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| Number | Title | Issue Date |
| 8084088 | Method of improving the wafer-to-wafer thickness uniformity of silicon nitride layers Wafer-to-wafer thickness uniformity may be improved significantly in a process for depositing a silicon nitride layer in that the flow rate of the reactant and the chamber pressure are varied during a deposition cycle. By correspondingly adapting the flow rate and/o... | 12/27/2011 |
| 7993705 | Film formation apparatus and method for using the same A method for using a film formation apparatus includes performing film formation of a product film selected from the group consisting of a silicon nitride film and a silicon oxynitride film on a target substrate within a reaction chamber of the film formation appara... | 08/09/2011 |
| 7935384 | Film forming method The present invention relates to a method of forming a metal-nitride film onto a surface of an object to be processed in a processing container in which a vacuum can be created. The method of the invention includes: a step of continuously supplying an inert gas into... | 05/03/2011 |
| 7923070 | Atomic layer deposition method of forming conductive metal nitride-comprising layers This invention includes atomic layer deposition methods of forming conductive metal nitride comprising layers. In one implementation, an atomic layer deposition method of forming a conductive metal nitride comprising layer includes positioning a substrate within a d... | 04/12/2011 |
| 7815970 | Controlled polarity group III-nitride films and methods of preparing such films The present invention provides methods of preparing Group III-nitride films of controlled polarity and substrates coated with such controlled polarity films. In particular, the invention provides substrate preparation steps that optimize the substrate surface for fa... | 10/19/2010 |
| 7807225 | High density plasma non-stoichiometric SiOxNy films A high-density plasma method is provided for forming a SiOXNY thin-film. The method provides a substrate and introduces a silicon (Si) precursor. A thin-film is deposited overlying the substrate, using a high density (HD) plasma-enhanced chemic... | 10/05/2010 |
| 7732014 | Process for diffusing titanium and nitride into a material having a generally compact, granular microstructure A method for diffusing titanium and nitride into a base material having a generally compact, granular microstructure (e.g., carbide). The method generally includes the steps of providing a base material having a generally compact, granular microstructure; providing ... | 06/08/2010 |
| 7704556 | Silicon nitride film forming method The silicon nitride film forming method deposits a silicon nitride film on the substrate surface by maintaining the heating element at a predetermined temperature and by decomposing and/or activating a raw material gas supplied from the gas supply system. ... | 04/27/2010 |
| 7470450 | Forming a silicon nitride film A silicon nitride film may be deposited on a work piece using conventional deposition techniques and a selected source for use as a silicon precursor. A nitrogen precursor may also be selected for film deposition. Using the selected precursor(s), the temperature for... | 12/30/2008 |
| 7439180 | Dispenser system for atomic beam assisted metal organic chemical vapor deposition (MOCVD) A dispenser system for use in atomic beam assisted metal organic chemical vapor deposition is provided as well as a method of depositing an ultra-thin film using the same. The inventive dispenser system includes an atomic source having an unimpeded line of site to a... | 10/21/2008 |
| 7396563 | Ceramic thin film on various substrates, and process for producing same The process of Polymer Assisted Chemical Vapor Deposition (PACVD) and the semiconductor, dielectric, passivating or protecting thin films produced by the process are described. A semiconductor thin film of amorphous silicon carbide is obtained through vapor depositi... | 07/08/2008 |
| 7390535 | Simple chemical vapor deposition system and methods for depositing multiple-metal aluminide coatings A chemical vapor deposition (CVD) system and method for applying an aluminide coating constituted by two or more extrinsic metal components on a jet engine component. The aluminide coating is capable of forming a protective complex oxide upon subsequent heating in a... | 06/24/2008 |
| 7384665 | Formation of protective coatings for color filters A structure and method for producing color filters with a protective silation layer is described. In one embodiment, each filter is coated with a silation layer to prevent bleeding of material between closely spaced filters during the fabrication process. In a secon... | 06/10/2008 |
| 7378129 | Atomic layer deposition methods of forming conductive metal nitride comprising layers This invention includes atomic layer deposition methods of forming conductive metal nitride comprising layers. In one implementation, an atomic layer deposition method of forming a conductive metal nitride comprising layer includes positioning a substrate within a d... | 05/27/2008 |
| 7368382 | Atomic layer deposition methods The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition ... | 05/06/2008 |
| 7344755 | Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers The present disclosure provides methods and apparatus that may be used to process microfeature workpieces, e.g., semiconductor wafers. Some aspects have particular utility in depositing TiN in a batch process. One implementation involves pretreating a surface of a p... | 03/18/2008 |
| 7326438 | Method for depositing nitride film using chemical vapor deposition apparatus of single chamber type The present invention relates to a method for depositing a nitride film using a chemical vapor deposition apparatus of single chamber type, and more particularly to a method for depositing a nitride film that is capable of depositing the nitride film in which an are... | 02/05/2008 |
| 7311946 | Methods for depositing metal films on diffusion barrier layers by CVD or ALD processes A process is described for depositing a metal film on a substrate surface having a diffusion barrier layer deposited thereupon. In one embodiment of the present invention, the process includes: providing a surface of the diffusion barrier layer that is substantially... | 12/25/2007 |
| 7309514 | Electron beam modification of CVD deposited films, forming low dielectric constant materials A process for forming low dielectric constant dielectric films for the production of microelectronic devices. A dielectric layer is formed on a substrate by chemical vapor depositing a monomeric or oligomeric dielectric precursor in a chemical vapor deposit apparatu... | 12/18/2007 |
| 7303991 | Atomic layer deposition methods The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition ... | 12/04/2007 |
| 7285312 | Atomic layer deposition for turbine components A method and superalloy component for depositing a layer of material onto gas turbine engine components by atomic layer deposition. A superalloy component may have a ceramic thermal barrier coating on at least a portion of its surface, comprising a superalloy substr... | 10/23/2007 |
| 7282158 | Method of processing a workpiece This invention relates to a method of processing a workpiece in a chamber. Initially a surface of the workpiece is treated by a process which includes supplying a reactive gas to the chamber through a first gas supply and the surface is then further treated using a ... | 10/16/2007 |
| 7279432 | System and method for forming an integrated barrier layer An apparatus and method for forming an integrated barrier layer on a substrate is described. The integrated barrier layer comprises at least a first refractory metal layer and a second refractory metal layer. The integrated barrier layer is formed using a dual-mode ... | 10/09/2007 |
| 7270719 | Method for manufacturing surface hardened stainless steel with improved wear resistance and low static friction properties The invention relates to the use of PVD technique for the application of a low static friction and wear resistant coating consisting essentially of titanium nitride or a diamond-like carbon—DLC, with or without an addition of tungsten carbide, on a stainless steel... | 09/18/2007 |
| 7271077 | Deposition methods with time spaced and time abutting precursor pulses An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substra... | 09/18/2007 |
| 7247594 | Catalysts for olefin polymerization This invention relates to the field of olefin polymerization catalyst compositions, and methods for the polymerization and copolymerization of olefins, including polymerization methods using a catalyst composition. One aspect of this invention is the formation and u... | 07/24/2007 |
| 7208197 | Method of depositing copper on a support A process for the deposition of copper on a support. The process includes bringing a copper precursor, in the vapor phase, into contact with a heated support, optionally in the presence of hydrogen. The copper precursor is in the form of a CuCl or CuBr composition i... | 04/24/2007 |
| 7208427 | Precursor compositions and processes for MOCVD of barrier materials in semiconductor manufacturing Metalorganic precursors of the formula: (R1R2N)a−bMXb wherein: M is the precursor metal center, selected from the group of Ta, Ti, W, Nb, Si, Al and B; a is a number equal to the valence of M; 1≦bâ‰... | 04/24/2007 |
| 7204886 | Apparatus and method for hybrid chemical processing A method and apparatus for performing multiple deposition processes is provided. In one embodiment, the apparatus includes a chamber body and a gas distribution assembly disposed on the chamber body. In one embodiment, the method comprises positioning a substrate su... | 04/17/2007 |
| 7192626 | Methods for producing silicon nitride films and silicon oxynitride films by thermal chemical vapor deposition Silicon nitride film is formed on substrate by feeding trisilylamine and ammonia into a CVD reaction chamber that contains a substrate. The ammonia gas/trisilylamine gas flow rate ratio is set to a value of at least about 10 and/or the thermal CVD reaction is run at... | 03/20/2007 |
| 7189431 | Method for forming a passivated metal layer A method for forming a passivated metal layer that preserves the properties and morphology of an underlying metal layer during subsequent exposure to oxygen-containing ambients. The method includes providing a substrate in a process chamber, exposing the substrate t... | 03/13/2007 |
| 7172792 | Method for forming a high quality low temperature silicon nitride film A method of forming a silicon nitride film is described. According to the present invention, a silicon nitride film is deposited by thermally decomposing a silicon/nitrogen containing source gas or a silicon containing source gas and a nitrogen containing source gas... | 02/06/2007 |
| 7166516 | Method for fabricating a semiconductor device including the use of a compound containing silicon and nitrogen to form an insulation film of SiN or SiCN The semiconductor device fabrication method comprises the step of forming gate electrode 20 on a semiconductor substrate 10 with a gate insulation film 18 formed therebetween; the step of implanting dopants in the semiconductor substrate 10 | 01/23/2007 |
| 7150789 | Atomic layer deposition methods An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substra... | 12/19/2006 |
| 7148367 | Organometallic compound, its synthesis method, and solution raw material and metal-containing thin film containing the same The organometallic compound of the present invention is a compound that has bonds between metal atoms and nitrogen atoms or bonds between semimetal atoms and nitrogen atoms, and the content of chlorine in the compound is 200 ppm or less and the content of water is 3... | 12/12/2006 |
| 7141496 | Method of treating microelectronic substrates A method of treating a dielectric surface portion of a semiconductor substrate, comprising the steps of: (a) providing a semiconductor substrate having a dielectric surface portion; and then (b) treating said dielectric surface portion with a coating reagent, the co... | 11/28/2006 |
| 7125582 | Low-temperature silicon nitride deposition A method including combining a silicon source precursor and a nitrogen source precursor at a temperature up to 550° C.; and forming a silicon nitride film. A system including a chamber; a silicon precursor source coupled to the chamber; a controller configured to c... | 10/24/2006 |
| 7122222 | Precursors for depositing silicon containing films and processes thereof Processes for precursors for silicon dielectric depositions of silicon nitride, silicon oxide and silicon oxynitride on a substrate using a hydrazinosilane of the formula: [R12N—NH]nSi(R2)4−n | 10/17/2006 |
| 7122474 | Method for forming barrier metal of semiconductor device A method for forming a barrier metal of a semiconductor device wherein a TiSiN layer having an atomic layer thickness is deposited by performing deposition of an Si layer inside a contact hole of a semiconductor device using an atomic layer deposition process and by... | 10/17/2006 |
| 7105441 | Preheating of chemical vapor deposition precursors Chemical vapor deposition systems include elements to preheat reactant gases prior to reacting the gases to form layers of a material on a substrate, which provides devices and systems with deposited layers substantially free of residual compounds from the reaction ... | 09/12/2006 |
