Famous Patents
British merchant Peter Durand invented the tin can in 1810.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8021717 | Film formation method, cleaning method and film formation apparatus A treatment gas is supplied to form a Ti-based film on a predetermined number of wafers W while setting a temperature of a susceptor 2 in a chamber 1 to a predetermined temperature. After this, the interior of the chamber 1 containing no wafers ... | 09/20/2011 |
| 7842343 | Method of producing analytical tool The invention relates to a method of producing an analytical tool having recesses (20) formed therein for moving a sample liquid, a base plate (2) made of polymeric material, and a cover laminated to the base plate (2) to cover the recesses (... | 11/30/2010 |
| 7790230 | Metal chloride seeded growth of electronic and optical materials A method of deposition by: depositing a metal halide on a substrate; providing a vapor that forms a material by way of chemical vapor deposition; heating the metal halide to a temperature at or above the melting point of the metal halide and at or below the melting ... | 09/07/2010 |
| 7638170 | Low resistivity metal carbonitride thin film deposition by atomic layer deposition Thermal atomic layer deposition processes are provided for growing low resistivity metal carbonitride thin films. Certain embodiments include methods for forming tantalum carbonitride (TaCN) thin films. In preferred embodiments, TaCN thin films with a resistivity of... | 12/29/2009 |
| 7419701 | Low-temperature, low-resistivity heavily doped p-type polysilicon deposition A method to create a low resistivity P+in-situ doped polysilicon film at low temperature from SiH4 and BCl3 with no anneal required. At conventional dopant concentrations using these source gases, as deposition temperature decreases below about... | 09/02/2008 |
| 7413776 | Method of depositing a metal-containing film A method of depositing a Group IV metal-containing film on a substrate by conveying one or more of certain Group IV organometallic compounds in a gaseous phase to a deposition reactor containing a substrate and decomposing the one or more Group IV organometallic com... | 08/19/2008 |
| 7390535 | Simple chemical vapor deposition system and methods for depositing multiple-metal aluminide coatings A chemical vapor deposition (CVD) system and method for applying an aluminide coating constituted by two or more extrinsic metal components on a jet engine component. The aluminide coating is capable of forming a protective complex oxide upon subsequent heating in a... | 06/24/2008 |
| 7361387 | Plasma enhanced pulsed layer deposition A process system and a deposition method for depositing a highly controlled layered film on a workpiece is disclosed. The basic component of the apparatus is a pulsing plasma source that is capable of either exciting or not-exciting a first precursor. The pulsing pl... | 04/22/2008 |
| 7338588 | Intermetallic compounds A method for the production of an intermetallic compound (M1Z) involves treating a solid precursor material comprising three or more species, including first and second metal or metalloid species (M1, Z) and a non-metal species (X), by electro-... | 03/04/2008 |
| 7311942 | Method for binding halide-based contaminants during formation of a titanium-based film A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition pr... | 12/25/2007 |
| 7279432 | System and method for forming an integrated barrier layer An apparatus and method for forming an integrated barrier layer on a substrate is described. The integrated barrier layer comprises at least a first refractory metal layer and a second refractory metal layer. The integrated barrier layer is formed using a dual-mode ... | 10/09/2007 |
| 7279047 | Reactor for extended duration growth of gallium containing single crystals An apparatus for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If de... | 10/09/2007 |
| 7279732 | Enhanced atomic layer deposition A method of enhanced atomic layer deposition is described. In an embodiment, the enhancement is the use of plasma. Plasma begins prior to flowing a second precursor into the chamber. The second precursor reacts with a prior precursor to deposit a layer on the substr... | 10/09/2007 |
| 7261919 | Silicon carbide and other films and method of deposition A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlle... | 08/28/2007 |
| 7258895 | Methods of forming material on a substrate, and a method of forming a field effect transistor gate oxide on a substrate The invention includes methods of forming material on a substrate and methods of forming a field effect transistor gate oxide. In one implementation, a first species monolayer is chemisorbed onto a substrate within a chamber from a gaseous first precursor. The first... | 08/21/2007 |
| 7223449 | Film deposition method A film deposition method and film deposition system for depositing a halogen compound film, capable of depositing such a film while suppressing abuse that occurs due to deficiency of a halogen element even if the halogen element is dissociated from a film material. ... | 05/29/2007 |
| 7211144 | Pulsed nucleation deposition of tungsten layers A method of forming a tungsten nucleation layer using a sequential deposition process. The tungsten nucleation layer is formed by reacting pulses of a tungsten-containing precursor and a reducing gas in a process chamber to deposit tungsten on the substrate. Thereaf... | 05/01/2007 |
| 7211290 | Surface-modified methyl methacrylate polymer based transparent sheet material A transparent, monolithic or laminated sheet material based on a methyl methacrylate homopolymer or copolymer, the laminated material having at least one of its two outer layers made of the methyl methacrylate homopolymer or copolymer, characterized in that the mono... | 05/01/2007 |
| 7208804 | Crystalline or amorphous medium-K gate oxides, Y0and Gd0 A gate oxide and method of fabricating a gate oxide that produces a more reliable and thinner equivalent oxide thickness than conventional SiO2 gate oxides are provided. Also shown is a gate oxide with a conduction band offset of 2 eV or greater. Gate oxi... | 04/24/2007 |
| 7204886 | Apparatus and method for hybrid chemical processing A method and apparatus for performing multiple deposition processes is provided. In one embodiment, the apparatus includes a chamber body and a gas distribution assembly disposed on the chamber body. In one embodiment, the method comprises positioning a substrate su... | 04/17/2007 |
| 7205620 | Highly reliable amorphous high-k gate dielectric ZrON A gate dielectric and method of fabricating a gate dielectric that produces a more reliable and thinner equivalent oxide thickness than conventional SiO2 gate oxides are provided. Gate dielectrics formed from metals such as zirconium are thermodynamically... | 04/17/2007 |
| 7199023 | Atomic layer deposited HfSiON dielectric films wherein each precursor is independendently pulsed A dielectric film containing atomic layer deposited HfSiON and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. The HfSiON layer thickness is contro... | 04/03/2007 |
| 7192892 | Atomic layer deposited dielectric layers An atomic layer deposited dielectric layer and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Depositing a hafnium metal layer on a substrate sur... | 03/20/2007 |
| 7192626 | Methods for producing silicon nitride films and silicon oxynitride films by thermal chemical vapor deposition Silicon nitride film is formed on substrate by feeding trisilylamine and ammonia into a CVD reaction chamber that contains a substrate. The ammonia gas/trisilylamine gas flow rate ratio is set to a value of at least about 10 and/or the thermal CVD reaction is run at... | 03/20/2007 |
| 7189426 | Needle-shaped x-ray fluorescent material and method for vapor-deposition thereof on a substrate In a method for vapor-depositing a substrate with a layer of a needle-shaped x-ray fluorescent material containing at least one alkali metal, alkali halide phases and an alkali halide are mixed in a vapor phase and are vapor-deposited on the substrate. A needle-shap... | 03/13/2007 |
| 7183186 | Atomic layer deposited ZrTiOfilms After pulsing the second purging gas, a zirconium-containing precursor is pulsed into reaction chamber 220, at block 430. In an embodiment, the zirconium-containing precursor is ZTB. In other embodiments, a zirconium-containing precursor includes but i... | 02/27/2007 |
| 7175878 | Cold antireflection layer deposition process The invention concerns a method for making an antiglare stack by vacuum evaporation on an organic substrate (1) at a temperature lower than 150° C., comprising steps which consist in depositing at least a layer of material having a refractive index different... | 02/13/2007 |
| 7160578 | Method for depositing aluminum oxide coatings on flat glass A chemical vapor deposition process for laying down an aluminum oxide coating on a glass substrate through the use of an organic ester having a β hydrogen on the alkyl group bonded to the carboxylate oxygen and an inorganic aluminum halide. The resulting article ha... | 01/09/2007 |
| 7156923 | Silicon nitride film forming method, silicon nitride film forming system and silicon nitride film forming system precleaning method A thermal processing system (1) includes a reaction vessel (2) capable of forming a silicon nitride film on semiconductor wafers (10) through interaction between hexachlorodisilane and ammonia, and an exhaust pipe (16) connected to the re... | 01/02/2007 |
| 7138187 | Polyvinyl alcohol-based film exhibiting improved adhesion Modifications to the surface of polyvinyl alcohol-based films are disclosed that result in improved adhesion to optical materials. Specifically, the surface chemistry of the polyvinyl alcohol-based film is altered to include fluorine bonds, which surprisingly improv... | 11/21/2006 |
| 7122222 | Precursors for depositing silicon containing films and processes thereof Processes for precursors for silicon dielectric depositions of silicon nitride, silicon oxide and silicon oxynitride on a substrate using a hydrazinosilane of the formula: [R12N—NH]nSi(R2)4−n | 10/17/2006 |
| 7084078 | Atomic layer deposited lanthanide doped TiOx dielectric films A dielectric film containing atomic layer deposited lanthanide doped TiOx and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. The lantha... | 08/01/2006 |
| 7081333 | Radiation image conversion panel and preparation method thereof A radiation image conversion panel exhibiting improved resistance to peeling or shock as well as enhanced sharpness is disclosed, comprising on a support a stimulable phosphor layer composed of columnar phosphor crystals formed through gas phase deposition, wherein ... | 07/25/2006 |
| 7067439 | ALD metal oxide deposition process using direct oxidation Methods of forming metal compounds such as metal oxides or metal nitrides by sequentially introducing and then reacting metal organic compounds with ozone or with oxygen radicals or nitrogen radicals formed in a remote plasma chamber. The metal compounds have surpri... | 06/27/2006 |
| 7066194 | Valve design and configuration for fast delivery system Embodiments of the present invention relate to a method and apparatus for rapid delivery of pulses of one or more reactants to a substrate processing chamber. One embodiment of a valve body includes a first inlet, a second inlet, and an outlet. A valve chamber is in... | 06/27/2006 |
| 7060323 | Method of forming interlayer insulating film A material containing, as a main component, an organic silicon compound represented by the following general formula: R1xSi(OR2)4-x (where R1 is a phenyl group or a vinyl group; R2 | 06/13/2006 |
| 7056806 | Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces The present disclosure provides methods and apparatus useful in depositing materials on batches of microfeature workpieces. One implementation provides a method in which a quantity of a first precursor gas is introduced to an enclosure at a first enclosure pressure.... | 06/06/2006 |
| 7048968 | Methods of depositing materials over substrates, and methods of forming layers over substrates The invention includes methods of utilizing supercritical fluids to introduce precursors into reaction chambers. In some aspects, a supercritical fluid is utilized to introduce at least one precursor into a chamber during ALD, and in particular aspects the supercrit... | 05/23/2006 |
| 7045170 | Anti-stiction coating for microelectromechanical devices A method for depositing an anti-stiction coating on a MEMS device comprises reacting the vapor of an amino-functionalized silane precursor with a silicon surface of the MEMS device in a vacuum chamber. The method can further comprise cleaning the silicon surface of ... | 05/16/2006 |
| 7041335 | Titanium tantalum nitride silicide layer Methods and apparatus of forming titanium tantalum silicon nitride (TixTay(Si)Nz) layers are described. The titanium tantalum silicon nitride (TixTay(Si)Nz) layer may be formed using a cyclical deposi... | 05/09/2006 |
