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| Number | Title | Issue Date |
| 8163355 | Formation of carbon-containing material A method includes forming ionic clusters of carbon-containing molecules, which molecules have carbon-carbon sp2 bonds, and accelerating the clusters. A surface of a substrate is irradiated with the clusters. A material is formed on the surface using the c... | 04/24/2012 |
| 8153207 | Fine particle-containing body, fine particle-containing body manufacturing method, storage element, semiconductor device and electronic equipment A silicon oxide of a film thickness of about 50 nm is formed on a surface of a silicon substrate by thermal oxidation. Silver is implanted into the silicon oxide with implantation energy of about 30 keV by a negative ion implantation method. By subjecting the silico... | 04/10/2012 |
| 7794798 | Method for depositing films using gas cluster ion beam processing A method for depositing material on a substrate is described. The method comprises maintaining a reduced-pressure environment around a substrate holder for holding a substrate having a surface, and holding the substrate securely within the reduced-pressure environme... | 09/14/2010 |
| 7718231 | Thin buried oxides by low-dose oxygen implantation into modified silicon A method of fabricating silicon-on-insulators (SOIs) having a thin, but uniform buried oxide region beneath a Si-containing over-layer is provided. The SOI structures are fabricated by first modifying a surface of a Si-containing substrate to contain a large concent... | 05/18/2010 |
| 7566483 | Particle irradiation method for modification of local strain in strain reactive structures Modified strain regions are created in correlation to strain reactive structures that are subjected to a predetermined dimensional precision adjustment. The modified strain regions are created by impacting incident particles into exposed regions of the strain reacti... | 07/28/2009 |
| 7566482 | SOI by oxidation of porous silicon A method in which a SOI substrate structure is fabricated by oxidation of graded porous Si is provided. The graded porous Si is formed by first implanting a dopant (p- or n-type) into a Si-containing substrate, activating the dopant using an activation anneal step a... | 07/28/2009 |
| 7425353 | Enhancement of magnetic media recording performance using ion irradiation to tailor exchange coupling Magnetic medium recording performance can be enhanced by irradiating a magnetic medium with ions having an acceleration voltage of between 10 keV and 100 keV to induce exchange coupling between grains of the magnetic medium. The magnetic medium is exposed to a cumul... | 09/16/2008 |
| 7404981 | Printing electronic and opto-electronic circuits A method is provided for printing electronic and opto-electronic circuits. The method comprises: (a) providing a substrate; (b) providing a film-forming precursor species; (c) forming a substantially uniform and continuous film of the film-forming precursor species ... | 07/29/2008 |
| 7326937 | Plasma ion implantation systems and methods using solid source of dopant material Plasma ion implantation apparatus includes a process chamber, a platen located in the process chamber for supporting a substrate, a dopant source including a solid dopant element and a vaporizer to vaporize dopant material from the solid dopant element, a plasma sou... | 02/05/2008 |
| 7320815 | Method for forming oriented film, oriented film, substrate for electronic device, liquid crystal panel, and electronic device A method for forming an oriented film is provided for forming an oriented film on a base material by irradiating the surface of the base material where the oriented film will be formed with an ion beam comprising nitrogen ions from a direction inclined at a prescrib... | 01/22/2008 |
| 7309514 | Electron beam modification of CVD deposited films, forming low dielectric constant materials A process for forming low dielectric constant dielectric films for the production of microelectronic devices. A dielectric layer is formed on a substrate by chemical vapor depositing a monomeric or oligomeric dielectric precursor in a chemical vapor deposit apparatu... | 12/18/2007 |
| 7261939 | Tablets with coloured patterns and preparation thereof A tablet comprising a core which is at least partially coated with an outer layer obtained by electrostatic deposition of a powder and subsequent fusing of the deposited powder to form a film characterised in that a surface of the tablet coated with said outer layer... | 08/28/2007 |
| 7262897 | Method of forming inorganic alignment film, inorganic alignment film, substrate for electronic device, liquid crystal panel and electronic apparatus A method of forming an inorganic alignment film on a base substrate is provided comprising forming a film made substantially of an inorganic material on the base substrate, and irradiating ion beams onto the surface of the film from a direction inclined at a predete... | 08/28/2007 |
| 7258901 | Directed growth of nanotubes on a catalyst A nanostructure is fabricated using charged particle deposition to deposit a catalyst on a substrate. A charged particle beam is directed to location on the substrate where the catalyst is to be deposited, with a beam-activated precursor gas also being directed to t... | 08/21/2007 |
| 7250196 | System and method for plasma plating An exemplary system and method for plasma plating are provided to generate a deposition layer on a substrate. The method for plasma plating includes positioning a substrate within a vacuum chamber, positioning a depositant in a filament within the vacuum chamber, re... | 07/31/2007 |
| 7234541 | DLC coating for earth-boring bit seal ring An earth-boring bit has a seal assembly with a seal face having a DLC coating. The seal assembly locates between a bearing pin and a cone of the bit. The seal assembly has at least one rigid ring that rotates against a mating surface. The DLC coating is diamond-like... | 06/26/2007 |
| 7229533 | Method of making coated article having low-E coating with ion beam treated and/or formed IR reflecting layer A coated article is provided that may be used as a vehicle windshield, insulating glass (IG) window unit, or the like. An ion beam is used during at least part of forming an infrared (IR) reflecting layer(s) of such a coated article. Advantageously, this has been fo... | 06/12/2007 |
| 7223442 | Method for producing a conducting doped diamond-like nanocomposite film and a conducting doped diamond-like nanocomposite film The present invention provides a method for producing a conducting doped diamond-like nanocomposite film containing, as basic elements, carbon, silicon, metal, oxygen and hydrogen. The film is produced as follows: a substrate is disposed in a vacuum chamber, and a v... | 05/29/2007 |
| 7211355 | Method for producing phase shifter masks The invention relates to a method for producing phase shifter masks for 157 nm lithography. A coating has an organic material and is at least partially configured on the phase shifter mask. This coating is processed with an electron beam. This allows efficient produ... | 05/01/2007 |
| 7204013 | Method of manufacturing a magnetoresistive sensor In a method of forming a magnetoresistive sensor, first and second magnetic leads are formed. Next, a junction of magnetic and electrically conductive material is formed between the first and second magnetic leads. Finally, the magnetic and electrical conductivity o... | 04/17/2007 |
| 7192483 | Method for diamond coating substrates The present invention relates to a method for diamond coating of substrates in which the substrate is exposed in a vacuum atmosphere to a reactive gas mixture excited by means of a plasma discharge, the plasma discharge comprising a plasma beam (14) in an eva... | 03/20/2007 |
| 7189624 | Fabrication method for a semiconductor device including a semiconductor substrate formed with a shallow impurity region A method of manufacturing a semiconductor device includes forming isolation regions, a gate insulator film and gate electrodes, implanting in the silicon substrate with impurity ions, annealing to recover crystallinity of the implanted silicon substrate without diff... | 03/13/2007 |
| 7176114 | Method of depositing patterned films of materials using a positive imaging process The invention generally encompasses a method for forming a pattern on a substrate. The method comprises applying a precursor comprising at least one metal to a substrate to form a precursor layer, exposing a predetermined portion of the precursor layer and developin... | 02/13/2007 |
| 7170663 | Method of forming inorganic alignment film, inorganic alignment film, substrate for electronic device, liquid crystal panel and electronic apparatus A method of forming an inorganic alignment film on a base substrate is provided comprising forming a film made substantially of an inorganic material on the base substrate, and irradiating ion beams onto the surface of the film from a direction inclined at a predete... | 01/30/2007 |
| 7152484 | Sensor for detecting a physical property between two movable bodies having high tribological strain A sensor element (5) detects a physical measurement variable such as a pressure, a temperature, a capacitance, or a gap width between two bodies (10, 20) that move in relation to each other during operation and experience high tribological stress. In c... | 12/26/2006 |
| 7132673 | Device and method for milling of material using ions A milling device is disclosed for the preparation of microscopy specimens or other surface science applications through the use of ion bombardment. The device provides the ability to utilize both gross and fine modification of the specimen surface through the use of... | 11/07/2006 |
| 7125587 | Ion beam for enhancing optical properties of materials A system and method to expose a material to an ion beam during a continuous material production process may include a vacuum fixture to form the ion beam and a slit in the fixture to allow at least a portion of the ion beam to exit the fixture through the slit. The ... | 10/24/2006 |
| 7126141 | Electrooptic system array, charged-particle beam exposure apparatus using the same, and device manufacturing method A charged-particle beam exposure apparatus includes a charged-particle beam source for emitting a charged-particle beam, an electrooptic system array which has a plurality of electron lenses and forms a plurality of intermediate images of the charged-particle beam s... | 10/24/2006 |
| 7123787 | Integrated photonic circuits with vertical connections An integrated photonic device having a vertical optical connection between vertically oriented waveguides and a process for making the same is disclosed. A first waveguide is patterned and etched onto an underlying substrate. A cladding layer is placed over the wave... | 10/17/2006 |
| 7123454 | Longitudinal bias structure having stability with minimal effect on output It is necessary to stabilize the free layer of GMR or TMR devices by providing a longitudinal bias field. As read tracks become very narrow, this field can drastically reduce the strength of the output signal. This problem has been overcome by adding an additional, ... | 10/17/2006 |
| 7084946 | Method of forming inorganic alignment film, inorganic alignment film, substrate for electronic device, liquid crystal panel and electronic apparatus A method of forming an inorganic alignment film is provided comprising a first milling step of irradiating ion beams to a surface of a base substrate, on which the inorganic alignment film is to be formed, from a direction inclined at a predetermined angle θa ... | 08/01/2006 |
| 7052019 | Piston ring and method of manufacturing the same A manufacturing method of a piston ring is developed, wherein the method provides a countermeasure for wear of butt ends of the ion plating film coated piston ring and a countermeasure for breakage of the piston ring and the piston ring manufactured at a low cost. A... | 05/30/2006 |
| 7052840 | Reversible association of nucleic acid with a carboxylated substrate The present invention is directed to methods and compositions wherein nucleic acids are associated with a solid phase that comprises a carboxylated substrate. In specific embodiments, precipitation of the nucleic acids occurs in the absence of salt. ... | 05/30/2006 |
| 7048248 | Fixture and loading method for PVD coating of cutting tool inserts A method of loading cutting tool inserts in a PVD (Physical Vapor Deposition) coating equipment consists in using a tube manufactured of a non-magnetic metallic material surrounding a stack of alternating discs of a magnetic material and iron. The north poles of the... | 05/23/2006 |
| 7038226 | Electrooptic system array, charged-particle beam exposure apparatus using the same, and device manufacturing method A semiconductor manufacturing factory includes a plurality of semiconductor manufacturing apparatuses including an exposure apparatus for exposing a substrate by using a plurality of charged particle beams, a local area network for connecting the plurality of semico... | 05/02/2006 |
| 7033647 | Method of synthesising carbon nano tubes Method of synthesizing carbon nano tubes (CNTs) on a catalyst layer formed on a support member, by catalytic deposition of carbon from a gaseous phase, whereby an ion beam is used prior to, during, and/or after formation of the carbon nano tubes for modifying the ph... | 04/25/2006 |
| 7023138 | Electron impact ion source An ion source configured for integration into both existing ion implanters used in semiconductor manufacturing and emerging ion implantation platforms. The ion source in accordance with the present invention includes the following features, all of which depart from ... | 04/04/2006 |
| 7010192 | Optical fiber array block embedding optical device therein An optical fiber array block includes at least one optical waveguide having an optical fiber zone, and an optical device. An optical signal leakage window is formed at the optical waveguide, and the optical device corresponds to the optical signal leakage window. If... | 03/07/2006 |
| 7001841 | Production method of semiconductor device After a thin first conductive film is formed on a barrier film having a crystal structure, a second conductive film is formed on the first conductive film. Thereafter, the first conductive film and the second conductive film are heated such that the first and second... | 02/21/2006 |
| 6992004 | Implanted barrier layer to improve line reliability and method of forming same A method for manufacturing an integrated circuit having improved electromigration characteristics includes forming an aperture in an interlevel dielectric layer and providing a barrier layer in the aperture. The aperture is filled with a metal material and a barrier... | 01/31/2006 |
