical n... | 05/06/2008 |
| 7365341 | Gas cluster ion beam emitting apparatus and method for ionization of gas cluster An emitting apparatus 50 has a gas cluster generation chamber 2 and a nozzle 3 as means for generating a gas cluster and emitting the gas cluster to a processing object 10. A group of gas clusters jetted from the nozzle 3 is shaped... | 04/29/2008 |
| 7365005 | Method for filling of a recessed structure of a semiconductor device This invention relates to process sequence by high-speed atomic layer chemical vapor processing that includes deposition for diffusion barriers in the etched features on substrate followed by gap fill and subsequent in-situ removal of the blanket films on the top by... | 04/29/2008 |
| 7361548 | Methods of forming a capacitor using an atomic layer deposition process Methods for forming a capacitor using an atomic layer deposition process include providing a reactant including an aluminum precursor onto a substrate to chemisorb a portion of the reactant to a surface of the substrate. The substrate has an underlying structure inc... | 04/22/2008 |
| 7361387 | Plasma enhanced pulsed layer deposition A process system and a deposition method for depositing a highly controlled layered film on a workpiece is disclosed. The basic component of the apparatus is a pulsing plasma source that is capable of either exciting or not-exciting a first precursor. The pulsing pl... | 04/22/2008 |
| 7357910 | Method for producing metal oxide nanoparticles Method for producing metal oxide nanoparticles. The method includes generating an aerosol of solid metallic microparticles, generating plasma with a plasma hot zone at a temperature sufficiently high to vaporize the microparticles into metal vapor, and directing the... | 04/15/2008 |
| 7359177 | Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output A plasma reactor has a dual frequency plasma RF bias power supply furnishing RF bias power comprising first and second frequency components, f(1), f(2), respectively, and an RF power path having an input end coupled to the plasma RF bias power supply a... | 04/15/2008 |
| 7354482 | Film deposition device A film deposition device for depositing a film includes a depositing chamber for depositing the film with plasma. A plasma quantity monitoring device is disposed in the depositing chamber for monitoring a plasma quantity entering the depositing chamber at real time.... | 04/08/2008 |
| 7351449 | Chemical vapor deposition methods for making powders and coatings, and coatings made using these methods Flame produced vapors for combustion chemical vapor deposition are redirected from the direction of the flame by differential atmospheric pressure, such as positive pressure provided by a blower or negative pressure provided by a vacuum. This allows, for example, lo... | 04/01/2008 |
| 7335850 | Plasma jet electrode device and system thereof A plasma jet electrode device includes an orientation base, a ceramic pipe, a round plate having a plurality of tilted through holes thereon and a high-voltage metal electrode. A dielectric discharging plasma area is formed between the high-voltage metal electrode a... | 02/26/2008 |
| 7299657 | Method of making high strain point glass A method of forming a glass sheet includes obtaining a preform generated from a glass composition and conveying the preform through a channel having a temperature that decreases along a length of the channel to form a glass sheet having a predetermined width and thi... | 11/27/2007 |
| 7294205 | Method for reducing the intrinsic stress of high density plasma films A layer of reduced stress is formed on a substrate using an HDP-CVD system by delaying or interrupting the application of capacitively coupled RF energy. The layer is formed by introducing a process gas into the HDP system chamber and forming a plasma from the proce... | 11/13/2007 |
| 7288491 | Plasma immersion ion implantation process One method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber includes initially depositing a seasoning film on the interior surfaces of the plasma reactor chamber before the workpiece is introduced, by introducing a seasoning... | 10/30/2007 |
| 7279432 | System and method for forming an integrated barrier layer An apparatus and method for forming an integrated barrier layer on a substrate is described. The integrated barrier layer comprises at least a first refractory metal layer and a second refractory metal layer. The integrated barrier layer is formed using a dual-mode ... | 10/09/2007 |
| 7279732 | Enhanced atomic layer deposition A method of enhanced atomic layer deposition is described. In an embodiment, the enhancement is the use of plasma. Plasma begins prior to flowing a second precursor into the chamber. The second precursor reacts with a prior precursor to deposit a layer on the substr... | 10/09/2007 |
| 7279201 | Methods and apparatus for forming precursors This invention relates to a method of forming a precursor for chemical vapour deposition including the steps of: (a) forming metal ions at a source, (b) introducing the ions into a reaction chamber; and (c) exposing the ions to a gas or gasses within the chamber to ... | 10/09/2007 |
| 7276266 | Functionalization of carbon nanotubes Method and system for functionalizing a collection of carbon nanotubes (CNTs). A selected precursor gas (e.g., H2 or F2 or CnHm) is irradiated to provide a cold plasma of selected target particles, such as atomic H or F, i... | 10/02/2007 |
| 7267724 | Thin-film disposition apparatus A dividing plate for a thin-film deposition apparatus divides the interior of the vacuum reaction chamber into a plasma discharge space and a film deposition process space, by fixing or connecting a plurality of laminated plates together by securely bonding them ove... | 09/11/2007 |
| 7250729 | Method of spark-processing silicon and resulting materials The subject invention pertains to a method of spark processing silicon and resulting materials. The subject invention also relates to electroluminescent devices incorporating the materials produced by the subject method. The subject method for spark-processing can e... | 07/31/2007 |
| 7247218 | Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power A plasma reactor process measurement instrument includes an input phase processor receiving wafer bias voltage, current and power and computing an input impedance, an input current and an input voltage to the transmission line; a transmission line processor for comp... | 07/24/2007 |
| 7244474 | Chemical vapor deposition plasma process using an ion shower grid A chemical vapor deposition process is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural orifices oriented in a non-parallel direction r... | 07/17/2007 |
| 7223699 | Plasma etch reactor and method A plasma etch reactor 20 includes a upper electrode 24, a lower electrode 24, a peripheral ring electrode 26 disposed therebetween. The upper electrode 24 is grounded, the peripheral electrode 26 is powered by a high frequen... | 05/29/2007 |
| 7220312 | Methods for treating semiconductor substrates The invention includes a method for treating a plurality of discrete semiconductor substrates. The discrete semiconductor substrates are placed within a reactor chamber. While the substrates are within the chamber, they are simultaneously exposed to one or more of H... | 05/22/2007 |
| 7220937 | Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination A gas distribution ceiling electrode for use as a capacitive source power applicator and gas distribution showerhead in a plasma reactor includes a metal base and a process-compatible protective layer on the interior surface of he electrode having a dopant impurity ... | 05/22/2007 |
| 7214413 | Method and device for generating an activated gas curtain for surface treatment The invention relates to a surface treatment device comprising: electrodes (24a, 24b) that are used to initiate an electric arc of stabilised plasma (14); a stabilising channel (12) which is disposed in a body (10) in... | 05/08/2007 |
| 7211708 | Exhaust processing method, plasma processing method and plasma processing apparatus A chemical-reaction inducing means is provided in an exhaust line connecting a processing space for subjecting a substrate or a film to plasma processing to an exhaust means, and at least either an unreacted gas or byproduct exhausted from the processing space are c... | 05/01/2007 |
| 7204886 | Apparatus and method for hybrid chemical processing A method and apparatus for performing multiple deposition processes is provided. In one embodiment, the apparatus includes a chamber body and a gas distribution assembly disposed on the chamber body. In one embodiment, the method comprises positioning a substrate su... | 04/17/2007 |
| 7201943 | Methods of forming atomic layers of a material on a substrate by sequentially introducing precursors of the material A thin film is formed using an atomic layer deposition process, by introducing a first reacting material including tantalum precursors and titanium precursors onto a substrate. A portion of the first reacting material is chemisorbed onto the substrate. Then, a secon... | 04/10/2007 |
| 7198820 | Deposition of carbon- and transition metal-containing thin films A process depositing a carbon- and transition metal-containing thin film on a substrate involves placing a substrate within a reaction space and sequentially pulsing into the reaction space a transition metal chemical and an organometallic chemical. Following each c... | 04/03/2007 |
| 7196283 | Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface An overhead gas distribution electrode forming at least a portion of the ceiling of a plasma reactor has a bottom surface facing a processing zone of the reactor. The electrode includes a gas supply manifold for receiving process gas at a supply pressure at a top po... | 03/27/2007 |
| 7194197 | Nozzle-based, vapor-phase, plume delivery structure for use in production of thin-film deposition layer A vapor deposition source including a crucible configured to hold a quantity of molten constituent material and at least one nozzle to pass vapor evaporated from the molten constituent material out of the crucible. ... | 03/20/2007 |
| 7189432 | Varying conductance out of a process region to control gas flux in an ALD reactor A deposition system includes a process chamber for conducting an ALD process to deposit layers on a substrate. In one embodiment, instead of varying the gas flux on a substrate in the chamber by controlling the flow of gas upstream of the process chamber, the gas fl... | 03/13/2007 |
| 7186943 | MERIE plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor support, the electrode comprising a portion of the chamber wall, an RF power generator for su... | 03/06/2007 |
| 7182879 | Plasma processing method A plasma processing method, in which a process gas is introduced into an evacuated process chamber for subjecting the target object to a plasma processing. The plasma processing method is featured in that at least a part of the process gas exhausted from the process... | 02/27/2007 |
| 7183208 | Methods for treating pluralities of discrete semiconductor substrates The invention includes a method for treating a plurality of discrete semiconductor substrates. The discrete semiconductor substrates are placed within a reactor chamber. While the substrates are within the chamber, they are simultaneously exposed to one or more of H... | 02/27/2007 |
| 7175713 | Apparatus for cyclical deposition of thin films An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases i... | 02/13/2007 |
| 7172792 | Method for forming a high quality low temperature silicon nitride film A method of forming a silicon nitride film is described. According to the present invention, a silicon nitride film is deposited by thermally decomposing a silicon/nitrogen containing source gas or a silicon containing source gas and a nitrogen containing source gas... | 02/06/2007 |
| 7166323 | Method of coating catalyst carrier layer of metal-metal oxide, method of depositing active catalyst particles onto metal substrates for preparing metal monolith catalyst modules, and module thereby Disclosed is a method of coating a porous carrier layer of metal-metal oxide and depositing an active catalyst component on metal substrates, and a monolith module useful as a catalytic reactor with low pressure drop prepared using the metal substrate having the dep... | 01/23/2007 |
