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Dining Table Having Integral Dishwasher
A space-saving dishwasher, which may be installed within a counter top or table, having a dish-carrying rack that is vertically shiftable through the open top of the dishwasher for facilitating loading and unloading of the dishes.
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| Number | Title | Issue Date |
| 7838073 | Tantalum amide complexes for depositing tantalum-containing films, and method of making same Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microele... | 11/23/2010 |
| 7632543 | Method of making IG window unit and forming silicon oxide based hydrophilic coating using chlorosilane vapor deposition A method of making an insulating glass (IG) window unit is provided. The IG window unit includes at least two spaced apart substrates that are separated from one another by at least one seal and/or spacer, wherein a first one of the substrates supports a hydrophilic... | 12/15/2009 |
| 7429405 | Method of forming a coating film A method for forming a coating film at part of a surface of a substrate includes, in sequence, a first step of applying a masking agent having inert particles over part of the substrate through a screen having blocked areas, a second step of depositing the coating f... | 09/30/2008 |
| 7323219 | Apparatus and method for applying diamond-like carbon coatings The invention relates to a coating and apparatus and method for applying the same, said coating including Diamond Like Carbon (DLC) applied by chemical vapor deposition using a pulsed DC biased power supply, typically having an initial metal layer and followed by a ... | 01/29/2008 |
| 7208195 | Methods and apparatus for deposition of thin films A method for depositing a thin film includes the steps of providing a vapor including at least one selected vapor phase component into an evacuated chamber and condensing the vapor onto a heated substrate to form a liquid phase deposit wherein a temperature of the s... | 04/24/2007 |
| 7208805 | Structures comprising a layer free of nitrogen between silicon nitride and photoresist The invention includes a semiconductor processing method. A first material comprising silicon and nitrogen is formed. A second material is formed over the first material, and the second material comprises silicon and less nitrogen, by atom percent, than the first ma... | 04/24/2007 |
| 7175878 | Cold antireflection layer deposition process The invention concerns a method for making an antiglare stack by vacuum evaporation on an organic substrate (1) at a temperature lower than 150° C., comprising steps which consist in depositing at least a layer of material having a refractive index different... | 02/13/2007 |
| 7083825 | Composition used in producing calcium-rich getter thin film An improved getter device and method for forming a calcium-rich getter thin film in an electronic vacuum device is disclosed. The getter device includes a powder of a Ca—Ba—Al ternary alloy composed of between 53% and 56.8% by weight of aluminum, from 36% to 41.... | 08/01/2006 |
| 7070833 | Method for chemical vapor deposition of silicon on to substrates for use in corrosive and vacuum environments A method of passivating the surface of a substrate to protect the surface against corrosion, the surface effects on a vacuum environment, or both. The substrate surface is placed in a treatment environment and is first dehydrated and then the environment is evacuate... | 07/04/2006 |
| 6905737 | Method of delivering activated species for rapid cyclical deposition A method for providing activated species for a cyclical deposition process is provided. In one aspect, the method includes delivering a gas to be activated into a plasma generator, activating the gas to create a volume of reactive species, delivering a fraction of t... | 06/14/2005 |
| 6887562 | Surface coating of a carbide or a nitride A surface coating comprising at least one carbide layer having the general formula MQC, wherein M is an element from the group consisting of Sc, Y, La, Ti, Zr, Hf, V, Nb, Ta or any mixture thereof, and Q is an element from the group consisting of Mn, Cr, Fe, Co, Ni,... | 05/03/2005 |
| 6884464 | Methods for forming silicon comprising films using hexachlorodisilane in a single-wafer deposion chamber A silicon comprising film and its method of fabrication is described. The silicon comprising film is grown on a substrate. A hexachlorodisilane (HCD) source gas is one of the reactant species used to form the silicon comprising film. The silicon comprising film is f... | 04/26/2005 |
| 6852406 | Anti-static, anti-reflection coating An anti-static, anti-reflection, transparent coating for a transpatent substrate, the coating including at least one electrically conductive layer, wherein the sheet resistance of the coating is less than about 1010 ohm/square. The coating is preferably h... | 02/08/2005 |
| 6808760 | Method for preparing α-dialuminum trioxide nanotemplates A method for preparing an α-Al2O3 nanotemplate of fully crystalline α-Al2O3 directly on the surface of a metal alloy is provided. Also provided is a related apparatus. ... | 10/26/2004 |
| 6797340 | Method for depositing refractory metal layers employing sequential deposition techniques A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber and exposing the substrate surface to a boride. A nucleation layer is then deposited on the substra... | 09/28/2004 |
| 6797337 | Method for delivering precursors A method and apparatus for delivering precursors to a chemical vapor deposition or atomic layer deposition chamber is provided. The apparatus includes a temperature-controlled vessel containing a precursor. An energy source is used to vaporize the precursor at its s... | 09/28/2004 |
| 6767582 | Method of modifying source chemicals in an ald process This invention concerns a method for modifying a source material used in an ALD process, a method for depositing transition metal nitride thin films by an ALD process and apparatus for use in such process. According to the present invention transition metal source m... | 07/27/2004 |
| 6733830 | Processes for depositing low dielectric constant materials Chemical vapor deposition processes result in films having low dielectric constants when suitable chemical precursors are utilized. Preferred chemical precursors include siloxanes, (fluoroalkyl)fluorosiloxanes, (fluoroalkyl)silanes, (alkyl)fluorosilanes, (fluoroalky... | 05/11/2004 |
| 6730243 | Cesium halide storage phosphor with narrow emission spectrum upon UV-excitation A CsBr:Eu phosphor showing a narrow emission spectrum upon UV-excitation and panels including such a phosphor are disclosed. Also methods for preparing such a phosphor have been described. ... | 05/04/2004 |
| 6706325 | Article protected by a thermal barrier coating system and its fabrication An article protected by a thermal barrier coating system is fabricated by providing an article substrate having a substrate surface, thereafter depositing a bond coat on the substrate surface, the bond coat having a bond coat surface, and thereafter processing the b... | 03/16/2004 |
| 6676916 | Method for inducing controlled cleavage of polycrystalline silicon rod To avoid problems associated with the formation of unwanted cracks and spalls during the growth of a polycrystalline silicon rod, a flaw is induced in a filament on which silicon will be deposited to produce a rod. The flaw causes the grown rod to have a ... | 01/13/2004 |
| 6649224 | Method for applying a coating to a substrate A method of applying a coating to a surface of a substrate, comprising the steps of: introducing a substrate into an atmosphere which consists of at least one chemically reactive compound, water and at least one of nitrogen and argon, and thereafter ... | 11/18/2003 |
| 6589611 | Deposition and chamber treatment methods The invention encompasses a method for sequentially processing separate sets of wafers within a chamber. Each set is subjected to plasma-enhanced deposition of material within the chamber utilizing a plasma that is primarily inductively coupled. After the... | 07/08/2003 |
| 6582778 | Method of treatment with a microwave plasma Disclosed is a method of treatment with a microwave plasma by maintaining a reduced pressure in a plasma-treating chamber for treatment with a plasma in which a substrate that is to be treated with a microwave plasma is contained, introducing a treating g... | 06/24/2003 |
| 6572991 | Deposition of γ-Al2O3 by means of CVD There is disclosed a coated body having as the outer layer a layer of γ-Al2 O3 deposited by chemical vapor deposition, preferably at a temperature of from 700-900° C. The γ-Al2 O3 layer is formed through the ... | 06/03/2003 |
| 6562715 | Barrier layer structure for copper metallization and method of forming the structure A barrier layer structure and a method of forming the structure. The barrier layer structure comprises a bilayer, with a first layer formed by chemical vapor deposition and a second layer formed by physical vapor deposition. The first barrier layer compri... | 05/13/2003 |
| 6562405 | Multiple-nozzle thermal evaporation source A multiple nozzle thermal evaporation source includes a plurality of nozzles having a tapered shape. The nozzles may be coated with a thermally conductive material with a low emissivity material.... | 05/13/2003 |
| 6521302 | Method of reducing plasma-induced damage A method of reducing plasma-induced damage in a substrate, comprising providing a post-deposition ramp down of a plasma source power used in generating a plasma for substrate processing.... | 02/18/2003 |
| 6514563 | Method of on-line coating film on the inner walls of the reaction tubes in a hydrocarbon pyrolysis reactor A method of on-line coating a coat film on the inner wall of a reaction tube in a hydrocarbon pyrolysis reactor for preventing the formation and the deposit of coke on the inner walls. This method comprises the steps of vapor depositing a mixed solution o... | 02/04/2003 |
| 6482527 | Pyrochlore thin films and process for making A thin film comprising a pyrochlore represented by the formula: (Bi3x Zn2-3x)(Znx Nb2-x)O7 wherein x is from about 0.45 to about 0.73 and an article comprising a substrate and, coated on the substrate, a thin f... | 11/19/2002 |
| 6465042 | Material having titanium dioxide crystalline orientation film and method for producing the same A material having a titanium dioxide crystalline orientation film oriented in a specific direction on a surface of a substrate is produced by spraying a vaporized titanium alkoxide onto the surface of the substrate heated under atmospheric pressure along ... | 10/15/2002 |
| 6451390 | Deposition of TEOS oxide using pulsed RF plasma A method for the deposition of a silicon dioxide film onto a substrate using plasma enhanced chemical vapor deposition and TEOS is disclosed. The method includes controlling the deposition rate of silicon dioxide on a substrate by pulsing the radio freque... | 09/17/2002 |
| 6428863 | Selected adjustment of dropwise condensation on ion implanted surfaces Process for selected adjustment of dropwise condensation on a surface comprising implanting nitrogen ions with a theoretically predicted minimum dose concentration of 1015 cm-2, the wetting characteristics of the surface being adjust... | 08/06/2002 |
| 6423201 | Method of improving the adhesion of copper The present invention provides a method of improving the adhesion of a copper layer to a barrier layer on a substrate. After deposition of a barrier layer, such as TiN, an amorphous silicon layer is deposited by striking a plasma over the substrate using ... | 07/23/2002 |
| 6420092 | Low dielectric constant nanotube A low dielectric constant nanotube, which can be used in the damascene process, and the fabrication method for a non-selective and a selective nanotube thin film layer are described. The non-selective deposition of the nanotube thin film layer includes fo... | 07/16/2002 |
| 6416824 | Densification A method of deposing a carbon-containing substance in the pores of a porous body comprises establishing an open varying magnetic field flux loop and placing the body such that a magnetic field flux generated by the open magnetic field flux loop passes thr... | 07/09/2002 |
| 6391395 | Method of fabricating a polysilicon layer The present invention is directed to a method of forming a polysilicon layer. A light shield layer having a super-resolution near-field structure is arranged on an amorphous silicon layer. The super-resolution near-field structure includes a first dielect... | 05/21/2002 |
| 6383297 | Method and device for joint oxydation and heat treatment of workpieces Disclosed is a method for joint oxydation and heat treatment of workpieces at temperatures ࣘ1300° in the treatment chamber of an oven containing a neutral or reactive gas in a temperature range above 570°. In order for the process to be reproducible a... | 05/07/2002 |
| 6379873 | Method and apparatus for the construction of photosensitive waveguides There is disclosed a method of constructing photosensitive waveguides on silicon wafers through the utilization of a Plasma Enhanced Vapor Deposition (PECVD) system. The deposition is utilized to vary the refractive index of resulting structures when they... | 04/30/2002 |
| 6365220 | Process for production of actively sterile surfaces A process for production of an actively antimicrobial surface for a substrate and for use in a biologically dynamic environment, such as for treating and preventing microbial infections, including a film consisting of at least an antimicrobial element and... | 04/02/2002 |
