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| Number | Title | Issue Date |
| 7655282 | Method of forming patterned film A method of forming a patterned thin film comprises the step of forming a frame having an undercut near the bottom thereof on an electrode film, and the plating step of forming the patterned thin film by plating through the use of the frame. The patterned thin film ... | 02/02/2010 |
| 7622161 | Method of making window unit including diamond-like carbon (DLC) coating A method of making a coated article (e.g., window unit), and corresponding coated article are provided. A layer of or including diamond-like carbon (DLC) is formed on a glass substrate. Then, a protective layer is formed on the substrate over the DLC inclusive layer... | 11/24/2009 |
| 7434475 | Fabricated strain sensor A method of forming a strain sensor from a polymeric film includes the steps of selectively irradiating a surface of the polymer with high energy radiation to change the composition of the polymer and increase the electrical conductivity in selected portions of the ... | 10/14/2008 |
| 7374642 | Treatment process for improving the mechanical, catalytic, chemical, and biological activity of surfaces and articles treated therewith A continuous, uninterrupted two-step treatment process capable of forming nanometer scale physical structures on the surface of articles fabricated from metallic, ceramic, glass, or plastic materials, and then depositing a thin conformal coating on the nanostructure... | 05/20/2008 |
| 7342315 | Method to increase mechanical fracture robustness of porous low k dielectric materials The present invention provides an insulating layer 100 for an integrated circuit 110 comprising a porous silicon-based dielectric layer 120 located over a substrate 130. The insulating layer comprises a densified layer 140 comprisi... | 03/11/2008 |
| 7335611 | Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer A method of forming a conductor in a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on... | 02/26/2008 |
| 7323401 | Semiconductor substrate process using a low temperature deposited carbon-containing hard mask A method of processing a thin film structure on a semiconductor substrate using an optically writable mask includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be etched in accordance with a predetermined pattern... | 01/29/2008 |
| 7320734 | Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage A system for processing a workpiece includes a plasma immersion ion implantation reactor with an enclosure having a side wall and a ceiling and defining a chamber, and a workpiece support pedestal within the chamber having a workpiece support surface facing the ceil... | 01/22/2008 |
| 7313310 | Plasma directing baffle and method of use The present invention provides an assembly that may be used to clean the external surfaces of fiber optic cable. The assembly includes a baffle housing, a plasma source, a cable guide, and brackets to position the baffle and plasma source. The baffle housing defines... | 12/25/2007 |
| 7312148 | Copper barrier reflow process employing high speed optical annealing A method of forming a barrier layer for a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier met... | 12/25/2007 |
| 7312162 | Low temperature plasma deposition process for carbon layer deposition A method of depositing a carbon layer on a workpiece includes placing the workpiece in a reactor chamber, introducing a carbon-containing process gas into the chamber, generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone... | 12/25/2007 |
| 7311881 | Chips, and apparatus and method for reaction analysis A chip having a deaerating function and requiring no bonding or welding for forming a channel, and an apparatus and method for the reaction analysis are provided. The chip contains a first substrate, a second substrate having a liquid inlet and a liquid outlet, and ... | 12/25/2007 |
| 7303982 | Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage A method for implanting ions in a surface layer of a workpiece includes placing the workpiece on a workpiece support in a chamber with the surface layer being in facing relationship with a ceiling of the chamber, thereby defining a processing zone between the workpi... | 12/04/2007 |
| 7294563 | Semiconductor on insulator vertical transistor fabrication and doping process A process for conformally doping through the vertical and horizontal surfaces of a 3-dimensional vertical transistor in a semiconductor-on-insulator structure employs an RF oscillating torroidal plasma current to perform either conformal ion implantation, or conform... | 11/13/2007 |
| 7291545 | Plasma immersion ion implantation process using a capacitively couple plasma source having low dissociation and low minimum plasma voltage A method of ion implanting a species in a workpiece to a selected ion implantation profile depth includes placing a workpiece having a semiconductor material on an electrostatic chuck in or near a processing region of a plasma reactor chamber and applying a chucking... | 11/06/2007 |
| 7291360 | Chemical vapor deposition plasma process using plural ion shower grids A chemical vapor deposition process is carried out in a reactor chamber having a set of plural parallel ion shower grids that divide the chamber into an upper ion generation region and a lower process region, each of the ion shower grids having plural orifices in mu... | 11/06/2007 |
| 7288491 | Plasma immersion ion implantation process One method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber includes initially depositing a seasoning film on the interior surfaces of the plasma reactor chamber before the workpiece is introduced, by introducing a seasoning... | 10/30/2007 |
| 7279023 | High thermal conductivity metal matrix composites Discontinuous diamond particulate containing metal matrix composites of high thermal conductivity and methods for producing these composites are provided. The manufacturing method includes producing a thin reaction formed and diffusion bonded functionally graded int... | 10/09/2007 |
| 7252684 | Ceramic in replacement components A method and apparatus for a prosthesis. At least a portion of the prosthesis is made from a ceramic that is treated with ion implantation, which causes a controllable, bilateral compressive stress of the ceramic. A diamond-like-coating (DLC) can be coated on the ce... | 08/07/2007 |
| 7250727 | High power, long focus electron source for beam processing Beam processing methods including e-beam welding and e-beam evaporation for thin film deposition are implemented with a novel high power, long focus electron source. The high power, long focus electron source generates an e-beam. The e-beam is transported through a ... | 07/31/2007 |
| 7244474 | Chemical vapor deposition plasma process using an ion shower grid A chemical vapor deposition process is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural orifices oriented in a non-parallel direction r... | 07/17/2007 |
| 7241673 | Methods of forming silicon-doped aluminum oxide, and methods of forming transistors and memory devices The invention encompasses a method of forming a silicon-doped aluminum oxide. Aluminum oxide and silicon monoxide are co-evaporated. Subsequently, at least some of the evaporated aluminum oxide and silicon monoxide is deposited on a substrate to form the silicon-dop... | 07/10/2007 |
| 7238952 | Metal ion emission device and process for producing the same, ion beam irradiation device, processing apparatus and analyzing apparatus provided with emission device A metal ion emission device for emitting a metal ion by applying voltage to a molten liquid metal includes a needle-like part having an internal opening in which the liquid metal can be moved. The needle-like part has a first opening for supplying the liquid metal t... | 07/03/2007 |
| 7229675 | Protective coating method for pieces made of heat resistant alloys The invention relates to metallurgy and mechanical engineering, in particular to the development of methods for providing metallic pieces with protective coatings with a view to improving the performance characteristics thereof. In accordance with the inventive meth... | 06/12/2007 |
| 7229910 | Method of producing a semiconductor device having a multi-layered insulation film The object of the present invention is to improve the interfacial adhesion between the film with low dielectric constant and protective film, without damaging the excellent dielectric, flatness and gap-filling characteristics of the organic material of low dielectri... | 06/12/2007 |
| 7226848 | Substrate treating method and production method for semiconductor device A method of hydrogen sintering a substrate including a semiconductor device formed thereon comprises the steps of exciting a processing gas comprising a noble gas and a hydrogen gas to form a plasma comprising hydrogen radicals and hydrogen ions, and exposing the su... | 06/05/2007 |
| 7223676 | Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer A low temperature process for depositing a coating containing any of silicon, nitrogen, hydrogen or oxygen on a workpiece includes placing the workpiece in a reactor chamber facing a processing region of the chamber, introducing a process gas containing any of silic... | 05/29/2007 |
| 7189437 | Mobile plating system and method An exemplary method for using a mobile plating system is provided that includes locating the mobile plating system at a desired location for plating, positioning an external vacuum pump from an interior position of a mobile storage volume of the mobile plasma platin... | 03/13/2007 |
| 7183177 | Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement A method of fabricating a semiconductor-on-insulator structure from a pair of semiconductor wafers, includes forming an oxide layer on at least a first surface of a first one of the wafers and performing a bonding enhancement implantation step by ion implantation of... | 02/27/2007 |
| 7179508 | Conducting polymer films and method of manufacturing the same by surface polymerization using ion-assisted deposition Conducting polymers having improved optical properties, and a method of manufacturing the conducting polymers, are disclosed. The conducting polymers are prepared by a process wherein organic ions and neutral oligomers are deposited simultaneously on a substrate sur... | 02/20/2007 |
| 7166524 | Method for ion implanting insulator material to reduce dielectric constant An integrated microelectronic circuit has a multi-layer interconnect structure overlying the transistors consisting of stacked metal pattern layers and insulating layers separating adjacent ones of said metal pattern layers. Each of the insulating layers is a dielec... | 01/23/2007 |
| 7141096 | Gas-selective permeable membrane and method of manufacturing thereof A gas-selective permeable membrane (1) utilisable in a leak detector for a gas, more particularly helium, comprising a sheet-like body (11) on which at least one reduced thickness area (15) is defined by removing a material from the sheet-like b... | 11/28/2006 |
| 7137354 | Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage A plasma immersion ion implantation reactor for ion implanting a species into a surface layer of a workpiece includes an enclosure which has a side wall and a ceiling defining a chamber and a workpiece support pedestal within the chamber having a workpiece support s... | 11/21/2006 |
| 7112453 | Retentate chromatography and protein chip arrays with applications in biology and medicine This invention provides methods of retentate chromatography for resolving analytes in a sample. The methods involve adsorbing the analytes to a substrate under a plurality of different selectivity conditions, and detecting the analytes retained on the substrate by d... | 09/26/2006 |
| 7109098 | Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing A method of forming semiconductor junctions in a semiconductor material of a workpiece includes ion implanting dopant impurities in selected regions of the semiconductor material, introducing an optical absorber material precursor gas into a chamber containing the w... | 09/19/2006 |
| 7097884 | Stability of ion beam generated alignment layers by surface modification A method for preparing an alignment layer surface provides a surface on the alignment layer. The surface is bombarded with ions, and reactive gas is introduced to the ion beam to saturate dangling bonds on the surface. Another method for preparing an alignment layer... | 08/29/2006 |
| 7094316 | Externally excited torroidal plasma source A plasma reactor for processing a workpiece, including an enclosure defining a vacuum chamber, a workpiece support within the enclosure facing an overlying portion of the enclosure, the enclosure having at least first and second openings therethrough near generally ... | 08/22/2006 |
| 7094670 | Plasma immersion ion implantation process A method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber, includes placing the workpiece on a workpiece support in the chamber, controlling a temperature of the wafer support near a constant level, performing plasma immersi... | 08/22/2006 |
| 7077867 | Prosthetic knee joint having at least one diamond articulation surface Prosthetic joints, components for prosthetic joints, superhard bearing and articulation surfaces, diamond bearing and articulation surfaces, substrate surface topographical features, materials for making joints, bearing and articulation surfaces, and methods for man... | 07/18/2006 |
| 7037813 | Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage A method for implanting ions in a surface layer of a workpiece includes placing the workpiece on a workpiece support in a chamber with the surface layer being in facing relationship with a ceiling of the chamber, thereby defining a processing zone between the workpi... | 05/02/2006 |
