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| Number | Title | Issue Date |
| 5908506 | Continuous vapor deposition apparatus Continuous vapor deposition apparatus for coating objects with a coating material, e.g., parylene, are disclosed. The apparatus comprise an entrance chamber for loading the objects, a process chamber for coating the objects, and an exit chamber for removi... | 06/01/1999 |
| 5908672 | Method and apparatus for depositing a planarized passivation layer A planarized passivation layer is described. A planarized passivation layer of the present invention preferably includes a fluorosilicate glass (FSG) layer and a silicon nitride layer. The FSG layer is preferably deposited using triethoxyfluorosilane (TEF... | 06/01/1999 |
| 5906866 | Process for chemical vapor deposition of tungsten onto a titanium nitride substrate surface A process for chemical vapor deposition of blanket tungsten thin films on titanium nitride proceeds by hydrogen reduction of tungsten hexafluoride at temperatures of 200 to 500° C. Tungsten film nucleation is preferably facilitated by partial removal of ... | 05/25/1999 |
| 5902638 | Method for producing spallation-resistant protective layer on high performance alloys A method for producing on the surface of a nickel- or cobalt-based superalloy article a spallation-resistant aluminum oxide layer. An aluminum oxide layer is produced, typically under tensile stress, by chemical vapor deposition at low temperatures on a m... | 05/11/1999 |
| 5902634 | Permeable solar control film The present invention provides an improved method for making a solar control sheet having one or more metal layers. In the prior art solar control sheets, each metal layer would normally be non-porous so that water vapor would not be readily transmitted t... | 05/11/1999 |
| 5902671 | Oxide coated cutting tool with increased wear resistance and method of manufacture thereof An oxide coated cutting tool including a body coated with refractory single- or multilayers one of which consists of single-phase .kappa.-Al2 O3 characterized by controlled microstructure with crystal planes preferably grown in the (... | 05/11/1999 |
| 5900271 | Method for making plastic film with barrier layers A plastic wrapping film is provided with one or more aluminum layers by vapor deposition and the or each layer is only partially oxidized in an oxidizing plasma so that the resulting barrier layer is distinguishable by slight reduction in transparency but... | 05/04/1999 |
| 5900285 | Method of making a vessel having a wall surface having a barrier coating A plastic vessel has a barrier coating comprising sequentially arranged barrier layers of organic polymer and of inorganic oxides, nitrides or oxynitrides. The barrier coating preferably has at least two inorganic barrier layers. The thickness of the inor... | 05/04/1999 |
| 5895256 | Method for manufacturing LOCOS structure A method for forming a LOCOS structure comprising the steps of providing a substrate, then forming a mask layer above the substrate. Next, the mask layer is patterned to form an opening having a depth not more than the mask layer. Subsequently, the mask l... | 04/20/1999 |
| 5891514 | Method for manufacturing magnetic recording medium In a method for manufacturing a magnetic recording medium, a non-metallic metal base layer, a ferromagnetic alloy thin-film magnetic layer and a protective layer are successively laminated on a non-magnetic substrate. The ferromagnetic alloy thin-film mag... | 04/06/1999 |
| 5888588 | Process for forming a semiconductor device A semiconductor device (10) includes a gate electrode (61) having a silicon/tungsten nitride/tungsten silicon nitride/tungsten silicide composition. The tungsten nitride film (21) and tungsten suicide film (23) are formed using chemical vapor deposition (... | 03/30/1999 |
| 5885894 | Method of planarizing an inter-layer dielectric layer A method of planarizing an inter-layer dielectric layer includes using a high density plasma chemical vapor deposition method to deposit an undoped dielectric, which increases the polishing efficiency in a subsequent chemical-mechanical polishing operatio... | 03/23/1999 |
| 5880055 | Catalyst for polymerization of ethylene The present invention concerns heterogeneous catalysts for polymerization of olefins. The catalysts include at least one Group IVa metal compound on a solid inorganic oxidic support. According to the invention the catalysts are prepared by vapourizing at ... | 03/09/1999 |
| 5876798 | Method of fluorinated silicon oxide film deposition Films of fluorinated silicon oxide, suitable for use as inter-metal dielectrics, have been deposited by means of CVD at reduced pressure using fluorotriethoxysilane (FTES) and tetra-exthyloxysilane (TEOS) as the precursors, together with ozone (mixed with... | 03/02/1999 |
| 5876860 | Thermal barrier coating ceramic structure A multilayered ceramic topcoat of a thermal barrier coating system is useful for high temperature corrosive applications such as hot section components in gas turbine engines. The ceramic topcoat includes at least two layers, each having generally columna... | 03/02/1999 |
| 5876788 | High dielectric TiO2 -SiN composite films for memory applications A method of fabricating a dielectric material useful in advanced memory applications which comprises a metal oxide such as TiO2 or Ta2 O5 interdiffused into a Si3 N4 film is provided.... | 03/02/1999 |
| 5876796 | Process for selectively depositing a refractory metal silicide on silicon, and silicon wafer metallized using this process Process for selectively depositing a refractory metal silicide on a surface of a monocrystalline or polycrystalline silicon wafer, comprising: a step of preparing said surface, consisting in forming a silicon oxide or silicon oxynitride layer having a thi... | 03/02/1999 |
| 5869136 | Method of manufacturing a chemically adsorbed multilayer film A chemically adsorbed multilayer film is formed through the process of replacing a halogen atom on the surface of a chemically adsorbed film with an alkaline metal or changing the halogen atom to a Grignard group by Grignard reaction. This manufacturing m... | 02/09/1999 |
| 5869147 | Method of making a multilayer tool surface with PCNA interruption of CVD, and tool made by the process A tool is made in a coating vessel, depositing upon the base tool body of a hard metal or cermet, a coating by chemical vapor deposition by admitting to the vessel a reactive gas mixture capable of forming a composition selected from the group which consi... | 02/09/1999 |
| 5866198 | Method of fabricating a compound semiconductor having a plurality of layers using a flow compensation technique A vapor deposition device for fabricating a compound semiconductor has many organometallic gas supply systems, each of which for synthesizing and supplying more than one organometallic gas, a first group of valves connected to the organometallic gas suppl... | 02/02/1999 |
| 5863598 | Method of forming doped silicon in high aspect ratio openings A method of forming a doped silicon film on a substrate. According to the present invention, a substrate is placed in a reaction chamber and heated. Next, a silicon containing gas is fed into the reaction chamber to produce a silicon containing gas partia... | 01/26/1999 |
| 5858458 | Mirrors and their production The green reflection color of back surface mirrors produced by deposition of a reflecting layer over two reflection enhancing layers on a glass substrate is controlled by selection of the layer materials and thicknesses to provide a reflection color havin... | 01/12/1999 |
| 5858455 | Method for forming a lateral giant magnetoresistance multilayer for a magnetoresistive sensor A method for forming a magnetoresistive sensor results in the spontaneous formation or "self-assembly" of a giant magnetoresistance multilayer structure of alternating stripes of ferromagnetic and nonferromagnetic metal that are stacked laterally on a spe... | 01/12/1999 |
| 5851603 | Method for making a plasma-enhanced chemical vapor deposited SiO2 Si3 N4 multilayer passivation layer for semiconductor applications A method was achieved for forming a multilayer passivation layer comprised of a silicon oxide/silicon nitride/silicon oxide/silicon nitride by depositing the layers consecutively in a single PECVD system. The method consists of depositing a first SiO... | 12/22/1998 |
| 5851602 | Deposition of high quality conformal silicon oxide thin films for the manufacture of thin film transistors A plasma enhanced chemical vapor deposition process for depositing conformal silicon oxide thin films useful to make thin film transistors which have stable electrical properties and low charge centers onto a substrate comprising flowing a precursor gas m... | 12/22/1998 |
| 5846605 | Coated Article A superalloy turbine blade (10) has a MCRALY bond coating (22) and a thermal barrier coating (24). The thermal barrier coating (24) comprises a plurality of alternate layers (25, 27) which have different structure to produce a plurality of interfaces (26)... | 12/08/1998 |
| 5843518 | Method for making a tantala/silica interference using heat treatment A method for making a tantala/silica interference filter on a vitreous substrate, which filter retains integrity at temperatures in excess of 600° C., includes the steps of depositing by low pressure chemical vapor deposition a first coating of tantala/s... | 12/01/1998 |
| 5837322 | Deposition of polycrystalline diamond film on zinc sulfide substrate having nitride interlayer An adhering, continuous, polycrystalline diamond film is deposited on a z sulfide substrate by forming a refractory nitride interlayer directly on the substrate and then depositing diamond on the interlayer in a vacuum chamber containing a microwave acti... | 11/17/1998 |
| 5834060 | High dielectric constant thin film structure method for forming high dielectric constant thin film and apparatus for forming high dielectric contact thin film There is provided a (Ba, Sr) TiO3 film of higher dielectric constant and less leakage current for serving as a dielectric thin film of a capacitor in a semiconductor memory. DPM (dipivaloylmethanato) compounds of Ba, Sr and Ti are dissolved in ... | 11/10/1998 |
| 5834071 | Method for forming a thin film transistor Method for forming a polycrystalline silicon (ploy-Si) film of a semiconductor device includes forming the gate electrode on a substrate and depositing a dielectric layer on the substrate and the conductive layer. Then a first layer (microcrystalline sili... | 11/10/1998 |
| 5830531 | Coated tool with increased service life A tool with at least one area which is to be exposed to wear, is coated in a vacuum process with a first hard coating lying directly on the tool material and a superimposed exterior friction reducing layer over the hard coating. The grain size of the hard... | 11/03/1998 |
| 5827570 | Composite ceramic articles and method for making such articles A cemented carbide or ceramic substrate has a wear-resistant composite ceramic coating comprising a doped two-phase metal oxide layer comprising a fully dense, adherent, continuous metal oxide phase and a fully dense, adherent, discontinuous metal oxide p... | 10/27/1998 |
| 5827802 | Method of depositing monomolecular layers Method of vacuum depositing a monomolecular layer on a surface, the monomolecular layer comprising at least one element selected from groups IIa, IIIa, IVa, VIIIa, Ib, IIb, IIIb, Vb of the periodic table. The method consists in heating said surface to a p... | 10/27/1998 |
| 5817367 | Method of forming a thin film of copper A method of forming a thin film of copper on a substrate includes a first step of conducting a chemical vapor deposition (CVD) process using a metal organic (MO) source while applying a first bias voltage to the surface of the substrate and a second step ... | 10/06/1998 |
| 5817366 | Method for manufacturing organic electroluminescent element and apparatus therefor The present invention provides a process and apparatus for manufacturing organic electroluminescence cell, wherein the steps after formation of a transparent electrode on a substrate plate up to formation of a protective film are successively carried out ... | 10/06/1998 |
| 5811156 | Method of making a color filter array by colorant transfer and etch A method of making a color filter array on a first substrate having an array of pixels, comprising the steps of: providing a transferable colorant on a second substrate and positioning such transferable layer in transferable relationship with the first su... | 09/22/1998 |
| 5807614 | Method and device for forming an excited gaseous atmosphere lacking electrically charged species used for treating nonmetallic substrates A method of forming a gaseous treatment atmosphere capable of depositing a silicon-containing film on a nonmetallic substrate comprising the steps of: converting an initial treatment gas mixture into a primary treatment gas mixture in an apparatus for for... | 09/15/1998 |
| 5807615 | Method and device for forming an excited gaseous treatment atmosphere lacking electrically charged species used for treating metallic substrates A method of forming a gaseous treatment atmosphere capable of depositing a silicon on a metal substrate comprising the steps of: converting an initial gas mixture into a primary gas mixture in an apparatus for forming excited or unstable gas species, the prima... | 09/15/1998 |
| 5804259 | Method and apparatus for depositing a multilayered low dielectric constant film A method and apparatus for forming a multilayer insulating film on a substrate involves forming a number of carbon-based layers on the substrate, each interlaid with layers of organic material, such as parylene. Preferably, the carbon-based layers are for... | 09/08/1998 |
| 5804249 | Multistep tungsten CVD process with amorphization step A process of forming a tungsten contact plug, on an integrated circuit (IC), that is substantially free of seam formation is described. The process includes forming a dielectric layer on a surface of a substrate, forming a via in the dielectric layer, bla... | 09/08/1998 |
