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| Number | Title | Issue Date |
| 8043660 | Method for manufacturing polycrystalline silicon A method for manufacturing polycrystalline silicon with high quality by effectively preventing undesired shape such as giving an rough surface to silicon rods or an irregularity in diameter of the silicon rods. The method for manufacturing polycrystalline silicon in... | 10/25/2011 |
| 7462376 | CVD method for forming silicon nitride film A CVD method for forming a silicon nitride film includes exhausting a process chamber (8) that accommodates a target substrate (W), and supplying a silane family gas (HCD) and ammonia gas (NH3) into the process chamber, thereby forming a silicon ni... | 12/09/2008 |
| 7422774 | Method for forming ultra low k films using electron beam The present invention generally provides a method for depositing a low dielectric constant film using an e-beam treatment. In one aspect, the method includes delivering a gas mixture comprising one or more organosilicon compounds and one or more hydrocarbon compound... | 09/09/2008 |
| 7419701 | Low-temperature, low-resistivity heavily doped p-type polysilicon deposition A method to create a low resistivity P+in-situ doped polysilicon film at low temperature from SiH4 and BCl3 with no anneal required. At conventional dopant concentrations using these source gases, as deposition temperature decreases below about... | 09/02/2008 |
| 7404990 | Non-thermal process for forming porous low dielectric constant films Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In certain embodiments of the invention, there is provided a low-temperatu... | 07/29/2008 |
| 7396565 | Multiple precursor cyclical deposition system Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate structure at least partially overlap. One embodiment of depositing a t... | 07/08/2008 |
| 7365029 | Method for silicon nitride chemical vapor deposition Embodiments of the invention generally provide a method for depositing a film containing silicon (Si) and nitrogen (N). In one embodiment, the method includes heating a substrate disposed in a processing chamber to a temperature less than about 650 degrees Celsius, ... | 04/29/2008 |
| 7300885 | Film formation apparatus and method for semiconductor process A film formation method for a semiconductor process is arranged to form a thin film on a target substrate by CVD, while supplying a first process gas for film formation and a second process gas for reacting with the first process gas to a process field accommodating... | 11/27/2007 |
| 7261919 | Silicon carbide and other films and method of deposition A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlle... | 08/28/2007 |
| 7211295 | Silicon dioxide film forming method Disclosed herein is a silicon dioxide film forming method including: a reaction chamber heating step of heating a reaction chamber to a predetermined temperature, the reaction chamber containing an object to be processed; a gas pretreating step of energizing a proce... | 05/01/2007 |
| 7208195 | Methods and apparatus for deposition of thin films A method for depositing a thin film includes the steps of providing a vapor including at least one selected vapor phase component into an evacuated chamber and condensing the vapor onto a heated substrate to form a liquid phase deposit wherein a temperature of the s... | 04/24/2007 |
| 7172792 | Method for forming a high quality low temperature silicon nitride film A method of forming a silicon nitride film is described. According to the present invention, a silicon nitride film is deposited by thermally decomposing a silicon/nitrogen containing source gas or a silicon containing source gas and a nitrogen containing source gas... | 02/06/2007 |
| 7166516 | Method for fabricating a semiconductor device including the use of a compound containing silicon and nitrogen to form an insulation film of SiN or SiCN The semiconductor device fabrication method comprises the step of forming gate electrode 20 on a semiconductor substrate 10 with a gate insulation film 18 formed therebetween; the step of implanting dopants in the semiconductor substrate 10 | 01/23/2007 |
| 7156923 | Silicon nitride film forming method, silicon nitride film forming system and silicon nitride film forming system precleaning method A thermal processing system (1) includes a reaction vessel (2) capable of forming a silicon nitride film on semiconductor wafers (10) through interaction between hexachlorodisilane and ammonia, and an exhaust pipe (16) connected to the re... | 01/02/2007 |
| 7125582 | Low-temperature silicon nitride deposition A method including combining a silicon source precursor and a nitrogen source precursor at a temperature up to 550° C.; and forming a silicon nitride film. A system including a chamber; a silicon precursor source coupled to the chamber; a controller configured to c... | 10/24/2006 |
| 7122222 | Precursors for depositing silicon containing films and processes thereof Processes for precursors for silicon dielectric depositions of silicon nitride, silicon oxide and silicon oxynitride on a substrate using a hydrazinosilane of the formula: [R12N—NH]nSi(R2)4−n | 10/17/2006 |
| 7081271 | Cyclical deposition of refractory metal silicon nitride Embodiments of the invention relate to an apparatus and method of cyclical layer deposition utilizing three or more precursors. In one embodiment, the method includes providing at least one cycle of precursors to form a ternary material layer. Providing at least one... | 07/25/2006 |
| 7049200 | Method for forming a low thermal budget spacer A method of forming a sidewall spacer on a gate electrode of a metal oxide semiconductor device that includes striking a first plasma to form an oxide layer on a side of the gate electrode, where the first plasma is generated from a oxide gas that includes O3 | 05/23/2006 |
| 7041335 | Titanium tantalum nitride silicide layer Methods and apparatus of forming titanium tantalum silicon nitride (TixTay(Si)Nz) layers are described. The titanium tantalum silicon nitride (TixTay(Si)Nz) layer may be formed using a cyclical deposi... | 05/09/2006 |
| 7005160 | Methods for depositing polycrystalline films with engineered grain structures Methods for controlling the grain structure of a polycrystalline Si-containing film involve depositing the film in stages so that the morphology of a first film layer deposited in an initial stage favorably influences the morphology of a second film layer deposited ... | 02/28/2006 |
| 6971266 | Thermosensitive flow rate detecting element and method for the manufacture thereof Cavities are formed so as to extend from a rear surface side of a base material to a protective film, an electrically-insulating film is formed on a rear surface of the base material, wall surfaces of the cavities, and exposed surfaces of the protective film, and a ... | 12/06/2005 |
| 6884473 | Method for fabricating metal silicide A method for fabricating a metal silicide layer includes forming a dielectric layer on a substrate, followed by forming a polysilicon material conductive layer on the dielectric layer. An adhesion layer is then formed on the conductive layer, wherein the adhesion la... | 04/26/2005 |
| 6884464 | Methods for forming silicon comprising films using hexachlorodisilane in a single-wafer deposion chamber A silicon comprising film and its method of fabrication is described. The silicon comprising film is grown on a substrate. A hexachlorodisilane (HCD) source gas is one of the reactant species used to form the silicon comprising film. The silicon comprising film is f... | 04/26/2005 |
| 6881636 | Methods of forming deuterated silicon nitride-containing materials The invention includes methods of forming deuterated silicon nitride-containing materials from at least one deuterated nitrogen compound in combination with one or more silicon-containing compounds that do not contain hydrogen isotopes. Suitable deuterated nitrogen ... | 04/19/2005 |
| 6861104 | Method of enhancing adhesion strength of BSG film to silicon nitride film A method of enhancing adhesion strength of a boro-silicate glass (BSG) film to a silicon nitride film is provided. A semiconductor substrate with a silicon nitride film formed thereon is provided. The silicon nitride film is then exposed to oxygen-containing plasma ... | 03/01/2005 |
| 6846516 | Multiple precursor cyclical deposition system Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate structure at least partially overlap. One embodiment of depositing a t... | 01/25/2005 |
| 6815014 | Corona-generated chemical vapor deposition on a substrate A process for creating plasma polymerized deposition on a substrate by a corona discharge is described. The corona discharge is created between an electrode and a counterelectrode supporting a substrate. A mixture of a balance gas and a working gas is flowed rapidly... | 11/09/2004 |
| 6815003 | Method for fabricating electrode for lithium secondary battery A method for fabricating an electrode for lithium secondary battery formed by depositing a thin film composed of active material capable of lithium storage and release, on a metallic foil to be used as a current collector, in which the surface of the metallic foil i... | 11/09/2004 |
| 6815007 | Method to solve IMD-FSG particle and increase Cp yield by using a new tougher UFUN season film A method for reducing contaminants in a processing chamber having an inner wall by seasoning the walls. The method comprising the following steps. A first USG film is formed over the processing chamber inner wall. An FSG film is formed over the first USG film. A sec... | 11/09/2004 |
| 6797337 | Method for delivering precursors A method and apparatus for delivering precursors to a chemical vapor deposition or atomic layer deposition chamber is provided. The apparatus includes a temperature-controlled vessel containing a precursor. An energy source is used to vaporize the precursor at its s... | 09/28/2004 |
| 6793969 | Method of forming an oxidation-resistant TiSiN film A CVD process of forming a conductive film containing Ti, Si and N includes a first step of supplying gaseous sources of Ti, Si and N simultaneously to grow a conductive film and a second step of supplying the gaseous sources of Ti, Si and N in a state that a flow r... | 09/21/2004 |
| 6780476 | Method of forming a film using chemical vapor deposition An object of the present invention is to provide a liquid material for chemical vapor deposition (CVD), a method of forming a film by CVD and a CVD apparatus, capable of achieving film formation of a silicate compound of good quality. A liquid material for CVD inclu... | 08/24/2004 |
| 6767582 | Method of modifying source chemicals in an ald process This invention concerns a method for modifying a source material used in an ALD process, a method for depositing transition metal nitride thin films by an ALD process and apparatus for use in such process. According to the present invention transition metal source m... | 07/27/2004 |
| 6746709 | Method for manufacture of a solar cell The invention relates to a method for manufacture of a semiconductor component by the formation of a hydrogenous layer containing silicon on a substrate comprising or containing silicon such as a wafer or film. In order to achieve a good surface and volume passivati... | 06/08/2004 |
| 6730355 | Chemical vapor deposition method of forming a material over at least two substrates A first substrate is provided within a chemical vapor deposition chamber. A reactive gas mixture comprising TiCl4 and a silane is provided within the chamber effective to first chemically vapor deposit a titanium silicide comprising layer on the first sub... | 05/04/2004 |
| 6716770 | Low dielectric constant material and method of processing by CVD Organofluorosilicate glass films contain both organic species and inorganic fluorines, exclusive of significant amounts of fluorocarbon species. Preferred films are represented by the formula SivOwCxHyFz, where ... | 04/06/2004 |
| 6713127 | Methods for silicon oxide and oxynitride deposition using single wafer low pressure CVD An oxide and an oxynitride films and their methods of fabrication are described. The oxide or the oxynitride film is grown on a substrate that is placed in a deposition chamber. A silicon source gas (or a silicon source gas with a nitridation source gas) and an oxid... | 03/30/2004 |
| 6696109 | Chemical vapor deposition process for depositing titanium silicide films from an organometallic compound A process for depositing titanium silicide films via chemical vapor deposition takes place in a deposition chamber that has been evacuated to less than atmospheric pressure and utilizes, as reactants, the organometallic compound tertiary-butyltris-dimethy... | 02/24/2004 |
| 6689422 | CVD codeposition of A1 and one or more reactive (gettering) elements to form protective aluminide coating CVD aluminide coatings including a small concentration of a reactive, gettering element for surface active impurities dispersed therein are formed for improved oxidation resistance. The aluminide coatings are formed by CVD codeposition of Al and the gette... | 02/10/2004 |
| 6673393 | Oxide coated cutting tool A body is at least partially coated with one or more refractory layers of which at least one layer is of a finegrained .kappa.-Al2 O3. Said .kappa.-Al2 O3 layer has equiaxed grains with an average grain size of ... | 01/06/2004 |
