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| Number | Title | Issue Date |
| 7410675 | Transparent, biaxially orientated polyolefinic film with improved bonding properties The invention relates to the use of a polyolefinic film, with at least one layer, which is made from polyolefinic polymers, whereby said polyolefinic film comprises a bonding layer as outer layer. Said bonding layer contains at least 50 wt. % based on the weight of ... | 08/12/2008 |
| 7371487 | Method of fabricating black matrix of a color filter A method of fabricating a black matrix of a color filter is provided. In the method, a black matrix layer formed of a hydrophobic organic material is formed on an upper surface of a transparent substrate. A black matrix is formed by patterning the black matrix layer... | 05/13/2008 |
| 7368402 | Systems and methods for forming tantalum oxide layers and tantalum precursor compounds A method of forming (and apparatus for forming) a tantalum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and a tantalum precursor compound that includes alkoxide ligands, for example. ... | 05/06/2008 |
| 7368377 | Method for selective deposition of a thin self-assembled monolayer A method for selective deposition of self-assembled monolayers to the surface of a substrate for use as a diffusion barrier layer in interconnect structures is provided comprising the steps of depositing a first self-assembled monolayer to said surface, depositing a... | 05/06/2008 |
| 7341792 | Biaxially oriented saturated polyester film, method of making the same, laminate of biaxially oriented saturated polyester film and method of making the same A biaxially oriented saturated polyester film made by a biaxial orientation method, includes a heat-seal side formed in at least one of two sides of the film, the heat-seal side being made by applying a low-temperature plasma treatment to a film surface so that the ... | 03/11/2008 |
| 7316831 | Tilted vertical alignment of liquid crystals employing inorganic thin film composition and ion beam treatment A liquid crystal display device includes an alignment layer with constituent materials. The constituent materials have a stoichiometric relationship configured to provide a given pretilt angle. Liquid crystal material is provided in contact with the alignment layer.... | 01/08/2008 |
| 7273638 | High density plasma oxidation A method of oxidizing a substrate having area of about 30,000 mm2 or more. The surface is preferably comprised of silicon-containing materials, such as silicon, silicon germanium, silicon carbide, silicon nitride, and metal suicides. A mixture of oxygen-b... | 09/25/2007 |
| 7265404 | Bottom conductor for integrated MRAM A structure that is well suited to connecting an MTJ device to a CMOS integrated circuit is described. It is built out of three layers. The bottom layer serves as a seed layer for the center layer, which is alpha tantalum, while the third, topmost, layer is selected... | 09/04/2007 |
| 7250197 | Plasma treatment of contact lens and IOL Intraocular lenses or contact lenses 20 are placed on a lower spindle 34 and held there by a vacuum in conduit 34. Noble and reactive gases 56, 58 are introduced and a voltage is applied across upper spindle 32 and lower spindle | 07/31/2007 |
| 7229675 | Protective coating method for pieces made of heat resistant alloys The invention relates to metallurgy and mechanical engineering, in particular to the development of methods for providing metallic pieces with protective coatings with a view to improving the performance characteristics thereof. In accordance with the inventive meth... | 06/12/2007 |
| 7220460 | Thin film forming method, optical film, polarizing film and image display method A method of forming a layer or layers are disclosed which comprises the steps of transporting a substrate having a first surface and a second surface on the side opposite the first surface to a gap formed between a first electrode and a second electrode opposing eac... | 05/22/2007 |
| 7214327 | Anisotropic dry etching of Cu-containing layers A method and apparatus for dry etching pure Cu and Cu-containing layers (220, 310) for manufacturing integrated circuits. The invention uses a directional beam of O-atoms with high kinetic energy (340) to oxidize the Cu and Cu-containing layers, and et... | 05/08/2007 |
| 7169440 | Method for removing photoresist and etch residues A method is provided for plasma ashing to remove photoresist remnants and etch residues that are formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving an oxygen-containing gas, where low or zero bias ... | 01/30/2007 |
| 7166342 | Thermoplastic resin film and process for producing the same A heat-shrinkable resin film which has heat shrinkage in the maximum shrinkage direction of 20% or higher when a 10 cm×10 cm square sample cut out thereof is immersed in hot water at 85° C. for 10 seconds, pulled out, subsequently immersed in water at 25° C. for ... | 01/23/2007 |
| 7143990 | Apparatus and method for the production of ophthalmic lenses An apparatus and method for the production of ophthalmic lenses, and particularly contact lenses, which minimizes damage of the lens in removal from the mold. The ophthalmic lens is produced in a mold having a male part and a female part that are placed in proximate... | 12/05/2006 |
| 7141311 | Ferrite thin film for high frequency and method for preparation thereof The present invention provides a Y-type hexagonal ferrite thin film suitable for high frequency devices, having a crystal structure with the c-axis oriented perpendicular to the surface of the thin film. The present invention also provides a method of producing the ... | 11/28/2006 |
| 7141277 | Self-generating inorganic passivation layers for polymer-layered silicate nanocomposites A method for preparing high-use temperature, light-weight polymer/inorganic nanocomposite materials with enhanced thermal stability and performance characteristics, which comprises treating a polymer/inorganic nanocomposite material with oxygen plasma under conditio... | 11/28/2006 |
| 7138187 | Polyvinyl alcohol-based film exhibiting improved adhesion Modifications to the surface of polyvinyl alcohol-based films are disclosed that result in improved adhesion to optical materials. Specifically, the surface chemistry of the polyvinyl alcohol-based film is altered to include fluorine bonds, which surprisingly improv... | 11/21/2006 |
| 7101810 | Transparent article having protective silicon nitride film Transparent articles comprising transparent, nonmetallic substrate and a transparent film stack is sputter deposited on the substrate. The film stack is characterized by including at least one infrared reflective metal film, a dielectric film over the metal film, an... | 09/05/2006 |
| 7094680 | Formation of a tantalum-nitride layer A method of forming a tantalum nitride layer for integrated circuit fabrication is disclosed. In one embodiment, the method includes forming a tantalum nitride layer by chemisorbing a tantalum precursor and a nitrogen precursor on a substrate disposed in a process c... | 08/22/2006 |
| 7084042 | Metal-insulator-metal (MIM) capacitor structure and methods of fabricating same A Metal-Insulator-Metal (MIM) capacitor structure and method of fabricating the same in an integrated circuit improve capacitance density in a MIM capacitor structure by utilizing a sidewall spacer extending along a channel defined between a pair of legs that define... | 08/01/2006 |
| 7077935 | Oand HO barrier material O2 and H2O barrier materials suitable for the protection of LCDs and flexible OLEDs are fabricated on a polymer substrate using dense inorganic barrier layers. A polymer surface having a low surface roughness has an inorganic layer of aluminum ... | 07/18/2006 |
| 7078074 | Lens plasma coating system The invention provides a method for plasma coating of optical lenses, particularly lenses made of silicone-containing polymer. The method of the invention comprising selectively depressurizing and pressurizing an entry hold chamber and an exit hold chamber while con... | 07/18/2006 |
| 7078356 | Low K interlevel dielectric layer fabrication methods A low k interlevel dielectric layer fabrication method includes providing a substrate having integrated circuitry at least partially formed thereon. An oxide comprising interlevel dielectric layer comprising carbon and having a dielectric constant no greater than 3.... | 07/18/2006 |
| 7064077 | Method for high aspect ratio HDP CVD gapfill A method of depositing a high density plasma silicon oxide layer having improved gapfill capabilities. In one embodiment the method includes flowing a process gas consisting of a silicon-containing source, an oxygen-containing source and helium into a substrate proc... | 06/20/2006 |
| 7055937 | Heat generating resistant element film, substrate for ink jet head utilizing the same, ink jet head and ink jet apparatus The invention provides a heat generating resistant element having a high durability and a high resistance suitable for constituting an electrothermal converting member in an ink jet head or an ink jet apparatus. There is employed, as the heat generating resistant el... | 06/06/2006 |
| 7052988 | Applications and methods of making nitrogen-free anti-reflective layers for semiconductor processing A nitrogen-free anti-reflective layer for use in semiconductor photolithography is fabricated in a chemical vapor deposition process, optionally plasma-enhanced, using a gaseous mixture of carbon, silicon, and oxygen sources. By varying the process parameters, accep... | 05/30/2006 |
| 7041335 | Titanium tantalum nitride silicide layer Methods and apparatus of forming titanium tantalum silicon nitride (TixTay(Si)Nz) layers are described. The titanium tantalum silicon nitride (TixTay(Si)Nz) layer may be formed using a cyclical deposi... | 05/09/2006 |
| 7037858 | Method for manufacturing semiconductor device including an ozone process A method for manufacturing a semiconductor device includes forming a barrier layer on an individual device formed on a semiconductor substrate and including a MOS transistor. An ozone process is performed on the barrier layer. A pre-metal dielectric (I′MD) layer i... | 05/02/2006 |
| 7037560 | Film forming method, and film modifying method A film forming and film modifying method utilizing a film forming apparatus which has an alcohol supply unit to form a metal oxide film on a semiconductor wafer in a vacuum atmosphere in which a vaporized metal oxide film material and a vaporized alcohol exist. The ... | 05/02/2006 |
| 7033648 | Means of seeding and metallizing polyimide A method to selectively metallize polyimide with an all-electroless process. ... | 04/25/2006 |
| RE39045 | Method of manufacturing a fluorocarbon-based coating film A method of contacting a substrate having a surface containing hydroxyl groups with a non-aqueous solution containing a material having a chrolosilyl group; washing if desired; coating the substrate with a non-aqueous solvent containing a compound having a fluorocar... | 03/28/2006 |
| 6995419 | Semiconductor constructions having crystalline dielectric layers The invention includes semiconductor constructions. In one implementation, semiconductor construction includes a first conductive material. A first layer of a dielectric material is over the first conductive material. A second layer of the dielectric material is on ... | 02/07/2006 |
| 6958112 | Methods and systems for high-aspect-ratio gapfill using atomic-oxygen generation Methods and systems are provided for depositing silicon oxide in a gap on a substrate. The silicon oxide is formed by flowing a process gas into a process chamber and forming a plasma having an overall ion density of at least 1011 ions/cm3. The... | 10/25/2005 |
| 6946166 | Magnetic recording medium, a method of manufacturing the same, and a magnetic storage device using the magnetic recording medium A magnetic recording medium according to the invention includes a nonmagnetic substrate made of a polymer resin, the nonmagnetic substrate having been treated to improve an adhesion characteristic thereof; an adhesive layer on the nonmagnetic substrate, a nonmagneti... | 09/20/2005 |
| 6942917 | Transparent article having protective silicon nitride film Transparent articles comprising transparent, nonmetallic substrate and a transparent film stack is sputter deposited on the substrate. The film stack is characterized by including at least one infrared reflective metal film, a dielectric film over the metal film, an... | 09/13/2005 |
| 6927166 | Method for manufacturing semiconductor devices and integrated circuit capacitors whereby degradation of surface morphology of a metal layer from thermal oxidation is suppressed A method of manufacturing a semiconductor device having a metal layer is provided in which variation of surface morphology resulting from thermal oxidation is suppressed. The metal layer is pretreated at a first temperature so that an upper surface of the metal laye... | 08/09/2005 |
| 6926932 | Method for forming silicon oxide layer A method for forming a silicon oxide layer in the production of the polysilicon film transistor is disclosed. A plasma surface treatment is performed over a substrate after an amorphous silicon layer has been formed on the substrate by PECVD to transform a portion o... | 08/09/2005 |
| 6919168 | Masking methods and etching sequences for patterning electrodes of high density RAM capacitors A method of etching a noble metal electrode layer disposed on a substrate to produce a semiconductor device including a plurality of electrodes separated by a distance equal to or less than about 0.35 μm and having a noble metal profile equal to or greater than abo... | 07/19/2005 |
| 6916709 | Non-volatile semiconductor memory device and manufacturing method for the same A non-volatile semiconductor memory device comprising: a first insulating film provided on a silicon based substrate; a first electrode provided on the first insulating film as a floating gate; a second insulating film provided on the first electrode; and a second e... | 07/12/2005 |
