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| Number | Title | Issue Date |
| 8142848 | Coated cutting insert for milling A coated cemented carbide insert is particularly useful for wet or dry milling steels at high cutting speeds, milling of hardened steels, and high feed copy milling of tool steels. The insert is formed by a cemented carbide body including WC, NbC and TaC, a W-alloye... | 03/27/2012 |
| 7927663 | Method of forming a coating with controlled grain size and morphology for enhanced wear resistance and toughness Wear resistance of the prior-art Ti(C,N) layers can be considerably enhanced by optimizing the grain size and microstructure. This invention describes a method to obtain controlled, fine, equiaxed grain morphology in Ti(C,N) layers produced using moderate temperatur... | 04/19/2011 |
| 7914849 | Alumina layer with controlled texture A new and refined method to produce α-Al2O3 layers in a temperature range of from about 750 to about 1000° C. with a controlled growth texture and substantially enhanced wear resistance and toughness than the prior art is disclosed. The α-Al... | 03/29/2011 |
| 7892602 | Cyclical deposition of refractory metal silicon nitride Methods for depositing a metal silicon nitride layer on a substrate during an atomic layer deposition (ALD) process. The methods provide positioning a substrate within a process chamber containing a centralized expanding channel that conically tapers towards and sub... | 02/22/2011 |
| 7431998 | Tool and method for the chemical vapor deposition of a two-phase layer on a substrate member The invention relates to a tool, especially a cutting tool, comprising a substrate member onto which at least one layer is deposited by means of CVD, and a method for the chemical vapor deposition of a two-phase layer on a sintered part. According to the invention, ... | 10/07/2008 |
| 7431542 | Coated cutting insert A cutting insert preferably for milling of extremely highly alloyed grey cast iron, of a substrate and a coating and methods of making and using the insert are disclosed. The cemented carbide substrate includes WC, of from about 3 to about 8 weight-% Co and less tha... | 10/07/2008 |
| 7429151 | Coated inserts for wet milling Coated milling inserts particularly useful for milling of highly alloyed grey cast iron with or without cast skin under wet conditions at preferably rather high cutting speeds and milling of nodular cast iron and compacted graphite iron with or without cast skin und... | 09/30/2008 |
| 7422805 | Cutting tool for bimetal machining Coated cemented carbide cutting tool inserts for bimetal machining under wet conditions at moderate cutting speeds, and in particular, cutting tool inserts for face milling of engine blocks formed from alloys of cast iron and aluminium and/or magnesium. The inserts ... | 09/09/2008 |
| 7393563 | Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layers Chemical vapor deposition methods of forming titanium suicide including layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period of... | 07/01/2008 |
| 7344755 | Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers The present disclosure provides methods and apparatus that may be used to process microfeature workpieces, e.g., semiconductor wafers. Some aspects have particular utility in depositing TiN in a batch process. One implementation involves pretreating a surface of a p... | 03/18/2008 |
| 7311942 | Method for binding halide-based contaminants during formation of a titanium-based film A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition pr... | 12/25/2007 |
| 7267848 | Method of fabricating a protective film by use of vacuum ultraviolet rays In a method of fabricating a protective film, a vacuum ultraviolet radiation CVD (Chemical Vapor Deposition) system is used. The method includes providing a vacuum ultraviolet rays generator, a reactor provided with a platform for supporting a substrate, a heat reta... | 09/11/2007 |
| 7253108 | Process for forming a thin film of TiSiN, in particular for phase change memory devices The process for forming a film of TiSiN includes the following sequence of steps: deposition of a TiN film at medium temperature, for example, 300-450° C., by thermal decomposition of a metallorganic precursor, for example TDMAT (Tetrakis Dimethylamino Titanium); e... | 08/07/2007 |
| 7201943 | Methods of forming atomic layers of a material on a substrate by sequentially introducing precursors of the material A thin film is formed using an atomic layer deposition process, by introducing a first reacting material including tantalum precursors and titanium precursors onto a substrate. A portion of the first reacting material is chemisorbed onto the substrate. Then, a secon... | 04/10/2007 |
| 7137276 | Process for coating glass A process for the production of durable photocatalytically active self-cleaning coating on glass by contacting a hot glass surface with a fluid mixture of titanium chloride, a source of oxygen and a tin precursor. The coating preferably comprises less than 10 atom %... | 11/21/2006 |
| 7119443 | Semiconductor integrated circuit device having a conductive film which contains metal atoms bondable to a halogen element The semiconductor device is formed according to the following steps. A TiN film 71 and a W film 72 are deposited on a silicon oxide film 64 including the inside of a via-hole 66 by the CVD method and thereafter, the W film 72 and T... | 10/10/2006 |
| 7105441 | Preheating of chemical vapor deposition precursors Chemical vapor deposition systems include elements to preheat reactant gases prior to reacting the gases to form layers of a material on a substrate, which provides devices and systems with deposited layers substantially free of residual compounds from the reaction ... | 09/12/2006 |
| 7081271 | Cyclical deposition of refractory metal silicon nitride Embodiments of the invention relate to an apparatus and method of cyclical layer deposition utilizing three or more precursors. In one embodiment, the method includes providing at least one cycle of precursors to form a ternary material layer. Providing at least one... | 07/25/2006 |
| 7067416 | Method of forming a conductive contact Conductive contacts in a semiconductor structure, and methods for forming the conductive components are provided. The method comprises depositing a conductive material over a substrate to fill a contact opening, removing excess material from the substrate leaving th... | 06/27/2006 |
| 7052585 | Coated article including titanium oxycarbide and method of making same A coated article is provided which includes a layer including titanium oxycarbide. In order to form the coated article, a layer of titanium oxide is deposited on a substrate by sputtering or the like. After sputtering of the layer including titanium oxide, an ion be... | 05/30/2006 |
| 7041335 | Titanium tantalum nitride silicide layer Methods and apparatus of forming titanium tantalum silicon nitride (TixTay(Si)Nz) layers are described. The titanium tantalum silicon nitride (TixTay(Si)Nz) layer may be formed using a cyclical deposi... | 05/09/2006 |
| 7033642 | Plasma enhanced chemical vapor deposition method of forming a titanium silicide comprising layer Chemical vapor deposition methods of forming titanium silicide including layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period o... | 04/25/2006 |
| 6949273 | Methods of forming coatings on gas-dispersion fixtures in chemical-vapor-deposition systems Integrated circuits are built layer by layer on a substrate. One technique for forming layers is chemical vapor deposition (CVD.). This technique injects gases through a gas-dispersion fixture into a chamber. The gases react and blanket a substrate in the chamber wi... | 09/27/2005 |
| 6946158 | Deposition of titanium amides The present invention is a process for enhancing the chemical vapor deposition of titanium nitride from a titanium containing precursor selected from the group consisting of tetrakis(dimethylamino)titanium, tetrakis(diethylamino)titanium and mixtures thereof, reacte... | 09/20/2005 |
| 6940172 | Chemical vapor deposition of titanium A titanium layer is formed on a substrate with chemical vapor deposition (CVD). First, a seed layer is formed on the substrate by combining a first precursor with a reducing agent by CVD. Then, the titanium layer is formed on the substrate by combining a second prec... | 09/06/2005 |
| 6933021 | Method of TiSiN deposition using a chemical vapor deposition (CVD) process A method of forming a titanium silicide nitride (TiSiN) layer on a substrate id described. The titanium silicide nitride (TiSiN) layer is formed by providing a substrate to a process chamber and treating the substrate with a silicon-containing gas. A titanium nitrid... | 08/23/2005 |
| 6927162 | Method of forming a contact in a semiconductor device with formation of silicide prior to plasma treatment A method of forming a contact in a semiconductor device deposits a refractory metal contact layer in a contact hole on a conductive region portion in a silicon substrate. The refractory metal contact layer is reacted with the silicide region prior to a plasma treatm... | 08/09/2005 |
| 6911391 | Integration of titanium and titanium nitride layers Embodiments of the present invention generally relate to an apparatus and method of integration of titanium and titanium nitride layers. One embodiment includes providing one or more cycles of a first set of compounds, providing one or more cycles of a second set of... | 06/28/2005 |
| 6903462 | Chemical vapor deposition of titanium A titanium layer is formed on a substrate with chemical vapor deposition (CVD). First, a seed layer is formed on the substrate by combining a first precursor with a reducing agent by CVD. Then, the titanium layer is formed on the substrate by combining a second prec... | 06/07/2005 |
| 6903009 | Methods for fabricating a contact for an integrated circuit According to one embodiment, a method for fabricating a contact is provided. The method can include a step of depositing a Ti layer in order to completely fill a contact hole and on a surrounding surface of an insulation layer. The method can also include a step of ... | 06/07/2005 |
| 6858251 | Lanthanum complex and process for the preparation of a BLT layer using same A lanthanum complex of formula (I) having a low evaporation temperature can be used as a useful precursor for MOCVD of a BLT thin layer on semiconductor devices. wherein A is pentamethyldiethylenetriamine(PMDT) or trie... | 02/22/2005 |
| 6838125 | Method of film deposition using activated precursor gases A method for depositing a film on a substrate is provided. In one aspect, the method includes providing a metal-containing precursor to an activation zone, and activating the metal-containing precursor to form an activated precursor. The activated precursor gas is t... | 01/04/2005 |
| 6824825 | Method for depositing metallic nitride series thin film The present invention generally relates to a method for depositing a metallic nitride series thin film, typically a TiN-series thin film. The TiN-series thin film according to the present invention is formed by a CVD, and contains Ti, O and N to have a higher barrie... | 11/30/2004 |
| 6821572 | Method of cleaning a chemical vapor deposition chamber After a processing chamber is used to deposit a refractory metal film on a substrate, the chamber is plasma-treated with a gas including either nitrogen and/or hydrogen and in-situ cleaned. By plasma-treating the chamber with a gas including nitrogen, the refractory... | 11/23/2004 |
| 6797337 | Method for delivering precursors A method and apparatus for delivering precursors to a chemical vapor deposition or atomic layer deposition chamber is provided. The apparatus includes a temperature-controlled vessel containing a precursor. An energy source is used to vaporize the precursor at its s... | 09/28/2004 |
| 6793969 | Method of forming an oxidation-resistant TiSiN film A CVD process of forming a conductive film containing Ti, Si and N includes a first step of supplying gaseous sources of Ti, Si and N simultaneously to grow a conductive film and a second step of supplying the gaseous sources of Ti, Si and N in a state that a flow r... | 09/21/2004 |
| 6780476 | Method of forming a film using chemical vapor deposition An object of the present invention is to provide a liquid material for chemical vapor deposition (CVD), a method of forming a film by CVD and a CVD apparatus, capable of achieving film formation of a silicate compound of good quality. A liquid material for CVD inclu... | 08/24/2004 |
| 6767582 | Method of modifying source chemicals in an ald process This invention concerns a method for modifying a source material used in an ALD process, a method for depositing transition metal nitride thin films by an ALD process and apparatus for use in such process. According to the present invention transition metal source m... | 07/27/2004 |
| 6756088 | Methods of forming coatings on gas-dispersion fixtures in chemical-vapor-deposition systems Integrated circuits are generally built layer by layer on a substrate. One technique for forming layers is chemical vapor deposition (CVD.) This technique injects gases through a gas-dispersion fixture, such as a showerhead, into a chamber. The gases react and blank... | 06/29/2004 |
| 6730355 | Chemical vapor deposition method of forming a material over at least two substrates A first substrate is provided within a chemical vapor deposition chamber. A reactive gas mixture comprising TiCl4 and a silane is provided within the chamber effective to first chemically vapor deposit a titanium silicide comprising layer on the first sub... | 05/04/2004 |
