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Microwave Oven With Removable Storage Cassette in Dashboard of Motor Vehicle
A microwave oven adapted for use within a motor vehicle dashboard area. The microwave oven has a removable storage cassette, and slidable platforms for securing and serving containers of beverages and foods.
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| Number | Title | Issue Date |
| 7341945 | Method of fabricating semiconductor device A method of fabricating a semiconductor device prevents agglomeration of a seed metal layer in a recess. A recess is formed in a dielectric layer formed on or over a wafer. A seed metal layer (e.g., Cu or Cu alloy) is then formed on a bottom face and an inner side f... | 03/11/2008 |
| 7329934 | Smooth metal semiconductor surface and method for making the same A method for reducing the surface roughness of a metal layer is provided. In some embodiments, the method may include polishing the metal layer to a level substantially above any layers arranged directly beneath the metal layer. In some cases, the semiconductor topo... | 02/12/2008 |
| 7194197 | Nozzle-based, vapor-phase, plume delivery structure for use in production of thin-film deposition layer A vapor deposition source including a crucible configured to hold a quantity of molten constituent material and at least one nozzle to pass vapor evaporated from the molten constituent material out of the crucible. ... | 03/20/2007 |
| 7189431 | Method for forming a passivated metal layer A method for forming a passivated metal layer that preserves the properties and morphology of an underlying metal layer during subsequent exposure to oxygen-containing ambients. The method includes providing a substrate in a process chamber, exposing the substrate t... | 03/13/2007 |
| 7157798 | Selective refractory metal and nitride capping A method for creating a refractory metal and refractory metal nitride cap effective for reducing copper electromigration and copper diffusion is described. The method includes depositing a refractory metal nucleation layer and nitriding at least the upper portion of... | 01/02/2007 |
| 7141494 | Method for reducing tungsten film roughness and improving step coverage A tungsten nucleation film is formed on a surface of a semiconductor substrate by alternatively providing to that surface, reducing gases and tungsten-containing gases. Each cycle of the method provides for one or more monolayers of the tungsten film. The film is co... | 11/28/2006 |
| 7119443 | Semiconductor integrated circuit device having a conductive film which contains metal atoms bondable to a halogen element The semiconductor device is formed according to the following steps. A TiN film 71 and a W film 72 are deposited on a silicon oxide film 64 including the inside of a via-hole 66 by the CVD method and thereafter, the W film 72 and T... | 10/10/2006 |
| 6995081 | Systems and methods for forming tantalum silicide layers A method of forming (and apparatus for forming) tantalum suicide layers (including tantalum silicon nitride layers), which are typically useful as diffusion barrier layers, on a substrate by using a vapor deposition process with a tantalum halide precursor compound,... | 02/07/2006 |
| 6986914 | Metal nitride deposition by ALD with reduction pulse The present methods provide tools for growing conformal metal thin films, including metal nitride, metal carbide and metal nitride carbide thin films. In particular, methods are provided for growing such films from aggressive chemicals. The amount of corrosive chemi... | 01/17/2006 |
| 6919102 | Method of stabilizing material layer A method of stabilizing the properties of a material layer is disclosed. A plurality of wafers are stored in a FOUP and in sequence the wafers are transferred to a chamber to proceed with deposition of a material layer and to the FOUP filled with a specific gas afte... | 07/19/2005 |
| 6902763 | Method for depositing nanolaminate thin films on sensitive surfaces The present method provides tools for growing conformal metal nitride, metal carbide and metal thin films, and nanolaminate structures incorporating these films, from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is redu... | 06/07/2005 |
| 6884466 | Process for low-temperature metal-organic chemical vapor deposition of tungsten nitride and tungsten nitride films Processes for producing tungsten nitride and tungsten nitride films are provided in which a tungsten carbonyl compound and a nitrogen-containing reactant gas are reacted at a temperature below about 600° C. Tungsten nitride precursors are also included which compri... | 04/26/2005 |
| 6884473 | Method for fabricating metal silicide A method for fabricating a metal silicide layer includes forming a dielectric layer on a substrate, followed by forming a polysilicon material conductive layer on the dielectric layer. An adhesion layer is then formed on the conductive layer, wherein the adhesion la... | 04/26/2005 |
| 6846516 | Multiple precursor cyclical deposition system Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate structure at least partially overlap. One embodiment of depositing a t... | 01/25/2005 |
| 6838125 | Method of film deposition using activated precursor gases A method for depositing a film on a substrate is provided. In one aspect, the method includes providing a metal-containing precursor to an activation zone, and activating the metal-containing precursor to form an activated precursor. The activated precursor gas is t... | 01/04/2005 |
| 6835417 | Method and device for depositing thin layers via ALD/CVD processes in combination with rapid thermal processes The ALD process chamber has heating radiation sources and the process sequence includes rapid temperature changes on a substrate surface of a substrate arranged in the ALD process chamber. The temperature changes are controlled and the ALD and CVD processes are opti... | 12/28/2004 |
| 6833161 | Cyclical deposition of tungsten nitride for metal oxide gate electrode A method for depositing a tungsten nitride layer is provided. The method includes a cyclical process of alternately adsorbing a tungsten-containing compound and a nitrogen-containing compound on a substrate. The barrier layer has a reduced resistivity, lower concent... | 12/21/2004 |
| 6797337 | Method for delivering precursors A method and apparatus for delivering precursors to a chemical vapor deposition or atomic layer deposition chamber is provided. The apparatus includes a temperature-controlled vessel containing a precursor. An energy source is used to vaporize the precursor at its s... | 09/28/2004 |
| 6797340 | Method for depositing refractory metal layers employing sequential deposition techniques A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber and exposing the substrate surface to a boride. A nucleation layer is then deposited on the substra... | 09/28/2004 |
| 6726955 | Method of controlling the crystal structure of polycrystalline silicon A method of forming a polycrystalline silicon film comprising: providing a process gas mix comprising a silicon source gas and a dilution gas mix wherein the dilution gas mix comprises H2 and an inert gas; and forming a polycrystalline silicon film fro... | 04/27/2004 |
| 6660342 | Pulsed electromagnetic energy method for forming a film A method of forming a film by a plasma CVD process in which a high density plasma is generated in the presence of a magnetic field wherein the electric power for generating the plasma has a pulsed waveform. The electric power typically is supplied by micr... | 12/09/2003 |
| 6641867 | Methods for chemical vapor deposition of tungsten on silicon or dielectric In situ nitridation of a thin layer of either silicon or tungsten provides an adhesive layer for bulk deposition of tungsten. Alternatively, a thin layer of silicon can be deposited directly on a dielectric, then reacted with WF6 to replace the silicon wi... | 11/04/2003 |
| 6623798 | Chemical vapor deposition method for depositing silicide and apparatus for performing the same A chemical vapor deposition (CVD) method for depositing a suicide and a CVD system for performing the same are disclosed. A silicide is deposited on a substrate. Residual gases remaining from the depositing step are purged out by flowing air including H | 09/23/2003 |
| 6582757 | Method for tungsten deposition without fluorine-contaminated silicon substrate A method for forming tungsten structures over silicon substrates, including the following steps. A silicon substrate is having a patterned dielectric layer formed thereon defining a tungsten structure opening is provided. The silicon substrate is pre-heat... | 06/24/2003 |
| 6551929 | Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques A method and system to form a refractory metal layer on a substrate features a bifurcated deposition process that includes nucleating a substrate using ALD techniques to serially expose the substrate to first and second reactive gases followed forming a b... | 04/22/2003 |
| 6472323 | Method of depositing tungsten nitride using a source gas comprising silicon A method for depositing tungsten nitride uses a source gas mixture having a silicon based gas for depositing the tungsten nitride to overlie a deposition substrate. A non-planar storage capacitor has a tungsten nitride capacitor electrode.... | 10/29/2002 |
| 6472076 | Deposition of organosilsesquioxane films There is provided an array of alkyl substituted silsesquioxane thin film precursors having a structure wherein alkyl groups are bonded to the silicon atoms of a silsesquioxane cage. The alkyl groups may be the same as, or different than the other alkyl gr... | 10/29/2002 |
| 6306765 | Method for the formation of thin films for use as a semiconductor device A film formation method which comprises the steps of forming a high melting metal film on a substrate to cover an insulating pattern formed on the substrate therewith, and forming on the surface of the high melting metal film a high melting metal nitride ... | 10/23/2001 |
| 6107152 | Method of forming tungsten nitride comprising layers using NF3 as a nitrogen source gas Methods of forming tungsten-comprising layers are described. In one implementation, a substrate is provided having a surface over which a tungsten-comprising layer is to be formed. A gas plasma is generated comprising a reactive species, with the substrat... | 08/22/2000 |
| 6090706 | Preconditioning process for treating deposition chamber prior to deposition of tungsten silicide coating on active substrates therein A process is disclosed for preconditioning surfaces of a tungsten silicide deposition chamber, after a previous step of cleaning the chamber, and prior to depositing tungsten silicide on active substrates in the chamber, which first comprises treating the... | 07/18/2000 |
| 6066366 | Method for depositing uniform tungsten layers by CVD Within wafer and wafer-to-wafer uniformity of W layers deposited by CVD, employing N2 for increased reflectivity, is significantly improved by omitting N2 during at least a portion of deposition. Embodiments include depositing a W nu... | 05/23/2000 |
| 6040011 | Substrate support member with a purge gas channel and pumping system The present invention discloses susceptor used in vacuum CVD chambers which provides a purge gas delivery and removal system that inhibits the deposition of process gas on the edge and back side of a substrate, while providing access to the entire surface... | 03/21/2000 |
| 6022586 | Method and apparatus for forming laminated thin films or layers Pre-coating films are formed in a pretreatment by supplying first film-forming gases into a process chamber of a process vessel while heating the process chamber so as to form a first pre-coating film on the inner surface of the process vessel exposed to ... | 02/08/2000 |
| 5997949 | Synthesis of W-Si-N films by chemical vapor deposition using WF6, SiH4 and NH3 The present invention relates to the forming of amorphous or near-amorphous, ternary films of W-Si-N on substrates by chemical vapor deposition of WF6, SiH4 and NH3 and a carrier gas. The present invention method will allo... | 12/07/1999 |
| 5997950 | Substrate having uniform tungsten silicide film and method of manufacture A tungsten silicide film is deposited on a substrate from a premixed deposition gas mixture comprising: (i) silicon source gas, such as SiCl2 H2 and (ii) tungsten source gas, such as WF6. A seeding gas, such as silane, is ... | 12/07/1999 |
| 5981387 | Method for forming silicide film in semiconductor device Disclosed is a method for forming a silicide film on bit lines or word lines in a semiconductor device. The method includes the steps of: placing a substrate within a reacting chamber, the substrate having an objective layer on which a metal silicide film... | 11/09/1999 |
| 5981366 | Method for manufacturing non-volatile memory A method for forming a non-volatile memory having a floating gate electrode arranged therein. The floating gate electrode being formed by alternatingly laminating on a silicon substrate a polysilicon layer and a tungsten silicide layer with a tunnel oxide... | 11/09/1999 |
| 5916634 | Chemical vapor deposition of W-Si-N and W-B-N A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF6, either silicon or boron, and nitrogen. The result is a W--Si--N or W--B--N thin fil... | 06/29/1999 |
| 5888588 | Process for forming a semiconductor device A semiconductor device (10) includes a gate electrode (61) having a silicon/tungsten nitride/tungsten silicon nitride/tungsten silicide composition. The tungsten nitride film (21) and tungsten suicide film (23) are formed using chemical vapor deposition (... | 03/30/1999 |
| 5834372 | Pretreatment of semiconductor substrate A method for pretreating a semiconductor surface, comprising the steps of: placing a titanium nitride substrate in a reaction chamber and subjecting the reaction chamber to vacuum; purging the reaction chamber with an inert gas selected from the group con... | 11/10/1998 |
